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1. 发明申请

US20060040508A1 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
标题翻译：使用分层超晶格材料保护半导体加工设备的内部部件的方法
公开(公告)号：US20060040508A1
公开(公告)日：2006-02-23
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
发明人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译：本发明涉及在蚀刻和/或清洁过程中保护诸如等离子体反应器或反应物种发生器的半导体加工设备的内部部件抵抗物理和/或化学损伤的装置和方法。使用具有三种或更多种金属元素的层状超晶格材料，例如钽酸锶钡（SBT），在反应室的内部组分的表面上形成保护屏障。

2. 发明申请

US20050112901A1 Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
标题翻译：从基底去除过渡金属三元和/或四元阻挡材料
公开(公告)号：US20050112901A1
公开(公告)日：2005-05-26
申请号：US10942301
申请日：2004-09-15
申请人： Bing Ji , Martin Plishka , Dingjun Wu , Peter Badowski , Eugene Karwacki
发明人： Bing Ji , Martin Plishka , Dingjun Wu , Peter Badowski , Eugene Karwacki
IPC分类号： C23C16/44 , C23G5/00 , H01L21/302 , H01L21/3213 , H01L21/44 , H01L21/461
CPC分类号： H01L21/32135 , C23C16/4405 , C23G5/00 , H01L21/32136 , Y10S438/905
摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译：本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

3. 发明申请

US20060254613A1 Method and process for reactive gas cleaning of tool parts 审中-公开
标题翻译：工具零件反应气体清洗的方法和工艺
公开(公告)号：US20060254613A1
公开(公告)日：2006-11-16
申请号：US11130307
申请日：2005-05-16
申请人： Dingjun Wu , Eugene Karwacki , Bing Ji
发明人： Dingjun Wu , Eugene Karwacki , Bing Ji
IPC分类号： B08B6/00
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035 , C23C14/564
摘要： This invention relates to an improvement in the cleaning of contaminated tool parts having a coating of unwanted residue formed in a semiconductor deposition chamber. In this process, the contaminated parts to be cleaned are removed from the semiconductor deposition chamber and placed in a reaction chamber off-line from the semiconductor reactor deposition chamber, i.e. on off-line gas reaction chamber. The coating of residue on the contaminated parts is removed in an off-line reactor by contacting the contaminated parts with a reactive gas under conditions for converting the residue to a volatile species while in said off-line reactor and then removing the volatile species from said off-line gas reaction chamber.
摘要翻译：本发明涉及在半导体淀积室中形成的具有不想要的残留物的涂层的污染的工具部件的清洁的改进。在这个过程中，待清洁的被污染的部件被从半导体淀积室中取出并放置在反应室中离开半导体反应堆淀积室，即离线气体反应室。在离线反应器中，通过使污染部分与反应性气体接触的条件下，将污染部分上残留物的涂层除去，同时在所述离线反应器中将残余物转化为挥发性物质，然后从所述离子反应器中除去挥发性物质离线气体反应室。

4. 发明申请

US20060017043A1 Method for enhancing fluorine utilization 审中-公开
标题翻译：提高氟利用率的方法
公开(公告)号：US20060017043A1
公开(公告)日：2006-01-26
申请号：US10897811
申请日：2004-07-23
申请人： Dingjun Wu , Bing Ji , Eugene Karwacki
发明人： Dingjun Wu , Bing Ji , Eugene Karwacki
IPC分类号： C09K3/00 , B08B6/00
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A process for enhancing the fluorine utilization of a process gas that is used in the removal of an undesired substance from a substrate is disclosed herein. In one embodiment, there is provided a process for enhancing the fluorine utilization of a process gas comprising a fluorine source comprising: adding a hydrogen source to the process gas in an amount sufficient to provide a molar ratio ranging from about 0.01 to about 0.99 of hydrogen source to fluorine source.
摘要翻译：本文公开了一种用于提高用于从基材中除去不需要的物质的工艺气体的氟利用的方法。在一个实施方案中，提供了一种用于提高包含氟源的工艺气体的氟利用的方法，包括：向工艺气体中加入足量的氢源以提供约0.01至约0.99的氢来源于氟源。

5. 发明申请

US20050202167A1 Method for removing titanium dioxide deposits from a reactor 失效
标题翻译：从反应器中除去二氧化钛沉积物的方法
公开(公告)号：US20050202167A1
公开(公告)日：2005-09-15
申请号：US10800880
申请日：2004-03-15
申请人： Dingjun Wu , Bing Ji , Philip Henderson , Eugene Karwacki
发明人： Dingjun Wu , Bing Ji , Philip Henderson , Eugene Karwacki
IPC分类号： B05D3/02 , B08B6/00 , C23C16/00
CPC分类号： C23C16/405 , C23C14/083 , C23C14/564 , C23C16/4405
摘要： A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.
摘要翻译：本文公开了用于从用于清洁应用的制品中选择性除去含TiO 2的物质的方法。在一个实施方案中，提供了从制品中除去含TiO 2的物质的方法，包括：提供其上沉积有含TiO 2的物质的制品; 使物质与包含选自含氟清洗剂，含氯清洗剂及其混合物中的至少一种的反应性气体反应以形成挥发性产物; 并从制品中除去挥发性产物，从而从制品中除去物质。

6. 发明申请

US20060016783A1 Process for titanium nitride removal 审中-公开
标题翻译：氮化钛去除工艺
公开(公告)号：US20060016783A1
公开(公告)日：2006-01-26
申请号：US10896588
申请日：2004-07-22
申请人： Dingjun Wu , Bing Ji , Eugene Karwacki
发明人： Dingjun Wu , Bing Ji , Eugene Karwacki
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23G5/00 , C23C16/4405 , H01L21/32135 , H01L21/32136
摘要： A process of removing titanium nitride from a surface of a substrate includes: providing a process gas including at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance; enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location; providing the substrate at a substrate temperature greater than 50° C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate, wherein the contacting occurs at a second location differing from the first location.
摘要翻译：从衬底表面除去氮化钛的方法包括：提供包含至少一种选自含氟物质和含氯物质的反应物的工艺气体; 用所述至少一种反应物的至少一种反应性物质富集工艺气体以形成富集的工艺气体，其中所述富集在第一位置进行; 在大于50℃的衬底温度下提供衬底，其中衬底的表面至少部分地涂覆有氮化钛; 以及使所述基底表面上的所述氮化钛与所述富集的工艺气体接触，以从所述衬底的表面挥发和去除所述氮化钛，其中所述接触发生在与所述第一位置不同的第二位置处。

7. 发明申请

US20050108892A1 Method for cleaning deposition chambers for high dielectric constant materials 失效
标题翻译：清洁高介电常数材料沉积室的方法
公开(公告)号：US20050108892A1
公开(公告)日：2005-05-26
申请号：US10721719
申请日：2003-11-25
申请人： Dingjun Wu , Bing Ji , Stephen Motike , Eugene Karwacki
发明人： Dingjun Wu , Bing Ji , Stephen Motike , Eugene Karwacki
IPC分类号： H01L21/304 , C23C16/44 , H01L21/3065 , H01L21/31 , H01L21/316 , F26B3/00 , B08B3/12
CPC分类号： C23C16/4405
摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.
摘要翻译：本文公开了一种用于干蚀刻和室清洁的高介电常数材料的方法。在本发明的一个方面，提供了一种清洁物质的方法，该方法包括介电常数大于来自反应器表面的至少一部分的二氧化硅的介电常数，包括：引入包含硼的第一气体混合物其中第一气体混合物与其中所含的物质反应以提供挥发性产物和含硼副产物; 将包含含氟反应剂的第二气体混合物引入反应器中，其中第二气体混合物与其中所含的含硼副产物反应形成挥发性产物; 并从反应器中除去挥发性产物。

8. 发明申请

US20050011859A1 Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications 审中-公开
标题翻译：用于选择性生物蚀刻应用的不饱和含氧碳氟化合物
公开(公告)号：US20050011859A1
公开(公告)日：2005-01-20
申请号：US10619911
申请日：2003-07-15
申请人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
发明人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01B13/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to at least partially react with and remove at least a portion of the dielectric material. In another embodiment of the present invention, there is provided a method for making an unsaturated oxygenated fluorocarbon.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地，在一个实施方案中，提供了一种用于在包含不饱和氧化碳氟化合物的层状基材中蚀刻电介质材料的混合物。本发明的混合物可以在包含电介质材料的层状基材上与足以至少部分地反应并除去至少一部分电介质材料的条件下接触。在本发明的另一个实施方案中，提供了制备不饱和氧化碳氟化合物的方法。

9. 发明申请

US20070224829A1 Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas 审中-公开
标题翻译：在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂
公开(公告)号：US20070224829A1
公开(公告)日：2007-09-27
申请号：US11693302
申请日：2007-03-29
申请人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
发明人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的介电材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

10. 发明申请

US20060107831A1 Xenon recovery system 有权
标题翻译：氙气回收系统
公开(公告)号：US20060107831A1
公开(公告)日：2006-05-25
申请号：US10996743
申请日：2004-11-24
申请人： Eugene Karwacki , Timothy Golden , Bing Ji , Stephen Motika , Thomas Farris
发明人： Eugene Karwacki , Timothy Golden , Bing Ji , Stephen Motika , Thomas Farris
IPC分类号： B01D53/02
CPC分类号： B01D53/04 , B01D53/0476 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2253/304 , B01D2256/18 , B01D2257/104 , B01D2257/11 , B01D2257/2066 , B01D2257/504 , B01D2257/80 , B01D2258/0216 , B01D2259/40001 , B01D2259/40013 , B01D2259/40043 , B01D2259/40088 , B01D2259/401 , B01D2259/4533 , C01B23/0052 , C01B2210/0037 , Y02C10/08 , Y02P20/152 , Y02P20/154
摘要： A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/N2 selectivity ratio 50% and an initial xenon concentration ≧0.5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio ≧10. The final xenon concentration is ≧15× the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant ≧50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration >50% and an initial xenon concentration ≧0.5%; heating and purging the adsorption vessel to recover xenon having a final concentration ≧15× its initial concentration. Apparatus for performing the process are also described.
摘要翻译：从进料气中回收氙的方法的第一方面包括：提供含有Xe / N 2选择比<75的吸附剂的吸附容器; 进入初始氮浓度> 50％，初始氙浓度> = 0.5％的吸附容器进料气体; 抽吸吸附容器; 并以吹扫 - 进料比> = 10吹扫吸附容器。最终的氙浓度> 15倍是初始氙浓度。该方法的第二方面包括提供含有Xe亨利定律常数> 50mmole / g / atm的吸附剂的吸附容器; 进入初始氮浓度> 50％，初始氙浓度> = 0.5％的吸附容器进料气体; 加热和吹扫吸附容器以回收最终浓度> 15倍于其初始浓度的氙气。还描述了用于执行该过程的装置。

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