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1. 发明授权

US07371688B2 Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
标题翻译：从基底去除过渡金属三元和/或四元阻挡材料
公开(公告)号：US07371688B2
公开(公告)日：2008-05-13
申请号：US10942301
申请日：2004-09-15
申请人： Bing Ji , Martin Jay Plishka , Dingjun Wu , Peter Richard Badowski , Eugene Joseph Karwacki, Jr.
发明人： Bing Ji , Martin Jay Plishka , Dingjun Wu , Peter Richard Badowski , Eugene Joseph Karwacki, Jr.
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32135 , C23C16/4405 , C23G5/00 , H01L21/32136 , Y10S438/905
摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译：本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

2. 发明授权

US07119032B2 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
公开(公告)号：US07119032B2
公开(公告)日：2006-10-10
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki, Jr. , David Allen Roberts
发明人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki, Jr. , David Allen Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

3. 发明授权

US07357138B2 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 失效
标题翻译：蚀刻高介电常数材料和清洁高介电常数材料沉积室的方法
公开(公告)号：US07357138B2
公开(公告)日：2008-04-15
申请号：US10723714
申请日：2003-11-26
申请人： Bing Ji , Stephen Andrew Motika , Ronald Martin Pearlstein , Eugene Joseph Karwacki, Jr. , Dingjun Wu
发明人： Bing Ji , Stephen Andrew Motika , Ronald Martin Pearlstein , Eugene Joseph Karwacki, Jr. , Dingjun Wu
IPC分类号： B08B9/00 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译：本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去来自底物的物质。

4. 发明授权

US07267842B2 Method for removing titanium dioxide deposits from a reactor 失效
标题翻译：从反应器中除去二氧化钛沉积物的方法
公开(公告)号：US07267842B2
公开(公告)日：2007-09-11
申请号：US10800880
申请日：2004-03-15
申请人： Dingjun Wu , Bing Ji , Philip Bruce Henderson , Eugene Joseph Karwacki, Jr.
发明人： Dingjun Wu , Bing Ji , Philip Bruce Henderson , Eugene Joseph Karwacki, Jr.
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/405 , C23C14/083 , C23C14/564 , C23C16/4405
摘要： A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.
摘要翻译：本文公开了用于从用于清洁应用的制品中选择性除去含TiO 2的物质的方法。在一个实施方案中，提供了从制品中除去含TiO 2的物质的方法，包括：提供其上沉积有含TiO 2的物质的制品; 使物质与包含选自含氟清洗剂，含氯清洗剂及其混合物中的至少一种的反应性气体反应以形成挥发性产物; 并从制品中除去挥发性产物，从而从制品中除去物质。

5. 发明授权

US07055263B2 Method for cleaning deposition chambers for high dielectric constant materials 失效
标题翻译：清洁高介电常数材料沉积室的方法
公开(公告)号：US07055263B2
公开(公告)日：2006-06-06
申请号：US10721719
申请日：2003-11-25
申请人： Dingjun Wu , Bing Ji , Stephen Andrew Motika , Eugene Joseph Karwacki, Jr.
发明人： Dingjun Wu , Bing Ji , Stephen Andrew Motika , Eugene Joseph Karwacki, Jr.
IPC分类号： F26B3/34
CPC分类号： C23C16/4405
摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.
摘要翻译：本文公开了一种用于干蚀刻和室清洁的高介电常数材料的方法。在本发明的一个方面，提供了一种清洁物质的方法，该方法包括介电常数大于来自反应器表面的至少一部分的二氧化硅的介电常数，包括：引入包含硼的第一气体混合物其中第一气体混合物与其中所含的物质反应以提供挥发性产物和含硼副产物; 将包含含氟反应剂的第二气体混合物引入反应器中，其中第二气体混合物与其中所含的含硼副产物反应形成挥发性产物; 并从反应器中除去挥发性产物。

6. 发明授权

US07285154B2 Xenon recovery system 有权
标题翻译：氙气回收系统
公开(公告)号：US07285154B2
公开(公告)日：2007-10-23
申请号：US10996743
申请日：2004-11-24
申请人： Eugene Joseph Karwacki, Jr. , Timothy Christopher Golden , Bing Ji , Stephen Andrew Motika , Thomas Stephen Farris
发明人： Eugene Joseph Karwacki, Jr. , Timothy Christopher Golden , Bing Ji , Stephen Andrew Motika , Thomas Stephen Farris
IPC分类号： B01D53/02
CPC分类号： B01D53/04 , B01D53/0476 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2253/304 , B01D2256/18 , B01D2257/104 , B01D2257/11 , B01D2257/2066 , B01D2257/504 , B01D2257/80 , B01D2258/0216 , B01D2259/40001 , B01D2259/40013 , B01D2259/40043 , B01D2259/40088 , B01D2259/401 , B01D2259/4533 , C01B23/0052 , C01B2210/0037 , Y02C10/08 , Y02P20/152 , Y02P20/154
摘要： A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/N2 selectivity ratio 50% and an initial xenon concentration ≧0.5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio ≧10. The final xenon concentration is ≧15× the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant ≧50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration >50% and an initial xenon concentration ≧0.5%; heating and purging the adsorption vessel to recover xenon having a final concentration ≧15× its initial concentration. Apparatus for performing the process are also described.
摘要翻译：从进料气中回收氙的方法的第一方面包括：提供含有Xe / N 2选择比<75的吸附剂的吸附容器; 进入初始氮浓度> 50％，初始氙浓度> = 0.5％的吸附容器进料气体; 抽吸吸附容器; 并以吹扫 - 进料比> = 10吹扫吸附容器。最终的氙浓度> 15倍是初始氙浓度。该方法的第二方面包括提供含有Xe亨利定律常数> 50mmole / g / atm的吸附剂的吸附容器; 进入初始氮浓度> 50％，初始氙浓度> = 0.5％的吸附容器进料气体; 加热和吹扫吸附容器以回收最终浓度> 15倍于其初始浓度的氙气。还描述了用于执行该过程的装置。

7. 发明授权

US07581549B2 Method for removing carbon-containing residues from a substrate 失效
标题翻译：从底物中除去含碳残留物的方法
公开(公告)号：US07581549B2
公开(公告)日：2009-09-01
申请号：US11178545
申请日：2005-07-12
申请人： Andrew David Johnson , Hoshang Subawalla , Bing Ji , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr. , Robert Gordon Ridgeway , Peter James Maroulis , Mark Leonard O'Neill , Aaron Scott Lukas , Stephen Andrew Motika
发明人： Andrew David Johnson , Hoshang Subawalla , Bing Ji , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr. , Robert Gordon Ridgeway , Peter James Maroulis , Mark Leonard O'Neill , Aaron Scott Lukas , Stephen Andrew Motika
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： C23C16/4405
摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.
摘要翻译：本文描述了用于从基底去除含碳残留物的方法。一方面，提供了从基材表面的至少一部分去除含碳残余物的方法，其包括：提供包含氧源，氟源和任选添加气体的工艺气体，其中摩尔比在工艺气体中所含的氧与氟的含量范围为约1至约10; 使用至少一个能量源来激活所述工艺气体以提供反应性物质; 并使基材的表面与反应性物质接触，从表面挥发并除去含碳残渣。

8. 发明授权

US06686594B2 On-line UV-Visible light halogen gas analyzer for semiconductor processing effluent monitoring 有权
标题翻译：在线紫外可见光卤素气体分析仪，用于半导体处理污水监测
公开(公告)号：US06686594B2
公开(公告)日：2004-02-03
申请号：US10003223
申请日：2001-10-29
申请人： Bing Ji , Robert Gordon Ridgeway , Eugene Joseph Karwacki, Jr. , Howard Paul Withers, Jr. , Steven Arthur Rogers , Peter James Maroulis , John Giles Langan
发明人： Bing Ji , Robert Gordon Ridgeway , Eugene Joseph Karwacki, Jr. , Howard Paul Withers, Jr. , Steven Arthur Rogers , Peter James Maroulis , John Giles Langan
IPC分类号： G01J312
CPC分类号： G01N21/31 , G01N21/33
摘要： An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.
摘要翻译：一种在线卤素分析仪系统及其半导体处理流出物监测方法。该系统包括将流出物流取样成吸收池，并将紫外可见光通过电池中的流出物样品。通过样品后，光被光电检测器收集，用于实时波长选择吸收分析。该系统同时测定半导体处理流出物流中多种卤素气体（如F2，Cl2，Br2和I2）的浓度。本发明可用于化学气相沉积（CVD）室清洁终点确定，并提高远程等离子体下游CVD室清洁过程中的氟利用效率。

9. 发明申请

US20060040508A1 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
标题翻译：使用分层超晶格材料保护半导体加工设备的内部部件的方法
公开(公告)号：US20060040508A1
公开(公告)日：2006-02-23
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
发明人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译：本发明涉及在蚀刻和/或清洁过程中保护诸如等离子体反应器或反应物种发生器的半导体加工设备的内部部件抵抗物理和/或化学损伤的装置和方法。使用具有三种或更多种金属元素的层状超晶格材料，例如钽酸锶钡（SBT），在反应室的内部组分的表面上形成保护屏障。

10. 发明申请

US20080047579A1 Detecting the endpoint of a cleaning process 审中-公开
标题翻译：检测清洁过程的终点
公开(公告)号：US20080047579A1
公开(公告)日：2008-02-28
申请号：US11510190
申请日：2006-08-25
申请人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki
发明人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki
IPC分类号： B08B6/00 , B08B7/04
CPC分类号： B08B7/0035 , H01J37/32935 , H01J37/32963
摘要： A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.
摘要翻译：一种确定清洁方法的终点的方法，其中金属残留物从下面的表面除去，该金属残留物通过使残留物与残留物挥发并且易于侵蚀下面的表面的金属并使其挥发的清洁剂接触，如果清洁过程没有及时终止，并且其中包含下面的表面的金属与金属残余物的金属比清洁剂更有反应性，其改进包括在第挥发性金属的量与清洁剂的量从较低值增加到较高值。

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