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1. 发明申请

US20060192187A1 DEVICE FOR OPENING, BY MEANS OF FORCE, DOORS, WINDOWS AND OTHER TYPES OF OPENINGS, WITH A REMOTE CONTROL 失效
标题翻译：通过远程控制，通过强制，门，窗口和其他类型的开放来打开设备
公开(公告)号：US20060192187A1
公开(公告)日：2006-08-31
申请号：US10543778
申请日：2004-01-29
申请人： Bernard Jacquinot , Jean-Michel Gerard
发明人： Bernard Jacquinot , Jean-Michel Gerard
IPC分类号： A62B3/00
CPC分类号： A62B3/005
摘要： The invention relates to a device for opening, by means of force, an operating sash (100) which has a length (L) and which comprises an opening part (102) and a fixed frame (104), such as a door or window, comprising at least one frame (2) whose length can be extended and which is formed by one or several sliding parts (10,20) which can be adapted to the length (L) of the operating sash; a corner (12,22) which can be depressed and which is arranged in between the frame (104) and the opening part (102), a spreader ram (50) enabling the penetration of said corner (12,22) between the frame (104) and the opening part (102) in order to open the operating sash (100) by means of force; and a push ram (30) placed in a substantially perpendicular position with respect to the frame (2). The rams (30;50) can be maneuvered at a distance with the aid of a remote control (80). The invention is characterized in that the push ram (30) is a continually thrusting percussion ram acting in a repetitive reciprocating manner.
摘要翻译：本发明涉及一种用于通过力打开具有长度（L）并且包括开口部分（102）和诸如门或窗口的固定框架（104）的操作框架（100）的装置，，其包括至少一个其长度可以延伸的框架（2），所述框架（2）由可以适应所述操作窗扇的长度（L）的一个或多个滑动部件（10,20）形成; 可以被压下并且布置在框架（104）和开口部分（102）之间的角部（12,22），使得能够将框架（12,22）穿过框架（104）和开口部分（102），以便通过力打开操作窗框（100）; 以及相对于所述框架（2）放置在基本上垂直的位置的推动压头（30）。在远程控制（80）的帮助下，公羊可以远程操纵（30; 50）。本发明的特征在于，推动压头（30）是以重复的往复方式运动的连续推压冲击式压头。

2. 发明授权

US07334775B2 Device for opening, by means of force, doors, windows and other types of openings, with a remote control 失效
标题翻译：用于通过力量打开门，窗和其他类型的开口的装置，具有遥控器
公开(公告)号：US07334775B2
公开(公告)日：2008-02-26
申请号：US10543778
申请日：2004-01-29
申请人： Bernard Jacquinot , Jean-Michel Gerard
发明人： Bernard Jacquinot , Jean-Michel Gerard
IPC分类号： A62B3/00 , B66F3/24
CPC分类号： A62B3/005
摘要： The invention relates to a device for opening, by way of force, an operating sash (100) which has a length (L) and which comprises an opening part (102) and a fixed frame (104), such as a door or window, comprising at least one frame (2) whose length can be extended and which is formed by one or several sliding parts (10,20) which can be adapted to the length (L) of the operating sash; a corner (12,22) which can be depressed and which is arranged in between the frame (104) and the opening part (102), a spreader ram (50) enabling the penetration of said corner (12,22) between the frame (104) and the opening part (102) in order to open the operating sash (100) by way of force; and a push ram (30) placed in a substantially perpendicular position with respect to the frame (2). The rams (30;50) can be maneuvered at a distance with the aid of a remote control (80). The invention is characterized in that the push ram (30) is a continually thrusting percussion ram acting in a repetitive reciprocating manner.
摘要翻译：本发明涉及一种用于通过力打开具有长度（L）并且包括开口部分（102）和诸如门或窗口的固定框架（104）的操作窗框（100）的装置，，其包括至少一个其长度可以延伸的框架（2），所述框架（2）由可以适应于所述操作窗扇的长度（L）的一个或多个滑动部件（10,20）形成; 可以被压下并且布置在框架（104）和开口部分（102）之间的角部（12,22），使得能够将框架（12,22）穿过框架（104）和开口部分（102），以便通过力打开操作窗扇（100）; 以及相对于所述框架（2）放置在基本上垂直的位置的推动压头（30）。在远程控制（80）的帮助下，公羊可以远程操纵（30; 50）。本发明的特征在于，推动压头（30）是以重复的往复方式运动的连续推压冲击式压头。

3. 发明授权

US5521398A Quantum well heterostructure optical operator 失效
标题翻译：量子阱异质结构光学算子
公开(公告)号：US5521398A
公开(公告)日：1996-05-28
申请号：US351774
申请日：1994-12-08
申请人： Nikolaos Pelekanos , Benoit Deveaud-Pledran , Philippe Gravey , Jean-Michel Gerard
发明人： Nikolaos Pelekanos , Benoit Deveaud-Pledran , Philippe Gravey , Jean-Michel Gerard
IPC分类号： G02F1/017 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2202/13
摘要： An optical operator designed to be subjected to write radiation for processing read radiation that it receives, the operator comprising an electro-optical material (Q2), first and second materials (Q1, Q3) distributed on either side of the electro-optical material (Q2), said first and second materials (Q1, Q3) being collection quantum wells. Quantum barrier forming materials (6, 8) are interposed between said two materials (Q1, Q3) and the electro-optical material (Q2), with one of the quantum barrier forming materials (6) constituting a filter such that charges of a certain sign photoexcited by the write radiation in a material (4, Q1) on one side of said filter pass through it in the absence of an external electric field to relax in the collection quantum well (Q3) situated on the other side of the filter (6), while charges of opposite sign are blocked by the filter (6) in the other collection well (Q1).
摘要翻译：设计为经受写入辐射处理其所接收的读取辐射的光学操作器，操作者包括电光材料（Q2），分布在电光材料的两侧的第一和第二材料（Q1，Q3） Q2），所述第一和第二材料（Q1，Q3）是收集量子阱。量子势垒形成材料（6,8）插入在所述两种材料（Q1，Q3）和电光材料（Q2）之间，其中一个量子势垒形成材料（6）构成过滤器，使得一定量的电荷通过在不存在外部电场的情况下在所述滤波器一侧的材料（4，Q1）中的写入辐射进行签名的光标号在位于滤光器另一侧的收集量子阱（Q3）中松弛， 6），而相反符号的电荷被另一个收集井（Q1）中的过滤器（6）阻挡。

4. 发明授权

US5075742A Semiconductor structure for optoelectronic components with inclusions 失效
标题翻译：包含光电元件的半导体结构
公开(公告)号：US5075742A
公开(公告)日：1991-12-24
申请号：US639530
申请日：1991-01-10
申请人： Jean-Michel Gerard , Claude Weisbuch
发明人： Jean-Michel Gerard , Claude Weisbuch
IPC分类号： H01S5/00 , H01L33/06 , H01L33/30 , H01S5/02 , H01S5/042 , H01S5/10 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/10 , H01S5/32 , H01L33/30 , H01S5/021 , H01S5/3403 , H01S5/3432
摘要： The object of the invention is to reduce the influence of dislocations on the functioning of structures for optoelectronic component, such as laser, made from semiconductor materials. Accordingly, one of the lasers of such a structure comprises three-dimensional inclusions in a semiconductor material with a thinner forbidden band than the forbidden band of the layer material. The inclusions are e.g. distributed over several planes of the active layer of a laser, and may be in InAs introduced into a layer in GaAs.
摘要翻译：本发明的目的是减少位错对由半导体材料制成的光电子部件如激光器的结构的功能的影响。因此，这种结构的激光器之一包括在具有比层材料的禁带更薄的禁带的半导体材料中的三维夹杂物。夹杂物是例如分布在激光器的有源层的几个平面上，并且可以在GaAs中引入InAs中。

5. 发明授权

US06868103B2 Single photon source based on transmitters with selectively distributed frequencies 失效
标题翻译：基于具有选择性分布频率的发射机的单光子源
公开(公告)号：US06868103B2
公开(公告)日：2005-03-15
申请号：US10297101
申请日：2001-05-28
申请人： Jean-Michel Gerard , Bruno Gayral , Dang Le Si
发明人： Jean-Michel Gerard , Bruno Gayral , Dang Le Si
IPC分类号： H01S5/183 , H01L29/06 , H01L33/00 , H01S3/098 , H01S3/13 , H01S5/10 , H01S5/323 , H01S5/34 , H01S5/343 , H04N7/167
CPC分类号： H01S5/323 , B82Y20/00 , H01S5/1042 , H01S5/1835 , H01S5/3412 , H01S5/3432
摘要： Apparatus for single photon source based on emitters with frequencies distributed in a chosen manner. In one embodiment, the apparatus comprises an opto-electronic component capable or emitting light pulses containing a single photon comprising a resonant optical cavity and a group of photon emitters placed in this optical cavity, a single one of these emitters having an emission frequency equal to approximately the resonant frequency of the cavity characterised in that all emitters have a spectral distribution with a concentration of emitter frequencies at a given frequency, and in that the cavity is made so that its resonant frequency is different from this concentration frequency so that the number of emitters with an emission frequency corresponding to the resonant frequency of the cavity is close to one.
摘要翻译：基于发射器的单光子源的装置，其频率以选定的方式分布。在一个实施例中，该装置包括能够或发射包含单个光子的光脉冲的光电子部件，该单个光子包括放置在该光学腔中的共振光学腔和一组光子发射体，这些发射体中的单个发光体的发射频率等于近似谐振腔的谐振频率，其特征在于，所有发射体具有在给定频率下具有发射体频率浓度的频谱分布，并且所述腔被制成使得其谐振频率与该浓度频率不同，具有对应于腔的共振频率的发射频率的发射体接近于1。

6. 发明授权

US5559613A Photorefractive device with quantum wells 失效
$Photorefractive device with quantum wells$
标题翻译：具有量子阱的光折射装置
公开(公告)号：US5559613A
公开(公告)日：1996-09-24
申请号：US286703
申请日：1994-08-05
申请人： Benoit Deveaud-Pledran , Christian Guillemot , Jean-Michel Gerard
发明人： Benoit Deveaud-Pledran , Christian Guillemot , Jean-Michel Gerard
IPC分类号： G02F1/017 , G02B5/18 , G02B5/32
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2202/13
摘要： A photorefractive device intended to be exposed to a marking radiation which is provided so as to create a grating of interference fringes in the device and to a reading radiation diffracted by the created grating. The device includes an electro-optical material having a quantum well structure (24) and formed in an intrinsic semi-conductor matrix (22, 24) and, on both sides of the material in the semi-conductor matrix, suitable means (28, 30) to trap, both parallel to the axis of the structure and perpendicular to this axis, free carriers generated by the marking radiation.
摘要翻译：旨在暴露于标记辐射的光折射装置，其被设置成在装置中产生干涉条纹的光栅以及由所产生的光栅衍射的读取辐射。该装置包括具有量子阱结构（24）并形成在本征半导体矩阵（22,24）中的电光材料，并且在半导体矩阵中的材料的两侧上，合适的装置（28， 30）捕获，平行于结构的轴线并垂直于该轴线，由标记辐射产生的自由载流子。

7. 发明授权

US5343057A Thin film, field effect transistor with a controlled energy band 失效
标题翻译：具有受控能带的薄膜，场效应晶体管
公开(公告)号：US5343057A
公开(公告)日：1994-08-30
申请号：US907826
申请日：1992-07-02
申请人： Jean-Michel Gerard , Jacques Favre
发明人： Jean-Michel Gerard , Jacques Favre
IPC分类号： H01L29/80 , H01L21/338 , H01L29/205 , H01L29/225 , H01L29/43 , H01L29/778 , H01L29/812 , H01L29/38
CPC分类号： H01L29/7783 , H01L29/205 , H01L29/225 , H01L29/432
摘要： This transistor incorporates at least one first stack of semi-conductor conduction layers and at least one second stack of semiconductor layers with a single, highly doped thin film within the second stack giving it the character of a mobile electric charge donor, superimposed and supported by a substrate as well as at least two potential barriers located in the second stack on either side of the doped thin film in order to reduce the concentration of carriers in said second stack a metal gate resting on the second stack for modifying the concentration of carriers of the charges in the first stack, two ohmic contacts being placed on one of the stacks, on either side of the gate and serving as the source and drain.
摘要翻译：该晶体管包括至少一个半导体导电层的第一叠层和至少一个第二堆叠的半导体层，其具有在第二堆叠内的单个高掺杂的薄膜，从而赋予移动电荷给予体的特征，并叠加并由衬底以及位于掺杂薄膜任一侧上的第二堆叠中的至少两个势垒，以便减少所述第二堆叠中的载流子的浓度，金属栅极位于第二堆叠上，用于改变载体的载流子浓度第一堆叠中的电荷，两个欧姆接触放置在一个堆叠上，位于栅极的任一侧上并用作源极和漏极。

8. 发明授权

US5296699A Quantum well photoelectric detector with improved detectivity 失效
标题翻译：量子阱光电探测器具有改进的检测能力
公开(公告)号：US5296699A
公开(公告)日：1994-03-22
申请号：US18116
申请日：1993-02-17
申请人： Benoit Deveaud-Pledran , Jean-Michel Gerard
发明人： Benoit Deveaud-Pledran , Jean-Michel Gerard
IPC分类号： H01L31/10 , H01L31/0352 , H01J40/14
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/035254
摘要： Photoelectric detector presenting a multiple quantum well structure, each quantum well comprising a first barrier made from a first semiconductor material, a well made from a second semiconductor material, and a second barrier made from a third semiconductor material, each semiconductor material being defined by its chemical composition, and the electric conductibility in the detector being ensured by propagation, from the first barrier to the second barrier, of given charge carriers in a given electronic band, presenting an energy extremum in each of the said materials. In accordance with the invention, said semiconductor materials are at least partly doped with carriers, the chemical composition of the first and third semiconductor materials being such that the difference in energy, between the energy extremum of the said electronic band in the first semiconductor material and the energy extremum of the said electronic band in the third semiconductor material, is greater in absolute value than the maximum energy of the optical longitudinal phonons in the second semiconductor material making up the well. Application: infrared detectors, especially in the range 2.times.10.sup.13 -4.times.10.sup.13 Hz.
摘要翻译：具有多量子阱结构的光电检测器，每个量子阱包括由第一半导体材料制成的第一屏障，由第二半导体材料制成的阱以及由第三半导体材料制成的第二阻挡层，每个半导体材料由其定义化学成分和检测器中的电导率通过在给定电子带中的给定电荷载体从第一屏障传递到第二屏障来确保，在每个所述材料中呈现能量极值。根据本发明，所述半导体材料至少部分地掺有载流子，第一和第三半导体材料的化学成分使得第一半导体材料中的所述电子带的能量极值和第三半导体材料中的所述电子带的能量极值的绝对值大于构成该阱的第二半导体材料中的光学纵向声子的最大能量。应用：红外探测器，特别在2 * 1013-4 * 1013 Hz的范围内。

9. 发明授权

US5160992A Device for the conversion of an infrared radiation into another radiation of energy greater than that of this infrared radiation 失效
标题翻译：将红外辐射转换成能量大于本红外辐射能量辐射的装置
公开(公告)号：US5160992A
公开(公告)日：1992-11-03
申请号：US619704
申请日：1990-10-31
申请人： Jean-Michel Gerard , Jean-Yves Marzin
发明人： Jean-Michel Gerard , Jean-Yves Marzin
IPC分类号： G02F1/017 , G02F2/02 , H01L31/0352 , H01L33/00
CPC分类号： H01L31/0352 , B82Y20/00 , G02F2/02 , G02F1/017
摘要： A device for the conversion of infrared radiation into another form of radiation of energy greater than that of the infrared radiation comprises a multilayer semiconductor structure (4) comprising at least two layers in which an electron gas and a gas of holes which are regenerated in the course of the use of the device are combined. There is at least one delocalized electron state in the structure, at an energy greater than the energy of the ground state of the electron gas, the difference between these energies being within the infrared range. When the structure is illuminated at a non-normal incidence by radiation (10), the energy of which is equal to this difference, the structure emits a radiation (14) of greater energy, by radiative recombination involving the holes. The device finds suitable application in infrared imaging systems.
摘要翻译：用于将红外辐射转换成大于红外辐射的能量辐射的另一形式的辐射的装置包括：多层半导体结构（4），其包括至少两个层，其中电子气体和空穴的气体在组合使用设备的过程。在结构中存在至少一个离域电子状态，其能量大于电子气体的基态的能量，这些能量之间的差异在红外范围内。当通过辐射（10）的非正常入射照射结构时，其能量等于该差异，结构通过涉及孔的辐射复合发射更大能量的辐射（14）。该设备在红外成像系统中发现适用的应用。

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