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2. 发明授权

US5349596A Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity 失效
标题翻译：不对称半导体异质结激光腔和激光器配有所述腔
公开(公告)号：US5349596A
公开(公告)日：1994-09-20
申请号：US46744
申请日：1993-04-16
申请人： Engin Molva , Roger Accomo , Guy Feuillet , Joel Cibert , Dang Le Si , Claire Bodin-Deshayes
发明人： Engin Molva , Roger Accomo , Guy Feuillet , Joel Cibert , Dang Le Si , Claire Bodin-Deshayes
IPC分类号： H01S5/00 , H01S3/0959 , H01S5/02 , H01S5/024 , H01S5/04 , H01S5/042 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/347 , H01S3/18 , H01L21/203
CPC分类号： B82Y20/00 , H01S5/02 , H01S5/04 , H01S5/34 , H01S3/0959 , H01S5/02272 , H01S5/024 , H01S5/02461 , H01S5/041 , H01S5/3213 , H01S5/3409 , H01S5/3426 , H01S5/343 , H01S5/3432 , H01S5/347
摘要： A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.
摘要翻译：公开了一种半导体异质结构激光腔，其具有在衬底上限定四个区的外延半导体层。激光腔包括第一区，其具有从第一面到第二面连续变化的组合，其间隙从第一面向第二面逐渐减小，第一区确保光学限制和光引导。第二区域构成与第一区域的第二面接触的有源发射区，并且具有至少一个具有小于第一区的间隙的量子阱。第三区域的间隙大于至少一个量子阱的间隙。第三区域确保光学限制和光引导，并且具有从第一面到第二面连续变化的组合，其间隙从第一面增加到第二面，第三区的第一面处于与活性排放区接触。第四区域构成接触第三区域的第二面的缓冲区和基板，第四区域用作光导光学屏障，第一和第三区域相对于有源发射区域是不对称的，以限定不对称的 GRINSCH结构，构成用于确保电子激发和形成电子空穴的半导体异质结构的表面的第一和第三区域之一。

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