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1. 发明授权

US5521398A Quantum well heterostructure optical operator 失效
标题翻译：量子阱异质结构光学算子
公开(公告)号：US5521398A
公开(公告)日：1996-05-28
申请号：US351774
申请日：1994-12-08
申请人： Nikolaos Pelekanos , Benoit Deveaud-Pledran , Philippe Gravey , Jean-Michel Gerard
发明人： Nikolaos Pelekanos , Benoit Deveaud-Pledran , Philippe Gravey , Jean-Michel Gerard
IPC分类号： G02F1/017 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2202/13
摘要： An optical operator designed to be subjected to write radiation for processing read radiation that it receives, the operator comprising an electro-optical material (Q2), first and second materials (Q1, Q3) distributed on either side of the electro-optical material (Q2), said first and second materials (Q1, Q3) being collection quantum wells. Quantum barrier forming materials (6, 8) are interposed between said two materials (Q1, Q3) and the electro-optical material (Q2), with one of the quantum barrier forming materials (6) constituting a filter such that charges of a certain sign photoexcited by the write radiation in a material (4, Q1) on one side of said filter pass through it in the absence of an external electric field to relax in the collection quantum well (Q3) situated on the other side of the filter (6), while charges of opposite sign are blocked by the filter (6) in the other collection well (Q1).
摘要翻译：设计为经受写入辐射处理其所接收的读取辐射的光学操作器，操作者包括电光材料（Q2），分布在电光材料的两侧的第一和第二材料（Q1，Q3） Q2），所述第一和第二材料（Q1，Q3）是收集量子阱。量子势垒形成材料（6,8）插入在所述两种材料（Q1，Q3）和电光材料（Q2）之间，其中一个量子势垒形成材料（6）构成过滤器，使得一定量的电荷通过在不存在外部电场的情况下在所述滤波器一侧的材料（4，Q1）中的写入辐射进行签名的光标号在位于滤光器另一侧的收集量子阱（Q3）中松弛， 6），而相反符号的电荷被另一个收集井（Q1）中的过滤器（6）阻挡。

2. 发明授权

US5559613A Photorefractive device with quantum wells 失效
$Photorefractive device with quantum wells$
标题翻译：具有量子阱的光折射装置
公开(公告)号：US5559613A
公开(公告)日：1996-09-24
申请号：US286703
申请日：1994-08-05
申请人： Benoit Deveaud-Pledran , Christian Guillemot , Jean-Michel Gerard
发明人： Benoit Deveaud-Pledran , Christian Guillemot , Jean-Michel Gerard
IPC分类号： G02F1/017 , G02B5/18 , G02B5/32
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2202/13
摘要： A photorefractive device intended to be exposed to a marking radiation which is provided so as to create a grating of interference fringes in the device and to a reading radiation diffracted by the created grating. The device includes an electro-optical material having a quantum well structure (24) and formed in an intrinsic semi-conductor matrix (22, 24) and, on both sides of the material in the semi-conductor matrix, suitable means (28, 30) to trap, both parallel to the axis of the structure and perpendicular to this axis, free carriers generated by the marking radiation.
摘要翻译：旨在暴露于标记辐射的光折射装置，其被设置成在装置中产生干涉条纹的光栅以及由所产生的光栅衍射的读取辐射。该装置包括具有量子阱结构（24）并形成在本征半导体矩阵（22,24）中的电光材料，并且在半导体矩阵中的材料的两侧上，合适的装置（28， 30）捕获，平行于结构的轴线并垂直于该轴线，由标记辐射产生的自由载流子。

3. 发明授权

US5296699A Quantum well photoelectric detector with improved detectivity 失效
标题翻译：量子阱光电探测器具有改进的检测能力
公开(公告)号：US5296699A
公开(公告)日：1994-03-22
申请号：US18116
申请日：1993-02-17
申请人： Benoit Deveaud-Pledran , Jean-Michel Gerard
发明人： Benoit Deveaud-Pledran , Jean-Michel Gerard
IPC分类号： H01L31/10 , H01L31/0352 , H01J40/14
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/035254
摘要： Photoelectric detector presenting a multiple quantum well structure, each quantum well comprising a first barrier made from a first semiconductor material, a well made from a second semiconductor material, and a second barrier made from a third semiconductor material, each semiconductor material being defined by its chemical composition, and the electric conductibility in the detector being ensured by propagation, from the first barrier to the second barrier, of given charge carriers in a given electronic band, presenting an energy extremum in each of the said materials. In accordance with the invention, said semiconductor materials are at least partly doped with carriers, the chemical composition of the first and third semiconductor materials being such that the difference in energy, between the energy extremum of the said electronic band in the first semiconductor material and the energy extremum of the said electronic band in the third semiconductor material, is greater in absolute value than the maximum energy of the optical longitudinal phonons in the second semiconductor material making up the well. Application: infrared detectors, especially in the range 2.times.10.sup.13 -4.times.10.sup.13 Hz.
摘要翻译：具有多量子阱结构的光电检测器，每个量子阱包括由第一半导体材料制成的第一屏障，由第二半导体材料制成的阱以及由第三半导体材料制成的第二阻挡层，每个半导体材料由其定义化学成分和检测器中的电导率通过在给定电子带中的给定电荷载体从第一屏障传递到第二屏障来确保，在每个所述材料中呈现能量极值。根据本发明，所述半导体材料至少部分地掺有载流子，第一和第三半导体材料的化学成分使得第一半导体材料中的所述电子带的能量极值和第三半导体材料中的所述电子带的能量极值的绝对值大于构成该阱的第二半导体材料中的光学纵向声子的最大能量。应用：红外探测器，特别在2 * 1013-4 * 1013 Hz的范围内。

4. 发明申请

US20080030845A1 Integrated Holding-Beam-At-Transparency (Hbat) Configuration For Semiconductor Optical Amplification Or Emission 审中-公开
标题翻译：集成保持透明度（Hbat）配置用于半导体光放大或发射
公开(公告)号：US20080030845A1
公开(公告)日：2008-02-07
申请号：US11576711
申请日：2005-10-07
申请人： Marc-Andre Dupertuis , Andrea Crottini , Ferran Salleras Vila , Benoit Deveaud-Pledran
发明人： Marc-Andre Dupertuis , Andrea Crottini , Ferran Salleras Vila , Benoit Deveaud-Pledran
IPC分类号： G02F1/35
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0265 , H01S5/12 , H01S5/40 , H01S5/5045 , H01S5/5072
摘要： An optical device for amplifying or emitting an optical beam of given wavelength comprises an optical source (20) in combination with a primary optical device (10) which is a semiconductor optical amplifier (SOA), a gain-clamped semiconductor optical amplifier (GCSOA), a sub-threshold gain-clamped semiconductor optical amplifier (SGCSOA), a laser diode (LD) or a superluminescent LED (SLED). The primary optical device (10) delivers an output signal of given wavelength called the signal beam and optionally receives an input beam at the same wavelength as the signal beam. Operation of the primary optical device (10) is assisted by a holding beam supplied by the optical source (20). The holding beam is of smaller wavelength than the signal beam, the holding beam wavelength being tuned close to the transparency wavelength of the primary optical device to provide a holding beam at transparency (HBAT) mode. The signal beam and the holding beam are collinear within the primary optical device (10) and within the optical source (20). The optical source and the SOA, GCSOA, SGCSOA or LD are integrated in a single semiconductor chip preferably in an in-line configuration. The optical source is transparent at the signal wavelength in the SOA, GCSOA, SGCSOA, LD or SLED. The inventive integrated HBAT configurations allow extremely fast, high-gain and low noise operation of the SOA's, GC-SOA's or SGCSOA's. They are well-suited for high-power, low noise and high speed WDM applications. The inventive integrated HBAT scheme for LD's provides laser sources with damped relaxation oscillations. Such devices, under fast direct modulation, are suitable sources for the access and metro telecommunication network.
摘要翻译：用于放大或发射给定波长的光束的光学装置包括与作为半导体光放大器（SOA）的主光学装置（10）和增益钳位半导体光放大器（GCSOA）组合的光源（20），子阈值增益钳位半导体光放大器（SGCSOA），激光二极管（LD）或超发光LED（SLED）。主光学装置（10）传送称为信号光束的给定波长的输出信号，并且可选地接收与信号光束相同波长的输入光束。通过由光源（20）提供的保持光束辅助主光学设备（10）的操作。保持光束的波长比信号光束小，保持光束的波长被调整为接近初级光学器件的透明度波长，以提供透明度（HBAT）模式的保持光束。信号光束和保持光束在主光学器件（10）内和光源（20）内共线。光源和SOA，GCSOA，SGCSOA或LD集成在单个半导体芯片中，优选为在线配置。光源在SOA，GCSOA，SGCSOA，LD或SLED中的信号波长处是透明的。本发明的集成HBAT配置允许SOA，GC-SOA或SGCSOA的极快，高增益和低噪声运行。它们非常适合大功率，低噪声和高速WDM应用。本发明的用于LD的集成HBAT方案为激光源提供阻尼弛豫振荡。这种在快速直接调制下的设备是接入和城域电信网络的合适源。

5. 发明申请

US20070007507A1 Single photon source 有权
标题翻译：单光子源
公开(公告)号：US20070007507A1
公开(公告)日：2007-01-11
申请号：US11394518
申请日：2006-03-31
申请人： Benoit Deveaud-Pledran , Cristiano Ciuti , Francois Morier-Genoud
发明人： Benoit Deveaud-Pledran , Cristiano Ciuti , Francois Morier-Genoud
IPC分类号： H01L31/00
CPC分类号： H01S5/18327 , H01S5/041 , H01S5/423
摘要： Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to localize a polariton in said microcavity.
摘要翻译：微腔包括两个反射器，至少一个分离所述反射器的半导体层和半导体量子阱，其中所述反射器和所述至少一个半导体层中的至少一个包括被调节以定位所述微腔中的极化子的结构。

6. 发明申请

US20070177253A1 Near infrared twin photon source 失效
标题翻译：近红外双光子源
公开(公告)号：US20070177253A1
公开(公告)日：2007-08-02
申请号：US11699948
申请日：2007-01-30
申请人： Ounsi Daif , Augustin Baas , Benoit Deveaud-Pledran , Francois Morier-Genoud
发明人： Ounsi Daif , Augustin Baas , Benoit Deveaud-Pledran , Francois Morier-Genoud
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/39 , G02F2001/3509 , G02F2201/17 , G02F2201/346 , G02F2202/101 , G02F2202/108 , G02F2202/36 , G02F2203/15 , H01S5/18327 , H01S5/18358
摘要： Optical parametric oscillator including a semiconductor microcavity being configured to spatially localize polaritons of at least three quantized polariton energy levels to effect an optical parametric oscillation.
摘要翻译：包括半导体微腔的光参量振荡器被配置为在空间上定位至少三个量子化极化能级的极化子以实现光参量振荡。

7. 发明授权

US5283688A Optical amplifier having a semiconductor with a short switching time 失效
标题翻译：具有切换时间短的半导体的光放大器
公开(公告)号：US5283688A
公开(公告)日：1994-02-01
申请号：US9138
申请日：1993-01-26
申请人： Benoit Deveaud-Pledran
发明人： Benoit Deveaud-Pledran
IPC分类号： H01S5/00 , H01L33/06 , H01S5/34 , H01S5/50 , H01S3/25 , C02F3/00 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/50 , H01S5/3418 , H01S5/3428
摘要： The amplifier according to the invention comprises a shallow, narrow well (P1) in which amplification takes place and a deep, wide well (P2) for collecting the carriers at the end of excitation, said well being emptied by the laser effect.Application to optical telecommunications.
摘要翻译：根据本发明的放大器包括在其中进行放大的浅的窄阱（P1）和用于在激发结束时收集载流子的深的宽阱（P2），所述阱被激光效应排空。应用于光通信。

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