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    • 4. 发明授权
    • Ion implanter with post mass selection deceleration
    • 离子注入机,后质量选择减速
    • US5969366A
    • 1999-10-19
    • US860748
    • 1997-09-08
    • Jonathan Gerald EnglandStephen MoffattDavid George ArmourMajeed Foad
    • Jonathan Gerald EnglandStephen MoffattDavid George ArmourMajeed Foad
    • H01J37/05H01J37/30H01J37/317
    • H01J37/3171H01J37/3007H01J2237/04756
    • A post mass selection decel lens (9) is located between the exit aperture (55) of the mass selection chamber (47) and the entry (74) to the electron confinement tube (69) of the PFS. The lens comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential, and a field electrode (61) between them at a relatively high (negative) potential sufficient to provide focusing of the ion beam at the first electrode. The first electrode is larger than the beam to avoid deflecting ions at the periphery of the aperture out of the beam. The first electrode has an aperture which is smaller than that of the field electrode. The field electrode is at least -5 kV relative to the flight tube, that is substantially more than required for electron suppression. Additional apertures are provided between the process chamber and the mass selection chamber to improve evacuation.
    • PCT No.PCT / GB96 / 02740 Sec。 371日期:1997年9月8日 102(e)1997年9月8日PCT PCT 1996年11月8日PCT公布。 第WO97 / 17716号公报 日期1997年5月15日后质量选择减速透镜(9)位于质量选择室(47)的出口孔(55)和PFS的电子限制管(69)的入口(74)之间。 该透镜包括在基底电位处的第一电极(65),处于飞行管电位的第二电极(60)和位于它们之间的场电极(61),其处于相对高(负)电位,足以提供离子的聚焦 光束在第一电极处。 第一电极大于光束,以避免将光圈外围的离子偏离光束。 第一电极具有小于场电极的孔径。 场电极相对于飞行管至少为-5kV,这实质上大于电子抑制所需要的。 在处理室和质量选择室之间提供额外的孔,以改善抽气。
    • 5. 发明授权
    • Ion beam apparatus and a method for neutralizing space charge in an ion beam
    • 离子束装置和用于中和离子束中的空间电荷的方法
    • US06515408B1
    • 2003-02-04
    • US09700206
    • 2001-02-15
    • Jonathan Gerald EnglandAndrew HolmesDavid ArmourJaap Van Den BergStephen Moffatt
    • Jonathan Gerald EnglandAndrew HolmesDavid ArmourJaap Van Den BergStephen Moffatt
    • H05H300
    • H01J49/02H01J37/026H01J37/3171H01J2237/0041
    • A source of thermionic electrons is provided inside the flight tube of a magnet, especially an analysing magnet, and extends along the beam flight path. This allows space charge to be neutralised along the beam's axis in spite of severely restricted electron mobility in this direction owing to the presence of substantially transverse magnetic field. Thermionically emitted electrons may contribute directly to the neutralisation of space charge in positive ion beams, or, in the case of negative ion beams, indirectly by ionizing residual or deliberately introduced neutral gas atoms or molecules. Examples are described and claimed in which the source is arranged outside the nominal beam envelope in the flight tube, but linked to the beam by magnetic flux generated in the flight tube. This reduces erosion of the source by the beam and so reduces beam contamination. In these examples, an important feature is the provision of electron repellers to reflect electrons back and forth across the beam. Alternative arrangements are described and claimed in which the source is positioned inside the beam. The thermionic electron source may comprise an array of filaments, and preferably is negatively biased with respect to the flight tube. Adjustment of this bias enables the energy of emitted electrons to be controlled.
    • 在一个磁体的飞行管内部,特别是一个分析磁体的内部,设有一个热离子电子源,并沿着光束飞行路径延伸。 尽管由于存在基本上横向的磁场,但是在该方向上电子迁移率受到严格的限制,这允许空间电荷沿着光束的轴线被中和。 热离子发射的电子可以直接影响正离子束中的空间电荷的中和,或者在负离子束的情况下,间接地通过电离剩余或故意引入的中性气体原子或分子。 这些实施例被描述和要求保护,其中源被布置在飞行管中的标称束包络外部,但是通过在飞行管中产生的磁通量与束束相连。 这减少了光束对光源的侵蚀,从而减少了光束的污染。 在这些示例中,重要的特征是提供电子驱除器以反射来自横梁的电子。 描述和要求保护其中源位于梁内的替代布置。 热离子电子源可以包括长丝阵列,并且优选地相对于飞行管负偏压。 该偏置的调整使得能够控制发射电子的能量。
    • 6. 发明授权
    • Ambient laminar gas flow distribution in laser processing systems
    • 激光加工系统环境层流气流分布
    • US09557111B2
    • 2017-01-31
    • US13204068
    • 2011-08-05
    • Stephen MoffattAaron Muir Hunter
    • Stephen MoffattAaron Muir Hunter
    • F27D5/00
    • F27D21/00F27D5/0037F27D2021/0078H01L21/67115
    • A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.
    • 公开了半导体衬底退火的方法和装置。 该装置具有退火能量源和衬底支撑件,其中屏蔽构件设置在退火能量源和衬底支撑件之间。 屏蔽构件是具有大于在基板支撑件上处理的基板的尺寸的基本上平坦的构件,窗口覆盖基本平坦的构件中的中心开口。 中心开口具有气体入口入口和气体出口入口,每个入口入口和气体出口通道分别与气体入口气室和气体出口增压室流体连通。 连接构件设置在中心开口周围并将窗口保持在中心开口的上方。 连接构件中的连接开口分别通过气体入口导管和通过连接构件形成的气体出口导管与气体入口气室和气体出口增压室流体连通。
    • 7. 发明授权
    • Magneto-thermal processing apparatus and methods
    • 磁热处理装置及方法
    • US09376731B2
    • 2016-06-28
    • US13864959
    • 2013-04-17
    • Stephen Moffatt
    • Stephen Moffatt
    • C21D9/00B23K26/00H01L21/268
    • C21D9/0006B23K26/354H01L21/268
    • An apparatus is disclosed for magneto-thermal processing of substrates comprises a work surface for supporting a substrate for processing, a source of electromagnetic radiation that delivers an intense electromagnetic field to an area of a substrate disposed on the work surface, and a magnetic assembly that delivers a magnetic field to the area of the substrate. The intense electromagnetic field typically has an energy density of at least about 0.2 J/cm2 and a cross-sectional area typically not more than about 10 cm2. The magnetic field typically has a strength at least about 0.5 T and an area not more than about 10 cm2.
    • 公开了一种用于基板的磁热处理的装置,包括用于支撑用于处理的基板的工作表面,将电磁辐射源传送到设置在工作表面上的基板的区域的电磁辐射源,以及磁性组件, 向基板的区域传递磁场。 强电场通常具有至少约0.2J / cm 2的能量密度和通常不超过约10cm 2的横截面积。 磁场通常具有至少约0.5T的强度和不超过约10cm 2的面积。