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1. 发明申请

US20100275972A1 Enclosed, Off-axis Solar Concentrator 有权
标题翻译：封闭的离轴太阳能集中器
公开(公告)号：US20100275972A1
公开(公告)日：2010-11-04
申请号：US12562729
申请日：2009-09-18
申请人： Pablo Benitez , Robert E. Grip , Juan C. Minano , Authi A. Narayanan , Adam Plesniak , Joel A. Schwartz
发明人： Pablo Benitez , Robert E. Grip , Juan C. Minano , Authi A. Narayanan , Adam Plesniak , Joel A. Schwartz
IPC分类号： H01L31/052
CPC分类号： H01L31/0547 , F24S23/30 , F24S23/71 , F24S25/40 , F24S25/60 , F24S80/40 , F24S2023/84 , F24S2025/6004 , Y02E10/42 , Y02E10/47 , Y02E10/52
摘要： A solar concentrator including a housing having a receiving wall, a reflecting wall and at least two end walls, the receiving, reflecting and end walls defining a three-dimensional volume having an inlet, wherein a vertical axis of the housing is generally perpendicular to the inlet, a receiver mounted on the receiving wall of the housing, the receiver including at least one photovoltaic cell, wherein a vertical axis of the receiver is disposed at a non-zero angle relative to the vertical axis of the housing, at least one clip disposed on the reflecting wall, an optical element received within the three-dimensional volume, the optical element including at least one tab, the tab being engaged by the clip to align the optical element with the receiver, and a window received over the inlet to enclose the housing.
摘要翻译：一种太阳能集中器，包括具有接收壁，反射壁和至少两个端壁的壳体，所述接收反射壁和端壁限定具有入口的三维体积，其中壳体的垂直轴线大致垂直于入口，安装在所述壳体的接收壁上的接收器，所述接收器包括至少一个光伏电池，其中所述接收器的垂直轴线相对于所述壳体的垂直轴线以非零角度设置，至少一个夹子设置在所述反射壁上的光学元件，所述光学元件被容纳在所述三维体积内，所述光学元件包括至少一个突出部，所述突出部被所述夹子接合以使所述光学元件与所述接收器对准，以及窗口，封住房屋

2. 发明授权

US07122733B2 Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds 失效
标题翻译：具有用于生长单晶硼化合物的缓冲层的多结光伏电池
公开(公告)号：US07122733B2
公开(公告)日：2006-10-17
申请号：US10236797
申请日：2002-09-06
申请人： Authi A. Narayanan , Joel A. Schwartz
发明人： Authi A. Narayanan , Joel A. Schwartz
IPC分类号： H01L31/04 , H01L31/06
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/0693 , Y02E10/544
摘要： The present invention provides a solar cell comprising a substrate, a first buffer layer disposed above the base layer, a second buffer layer disposed above the first buffer layer, a first boron compound layer disposed above the second buffer layer, a second boron compound layer disposed above the first compound layer, and a window layer disposed above the second compound layer, wherein the first compound layer comprises a first type of doping, wherein the second compound layer comprises a second type of doping, wherein the second buffer layer comprises a higher energy bandgap than the first compound layer, and wherein the first buffer layer and the second buffer layer permit a boron content in the first compound layer and the second compound layer to be greater than 3 %.
摘要翻译：本发明提供了一种太阳能电池，其包括基板，设置在基底层上方的第一缓冲层，设置在第一缓冲层上方的第二缓冲层，设置在第二缓冲层上方的第一硼化合物层，设置在第二缓冲层上的第二硼化合物层在第一化合物层上方，以及设置在第二化合物层上方的窗口层，其中第一化合物层包括第一类型的掺杂，其中第二化合物层包括第二类型的掺杂，其中第二缓冲层包含较高的能量并且其中第一缓冲层和第二缓冲层允许第一化合物层和第二化合物层中的硼含量大于3％。

3. 发明授权

US08592673B2 Enclosed, off-axis solar concentrator 有权
标题翻译：封闭的离轴太阳能集中器
公开(公告)号：US08592673B2
公开(公告)日：2013-11-26
申请号：US12562729
申请日：2009-09-18
申请人： Pablo Benitez , Robert E. Grip , Juan C. Minano , Authi A. Narayanan , Adam Plesniak , Joel A. Schwartz
发明人： Pablo Benitez , Robert E. Grip , Juan C. Minano , Authi A. Narayanan , Adam Plesniak , Joel A. Schwartz
IPC分类号： H02N6/00 , H01L31/042
CPC分类号： H01L31/0547 , F24S23/30 , F24S23/71 , F24S25/40 , F24S25/60 , F24S80/40 , F24S2023/84 , F24S2025/6004 , Y02E10/42 , Y02E10/47 , Y02E10/52
摘要： A solar concentrator including a housing having a receiving wall, a reflecting wall and at least two end walls, the receiving, reflecting and end walls defining a three-dimensional volume having an inlet, wherein a vertical axis of the housing is generally perpendicular to the inlet, a receiver mounted on the receiving wall of the housing, the receiver including at least one photovoltaic cell, wherein a vertical axis of the receiver is disposed at a non-zero angle relative to the vertical axis of the housing, at least one clip disposed on the reflecting wall, an optical element received within the three-dimensional volume, the optical element including at least one tab, the tab being engaged by the clip to align the optical element with the receiver, and a window received over the inlet to enclose the housing.
摘要翻译：一种太阳能集中器，包括具有接收壁，反射壁和至少两个端壁的壳体，所述接收反射壁和端壁限定具有入口的三维体积，其中壳体的垂直轴线大致垂直于入口，安装在所述壳体的接收壁上的接收器，所述接收器包括至少一个光伏电池，其中所述接收器的垂直轴线相对于所述壳体的垂直轴线以非零角度设置，至少一个夹子设置在所述反射壁上的光学元件，所述光学元件被容纳在所述三维体积内，所述光学元件包括至少一个突出部，所述突出部被所述夹子接合以使所述光学元件与所述接收器对准，以及窗口，封住房屋

4. 发明授权

US07217585B1 Method for fabricating and using a light waveguide 有权
标题翻译：制造和使用光波导的方法
公开(公告)号：US07217585B1
公开(公告)日：2007-05-15
申请号：US11395702
申请日：2006-03-31
申请人： David S. Sumida , Authi A. Narayanan , Hans W. Bruesselbach
发明人： David S. Sumida , Authi A. Narayanan , Hans W. Bruesselbach
IPC分类号： H01L21/20
CPC分类号： G02B6/1342
摘要： A waveguide is fabricated by first preparing two waveguide precursor pieces. Each waveguide precursor piece includes a single-crystal substrate, and an epitaxial coating layer of an oxide coating material on the substrate. The oxide substrate material preferably comprises yttrium as a substrate-material cation, and the oxide coating material preferably comprises a coating-material cation selected from the group consisting of ytterbium, thulium, erbium, and holmium. The two substrates are placed together with the coating layers in contact to form a precursor structure. The precursor structure is heated to an elevated diffusion temperature so that the coating layers bond together and the coating materials and the respective substrate materials interdiffuse to form the waveguide having an interdiffused region. A laser beam may be directed through the interdiffused region, while the interdiffused region is optionally optically pumped through one or both of the substrates.
摘要翻译：通过首先制备两个波导前体件来制造波导。每个波导前体件包括单晶衬底和在衬底上的氧化物涂层材料的外延涂层。氧化物基材优选包含作为基材材料阳离子的钇，氧化物涂层材料优选包含选自镱，ium，铒和钬的涂料阳离子。将两个基板与涂层接触放置在一起以形成前体结构。将前体结构加热到升高的扩散温度，使得涂层结合在一起，并且涂层材料和相应的衬底材料相互扩散以形成具有相互扩散区域的波导。激光束可以被引导穿过相互扩散的区域，而相互扩散的区域可选地被光泵浦通过一个或两个基底。

5. 发明申请

US20100116318A1 PIXELATED PHOTOVOLTAIC ARRAY METHOD AND APPARATUS 审中-公开
标题翻译：像素光伏阵列方法和装置
公开(公告)号：US20100116318A1
公开(公告)日：2010-05-13
申请号：US11683434
申请日：2007-03-08
申请人： David S. Sumida , Dennis C. Jones , Hans W. Bruesselbach , Authi A. Narayanan
发明人： David S. Sumida , Dennis C. Jones , Hans W. Bruesselbach , Authi A. Narayanan
IPC分类号： H01L31/052
CPC分类号： H01L31/0543 , H01L31/0547 , Y02E10/52
摘要： The present invention comprises a method and apparatus to increase the efficiency of photovoltaic conversion of light into electrical power and to achieve operation at higher optical power and therefore higher electrical power. Preferred embodiments increase the efficiency of photovoltaic power conversion of any source of a beam of photons by spatially dividing the beams into a plurality of individual beamlets, each beamlet focusing on an active photovoltaic region. The preferred architecture of the apparatus of the invention comprises spatially separated photovoltaic cells to substantially match the pattern of the spatially separated plurality of beamlets. Preferred embodiments result in a significant reduction in ohmic losses and current shunting, thereby increasing photovoltaic conversion efficiencies.
摘要翻译：本发明包括一种方法和装置，用于提高光转换成电力的光电转换的效率，并实现在较高的光功率和因此更高的电功率下的操作。优选实施例通过将光束空间分割成多个单独的子束，从而增加了光子束的任何光源的光伏功率转换的效率，每个子束聚焦在有源光伏区域上。本发明的装置的优选结构包括空间分离的光伏电池，以基本匹配空间分离的多个子束的图案。优选实施例导致欧姆损耗和电流分流的显着降低，从而提高光伏转换效率。

6. 发明授权

US5993981A Broadband protective optical window coating 失效
标题翻译：宽带保护光学窗口涂层
公开(公告)号：US5993981A
公开(公告)日：1999-11-30
申请号：US844715
申请日：1997-04-18
申请人： Joel Askinazi , Authi A. Narayanan , Hoa T. Bui , Joseph A. Vigil , John J. Vajo
发明人： Joel Askinazi , Authi A. Narayanan , Hoa T. Bui , Joseph A. Vigil , John J. Vajo
IPC分类号： G02B1/11 , B32B9/00 , G02B1/10
CPC分类号： G02B1/115
摘要： The present invention provides a broadband transmitting protective coating (10) including an AlGaP protective layer (14) deposited on an optical substrate (12) and an anti-reflection film (16) deposited on the AlGaP protective layer (14). The coating (10) is suitable for use with typical infrared and broadband optical substrate materials such as germanium or multi-spectral ZnS. In the case of a germanium substrate (12), the anti-reflection film (16), (16a) preferably consists of a single layer of hard carbon or alternating layers of hard carbon and silicon. In the case of a multi-spectral ZnS substrate (12a), the anti-reflection film (16b) preferably consists of layered Al.sub.2 O.sub.3 /TaO.sub.5 /LaF.sub.3 /MgF.sub.2. The protective coating (10) is preferably deposited on the optical substrate (12) by a metal organic chemical vapor deposition process wherein an initial layer of AlP is nucleated on the substrate (12) at a temperature of approximately 400.degree. C. The temperature of the substrate (12) is then raised to approximately 600.degree. C. and a layer of AlGaP (14) is grown on the substrate (12) to a preselected thickness. The AlGaP coated optical substrate (12) is then polished to a desired smoothness. The anti-reflection film (16) is then deposited on the AlGaP layer (14) using an RF chemical vapor deposition process or a thermal evaporation process.
摘要翻译：本发明提供了一种宽带传输保护涂层（10），其包括沉积在AlGaP保护层（14）上的沉积在光学基片（12）上的AlGaP保护层（14）和抗反射膜（16）。涂层（10）适用于典型的红外和宽带光学基板材料，如锗或多光谱ZnS。在锗基板（12）的情况下，防反射膜（16），（16a）优选由单层硬碳或硬碳和硅的交替层组成。在多光谱ZnS衬底（12a）的情况下，抗反射膜（16b）优选由层状Al 2 O 3 / TaO 5 / LaF 3 / MgF 2组成。保护涂层（10）优选通过金属有机化学气相沉积方法沉积在光学基底（12）上，其中初始的AlP层在基底（12）上在约400℃的温度下成核。然后将衬底（12）升高至约600℃，并且在衬底（12）上生长一层AlGaP（14）至预定厚度。然后将AlGaP涂覆的光学基板（12）抛光至所需的平滑度。然后使用RF化学气相沉积工艺或热蒸发工艺将抗反射膜（16）沉积在AlGaP层（14）上。

7. 发明授权

US5557140A Process tolerant, high-voltage, bi-level capacitance varactor diode 失效
标题翻译：工艺容差，高电压双电容变容二极管
公开(公告)号：US5557140A
公开(公告)日：1996-09-17
申请号：US420959
申请日：1995-04-12
申请人： Chanh M. Nguyen , Michael G. Case , William W. Hooper , Authi A. Narayanan
发明人： Chanh M. Nguyen , Michael G. Case , William W. Hooper , Authi A. Narayanan
IPC分类号： H01L29/93
CPC分类号： H01L29/93
摘要： A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,>100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.
摘要翻译：公开了一种用于实现表现出高击穿电压VBR（例如> 100伏特）和具有双电平特性的电容的变容二极管的掺杂分布。特别地，电容具有Cmax电平和Cmin电平。掺杂分布包括两个轻掺杂区域，并且在它们之间具有较高掺杂的第三区域。前两个区域的掺杂浓度和宽度基本上设定了Cmax / Cmin的调谐比，并且第三区域的掺杂浓度和宽度基本上设定了双电平电容之间的转变电压VTR。

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