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1. 发明授权

US08068528B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08068528B2
公开(公告)日：2011-11-29
申请号：US12523277
申请日：2007-06-06
申请人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
发明人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/34313
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
摘要翻译：量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层，并且具有级联结构，其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。此外，量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup，发射低电平Llow和弛豫微型MB，以及光通过从上层到下层的电子的子带间跃迁产生，并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB，从注入层18注入到后级发射层通过miniband MB。由此，可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器，以提高其激光器的操作性能。

2. 发明申请

US20140241392A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20140241392A1
公开(公告)日：2014-08-28
申请号：US14342938
申请日：2012-07-04
申请人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
发明人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/124 , H01S5/3402
摘要： A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.
摘要翻译：量子级联激光器1包括半导体衬底，设置在半导体衬底上并具有级联结构的有源层15，其中包括量子阱发光层和注入层的单元层状结构16以多个重叠的方式交替堆叠堆叠量子阱发光层和注入层，以及设置在有源层上的衍射光栅层20。

3. 发明授权

US09620921B2 Quantum cascade laser manufacturing method 有权
公开(公告)号：US09620921B2
公开(公告)日：2017-04-11
申请号：US14342895
申请日：2012-07-04
申请人： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
发明人： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
IPC分类号： H01S5/34 , H01S3/08 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01S5/12 , B29C33/42 , G03F7/00
CPC分类号： H01S3/08009 , B29C33/424 , B29C2033/426 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G03F7/0002 , H01S5/124 , H01S5/3401 , H01S5/3402
摘要： A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper 201 having a second groove pattern P2; a step of making a wafer with an active layer formed on a semiconductor substrate; a step of forming a resist film 304 on a surface on the active layer side of the wafer; a step of pressing the resin stamper against the resist film 304 by air pressure to form a third groove pattern P3 on the resist film 304; and a step of etching the wafer with the resist film 304 serving as a mask to form a diffraction grating on a surface of the wafer.

4. 发明申请

US20090052488A1 QUANTUM CASCADE LASER ELEMENT 有权
标题翻译：量子CASCADE激光元件
公开(公告)号：US20090052488A1
公开(公告)日：2009-02-26
申请号：US12194946
申请日：2008-08-20
申请人： Atsushi SUGIYAMA , Takahide Ochiai , Kazuue Fujita , Naota Akikusa , Tadataka Edamura , Shinichi Furuta
发明人： Atsushi SUGIYAMA , Takahide Ochiai , Kazuue Fujita , Naota Akikusa , Tadataka Edamura , Shinichi Furuta
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S3/08031 , H01S5/0655 , H01S5/2272 , H01S5/3412 , H01S5/34366
摘要： A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element 1, a top-grating approach for which a diffraction grating 7 is formed on a laminate 3 is adopted, and thus in comparison with a buried-grating approach, deterioration in temperature characteristics of the laser element and decline in the yield and reproducibility are suppressed. In addition, since the thickness of a cladding layer 5 located between an active layer 4 and the diffraction grating 7 is within a range of 42±10% of the oscillation wavelength, weakening of light seeping from the active layer 4 to the diffraction grating 7 or an increase in light leakage is prevented. Consequently, by the quantum cascade laser element 1, a single-mode light can be reliably CW-oscillated even at room temperature or a temperature in proximity thereof.
摘要翻译：提供即使在室温或其附近的温度也可以可靠地CW振荡单模光的DFB量子级联激光元件。在量子级联激光元件1中，采用了在层压板3上形成衍射光栅7的顶部光栅方法，因此与掩埋光栅方法相比，激光元件的温度特性的劣化和下降产量和再现性被抑制。此外，由于位于有源层4和衍射光栅7之间的包覆层5的厚度在振荡波长的42±10％的范围内，因此从有源层4向衍射光栅7渗透的光的弱化或者防止光泄漏的增加。因此，通过量子级联激光元件1，即使在室温或其附近的温度下，也可以将单模光可靠地CW振荡。

5. 发明授权

US08958450B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08958450B2
公开(公告)日：2015-02-17
申请号：US14342938
申请日：2012-07-04
申请人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
发明人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
IPC分类号： H01S5/00 , H01S5/34 , H01S5/12
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/124 , H01S5/3402
摘要： A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.
摘要翻译：量子级联激光器1包括半导体衬底，设置在半导体衬底上并具有级联结构的有源层15，其中包括量子阱发光层和注入层的单元层状结构16以多个重叠的方式交替堆叠堆叠量子阱发光层和注入层，以及设置在有源层上的衍射光栅层20。

6. 发明申请

US20100111127A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20100111127A1
公开(公告)日：2010-05-06
申请号：US12523277
申请日：2007-06-06
申请人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
发明人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
IPC分类号： H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/34313
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
摘要翻译：量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层，并且具有级联结构，其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。此外，量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup，发射低电平Llow和弛豫微型MB，以及光通过从上层到下层的电子的子带间跃迁产生，并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB，从注入层18注入到后级发射层通过miniband MB。由此，可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器，以提高其激光器的操作性能。

7. 发明申请

US20140199798A1 QUANTUM CASCADE LASER MANUFACTURING METHOD 有权
标题翻译：量子CASCADE激光制造方法
公开(公告)号：US20140199798A1
公开(公告)日：2014-07-17
申请号：US14342895
申请日：2012-07-04
申请人： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
发明人： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
IPC分类号： H01S3/08 , H01S5/34
CPC分类号： H01S3/08009 , B29C33/424 , B29C2033/426 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G03F7/0002 , H01S5/124 , H01S5/3401 , H01S5/3402
摘要： A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper 201 having a second groove pattern P2; a step of making a wafer with an active layer formed on a semiconductor substrate; a step of forming a resist film 304 on a surface on the active layer side of the wafer; a step of pressing the resin stamper against the resist film 304 by air pressure to form a third groove pattern P3 on the resist film 304; and a step of etching the wafer with the resist film 304 serving as a mask to form a diffraction grating on a surface of the wafer.
摘要翻译：量子级联激光器制造方法包括：将母模压在具有柔性的树脂膜上以制造具有第二凹槽图案P2的树脂压模201的步骤; 制造在半导体衬底上形成有源层的晶片的步骤; 在晶片的有源层侧的表面上形成抗蚀膜304的工序; 通过空气压力将树脂压模压靠在抗蚀剂膜304上以在抗蚀膜304上形成第三凹槽图案P3的步骤; 以及用抗蚀剂膜304作为掩模来蚀刻晶片以在晶片的表面上形成衍射光栅的步骤。

8. 发明授权

US08098701B2 Quantum cascade laser element 有权
标题翻译：量子级联激光元件
公开(公告)号：US08098701B2
公开(公告)日：2012-01-17
申请号：US12194946
申请日：2008-08-20
申请人： Atsushi Sugiyama , Takahide Ochiai , Kazuue Fujita , Naota Akikusa , Tadataka Edamura , Shinichi Furuta
发明人： Atsushi Sugiyama , Takahide Ochiai , Kazuue Fujita , Naota Akikusa , Tadataka Edamura , Shinichi Furuta
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/12 , B82Y20/00 , H01S3/08031 , H01S5/0655 , H01S5/2272 , H01S5/3412 , H01S5/34366
摘要： A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element 1, a top-grating approach for which a diffraction grating 7 is formed on a laminate 3 is adopted, and thus in comparison with a buried-grating approach, deterioration in temperature characteristics of the laser element and decline in the yield and reproducibility are suppressed. In addition, since the thickness of a cladding layer 5 located between an active layer 4 and the diffraction grating 7 is within a range of 42±10% of the oscillation wavelength, weakening of light seeping from the active layer 4 to the diffraction grating 7 or an increase in light leakage is prevented. Consequently, by the quantum cascade laser element 1, a single-mode light can be reliably CW-oscillated even at room temperature or a temperature in proximity thereof.
摘要翻译：提供即使在室温或其附近的温度也可以可靠地CW振荡单模光的DFB量子级联激光元件。在量子级联激光元件1中，采用了在层压板3上形成衍射光栅7的顶部光栅方法，因此与掩埋光栅方法相比，激光元件的温度特性的劣化和下降产量和再现性被抑制。此外，由于位于有源层4和衍射光栅7之间的包覆层5的厚度在振荡波长的42±10％的范围内，因此从有源层4向衍射光栅7渗透的光的弱化或者防止光泄漏的增加。因此，通过量子级联激光元件1，即使在室温或其附近的温度下，也可以将单模光可靠地CW振荡。

9. 发明授权

US08374208B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08374208B2
公开(公告)日：2013-02-12
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures each including a quantum well emission layer and an injection layer. Moreover, the unit laminate structure has, in its subband level structure, an emission upper level, a lower level, and an injection level 4 of higher energy than the upper level, and light hν is generated by intersubband transition of electrons from the level to the level in the emission layer, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer. In addition, the emission layer includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元层压结构的级联结构，每个层叠结构均包括量子阱发射层和注入层。此外，单元层叠结构在其子带层结构中具有比上层更高能量的发射上限，较低水平和注入水平4，以及光h＆ngr; 通过电子从发射层中的电平的子带间跃迁产生，并且发射转变后的电子经由注入层注入到后续级的注入级4中。此外，发射层包括两个或更多个阱层，并且最靠近前一级的注入层的第一阱层用作用于注入电平形成的阱层。

10. 发明申请

US20080069164A1 Quantum cascade laser 失效
标题翻译：量子级联激光器
公开(公告)号：US20080069164A1
公开(公告)日：2008-03-20
申请号：US11979294
申请日：2007-11-01
申请人： Tadataka Edamura , Naota Akikusa
发明人： Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/32366 , H01S5/3402 , H01S5/34313
摘要： A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.
摘要翻译：通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11，通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。此外，在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构，其包括波导芯层12和14，每个波导芯层12和14由n型GaInNA层形成，其为形成为与GaAs衬底10晶格匹配的N（氮）的III-V族化合物半导体以及由n + GaAs层。从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。

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