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    • 3. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US08068528B2
    • 2011-11-29
    • US12523277
    • 2007-06-06
    • Tadataka EdamuraNaota AkikusaKazuue FujitaAtsushi SugiyamaTakahide Ochiai
    • Tadataka EdamuraNaota AkikusaKazuue FujitaAtsushi SugiyamaTakahide Ochiai
    • H01S5/00
    • H01S5/3402B82Y20/00H01S5/3086H01S5/309H01S5/34313
    • A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
    • 量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层,并且具有级联结构,其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。 此外,量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup,发射低电平Llow和弛豫微型MB,以及 光通过从上层到下层的电子的子带间跃迁产生,并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB,从注入层18注入到 后级发射层通过miniband MB。 由此,可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器,以提高其激光器的操作性能。
    • 4. 发明申请
    • QUANTUM CASCADE LASER
    • 量子CASCADE激光
    • US20100111127A1
    • 2010-05-06
    • US12523277
    • 2007-06-06
    • Tadataka EdamuraNaota AkikusaKazuue FujitaAtsushi SugiyamaTakahide Ochiai
    • Tadataka EdamuraNaota AkikusaKazuue FujitaAtsushi SugiyamaTakahide Ochiai
    • H01S5/343
    • H01S5/3402B82Y20/00H01S5/3086H01S5/309H01S5/34313
    • A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
    • 量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层,并且具有级联结构,其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。 此外,量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup,发射低电平Llow和弛豫微型MB,以及 光通过从上层到下层的电子的子带间跃迁产生,并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB,从注入层18注入到 后级发射层通过miniband MB。 由此,可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器,以提高其激光器的操作性能。