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1. 发明授权

US4038159A Method for fabrication of manganese oxide solid electrolyte capacitor 失效
标题翻译：锰氧化物固体电解质电容器的制备方法
公开(公告)号：US4038159A
公开(公告)日：1977-07-26
申请号：US632079
申请日：1975-11-14
申请人： Atsushi Nishino , Hayashi Hayakawa , Hiroshi Kumano
发明人： Atsushi Nishino , Hayashi Hayakawa , Hiroshi Kumano
IPC分类号： H01G9/032 , H01G4/10 , H01G9/00 , H01G9/02 , H01G9/05
CPC分类号： H01G9/0036
摘要： A manganese dioxide layer of improved quality is formed on an anodized valve metal substrate by repeating only a few times the steps of immersing the substrate in an aqueous solution of manganese nitrate and heating the wet substrate to cause pyrolytic decomposition of manganese nitrate to manganese dioxide in a semiclosed radiant furnace, wherein the decomposition proceeds under a positive pressure of a small magnitude due to prolonged retention of gaseous decomposition products.

2. 发明授权

US4071636A Method of producing sheet-formed bactericidal article 失效
标题翻译：生产片状杀菌物品的方法
公开(公告)号：US4071636A
公开(公告)日：1978-01-31
申请号：US595229
申请日：1975-07-11
申请人： Atsushi Nishino , Kazunori Sonetake , Hiroshi Kumano
发明人： Atsushi Nishino , Kazunori Sonetake , Hiroshi Kumano
IPC分类号： A61L2/16 , B01D39/08 , C02F1/50
CPC分类号： B01D39/083 , A61L2/16 , B01D39/1623 , C02F1/505 , B01D2239/0407 , B01D2239/0421 , B01D2239/0442 , B01D2239/0464 , B01D2239/0478 , B01D2325/48
摘要： A sheet of partially acetalled polyvinyl alcohol is used as the substratum of the article, and a sparingly soluble silver halide is precipitated on the sheet from an aqueous phase such as an ammoniacal silver chloride solution.
摘要翻译：使用部分缩醛的聚乙烯醇片作为制品的底层，并且从水相如氨化氯化银溶液中将少量溶解的卤化银沉淀在片材上。

3. 发明授权

US3959021A Novel manganese dioxide 失效
标题翻译：新型二氧化锰
公开(公告)号：US3959021A
公开(公告)日：1976-05-25
申请号：US430521
申请日：1974-01-03
申请人： Atsushi Nishino , Hiroshi Kumano , Yoshinori Noguchi , Kazunori Sonetaka , Yasuji Amano
发明人： Atsushi Nishino , Hiroshi Kumano , Yoshinori Noguchi , Kazunori Sonetaka , Yasuji Amano
IPC分类号： C25B1/21 , H01M4/50 , C01G45/02
CPC分类号： H01M4/50 , C25B1/21
摘要： Manganese dioxide obtained at the cathode by electrolyzing a hydrochloric acid-acidified aqueous manganese chloride solution with a specific current efficiency is high in oxygen content and extremely active as a depolarizer for cells.
摘要翻译：通过以比电流电解电解盐酸酸化的氯化锰水溶液在阴极获得的二氧化锰的氧含量高，并且作为电池的去极化剂非常活跃。

4. 发明授权

US3932578A Method of making reaction bed material for artificial mineral water production 失效
标题翻译：生产人造矿泉水的反应床料的方法
公开(公告)号：US3932578A
公开(公告)日：1976-01-13
申请号：US378871
申请日：1973-07-13
申请人： Atsushi Nishino , Hiroshi Kumano , Kazunori Sonetaka
发明人： Atsushi Nishino , Hiroshi Kumano , Kazunori Sonetaka
IPC分类号： B41B1/20 , C02F1/00 , B29B1/04
CPC分类号： C02F1/00 , B41B1/20
摘要： A molded material comprising CaCO.sub.3 and/or MgCO.sub.3 is made and used as a reaction bed through which carbonated water is run to make mineral water.
摘要翻译：制备包含CaCO 3和/或MgCO 3的模制材料并用作反应床，通过该反应床使碳酸水运行以制备矿泉水。

5. 发明申请

US20050100800A1 Stencil mask and method of producing the same 审中-公开
标题翻译：模板面膜及其制造方法
公开(公告)号：US20050100800A1
公开(公告)日：2005-05-12
申请号：US10983708
申请日：2004-11-09
申请人： Tadahiko Hirakawa , Hiroshi Kumano
发明人： Tadahiko Hirakawa , Hiroshi Kumano
IPC分类号： H01L21/266 , G03F1/20 , H01L21/027 , H01L21/265 , G03F9/00 , G03C5/00
CPC分类号： G03F1/20 , H01J2237/31711
摘要： To provide a stencil mask that contamination generating because a material layer set in the surface of a stencil mask is sputtered by a charged particle beam can be-prevented and a method of producing the same. A stencil mask has a thin film having an aperture pattern and a method of producing the same, and a stencil mask and the method of producing the same has an aspect that a material layer having heat conductance higher than that of a thin film is set in the region except for a portion of outer edge of the aperture pattern in the side of a principal surface of a thin film.
摘要翻译：为了提供一种模板掩模，可以防止由于通过带电粒子束溅射设置在模板掩模的表面中的材料层而产生的污染物及其制造方法。模板掩模具有具有孔径图案的薄膜及其制造方法，并且模板掩模及其制造方法具有将导热率高于薄膜的材料层设置在除了在薄膜的主表面侧的孔图案的外边缘的一部分之外的区域。

6. 发明授权

US4207097A Lead alloy for lead-acid batteries and process for producing the alloy 失效
标题翻译：铅酸蓄电池铅合金及合金制造工艺
公开(公告)号：US4207097A
公开(公告)日：1980-06-10
申请号：US969556
申请日：1978-12-14
申请人： Sadao Fukuda , Hidemi Fukunaga , Hiroshi Kumano
发明人： Sadao Fukuda , Hidemi Fukunaga , Hiroshi Kumano
IPC分类号： C22C11/06 , H01M4/68
CPC分类号： H01M4/685 , C22C11/06
摘要： An alloy consisting predominantly of lead and containing 0.1 to 3.0% by weight of tin, 0.1 to 0.3% by weight of arsenic and 0.01 to 0.1% by weight of aluminum or copper. The alloy may further contain 0.002 to 1.0% by weight of cadmium. The alloy is useful for grids, inter-cell connectors and poles to provide lead-acid batteries less prone to self-discharge and capable of withstanding over discharge.
摘要翻译：主要由铅组成并含有0.1〜3.0重量％的锡，0.1〜0.3重量％的砷和0.01〜0.1重量％的铝或铜的合金。该合金还可以含有0.002〜1.0重量％的镉。该合金可用于网格，电池间连接器和电极，以提供不容易自放电并能够承受过放电的铅酸电池。

7. 发明申请

US20080099874A1 SEMICONDUCTOR INTEGRATED CIRCUIT CAPABLE OF REALIZING REDUCTION IN SIZE 审中-公开
标题翻译：具有实现减小尺寸的半导体集成电路
公开(公告)号：US20080099874A1
公开(公告)日：2008-05-01
申请号：US11923132
申请日：2007-10-24
申请人： Hiroshi Kumano
发明人： Hiroshi Kumano
IPC分类号： H01L29/00
CPC分类号： H01L21/76286
摘要： In a semiconductor integrated circuit in which an element isolating insulation film is provided on a substrate, an isolated Si region in the substrate is a shape composed of straight lines which form four sides and circular arcs which form four corners. Further, the adjacent Si regions share element isolating insulation films, and the adjacent Si regions are separated by one element isolating insulation film. Furthermore, widths of the element isolating insulation films are the same in a chip pattern. When the width of the element isolating insulation film is set to a, and a curvature radius of curved lines at four corners of the Si region is set to r; the width a and the curvature radius r are determined so as to satisfy conditions of r>0.7a in the case where the element isolating insulation films are intersected only in a cross shape, and r>1.5a in the case where the element isolating insulation films include a portion intersected in a T shape.
摘要翻译：在基板上设置有元件隔离绝缘膜的半导体集成电路中，基板中的隔离Si区域由形成四个边的直线和形成四个角的圆弧构成。此外，相邻的Si区域共享元件隔离绝缘膜，并且相邻的Si区域被一个元件隔离绝缘膜隔开。此外，元件隔离绝缘膜的宽度在芯片图案中是相同的。当元件隔离绝缘膜的宽度设定为a，将Si区域的四个角部的曲线的曲率半径设定为r时，在元件隔离绝缘膜仅交叉形状的情况下，宽度a和曲率半径r被确定为满足r> 0.7a的条件，并且在元件隔离绝缘膜包括以T形交叉的部分。

8. 发明授权

US5666009A Wire bonding structure for a semiconductor device 失效
标题翻译：用于半导体器件的引线接合结构
公开(公告)号：US5666009A
公开(公告)日：1997-09-09
申请号：US661144
申请日：1996-06-10
申请人： Hiroshi Kumano , Yasuyuki Higuchi
发明人： Hiroshi Kumano , Yasuyuki Higuchi
IPC分类号： H01L21/60 , H01L23/48 , H01L23/495 , H01L23/52 , H01L29/40
CPC分类号： H01L24/48 , H01L23/4952 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48456 , H01L2224/48472 , H01L2224/48699 , H01L2224/4903 , H01L2224/49051 , H01L2224/49171 , H01L2224/78301 , H01L2224/78313 , H01L2224/85181 , H01L24/45 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01082 , H01L2924/14 , H01L2924/181
摘要： In a transistor of a structure where a bonding pad formed on the surface of a chip and an end portion of a lead terminal are connected by a bonding wire, by forming the bonding pad to be long and narrow so that its length is parallel to a straight line between the bonding pad and the terminal end. The bonding pad and the terminal end are connected along the shortest line The width of the bonding pad is reduced to a minimum.
摘要翻译：在通过接合线将形成在芯片的表面上的接合焊盘与引线端子的端部连接的结构的晶体管中，通过将焊盘形成为长而窄，使其长度平行于焊盘和终端之间的直线。接合焊盘和端子沿着最短的线连接。焊盘的宽度减小到最小。

9. 发明授权

US4387143A Silver oxide primary cell 失效
标题翻译：氧化银原电池
公开(公告)号：US4387143A
公开(公告)日：1983-06-07
申请号：US127518
申请日：1980-03-05
申请人： Tomohiko Arita , Kaoru Murakami , Mitsugu Okahisa , Hiroshi Kumano
发明人： Tomohiko Arita , Kaoru Murakami , Mitsugu Okahisa , Hiroshi Kumano
IPC分类号： H01M4/06 , H01M6/12 , H01M2/26
CPC分类号： H01M6/12
摘要： The disclosure relates to a silver oxide primary cell which includes a casing composed of a positive electrode container and a negative electrode container to define a sealed chamber between them, a positive electrode, an insulating layer, a negative electrode, a separator member, an electrically conductive member, and an insulating gasket housed in the sealed chamber.The electrically conductive member is pressed, at its portion protruding toward peripheral edge portion of the positive electrode, against the bottom face of the positive electrode container by the insulating gasket, and is simultaneously electrically connected to the bottom face or side wall of the positive electrode container.
摘要翻译：本发明涉及一种氧化银原子电池，其包括由正极容器和负极容器组成的壳体，以在其间限定密封室，正极，绝缘层，负极，隔板构件，电导电构件和容纳在密封室中的绝缘垫圈。导电部件在其正极的周边部分突出的部分被绝缘垫片压靠在正极容器的底面上，同时电连接到正极的底面或侧壁容器。

10. 发明授权

US08692315B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08692315B2
公开(公告)日：2014-04-08
申请号：US13403313
申请日：2012-02-23
申请人： Hiroshi Kumano
发明人： Hiroshi Kumano
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L27/092 , H01L21/743 , H01L23/535 , H01L27/0623 , H01L27/1203 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/36 , H01L29/732 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having an active layer in which an element region and a contact region are formed, a support substrate supporting the active layer, and a buried insulation layer interposed between the active layer and the support substrate. A transistor element is formed in the element region, the transistor element having a transistor buried impurity layer formed within the active layer. The semiconductor device further includes a substrate contact having a contact buried impurity layer formed within the contact region and a through contact extending from the surface of the active layer to the support substrate through the contact buried impurity and the buried insulation layer, the contact buried impurity layer being in the same layer as the transistor buried impurity layer.
摘要翻译：半导体器件包括具有其中形成有元件区域和接触区域的有源层的半导体衬底，支撑有源层的支撑衬底以及置于有源层和支撑衬底之间的掩埋绝缘层。晶体管元件形成在元件区域中，晶体管元件具有在有源层内形成的晶体管埋入杂质层。半导体器件还包括具有在接触区域内形成的接触掩埋杂质层的基片接触件和通过接触掩埋杂质和掩埋绝缘层从有源层表面延伸到支撑基板的通孔，接触掩埋杂质层位于与晶体管埋入杂质层相同的层中。

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