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    • 7. 发明申请
    • Solid Electrolytic Capacitor
    • 固体电解电容器
    • US20140268502A1
    • 2014-09-18
    • US14198717
    • 2014-03-06
    • AVX Corporation
    • Martin BilerJan Petrzilek
    • H01G9/052H01G9/032H01G9/00
    • H01G9/052H01G9/0032H01G9/032H01G9/15
    • A capacitor for use in relatively high voltage environments is provided. The solid electrolyte is formed from a plurality of pre-polymerized particles in the form of a dispersion. In addition, the anode is formed such that it contains at least one longitudinally extending channel is recessed therein. The channel may have a relatively high aspect ratio (length divided by width), such as about 2 or more, in some embodiments about 5 or more, in some embodiments from about 10 to about 200, in some embodiments from about 15 to about 150, in some embodiments from about 20 to about 100, and in some embodiments, from about 30 to about 60.
    • 提供了一种在较高电压环境中使用的电容器。 固体电解质由分散体形式的多个预聚合颗粒形成。 此外,阳极形成为使得其包含至少一个纵向延伸的通道凹入其中。 通道可以具有相对高的纵横比(长度除以宽度),例如约2或更大,在一些实施方案中为约5或更多,在一些实施方案中为约10至约200,在一些实施方案中为约15至约150 ,在一些实施方案中为约20至约100,在一些实施方案中为约30至约60。
    • 9. 发明申请
    • TANTALUM CAPACITOR
    • TANTALUM电容
    • US20130063870A1
    • 2013-03-14
    • US13607540
    • 2012-09-07
    • Tai Yon CHO
    • Tai Yon CHO
    • H01G9/045H01G9/032H01G9/00
    • H01G9/012H01G9/042
    • There is provided a tantalum capacitor, including: a chip sintered body formed by sintering a tantalum powder; and an anode lead-out line formed of niobium (Nb) and having an insertion region positioned inside the chip sintered body and a non-insertion region positioned outside of the chip sintered body, and thus, a niobium (Nb) wire is used as the anode lead-out line, thereby enhancing the binding force of the anode lead-out line with the tantalum powder, so that equivalent series resistance (ESR) and leakage current (LC) characteristics may be improved.
    • 提供一种钽电容器,其包括:通过烧结钽粉末形成的芯片烧结体; 以及由铌(Nb)形成的具有位于片状烧结体的内部的插入区域和位于片状烧结体的外侧的非插入区域的阳极引出线,因此使用铌(Nb)线作为 阳极引出线,从而提高阳极引出线与钽粉末的结合力,从而可以提高等效串联电阻(ESR)和漏电流(LC)特性。