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1. 发明申请

US20050089075A1 Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
标题翻译：表面发射半导体激光器及其制造方法以及光学器件
公开(公告)号：US20050089075A1
公开(公告)日：2005-04-28
申请号：US10977197
申请日：2004-10-28
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01S5/18 , H01S5/183 , H01S5/187 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器（VCSEL），以及包括具有该表面发射半导体激光器的光源装置的光学装置。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

2. 发明授权

US07489717B2 Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
标题翻译：表面发射半导体激光器及其制造方法以及光学器件
公开(公告)号：US07489717B2
公开(公告)日：2009-02-10
申请号：US10977197
申请日：2004-10-28
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器（VCSEL），以及包括具有该表面发射半导体激光器的光源装置的光学装置。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

3. 发明申请

US20070202622A1 METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER 有权
标题翻译：用于制造表面发射半导体激光的方法
公开(公告)号：US20070202622A1
公开(公告)日：2007-08-30
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

4. 发明授权

US07678598B2 Method for manufacturing surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器的制造方法
公开(公告)号：US07678598B2
公开(公告)日：2010-03-16
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

5. 发明授权

US5914839A MR Device with anti-ferro magnetic field anti-parallel to sense current magnetic field 失效
标题翻译： MR器件具有反铁磁反平行感应电流磁场
公开(公告)号：US5914839A
公开(公告)日：1999-06-22
申请号：US899862
申请日：1997-07-24
申请人： Atsushi Matsuzono , Satoshi Sasaki
发明人： Atsushi Matsuzono , Satoshi Sasaki
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3929 , G11B5/3932 , H01F10/3268 , H01L43/08 , G11B2005/3996
摘要： A magneto-resistance effect device having improved sensitivity in which an effective anisotropic magnetic field operating on a magneto-resistance effect layer is not increased by the sense current magnetic field. The device includes a magnetic field detection unit having a magneto-resistance effect film exhibiting a magneto-resistance effect. The magnetic field detection unit is fed with a sense current in a direction substantially parallel to an external magnetic field. The device also includes an anti-ferromagnetic film arranged neighboring to the magneto-resistance effect film of the magnetic field detection unit. The direction of a magnetic field emanating from the anti-ferromagnetic film is substantially anti-parallel to the direction of a sense current magnetic field generated by the sense current and impressed on the magneto-resistance effect film of the magnetic field detection unit.
摘要翻译：具有提高灵敏度的磁阻效应器件，其中在磁阻效应层上运行的有效各向异性磁场不会被感测电流磁场增加。该装置包括具有显示磁阻效应的磁阻效应膜的磁场检测单元。磁场检测单元以基本上平行于外部磁场的方向馈送感测电流。该装置还包括与磁场检测单元的磁阻效应膜相邻布置的反铁磁膜。从反铁磁膜发出的磁场的方向基本上与由感测电流产生的感应电流磁场的方向平行，并且施加在磁场检测单元的磁阻效应膜上。

6. 发明授权

US09056267B2 Filtration device 有权
标题翻译：过滤装置
公开(公告)号：US09056267B2
公开(公告)日：2015-06-16
申请号：US14122682
申请日：2012-05-30
申请人： Tsutomu Sasaki , Satoshi Sasaki
发明人： Tsutomu Sasaki , Satoshi Sasaki
IPC分类号： B01D29/60 , B01D29/66 , B01D29/52 , C02F1/00
CPC分类号： B01D29/668 , B01D29/52 , B01D29/60 , C02F1/001 , C02F2201/005 , C02F2201/007 , C02F2303/16
摘要： A filtration device with filters that can be backwashed with purified water switches between water purification, first backwashing, and second backwashing modes, depending on a pivot position of a valve. During the first backwashing mode, while a tap water inlet is in communication with a second tap water passage port, first and second purified water passage ports are blocked from communication with a purified water outlet, so purified water from a second filter flows backward through a first filter and is discharged from a drain water outlet. During the second backwashing mode, while the tap water inlet is in communication with a first tap water passage port, first and second purified water passage ports are blocked from communication with the purified water outlet, so purified water from the first filter flows backward through the second filter and is discharged from the drain water outlet.
摘要翻译：具有过滤器的过滤装置，其可以根据阀的枢转位置在净水，第一反洗和第二反冲洗模式之间用净化水进行反冲洗。在第一回洗模式期间，当自来水入口与第二自来水通道连通时，第一和第二净化水通道端口与净化水出口被阻止连通，所以来自第二过滤器的净化水通过第一过滤器，并从排水出口排出。在第二回洗模式期间，当自来水入口与第一自来水通道连通时，第一和第二净化水通道被阻止与净化水出口相通，所以来自第一过滤器的净化水向后流过第二过滤器，并从排水出口排出。

7. 发明申请

US20140110330A1 FILTRATION DEVICE 有权
标题翻译：过滤装置
公开(公告)号：US20140110330A1
公开(公告)日：2014-04-24
申请号：US14122682
申请日：2012-05-30
申请人： Tsutomu Sasaki , Satoshi Sasaki
发明人： Tsutomu Sasaki , Satoshi Sasaki
IPC分类号： B01D29/66 , B01D29/60 , B01D29/52
CPC分类号： B01D29/668 , B01D29/52 , B01D29/60 , C02F1/001 , C02F2201/005 , C02F2201/007 , C02F2303/16
摘要： Provided is a filtration device with a plurality of filters that can be backwashed with purified water with a simple operation. The filtration device 1 switches between a water purification mode, a first backwashing mode, and a second backwashing mode, depending on a pivot position of a valve 6. During the first backwashing mode, while a tap water inlet 51 is in communication with a second tap water passage port 53, first and second purified water passage ports 54, 55 are blocked from communication with a purified water outlet 56, so that purified water from a second filter 3 flows backward through a first filter 2 and is discharged as drain water from a drain water outlet 57. During the second backwashing mode, while the tap water inlet 51 is in communication with a first tap water passage port 52, first and second purified water passage ports 53, 54 are blocked from communication with the purified water outlet 56, so that purified water from the first filter 2 flows backward through the second filter 3 and is discharged as drain water from the drain water outlet 57.
摘要翻译：提供了具有多个过滤器的过滤装置，其可以用简单的操作用净化水进行反冲洗。过滤装置1根据阀6的枢转位置在水净化模式，第一回洗模式和第二回洗模式之间切换。在第一回洗模式期间，当自来水入口51与第二反洗自来水通道端口53，第一和第二净化水通道端口54,55与净化水出口56阻止连通，使得来自第二过滤器3的净化水通过第一过滤器2向后流动，并作为排水从第排水口57.在第二回洗模式期间，当自来水入口51与第一自来水通道端口52连通时，第一和第二净化水通道端口53,54被阻止与净化水出口56连通，使得来自第一过滤器2的净化水向后流过第二过滤器3，并且作为排水从排水出口57排出。

8. 发明授权

US08486965B2 Pyrrolo[2,3-b]pyridine derivative and use thereof for treatment of cancer 有权
标题翻译：吡咯并[2,3-b]吡啶衍生物及其用于治疗癌症的用途
公开(公告)号：US08486965B2
公开(公告)日：2013-07-16
申请号：US13391217
申请日：2010-08-25
申请人： Tomohiro Ohashi , Zenyu Shiokawa , Yuta Tanaka , Satoshi Sasaki
发明人： Tomohiro Ohashi , Zenyu Shiokawa , Yuta Tanaka , Satoshi Sasaki
IPC分类号： A61K31/44
CPC分类号： C07D471/04 , C07D401/12 , C07D409/12 , C07D409/14 , C07D487/04 , C07D495/04
摘要： The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof.Specially, the present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or salt thereof, and a medicament containing the compound or a prodrug thereof, which is an Smo inhibitor or an agent for the prophylaxis or treatment of cancer.
摘要翻译：本发明提供具有强Smo抑制活性的稠合杂环衍生物及其应用。特别地，本发明涉及由下式表示的化合物，其中每个符号如说明书中所定义，或其盐，以及含有该化合物或其前体药物的药物，其为Smo抑制剂或预防或治疗癌症。

9. 外观设计

USD668152S1 Actuator for an aerosol spray bottle 有权
标题翻译：气雾剂喷雾瓶执行机构
公开(公告)号：USD668152S1
公开(公告)日：2012-10-02
申请号：US29402315
申请日：2011-09-22
申请人： Satoshi Sasaki
设计人： Satoshi Sasaki

10. 发明申请

US20110077938A1 DATA REPRODUCTION METHOD AND DATA REPRODUCTION APPARATUS 审中-公开
标题翻译：数据再现方法和数据复制装置
公开(公告)号：US20110077938A1
公开(公告)日：2011-03-31
申请号：US12962337
申请日：2010-12-07
申请人： Atsutoshi Naraki , Yuuichirou Nakamura , Kaori Tajima , Satoshi Sasaki , Katsuhiro Okawara , Hiroshi Kamiki
发明人： Atsutoshi Naraki , Yuuichirou Nakamura , Kaori Tajima , Satoshi Sasaki , Katsuhiro Okawara , Hiroshi Kamiki
IPC分类号： G10L19/00
CPC分类号： G11B27/005 , G10L19/00 , G11B20/10527 , G11B2020/00057 , G11B2020/10546 , G11B2020/10944 , G11B2020/10972 , G11B2020/1288 , G11B2220/2562
摘要： A reproduction apparatus that reproduces compressed audio data recorded in a recording medium inserts dummy data between data to be concatenated and reproduces the data when performing a specific reproduction of the data obtained by concatenating data which are discontinuously read from the recording medium.
摘要翻译：再现记录在记录介质中的压缩音频数据的再现装置，在要连接的数据之间插入伪数据，并在对从记录介质中不连续地读取的数据进行连接而获得的数据进行特定再现时再现数据。

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