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1. 发明申请

US20050089075A1 Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
标题翻译：表面发射半导体激光器及其制造方法以及光学器件
公开(公告)号：US20050089075A1
公开(公告)日：2005-04-28
申请号：US10977197
申请日：2004-10-28
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01S5/18 , H01S5/183 , H01S5/187 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器（VCSEL），以及包括具有该表面发射半导体激光器的光源装置的光学装置。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

2. 发明授权

US06754055B2 GIANT MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SMALL LEAKAGE CURRENT, MAGNETO-RESISTIVE EFFECTIVE TYPE HEAD HAVING SMALL-LEAKAGE CURRENT, THIN-FILM MAGNETIC MEMORY HAVING SMALL LEAKAGE CURRENT AND THIN-FILM MAGNETIC SENSOR HAVING SMALL LEAKAGE CURRENT 失效
标题翻译：具有小漏电流的大电磁效应元件，具有小漏电流的磁阻效应型头，具有小漏电流的薄膜磁性存储器和具有小漏电流的薄膜磁传感器
公开(公告)号：US06754055B2
公开(公告)日：2004-06-22
申请号：US10093338
申请日：2002-03-07
申请人： Hiroaki Ono , Atsushi Matsuzono , Shoji Terada , Shigehisa Ohkawara , Eiji Makino
发明人： Hiroaki Ono , Atsushi Matsuzono , Shoji Terada , Shigehisa Ohkawara , Eiji Makino
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/40 , G11B2005/3996 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A giant magneto-resistive effect element includes a laminated layer film having a ferromagnetic film, a non-magnetic film and an anti-ferromagnetic film. A current is caused to flow in the direction perpendicular to the film plane of the laminated layer film by upper and lower electrodes. Hard magnetic films are directly connected to both sides in the width direction of the laminated layer film. Insulating films are formed above or under the hard magnetic films. A current path between the upper electrodes or the lower electrodes and the laminated layer film is restricted by an opening defined between the insulating layers at both sides. The hard magnetic films have a specific resistance substantially the same as or larger than that of the laminated layer film. Further, there are provided a magneto-resistive effect type head, a thin-film magnetic memory and a thin-film magnetic sensor including the above-mentioned giant magneto-resistive effect element.
摘要翻译：巨磁电效应元件包括具有铁磁膜，非磁性膜和抗铁磁性膜的叠层膜。通过上下电极使电流沿与层叠层膜的膜平面垂直的方向流动。硬磁性膜直接连接到叠层薄膜的宽度方向的两侧。绝缘膜形成在硬磁性膜的上方或下方。上部电极或下部电极与叠层膜之间的电流路径被限定在两侧的绝缘层之间的开口限制。硬磁性膜的电阻率与层叠膜的电阻基本相同或者更大。此外，提供了包括上述巨磁电效应元件的磁阻效应型磁头，薄膜磁存储器和薄膜磁传感器。

3. 发明授权

US5822158A Giant magnetoresistance effect device with magnetically sensitive portion of a size large than playback track width 失效
标题翻译：具有大于播放轨迹宽度的大小的磁敏部分的巨磁阻效应器件
公开(公告)号：US5822158A
公开(公告)日：1998-10-13
申请号：US824307
申请日：1997-03-26
申请人： Atsushi Matsuzono
发明人： Atsushi Matsuzono
IPC分类号： G11B5/39 , H01F10/08 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A longitudinal type magnetoresistance effect device employed in a thin-film magnetic head enclosed within a high-density magnetic recording device or in a high-sensitivity magnetic sensor, in which the rate of change in resistance dependent on the sense current density may be prevented from being lowered and in which high magnetic field sensitivity may be realized even in the high sense current density area. The sense current flows in the device in a direction at right angles to the plane of the magnetic recording medium. At least two or more layers of the soft magnetic layers and the non-magnetic electrically conductive layers are stacked in multiple layers and has a broad width portion in an area which proves to be a current route for the sense current.
摘要翻译：封装在高密度磁记录装置或高灵敏度磁传感器中的薄膜磁头中使用的纵向型磁阻效应装置，其中可以防止取决于感测电流密度的电阻变化率即使在高感测电流密度区域中也可以实现高磁场灵敏度。感测电流在与磁记录介质的平面成直角的方向上在装置中流动。至少两层或更多层的软磁性层和非磁性导电层以多层堆叠并且在被证明是感测电流的电流路径的区域中具有宽的宽度部分。

4. 发明授权

US5274520A Thin film magnetic head 失效
标题翻译：薄膜磁头
公开(公告)号：US5274520A
公开(公告)日：1993-12-28
申请号：US758758
申请日：1991-09-12
申请人： Atsushi Matsuzono , Teiichi Miyauchi
发明人： Atsushi Matsuzono , Teiichi Miyauchi
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3925 , G11B5/3903 , G11B5/3967 , G11B5/3163 , G11B5/3183
摘要： A thin film magnetic head comprises a thin film magnetic core provided with a magnetic head gap, forming part of a first closed magnetic path and extended substantially in parallel to an air bearing surface to be disposed opposite to the surface of a magnetic recording medium, a head coil magnetically coupled with the first closed magnetic path, and a magnetoresistance-effect element forming a second closed magnetic path magnetically coupled with a portion of the first closed magnetic path including the magnetic head gap. The thin film magnetic head is provided with auxiliary magnetic head gaps respectively in portions of the first closed magnetic path other than the portion including the magnetic head gap. The portions of the first closed magnetic path provided with the auxiliary magnetic head gaps have comparatively high magnetic resistances, so that the distribution of magnetic flux to the magnetoresistance-effect element can be regulated to improve the reproducing efficiency of the magnetoresistance-effect element.

5. 发明授权

US07678598B2 Method for manufacturing surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器的制造方法
公开(公告)号：US07678598B2
公开(公告)日：2010-03-16
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

6. 发明授权

US06714390B2 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor 失效
标题翻译：巨磁阻效应元件，磁阻效应型头，薄膜磁记忆体和薄膜磁传感器
公开(公告)号：US06714390B2
公开(公告)日：2004-03-30
申请号：US10120741
申请日：2002-04-11
申请人： Shoji Terada , Atsushi Matsuzono , Hiroaki Ono
发明人： Shoji Terada , Atsushi Matsuzono , Hiroaki Ono
IPC分类号： G11B539
CPC分类号： H01L27/224 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/08 , Y10T428/1121 , Y10T428/1171
摘要： A giant magneto-resistive effect element (1) comprises a lamination layer film (2) including a ferromagnetic film and wherein a nonmagnetic film and an antiferromagnetic film, the ferromagnetic film includes a magnetization free layer (13) and a magnetization fixed layer, a current is restricted by an upper electrode and a lower electrode in such a manner that the current may flow in the direction perpendicular to the film plane of the lamination layer film (2), the lamination layer film (2) is laminated including a high-resistance layer (21), a hard magnetic film (3) made of a conductive hard magnetic material and an insulating layer (4) are directly bonded to respective outsides of this lamination layer film (2) along its width direction and this hard magnetic film (3) is shifted from the high-resistance layer (21) and bonded near the magnetization free layer (13). A magneto-resistive effect type head, a thin-film magnetic memory and a thin-film magnetic sensor include the giant magneto-resistive effect element (1). The giant magneto-resistive effect element can obtain a high output, a high resistance and is able to cope with high recording density. Also, the magneto-resistive effect head, the thin-film magnetic memory and the thin-film magnetic sensor may include this giant magneto-resistive effect element.
摘要翻译：巨磁电效应元件（1）包括包含铁磁膜的叠层膜（2），其中非磁性膜和反铁磁膜，铁磁膜包括无磁化层（13）和磁化固定层，电流受到上电极和下电极的限制，使得电流可以在垂直于层压层膜（2）的膜平面的方向上流动，层压层膜（2）电阻层（21），由导电硬磁性材料制成的硬磁性膜（3）和绝缘层（4）沿其宽度方向直接接合到该叠层膜（2）的外侧，并且该硬磁性膜（3）从高电阻层（21）移位并粘接在磁化自由层（13）附近。磁阻效应型头，薄膜磁存储器和薄膜磁传感器包括巨磁阻效应元件（1）。巨大的磁阻效应元件可以获得高输出，高电阻并且能够应付高记录密度。此外，磁阻效应头，薄膜磁存储器和薄膜磁传感器可以包括这个巨大的磁阻效应元件。

7. 发明授权

US6101067A Thin film magnetic head with a particularly shaped magnetic pole piece and spaced relative to an MR element 失效
标题翻译：具有特殊形状磁极片并相对于MR元件隔开的薄膜磁头
公开(公告)号：US6101067A
公开(公告)日：2000-08-08
申请号：US760725
申请日：1996-12-05
申请人： Atsushi Matsuzono , Hiroshi Takino
发明人： Atsushi Matsuzono , Hiroshi Takino
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/3919 , G11B5/3903 , G11B5/3967 , G11B5/1278
摘要： A thin film magnetic head has a main magnetic pole piece, a magnetoresistance effect element, a bias layer giving a bias magnetic field to the magnetoresistance effect element, an auxiliary magnetic pole piece and an insulating layer leaving a space between the main magnetic pole piece and the auxiliary magnetic pole piece, the main magnetic pole piece is almost disposed in parallel with the magnetoresistance effect element, a distance between the main magnetic pole piece and the magnetoresistance effect element is selected from 1 nm to 1 .mu.m.
摘要翻译：薄膜磁头具有主磁极片，磁阻效应元件，向磁阻效应元件施加偏置磁场的偏置层，辅助磁极片和绝缘层，其在主磁极片和辅助磁极片，主磁极片几乎与磁阻效应元件平行设置，主磁极片和磁阻效应元件之间的距离选择为1nm至1μm。

8. 发明授权

US5914839A MR Device with anti-ferro magnetic field anti-parallel to sense current magnetic field 失效
标题翻译： MR器件具有反铁磁反平行感应电流磁场
公开(公告)号：US5914839A
公开(公告)日：1999-06-22
申请号：US899862
申请日：1997-07-24
申请人： Atsushi Matsuzono , Satoshi Sasaki
发明人： Atsushi Matsuzono , Satoshi Sasaki
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3929 , G11B5/3932 , H01F10/3268 , H01L43/08 , G11B2005/3996
摘要： A magneto-resistance effect device having improved sensitivity in which an effective anisotropic magnetic field operating on a magneto-resistance effect layer is not increased by the sense current magnetic field. The device includes a magnetic field detection unit having a magneto-resistance effect film exhibiting a magneto-resistance effect. The magnetic field detection unit is fed with a sense current in a direction substantially parallel to an external magnetic field. The device also includes an anti-ferromagnetic film arranged neighboring to the magneto-resistance effect film of the magnetic field detection unit. The direction of a magnetic field emanating from the anti-ferromagnetic film is substantially anti-parallel to the direction of a sense current magnetic field generated by the sense current and impressed on the magneto-resistance effect film of the magnetic field detection unit.
摘要翻译：具有提高灵敏度的磁阻效应器件，其中在磁阻效应层上运行的有效各向异性磁场不会被感测电流磁场增加。该装置包括具有显示磁阻效应的磁阻效应膜的磁场检测单元。磁场检测单元以基本上平行于外部磁场的方向馈送感测电流。该装置还包括与磁场检测单元的磁阻效应膜相邻布置的反铁磁膜。从反铁磁膜发出的磁场的方向基本上与由感测电流产生的感应电流磁场的方向平行，并且施加在磁场检测单元的磁阻效应膜上。

9. 发明授权

US07489717B2 Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
标题翻译：表面发射半导体激光器及其制造方法以及光学器件
公开(公告)号：US07489717B2
公开(公告)日：2009-02-10
申请号：US10977197
申请日：2004-10-28
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器（VCSEL），以及包括具有该表面发射半导体激光器的光源装置的光学装置。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

10. 发明申请

US20070202622A1 METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER 有权
标题翻译：用于制造表面发射半导体激光的方法
公开(公告)号：US20070202622A1
公开(公告)日：2007-08-30
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

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