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1. 发明授权

US08808973B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08808973B2
公开(公告)日：2014-08-19
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

2. 发明授权

US09073284B2 Method of forming pattern and laminate 有权
标题翻译：形成图案和层压板的方法
公开(公告)号：US09073284B2
公开(公告)日：2015-07-07
申请号：US13626415
申请日：2012-09-25
申请人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
发明人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
IPC分类号： B32B7/04 , B82Y30/00 , G03F7/004 , G03F7/20 , G03F7/075 , G03F7/11 , G03F7/16 , G03F7/40
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.
摘要翻译：根据一个实施方案，提供了形成图案的方法，包括在基材上形成包含热交联性分子的热交联性分子层，在热交联性分子层上形成包含感光性组合物的感光性组合物层，化学结合热交联性分子通过加热，用能量射线选择性地照射感光性组合物层，在感光性组合物层上形成包含嵌段共聚物的嵌段共聚物层，在嵌段共聚物层中形成微相分离结构。

3. 发明申请

US20120214094A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20120214094A1
公开(公告)日：2012-08-23
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/20 , H01L21/302 , G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

4. 发明申请

US20060115990A1 Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法，下层膜形成组合物和半导体器件的制造方法
公开(公告)号：US20060115990A1
公开(公告)日：2006-06-01
申请号：US11270621
申请日：2005-11-10
申请人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
发明人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337
摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.
摘要翻译：根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜，下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到下层膜形成下层膜图案。

5. 发明申请

US20100143849A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20100143849A1
公开(公告)日：2010-06-10
申请号：US12631463
申请日：2009-12-04
申请人： Tatsuhiko Ema , Yuriko Seino , Shinichi Ito , Hirokazu Kato
发明人： Tatsuhiko Ema , Yuriko Seino , Shinichi Ito , Hirokazu Kato
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/11
摘要： A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer.
摘要翻译：半导体器件制造方法包括：在半导体晶片上形成基底膜; 在形成基础膜之后，形成半导体晶片的反应层和其间的基础膜; 去除基底膜并将反应层留在半导体晶片上; 在反应层上形成抗蚀膜; 图案化抗蚀剂膜; 并使用图案化的抗蚀剂膜作为掩模对半导体晶片进行处理。

6. 发明申请

US20080248431A1 PATTERN FORMING METHOD USED IN SEMICONDUCTOR DEVICE MANUFACTURING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件制造中使用的图案形成方法和制造半导体器件的方法
公开(公告)号：US20080248431A1
公开(公告)日：2008-10-09
申请号：US11944170
申请日：2007-11-21
申请人： Yuriko Seino , Seiro Myoshi , Kazutaka Ishigo
发明人： Yuriko Seino , Seiro Myoshi , Kazutaka Ishigo
IPC分类号： G03F7/20
CPC分类号： H01L21/0271 , G03F7/091
摘要： A pattern forming method includes forming a first anti-reflection coating on a substrate, the substrate having an uneven surface; forming a second anti-reflection coating on the first anti-reflection coating, the first anti-reflection coating having an uneven surface, and the second anti-reflection coating planarizing the uneven surface of the first anti-reflection coating; forming an intermediate layer film on the second anti-reflection coating; forming a resist film on the intermediate-layer film; patterning the resist film to form a resist pattern; forming an intermediate-layer pattern by etching the intermediate-layer film using the resist pattern as a mask; and forming an under-layer pattern by etching the first and second anti-reflection coatings using the intermediate-layer pattern as a mask.
摘要翻译：图案形成方法包括在基板上形成第一抗反射涂层，所述基板具有不平坦的表面; 在所述第一防反射涂层上形成第二防反射涂层，所述第一防反射涂层具有不平坦表面，所述第二防反射涂层对所述第一防反射涂层的凹凸表面进行平坦化; 在第二防反射涂层上形成中间层膜; 在中间膜上形成抗蚀膜; 图案化抗蚀剂膜以形成抗蚀剂图案; 通过使用抗蚀剂图案作为掩模蚀刻中间层膜来形成中间层图案; 以及通过使用中间层图案作为掩模蚀刻第一和第二防反射涂层来形成底层图案。

7. 发明授权

US08703407B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US08703407B2
公开(公告)日：2014-04-22
申请号：US13188027
申请日：2011-07-21
申请人： Yuriko Seino , Yukiko Kikuchi
发明人： Yuriko Seino , Yukiko Kikuchi
IPC分类号： G03F7/20
CPC分类号： G03F7/165 , G03F7/0755 , G03F7/265
摘要： According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment.
摘要翻译：根据一个实施例，图案形成方法包括：通过曝光将光掩模的图案转印到下层材料上来改变下层材料的表面能来形成第一引导件，并且通过改变下层材料的表面能来形成第二引导件通过衍射从曝光产生的曝光光在第一引导件之间; 将含有多种类型的聚合物嵌段链的嵌段共聚物施加到下层材料上; 并且通过热处理使嵌段共聚物进行微相分离，使聚合物嵌段链中的任何一个根据第一和第二引导物形成图案。

8. 发明申请

US20120241409A1 PATTERN FORMATION METHOD 审中-公开
标题翻译：模式形成方法
公开(公告)号：US20120241409A1
公开(公告)日：2012-09-27
申请号：US13412913
申请日：2012-03-06
申请人： Katsutoshi KOBAYASHI , Yoshihisa Kawamura , Yuriko Seino
发明人： Katsutoshi KOBAYASHI , Yoshihisa Kawamura , Yuriko Seino
IPC分类号： B05D3/10 , B05D3/02
CPC分类号： H01L51/003
摘要： In accordance with an embodiment, a pattern formation method includes: forming, on a first substrate, a fabrication target film having first and second regions; selectively applying, onto the first region a self-assembly material of a plurality of components that are phase-separable by a thermal treatment; baking the self-assembly material to phase-separate the self-assembly material into the components; removing any one of the components to form a first pattern; applying a curable resin onto the second region of the fabrication target film; bringing a dented second substrate corresponding to an arbitrary pattern closer to and into contact with the curable resin so that the second substrate faces the curable resin; curing the curable resin; detaching the second substrate from the curable resin to form a second pattern in the curable resin; and using the first and the second patterns as masks to fabricate the fabrication target film.
摘要翻译：根据实施例，图案形成方法包括：在第一基板上形成具有第一和第二区域的制造靶膜; 在所述第一区域上选择性地将通过热处理可相分离的多个部件的自组装材料施加; 烘烤自组装材料以将自组装材料相分离成部件; 去除任何一个部件以形成第一图案; 将可固化树脂施加到制造目标膜的第二区域上; 使与第二基板相对应的任意图案的凹陷的第二基板与可固化树脂接近并与其接触，使得第二基板面向可固化树脂; 固化可固化树脂; 将第二基板从可固化树脂分离以在可固化树脂中形成第二图案; 并且使用第一和第二图案作为掩模来制造制造目标膜。

9. 发明授权

US07300884B2 Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法，下层膜形成组合物和半导体器件的制造方法
公开(公告)号：US07300884B2
公开(公告)日：2007-11-27
申请号：US11270621
申请日：2005-11-10
申请人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
发明人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337
摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.
摘要翻译：根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜，下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到下层膜形成下层膜图案。

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