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1. 发明授权

US08808973B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08808973B2
公开(公告)日：2014-08-19
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

2. 发明授权

US08173061B2 Pattern transfer method 失效
标题翻译：模式转移方式
公开(公告)号：US08173061B2
公开(公告)日：2012-05-08
申请号：US12730649
申请日：2010-03-24
申请人： Masahiro Kanno
发明人： Masahiro Kanno
IPC分类号： B29C43/36
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A pattern transfer method for filling a surface on a template having a concave-convex pattern with a resist material has contacting the template with the resist material applied on a substrate, curing the resist material while contacting the template with the resist, electrically charging the template and the resist with an identical polarity, and removing the template from the resist material while eclectically charging the template and the resist with an identical polarity.
摘要翻译：使用抗蚀剂材料填充具有凹凸图案的模板上的表面的图案转印方法使模板与施加在基板上的抗蚀剂材料接触，使抗蚀剂材料固化，同时使模板与抗蚀剂接触，对模板进行充电和具有相同极性的抗蚀剂，并且在以相同的极性对模板和抗蚀剂进行电荷充电的同时从抗蚀剂材料中除去模板。

3. 发明授权

US07883824B2 Method for evaluating lithography apparatus and method for controlling lithography apparatus 失效
标题翻译：评估光刻设备的方法和控制光刻设备的方法
公开(公告)号：US07883824B2
公开(公告)日：2011-02-08
申请号：US12405710
申请日：2009-03-17
申请人： Masafumi Asano , Kenji Yoshida , Masahiro Kanno
发明人： Masafumi Asano , Kenji Yoshida , Masahiro Kanno
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70641 , G03F7/70625
摘要： An evaluation method for lithography apparatus including a coating unit, an exposure unit, a heating unit and a development unit, the evaluation method including forming an evaluation resist pattern by using the lithography apparatus, the evaluation resist pattern including first and second evaluation patterns, the first and second evaluation patterns having different peripheral environments, measuring dimensions of the first and second evaluation patterns to obtain a dimensional difference between the first and second resist evaluation patterns, estimating an exposure dose of a resist when the resist is exposed by the exposure unit, the estimating the exposure dose being performed based on the dimensional difference between the first and second resist evaluation patterns, and estimating an effective heating temperature of the resist when the resist is heated by the heating unit, the estimating the effective heating temperature being performed based on the estimated exposure dose and the dimensional difference.
摘要翻译：一种包括涂布单元，曝光单元，加热单元和显影单元的光刻设备的评估方法，所述评估方法包括通过使用光刻设备形成评估抗蚀剂图案，所述评估抗蚀剂图案包括第一和第二评估图案，第一和第二评估图案具有不同的外围环境，测量第一和第二评估图案的尺寸以获得第一和第二抗蚀剂评估图案之间的尺寸差异，当抗蚀剂被曝光单元曝光时估计抗蚀剂的曝光剂量，基于第一和第二抗蚀剂评估图案之间的尺寸差来估计正在进行的曝光剂量，以及当加热单元加热抗蚀剂时估计抗蚀剂的有效加热温度，基于估计暴露剂量和t 他的尺寸差异。

4. 发明申请

US20070212801A1 System for adjusting manufacturing equipment, method for adjusting manufacturing equipment, and method for manufacturing semiconductor device 审中-公开
标题翻译：用于调整制造设备的系统，用于调整制造设备的方法以及制造半导体器件的方法
公开(公告)号：US20070212801A1
公开(公告)日：2007-09-13
申请号：US11708344
申请日：2007-02-21
申请人： Masahiro Kanno , Masafumi Asano
发明人： Masahiro Kanno , Masafumi Asano
IPC分类号： H01L21/66 , G06F19/00
CPC分类号： G03F7/70616 , G03F7/16 , G03F7/30 , G03F7/705 , G03F7/70525 , G03F7/70566
摘要： A system for adjusting a manufacturing equipment includes a measurement equipment configured to measure a plurality of sizes of portions of a product on a plane, an approximation module configured to approximate a planar distribution of the plurality of sizes by an orthogonal polynomial. as a function of coordinates on the plane, an association module configured to associate a plurality of terms in the orthogonal polynomial with a plurality of equipment parameters of the manufacturing equipment, respectively, the manufacturing equipment manufacturing the product, and an adjusting module configured to adjust the plurality of equipment parameters to reduce a plurality of distribution components, the plurality of distribution components composing the planar distribution approximated by the orthogonal polynomial.
摘要翻译：一种用于调整制造设备的系统包括被配置为测量平面上的乘积的多个尺寸的测量设备，近似模块被配置为通过正交多项式来近似多个尺寸的平面分布。作为所述平面上的坐标的函数，关联模块被配置为将所述正交多项式中的多个项分别与所述制造设备的多个设备参数相关联，所述制造设备制造所述产品，以及调整模块，被配置为调整多个设备参数以减少多个分配组件，所述多个分布组件构成由正交多项式近似的平面分布。

5. 发明授权

US06620334B2 Etching apparatus and etching method 失效
公开(公告)号：US06620334B2
公开(公告)日：2003-09-16
申请号：US10106369
申请日：2002-03-27
申请人： Masahiro Kanno
发明人： Masahiro Kanno
IPC分类号： B44C122
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/3266
摘要： An etching apparatus has (a) a processing unit to ionize a reactive gas and generate plasma to process a semiconductor wafer, (b) a bed on which the semiconductor wafer is set, (c) a first magnet arranged below the semiconductor wafer in the vicinity of the periphery of a semiconductor chip forming area defined on the semiconductor wafer, and (d) a second magnet arranged above the semiconductor wafer in the vicinity of the periphery of the semiconductor chip forming area.

6. 发明申请

US20120214094A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20120214094A1
公开(公告)日：2012-08-23
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/20 , H01L21/302 , G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

7. 发明申请

US20110111593A1 PATTERN FORMATION METHOD, PATTERN FORMATION SYSTEM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：图案形成方法，图案形成系统和制造半导体器件的方法
公开(公告)号：US20110111593A1
公开(公告)日：2011-05-12
申请号：US12884796
申请日：2010-09-17
申请人： Masahiro KANNO
发明人： Masahiro KANNO
IPC分类号： H01L21/302 , H01L21/308
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern formation method is disclosed. The method can form a patterning film on a substrate. The method can transfer a form pattern provided on a template onto an imprint material by bringing the template into contact with the imprint material. The imprint material is coated on the patterning film. In addition, the method can perform patterning including etching the patterning film using the imprint material including the transferred form pattern as a mask. The transferring is implemented using a condition determined based on data relating to at least one selected from a dimension and a shape of a pattern of the patterning film after the patterning.
摘要翻译：根据一个实施例，公开了图案形成方法。该方法可以在基板上形成图案化膜。该方法可以通过使模板与压印材料接触来将模板上提供的模板图案转印到压印材料上。压印材料涂覆在图案化膜上。此外，该方法可以执行图案化，包括使用包括转印的形式图案的印模材料作为掩模蚀刻图案形成膜。使用基于与在图案化之后从图案形成膜的图案的尺寸和形状中选择的至少一种相关的数据确定的条件来实现转印。

8. 发明授权

US5654749A Image display apparatus 失效
标题翻译：图像显示装置
公开(公告)号：US5654749A
公开(公告)日：1997-08-05
申请号：US142133
申请日：1993-10-28
申请人： Masahiro Kanno
发明人： Masahiro Kanno
IPC分类号： H04N13/00 , H04N13/02 , H04N17/18
CPC分类号： H04N13/0422 , H04N13/0438 , H04N13/0497
摘要： An image display apparatus is disclosed which alternately displays an image for the right eye and an image for the left eye on a two-dimensional display and provides a stereoscopic image. A three-dimensional image unit outputs a signal with a shutter control signal superposed on a synchronizing signal or a video signal to a display unit. The display unit provided with an infrared ray transmitting device mounted on the front face thereof separates the shutter control signal from the superposed signal received from the three-dimensional image unit. It alternately displays the image for the right eye and the image for the left eye. The infrared ray transmitting device transmits the shutter control signal. A liquid crystal shutter for the right eye image and a liquid crystal shutter for the left eye image of a liquid crystal shuttered spectacle device are opened and shut in accordance with the shutter control signal.
摘要翻译：公开了一种图像显示装置，其在二维显示器上交替地显示用于右眼的图像和用于左眼的图像，并提供立体图像。三维图像单元将叠加有同步信号或视频信号的快门控制信号的信号输出到显示单元。设置有安装在其正面上的红外线传输装置的显示单元将快门控制信号与从三维图像单元接收的叠加信号分离。它交替显示右眼的图像和左眼的图像。红外线发射装置发送快门控制信号。根据快门控制信号，打开和关闭用于右眼图像的液晶快门和用于液晶遮光眼镜装置的左眼图像的液晶快门。

9. 发明申请

US20100270711A1 PATTERN TRANSFER METHOD 失效
标题翻译：图案转移方法
公开(公告)号：US20100270711A1
公开(公告)日：2010-10-28
申请号：US12730649
申请日：2010-03-24
申请人： Masahiro KANNO
发明人： Masahiro KANNO
IPC分类号： B28B1/14 , B29C35/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A pattern transfer method for filling a surface on a template having a concave-convex pattern with a resist material has contacting the template with the resist material applied on a substrate, curing the resist material while contacting the template with the resist, electrically charging the template and the resist with an identical polarity, and removing the template from the resist material while eclectically charging the template and the resist with an identical polarity.
摘要翻译：使用抗蚀剂材料填充具有凹凸图案的模板上的表面的图案转印方法使模板与施加在基板上的抗蚀剂材料接触，使抗蚀剂材料固化，同时使模板与抗蚀剂接触，对模板进行充电和具有相同极性的抗蚀剂，并且在以相同的极性对模板和抗蚀剂进行电荷充电的同时从抗蚀剂材料中除去模板。

10. 发明申请

US20050079428A1 Method for manufacturing semiconductor device and exposure system 失效
标题翻译：制造半导体器件和曝光系统的方法
公开(公告)号：US20050079428A1
公开(公告)日：2005-04-14
申请号：US10932077
申请日：2004-09-02
申请人： Masahiro Kanno
发明人： Masahiro Kanno
IPC分类号： G03F7/207 , G03F7/20 , H01L21/027 , G03C5/00 , G03B27/42 , G03B27/52 , G03B27/54
CPC分类号： G03F7/70641 , G03F1/44
摘要： A method for manufacturing a semiconductor device, comprising obtaining a first dimension difference or ratio which shows a dimension difference or ratio of a latent images of a first and a second focus monitor marks, or a dimension difference or ratio of a first and a second focus monitor marks, calculating a first defocus value based on the first dimension difference or ratio, obtaining second characteristic showing defocus value characteristic for a pressure inside a chamber based on pairs of the pressure and defocus value, measuring the pressure, predicting the defocus value based on the measured pressure and the second characteristic, correcting the relationship between a focus position of an exposure light and a position on the optical axis of the second resist film in accordance with the predicted defocus value, and forming the latent image of the circuit pattern on the second photo resist film.
摘要翻译：一种制造半导体器件的方法，包括获得显示第一和第二聚焦监视标记的潜像的尺寸差或比例的第一尺寸差或比率，或第一和第二焦点的尺寸差或比率监测标记，基于第一维度差或比率计算第一散焦值，获得基于压力和散焦值对来获得室内压力的散焦值特性的第二特性，测量压力，基于测量压力和第二特性，根据预测的散焦值校正曝光光的焦点位置和第二抗蚀剂膜的光轴上的位置之间的关系，以及将电路图案的潜像形成在第二光刻胶膜。

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