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1. 发明授权

US06798038B2 Manufacturing method of semiconductor device with filling insulating film into trench 失效
标题翻译：具有填充绝缘膜的沟槽的半导体器件的制造方法
公开(公告)号：US06798038B2
公开(公告)日：2004-09-28
申请号：US10140941
申请日：2002-05-09
申请人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
发明人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
IPC分类号： H01L2900
CPC分类号： H01L21/76224
摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.
摘要翻译：根据HDP技术，在形成在半导体衬底的表面上或上方的沟槽的内表面上开始形成第一氧化硅膜。然后，第一氧化硅膜的沉积在沟槽的开口闭合之前停止。此外，蚀刻沉积在开口附近的第一氧化硅膜，并且根据HDP技术在沉积在沟槽底部的第一氧化硅膜上形成第二氧化硅膜。以这种方式，第一和第二氧化硅膜可以层压在沟槽的底部。

2. 发明申请

US20060189092A1 Manufacturing method of semiconductor device with filling insulating film into trench 失效
公开(公告)号：US20060189092A1
公开(公告)日：2006-08-24
申请号：US11395134
申请日：2006-04-03
申请人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
发明人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

3. 发明授权

US07371654B2 Manufacturing method of semiconductor device with filling insulating film into trench 失效
标题翻译：具有填充绝缘膜的沟槽的半导体器件的制造方法
公开(公告)号：US07371654B2
公开(公告)日：2008-05-13
申请号：US11395134
申请日：2006-04-03
申请人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
发明人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.
摘要翻译：根据HDP技术，在形成在半导体衬底的表面上或上方的沟槽的内表面上开始形成第一氧化硅膜。然后，第一氧化硅膜的沉积在沟槽的开口闭合之前停止。此外，蚀刻沉积在开口附近的第一氧化硅膜，并且根据HDP技术在沉积在沟槽底部的第一氧化硅膜上形成第二氧化硅膜。以这种方式，第一和第二氧化硅膜可以层压在沟槽的底部。

4. 发明授权

US6153509A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6153509A
公开(公告)日：2000-11-28
申请号：US343699
申请日：1999-06-30
申请人： Kei Watanabe , Yukio Nishiyama , Naruhiko Kaji , Hideshi Miyajima
发明人： Kei Watanabe , Yukio Nishiyama , Naruhiko Kaji , Hideshi Miyajima
IPC分类号： H01L21/768 , H01L21/38 , H01L21/322 , H01L21/44
CPC分类号： H01L21/76837 , H01L21/76834 , Y10S438/963
摘要： In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.
摘要翻译：在制造半导体元件的半导体器件的制造方法中，在室内压力为5mTorr以下的条件下，至少在金属配线的上表面上形成SiOF膜。因此，可以将SiOF膜埋入金属配线之间的空间，而不产生任何空隙，并且可以防止布线之间的电容增加，同时防止金属布线被损坏并防止纵横比增加。

5. 发明授权

US5571578A Method for forming silicon oxide on a semiconductor 失效
标题翻译：在半导体上形成氧化硅的方法
公开(公告)号：US5571578A
公开(公告)日：1996-11-05
申请号：US372325
申请日：1995-01-13
申请人： Naruhiko Kaji , Riichirou Aoki , Hiroyuki Toyama , Hidemitsu Egawa , Takamitsu Yoshida , Yukio Nishiyama
发明人： Naruhiko Kaji , Riichirou Aoki , Hiroyuki Toyama , Hidemitsu Egawa , Takamitsu Yoshida , Yukio Nishiyama
IPC分类号： H01L21/205 , C23C16/40 , C23C16/509 , H01L21/31 , H01L21/316 , H05H1/24
CPC分类号： H01J37/32165 , C23C16/402 , C23C16/5096 , H01L21/02131 , H01L21/02274 , H01L21/02362 , H01L21/31608
摘要： A plasma CVD device having a chamber, an upper electrode provided in the chamber, an under electrode provided in the chamber to be opposite to the upper electrode and to mount a sample thereon, and a plurality of power sources having a different frequency connected to the upper electrode. Gas is introduced into the chamber of the plasma CVD device, the gas contains at least an organic silicon compound, CF.sub.4 and O.sub.2, and has an element ratio (F/Si) of silicon (Si), constituting the organic silicon compound, to fluorine (F), constituting CF.sub.4, to be set to 15 or more. Si(OC.sub.2 H.sub.5).sub.4 or Si(OCH.sub.3).sub.4 is used as an organic silicon compound.
摘要翻译：一种等离子体CVD装置，其具有室，设置在室中的上电极，设置在室中的与上电极相对的底电极，并在其上安装样品，以及具有不同频率的多个电源连接到上电极。将气体引入到等离子体CVD装置的室中，气体至少含有有机硅化合物CF4和O2，并且构成有机硅化合物的硅（Si）的元素比（F / Si）与氟（F），构成CF4，设定为15以上。 Si（OC2H5）4或Si（OCH3）4用作有机硅化合物。

6. 发明授权

US06368977B1 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US06368977B1
公开(公告)日：2002-04-09
申请号：US09605436
申请日：2000-06-29
申请人： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Takashi O , Toshimitsu Omine , Isao Matsui , Osamu Yamazaki , Naruhiko Kaji
发明人： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Takashi O , Toshimitsu Omine , Isao Matsui , Osamu Yamazaki , Naruhiko Kaji
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/32082
摘要： There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.
摘要翻译：提供了一种半导体器件制造方法，其包括将处理过的衬底装载在反应室中的第一步骤，以预定流量将反应气体引入反应室的第二步骤，保持反应室内部的第三步骤在预定压力下的反应室，通过向布置在反应室中的电极提供高频功率而开始产生等离子体的第四步骤，向经处理的基板施加预定处理的第五步骤，以及停止发生的第六步骤的等离子体通过在预定处理完成之后停止供给高频功率，其中当等离子体的产生停止时反应气体被连续地引入。

7. 发明授权

US5792326A Method and apparatus for generating ozone and methods of its use 失效
标题翻译：用于生成臭氧的方法和装置及其使用方法
公开(公告)号：US5792326A
公开(公告)日：1998-08-11
申请号：US782390
申请日：1997-01-13
申请人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji , Yutaka Nakano
发明人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji , Yutaka Nakano
IPC分类号： C01B13/10 , C01B13/11 , C23C8/12 , C23C16/40 , C23C16/44 , C23C16/448
CPC分类号： C23C16/448 , C01B13/10 , C01B13/11 , C23C16/402 , C23C16/4402 , C23C8/12 , C01B2201/60
摘要： Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices. Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10-20 vol % of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
摘要翻译：臭氧发生器（10），其在施加高压下向臭氧发生电池（11）供应进料气体，并且通过臭氧气体输送路径（由管道（14）和（15）组成）输送臭氧气体）在臭氧发生电池（11）中产生的臭氧气体输送路径的特征在于，臭氧气体输送路径具有用于除去NOx，HF和SO x中的至少一种的装置（在附图中，用于除去NOx的装置），臭氧气体从臭氧发生电池（11）通过所述去除装置，由此在所述臭氧气体中的NOx，HF和SO x中的至少一种在被输送到后续阶段之前被去除。产物臭氧根本不被Cr化合物污染或污染不足，导致制造高度集成的半导体器件的任何实际问题。或者，臭氧发生器（10）包括具有用于供应进料气体的入口（8）的臭氧发生电池（11），用于排出产生的臭氧的高压施加装置（35）和出口（29），以及臭氧输送路径（30）和（31）用于输送生成的臭氧的特征在于，使用补充有10〜20体积％的二氧化碳和/或一氧化碳（2）的氧（1）作为原料气。这样生成的臭氧在Cr化合物的含量上显着地很低，因此可以适当地用于形成金属氧化物，特别是氧化硅。

8. 发明授权

US07084077B2 Method of fabricating multilayer interconnect wiring structure having low dielectric constant insulator film with enhanced adhesivity 失效
标题翻译：制造具有增强的粘附性的具有低介电常数绝缘膜的多层互连布线结构的方法
公开(公告)号：US07084077B2
公开(公告)日：2006-08-01
申请号：US10927123
申请日：2004-08-27
申请人： Naruhiko Kaji , Katsumi Yoneda
发明人： Naruhiko Kaji , Katsumi Yoneda
IPC分类号： H01L21/26 , H01L21/42 , H01L21/324
CPC分类号： H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76826 , H01L21/76829
摘要： A method for fabricating a high density semiconductor integrated circuit device with a multilayer interconnect wiring structure is disclosed. This structure has a low-dielectric constant insulator film including an organic thin-film with its dielectric constant ranging from about 2.0 to about 2.4. To fabricate the multilayer wiring structure, a substrate with an inorganic film for use as an underlayer dielectric film is prepared. Then, apply plasma processing, such as plasma-assisted chemical vapor-phase growth, to a top surface of the inorganic underlayer dielectric film in environment that contains therein organic silane-based chemical compounds, thereby to form on the inorganic film surface a hydrophobic surface layer with a contact angle with water being 50° or higher. Next, form on the plasma-processed hydrophobic surface an organic film including a fluorinated aromatic carbon hydride polymer film. The resulting adhesion between the stacked inorganic and organic films is thus enhanced while at the same time reducing or minimizing electrical resistivity and capacitance of the multilayer structure.
摘要翻译：公开了一种制造具有多层互连布线结构的高密度半导体集成电路器件的方法。该结构具有低介电常数绝缘膜，其包括其介电常数为约2.0至约2.4的有机薄膜。为了制造多层布线结构，制备具有用作下层电介质膜的无机膜的基板。然后，在含有有机硅烷类化合物的环境中，将等离子体辅助化学气相生长等离子体处理施加到无机底层电介质膜的顶面，由此在无机膜表面形成疏水性表面与水接触角为50°或更高的层。接下来，在等离子体处理的疏水性表面上形成含有氟化芳香族碳氢化合物聚合物膜的有机膜。因此，层叠的无机和有机膜之间的粘附力增强，同时降低或最小化多层结构的电阻率和电容。

9. 发明授权

US5794114A Ozonizer 失效
标题翻译：臭氧发生器
公开(公告)号：US5794114A
公开(公告)日：1998-08-11
申请号：US517879
申请日：1995-08-23
申请人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji
发明人： Minoru Harada , Ryoichi Shinjo , Manabu Tsujimura , Rempei Nakata , Kunihiro Miyazaki , Naruhiko Kaji
IPC分类号： C01B13/11 , B01J19/08
CPC分类号： C01B13/11
摘要： In an improved ozonizer, at least those parts of an ozone gas delivery path located downstream of an ozone generating cell which are to come into contact with ozone gas are either composed of or coated with at least one ozone-resistant, Cr-free material selected from among aluminum (Al), an aluminum alloy, Teflon, fluorinated nickel, a nickel alloy, a silicon oxide based glass and a high-purity aluminium oxide. The ozonizer is capable of producing ozone that is not contaminated with Cr compounds at all or which is insufficiently contaminated to cause any practical problem in the fabrication of highly integrated semiconductor devices.
摘要翻译：在改进的臭氧发生器中，至少与臭氧气体接触的位于臭氧发生电池下游的臭氧气体输送路径的那些部分由或者由至少一种耐臭氧，不含Cr的材料选择从铝（Al），铝合金，特氟隆，氟化镍，镍合金，氧化硅基玻璃和高纯度氧化铝中选择。臭氧发生器能够产生根本没有被Cr化合物污染的臭氧，或者在高度集成的半导体器件的制造中没有被污染不足造成任何实际问题。

10. 发明申请

US20050085097A1 Method of fabricating multilayer interconnect wiring structure having low dielectric constant insulator film with enhanced adhesivity 失效
标题翻译：制造具有增强的粘附性的具有低介电常数绝缘膜的多层互连布线结构的方法
公开(公告)号：US20050085097A1
公开(公告)日：2005-04-21
申请号：US10927123
申请日：2004-08-27
申请人： Naruhiko Kaji , Katsumi Yoneda
发明人： Naruhiko Kaji , Katsumi Yoneda
IPC分类号： C23C16/30 , C23C16/56 , H01L21/31 , H01L21/312 , H01L21/768 , H01L23/522 , H01L21/4763 , H01L21/469
CPC分类号： H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76826 , H01L21/76829
摘要： A method for fabricating a high density semiconductor integrated circuit device with a multilayer interconnect wiring structure is disclosed. This structure has a low-dielectric constant insulator film including an organic thin-film with its dielectric constant ranging from about 2.0 to about 2.4. To fabricate the multilayer wiring structure, a substrate with an inorganic film for use as an underlayer dielectric film is prepared. Then, apply plasma processing, such as plasma-assisted chemical vapor-phase growth, to a top surface of the inorganic underlayer dielectric film in environment that contains therein organic silane-based chemical compounds, thereby to form on the inorganic film surface a hydrophobic surface layer with a contact angle with water being 50° or higher. Next, form on the plasma-processed hydrophobic surface an organic film including a fluorinated aromatic carbon hydride polymer film. The resulting adhesion between the stacked inorganic and organic films is thus enhanced while at the same time reducing or minimizing electrical resistivity and capacitance of the multilayer structure.
摘要翻译：公开了一种制造具有多层互连布线结构的高密度半导体集成电路器件的方法。该结构具有低介电常数绝缘膜，其包括其介电常数为约2.0至约2.4的有机薄膜。为了制造多层布线结构，制备具有用作下层电介质膜的无机膜的基板。然后，在含有有机硅烷类化合物的环境中，将等离子体辅助化学气相生长等离子体处理施加到无机底层电介质膜的顶面，由此在无机膜表面上形成疏水性表面与水接触角为50°或更高的层。接下来，在等离子体处理的疏水性表面上形成含有氟化芳香族碳氢化合物聚合物膜的有机膜。因此，层叠的无机和有机膜之间的粘附力增强，同时降低或最小化多层结构的电阻率和电容。

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