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1. 发明授权

US06333246B1 Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system 有权
标题翻译：使用静电卡盘和半导体器件制造系统的半导体器件制造方法
公开(公告)号：US06333246B1
公开(公告)日：2001-12-25
申请号：US09604722
申请日：2000-06-28
申请人： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Osamu Yamazaki , Toshimitsu Omine , Isao Matsui , Takashi O
发明人： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Osamu Yamazaki , Toshimitsu Omine , Isao Matsui , Takashi O
IPC分类号： H01L2120
CPC分类号： H01J37/321 , C23C16/4401 , C23C16/50 , H01L21/31116
摘要： A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.
摘要翻译：半导体器件制造方法包括以下步骤：将处理的基板放置在处理室中的基板支架上的静电卡盘上，并向静电卡盘施加负电压。在施加负电压之后，将基板粘贴到静电卡盘上，将处理气体引入到处理室中，产生放电等离子体，并且如预定的那样处理基板。

2. 发明授权

US5955382A Microwave excitation plasma processing apparatus and microwave excitation plasma processing method 失效
标题翻译：微波激发等离子体处理装置和微波激发等离子体处理方法
公开(公告)号：US5955382A
公开(公告)日：1999-09-21
申请号：US5689
申请日：1998-01-13
申请人： Takeshi Yamauchi , Katsuaki Aoki , Masashi Yamage
发明人： Takeshi Yamauchi , Katsuaki Aoki , Masashi Yamage
IPC分类号： H01L21/00
CPC分类号： H01J37/32229
摘要： A microwave excitation plasma processing apparatus comprises a vacuum container having a plasma generating chamber at an upper portion thereof and a processing chamber, a gas supply pipe for supplying a process gas into the plasma generating chamber, a dielectric window arranged in an opening of an upper wall portion of the vacuum container, a rectangular waveguide arranged on the upper wall portion of the vacuum container including the dielectric window and comprising a first wall having a first surface perpendicular to a direction of electric field of a microwave to oppose the dielectric window, second walls having second surfaces parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the first surface, and a third wall having a third surface which is provided on a side opposite to a microwave introducing side perpendicular to the first and second surfaces to reflect the microwave, and a microwave oscillator for introducing the microwave into the waveguide, wherein the waveguide has two slits which are formed in the first wall and located in the vicinity of the second walls, and which extend in parallel or substantially parallel to the second walls, each of the slits having a width which is smaller on a side closer to the third surface.
摘要翻译：一种微波激发等离子体处理装置，包括：上部具有等离子体发生室的真空容器，以及处理室，用于将等离子体发生室内的工序气体供给的气体供给管，布置在上部真空容器的壁部分，布置在包括电介质窗口的真空容器的上壁部分上的矩形波导，并且包括具有垂直于微波的电场方向的第一表面的第一壁以与电介质窗口相对的第二壁，第二壁具有与微波的电场方向平行的第二表面，并且在垂直于第一表面的方向上延伸，第三壁具有第三表面，第三表面设置在与第一表面垂直的微波导入侧的相对侧上，反射微波的第二表面和用于引入微波的微波振荡器波导到波导中，其中波导具有形成在第一壁中并位于第二壁附近的两个狭缝，并且其平行或大致平行于第二壁延伸，每个狭缝的宽度为在靠近第三表面的一侧较小。

3. 发明授权

US08021565B2 Surface treatment method, etching method, and method for manufacturing electronic device 有权
标题翻译：表面处理方法，蚀刻方法和电子器件的制造方法
公开(公告)号：US08021565B2
公开(公告)日：2011-09-20
申请号：US12054092
申请日：2008-03-24
申请人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
发明人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
IPC分类号： C03C15/00
CPC分类号： H01L21/02071 , Y10S438/905 , Y10S438/906
摘要： A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
摘要翻译：表面处理方法包括：通过氧气等离子体处理从工件表面除去含氟烃反应产物。工件包括多个层。通过连续蚀刻工件的层来沉积含碳氟化合物的反应产物。该方法还包括在除去反应产物之后，使用氟化氢气体从工件的表面除去含氧化物的反应产物。

4. 发明申请

US20090000640A1 SURFACE TREATMENT METHOD, ETCHING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
标题翻译：表面处理方法，蚀刻方法和制造电子器件的方法
公开(公告)号：US20090000640A1
公开(公告)日：2009-01-01
申请号：US12054092
申请日：2008-03-24
申请人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
发明人： Katsuaki Aoki , Naoya Hayamizu , Kei Hattori , Yukihiro Oka , Hidemi Kanetaka , Makoto Hasegawa
IPC分类号： B08B6/00
CPC分类号： H01L21/02071 , Y10S438/905 , Y10S438/906
摘要： A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
摘要翻译：表面处理方法包括：通过氧气等离子体处理从工件表面除去含氟烃反应产物。工件包括多个层。通过连续蚀刻工件的层来沉积含碳氟化合物的反应产物。该方法还包括在除去反应产物之后，使用氟化氢气体从工件的表面除去含氧化物的反应产物。

5. 发明授权

US07833911B2 Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor device 有权
标题翻译：半导体装置的制造方法，半导体装置及半导体装置的制造装置
公开(公告)号：US07833911B2
公开(公告)日：2010-11-16
申请号：US11690450
申请日：2007-03-23
申请人： Hiroshi Katsumata , Katsuaki Aoki
发明人： Hiroshi Katsumata , Katsuaki Aoki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144
摘要： A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.
摘要翻译：一种制造半导体器件的方法包括：蚀刻设置在腔室中的晶片上的第一膜; 通过蚀刻去除沉积在面向晶片的腔室中的部件上的至少部分反应产物，以使沉积的反应产物的分布状态更接近均匀的状态; 然后蚀刻设置在腔室中的晶片上的第二膜。

6. 发明申请

US20080293251A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080293251A1
公开(公告)日：2008-11-27
申请号：US12053122
申请日：2008-03-21
申请人： Katsuaki AOKI , Hiroshi KATSUMATA , Keisuke UNOSAWA
发明人： Katsuaki AOKI , Hiroshi KATSUMATA , Keisuke UNOSAWA
IPC分类号： H01L21/3065
CPC分类号： H01L21/76816 , H01L21/31116
摘要： A method for manufacturing a semiconductor device in which a first hole and a second hole having a lower aspect ratio than the first hole are formed in an insulating film formed on a semiconductor substrate is provided. The method includes: performing a first etching process configured to etch the insulating film; and performing a second etching process configured to etch the insulating film. The second etching process is performed under a condition that deposition rate of a deposited layer formed on a surface of the insulating film is lower than that in the first etching process.
摘要翻译：提供一种制造半导体器件的方法，其中在形成在半导体衬底上的绝缘膜中形成具有比第一孔的纵横比低的第一孔和第二孔。该方法包括：执行配置成蚀刻绝缘膜的第一蚀刻工艺; 以及执行配置为蚀刻绝缘膜的第二蚀刻工艺。第二蚀刻工艺在形成在绝缘膜的表面上的沉积层的沉积速率低于第一蚀刻工艺中的沉积速率的条件下进行。

7. 发明申请

US20080076261A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法，制造半导体器件和半导体器件的装置
公开(公告)号：US20080076261A1
公开(公告)日：2008-03-27
申请号：US11690450
申请日：2007-03-23
申请人： Hiroshi Katsumata , Katsuaki Aoki
发明人： Hiroshi Katsumata , Katsuaki Aoki
IPC分类号： H01L21/302
CPC分类号： H01L21/31144
摘要： A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.
摘要翻译：一种制造半导体器件的方法包括：蚀刻设置在腔室中的晶片上的第一膜; 通过蚀刻去除沉积在面向晶片的腔室中的部件上的至少部分反应产物，以使沉积的反应产物的分布状态更接近均匀的状态; 然后蚀刻设置在腔室中的晶片上的第二膜。

8. 发明授权

US06368977B1 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US06368977B1
公开(公告)日：2002-04-09
申请号：US09605436
申请日：2000-06-29
申请人： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Takashi O , Toshimitsu Omine , Isao Matsui , Osamu Yamazaki , Naruhiko Kaji
发明人： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Takashi O , Toshimitsu Omine , Isao Matsui , Osamu Yamazaki , Naruhiko Kaji
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/32082
摘要： There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.
摘要翻译：提供了一种半导体器件制造方法，其包括将处理过的衬底装载在反应室中的第一步骤，以预定流量将反应气体引入反应室的第二步骤，保持反应室内部的第三步骤在预定压力下的反应室，通过向布置在反应室中的电极提供高频功率而开始产生等离子体的第四步骤，向经处理的基板施加预定处理的第五步骤，以及停止发生的第六步骤的等离子体通过在预定处理完成之后停止供给高频功率，其中当等离子体的产生停止时反应气体被连续地引入。

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