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1. 发明授权

US06172322B2 Annealing an amorphous film using microwave energy 失效
标题翻译：使用微波能量退火非晶膜
公开(公告)号：US06172322B2
公开(公告)日：2001-01-09
申请号：US08965939
申请日：1997-11-07
申请人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Takako Takehara , Taekyung Won , Sheng Sun
发明人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Takako Takehara , Taekyung Won , Sheng Sun
IPC分类号： H05B680
CPC分类号： C23C16/56
摘要： A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.
摘要翻译：一种用于对处理室中的基板上的膜进行退火的系统和方法，该处理室包括微波发生器，微波发生器被设置成向腔室内部的区域提供微波。微波的频率使得膜在频率上基本上是吸收性的，但是基底在频率上基本上不吸收。波导将微波分布在膜的表面上，以在膜的表面上提供基本上均匀的微波用量的微波。该方法包括在处理室中的衬底上沉积膜。在沉积步骤的至少一部分时间内，产生具有频率使得该膜在频率处具有吸收峰但基底在该频率处缺少实质吸收峰的频率的微波。微波指向电影。

2. 发明授权

US07122962B2 Plasma display panel with a low K dielectric layer 失效
标题翻译：具有低K电介质层的等离子显示面板
公开(公告)号：US07122962B2
公开(公告)日：2006-10-17
申请号：US10460837
申请日：2003-06-11
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： H01J17/49
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
摘要翻译：包括低k电介质层的等离子体显示面板。在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。在另一个实施例中，电介质层包括Black Diamond TM层。在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

3. 发明授权

US06610354B2 Plasma display panel with a low k dielectric layer 失效
公开(公告)号：US06610354B2
公开(公告)日：2003-08-26
申请号：US09886174
申请日：2001-06-18
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： C23C1640
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

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