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1. 发明授权

US06170428B2 Symmetric tunable inductively coupled HDP-CVD reactor 失效
标题翻译：对称可调谐电感耦合HDP-CVD反应堆
公开(公告)号：US06170428B2
公开(公告)日：2001-01-09
申请号：US08679927
申请日：1996-07-15
申请人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
发明人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , C23C16/507 , H01J37/321 , H01J37/32467 , H01J37/32522 , H01J37/32862
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.
摘要翻译：本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

2. 发明授权

US5720818A Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck 失效
公开(公告)号：US5720818A
公开(公告)日：1998-02-24
申请号：US639596
申请日：1996-04-26
申请人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
发明人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , C23C16/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T29/49002 , Y10T29/49826 , Y10T29/49885
摘要： The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

3. 发明授权

US6108189A Electrostatic chuck having improved gas conduits 失效
标题翻译：静电吸盘具有改进的气体导管
公开(公告)号：US6108189A
公开(公告)日：2000-08-22
申请号：US965690
申请日：1997-11-06
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , H02N13/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

4. 发明授权

US06721162B2 Electrostatic chuck having composite dielectric layer and method of manufacture 有权
标题翻译：具有复合介电层的静电吸盘及其制造方法
公开(公告)号：US06721162B2
公开(公告)日：2004-04-13
申请号：US10095914
申请日：2002-03-12
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.
摘要翻译：静电吸盘具有能够带电的电极，以静电保持基板。复合层覆盖电极。复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成材料。卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

5. 发明授权

US5904776A Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck 失效
标题翻译：用于将传热流体流动到静电卡盘表面的导管
公开(公告)号：US5904776A
公开(公告)日：1999-05-18
申请号：US924976
申请日：1997-09-08
申请人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
发明人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , C23C16/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T29/49002 , Y10T29/49826 , Y10T29/49885
摘要： The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.
摘要翻译：本发明公开了两种基本结构（包括一种基本结构内的多种变型）以及用于制造促进冷却气体或其它传热流体流向静电卡盘表面的结构的方法。基本结构既解决了RF等离子体环境中的传热气体的分解问题，又涉及这种RF等离子体环境中的半导体基板与静电卡盘的导电基座部分之间的电弧放电的问题。

6. 发明授权

US06414834B1 Dielectric covered electrostatic chuck 有权
标题翻译：介质覆盖静电卡盘
公开(公告)号：US06414834B1
公开(公告)日：2002-07-02
申请号：US09596108
申请日：2000-06-16
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

7. 发明授权

US06829056B1 Monitoring dimensions of features at different locations in the processing of substrates 失效
标题翻译：监测基板加工中不同位置特征的尺寸
公开(公告)号：US06829056B1
公开(公告)日：2004-12-07
申请号：US10646943
申请日：2003-08-21
申请人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
发明人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
IPC分类号： G01B1114
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
摘要翻译：基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。提供过程监视器以监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。室控制器接收并评估第一和第二信号，并相对于信号操作室。例如，腔室控制器可以根据信号值选择工艺配方。腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

8. 发明授权

US06372633B1 Method and apparatus for forming metal interconnects 失效
标题翻译：用于形成金属互连的方法和装置
公开(公告)号：US06372633B1
公开(公告)日：2002-04-16
申请号：US09111657
申请日：1998-07-08
申请人： Dan Maydan , Ashok K. Sinha , Zheng Xu , Liang-Yu Chen , Roderick Craig Mosely , Daniel Carl , Diana Xiaobing Ma , Yan Ye , Wen Chiang Tu
发明人： Dan Maydan , Ashok K. Sinha , Zheng Xu , Liang-Yu Chen , Roderick Craig Mosely , Daniel Carl , Diana Xiaobing Ma , Yan Ye , Wen Chiang Tu
IPC分类号： H01L214763
CPC分类号： H01L21/76838 , H01L21/32136 , H01L21/76885
摘要： The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.
摘要翻译：本发明提供了一种用于形成可靠互连的方法和装置，其中使插塞或通孔上的线重叠最小化或消除。在一个方面，由诸如钨的导电材料构成的阻挡塞沉积在通孔上，以在线蚀刻期间提供蚀刻停止并且防止金属（例如铜）扩散到周围的介电材料中，如果线在通道上不对齐。此外，阻挡塞防止互连的电阻的总体降低，并且能够使用反应离子蚀刻来形成金属线。在另一方面，使用反应离子蚀刻技术来选择性地蚀刻金属线和阻挡层，以提供对金属线，然后是屏障，然后是通孔或插塞的选择性的受控蚀刻工艺。

9. 发明授权

US6109206A Remote plasma source for chamber cleaning 失效
标题翻译：远程等离子体源用于室内清洁
公开(公告)号：US6109206A
公开(公告)日：2000-08-29
申请号：US864995
申请日：1997-05-29
申请人： Dan Maydan , Romuald Nowak , Ashok K. Sinha
发明人： Dan Maydan , Romuald Nowak , Ashok K. Sinha
IPC分类号： C23C16/44 , H01J37/32 , H01L21/00 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67028 , C23C16/4405 , H01J37/32862 , Y10S156/916
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

10. 发明授权

US06503375B1 Electroplating apparatus using a perforated phosphorus doped consumable anode 失效
标题翻译：使用穿孔磷掺杂的消耗性阳极的电镀设备
公开(公告)号：US06503375B1
公开(公告)日：2003-01-07
申请号：US09503156
申请日：2000-02-11
申请人： Dan Maydan , Ashok K. Sinha
发明人： Dan Maydan , Ashok K. Sinha
IPC分类号： C25B900
CPC分类号： H01L21/76843 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873
摘要： The present invention generally provides an apparatus for forming a doped metal film on a conductive substrate. In one aspect of the invention, an apparatus is provided that includes a phosphorus doped anode used for depositing a phosphorus doped metal film, such as a seed layer, in an electrochemical deposition process. The phosphorus doped anode preferably includes an enclosure providing for flow of an electrolyte therethrough, a phosphorus doped metal disposed within the enclosure, and an electrode disposed through the enclosure and in electrical connection with the phosphorus doped metal. Another aspect of the invention provides an apparatus for electrochemical deposition of a phosphorus doped metal onto a substrate includes a substrate holder adapted to hold the substrate in a position where the substrate plating surface is exposed to an electrolyte in an electrolyte container, a cathode electrically contacting the substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive the substrate plating surface, and a phosphorus doped anode electrically connected to the electrolyte.
摘要翻译：本发明通常提供一种用于在导电衬底上形成掺杂金属膜的装置。在本发明的一个方面，提供一种装置，其包括用于在电化学沉积工艺中沉积磷掺杂金属膜例如种子层的磷掺杂阳极。磷掺杂阳极优选地包括提供电解质流过的外壳，设置在外壳内的磷掺杂金属，以及通过外壳设置并与磷掺杂金属电连接的电极。本发明的另一方面提供了一种用于将磷掺杂金属电化学沉积到衬底上的设备，包括：衬底保持器，其适于将衬底保持在电镀液容器中的电解质暴露于衬底镀层表面的位置，阴极电接触基板电镀表面，具有电解质入口的电解质容器，电解液出口和适于接收基板电镀表面的开口，以及电连接到电解质的磷掺杂阳极。

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