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1. 发明申请

US20080099006A1 METHOD FOR SIMULTANEOUSLY SLICING AT LEAST TWO CYLINDRICAL WORKPIECES INTO A MULTIPLICITY OF WAFERS 有权
公开(公告)号：US20080099006A1
公开(公告)日：2008-05-01
申请号：US11923722
申请日：2007-10-25
申请人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
发明人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
IPC分类号： B23D57/00
CPC分类号： B28D5/042
摘要： Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length LG, is performed by: a) selecting a number n≧2 of workpieces from a stock of workpieces with different lengths, satisfying the inequality L G ≥ ( n - 1 ) · A min + ∑ i = 1 n   L 1 ( 1 ) and making right-hand side of the inequality as large as possible, where Li with i=1 . . . n are for the lengths of the workpieces and Amin is a predefined minimum spacing, b) fixing the n workpieces successively in the longitudinal direction on a mounting plate while maintaining a spacing A≧Amin therebetween such that the relationship L G ≥ ( n - 1 ) · A + ∑ i = 1 n   L i ( 2 ) is satisfied, c) clamping mounting plates workpieces in a multi wire saw, and d) slicing the n workpieces perpendicularly to their longitudinal axis by means of the multi wire saw. Preferably, the wafer stacks are separated from one another by separating pieces after slicing, and at the same time are laterally supported.

2. 发明授权

US07766724B2 Method for simultaneously slicing at least two cylindrical workpieces into a multiplicity of wafers 有权
标题翻译：用于将至少两个圆柱形工件同时切割成多个晶片的方法
公开(公告)号：US07766724B2
公开(公告)日：2010-08-03
申请号：US11923722
申请日：2007-10-25
申请人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
发明人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
IPC分类号： B24B49/00 , B24D1/06
CPC分类号： B28D5/042
摘要： Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length LG, is performed by: a) selecting a number n≧2 of workpieces from a stock of workpieces with different lengths, satisfying the inequality L G ≥ ( n - 1 ) · A min + ∑ i = 1 n ⁢ ⁢ L 1 ( 1 ) and making right-hand side of the inequality as large as possible, where Li with i=1 . . . n are for the lengths of the workpieces and Amin is a predefined minimum spacing, b) fixing the n workpieces successively in the longitudinal direction on a mounting plate while maintaining a spacing A≧Amin therebetween such that the relationship L G ≥ ( n - 1 ) · A + ∑ i = 1 n ⁢ ⁢ L i ( 2 ) is satisfied, c) clamping mounting plates workpieces in a multi wire saw, and d) slicing the n workpieces perpendicularly to their longitudinal axis by means of the multi wire saw. Preferably, the wafer stacks are separated from one another by separating pieces after slicing, and at the same time are laterally supported.
摘要翻译：通过以下方式执行多个圆柱形工件进入晶圆：通过以下步骤进行：a）从不同长度的工件库存中选择n≥2个工件，满足不等式LG≥（n-1） ·A min +Σi = 1 n⁢L 1（1），使不等式的右边尽可能大，其中i i = 1。。。 n为工件的长度，Amin为预定的最小间距，b）将n个工件在长度方向上连续固定在安装板上，同时保持间距A≥Am，使得LG≥（n-1） ·A +Σi = 1 n≠L i（2），c）将多个线锯中的工件夹紧，d）通过多线锯将n个工件垂直于其纵向轴线切割。优选地，通过在切片之后分离片而将晶片堆叠彼此分离，并且同时被横向支撑。

3. 发明申请

US20080264228A1 Wire Guide Roll For Wire Saw 审中-公开
标题翻译：线锯导丝辊
公开(公告)号：US20080264228A1
公开(公告)日：2008-10-30
申请号：US12106428
申请日：2008-04-21
申请人： Anton Huber , Engelbert Auer , Manfred Schoenhofer , Helmut Seehofer , Peter Wiesner
发明人： Anton Huber , Engelbert Auer , Manfred Schoenhofer , Helmut Seehofer , Peter Wiesner
IPC分类号： B26D1/54 , B28D1/08
CPC分类号： B23D57/0053 , B23D61/18 , B24B27/0633 , B28D5/045 , B65H57/14 , Y10T83/696 , Y10T83/9292
摘要： A wire guide roll for use in wire saws for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece is provided with a coating having a thickness of at least 2 mm and at most 7.5 mm of a material which has a Shore A hardness of at least 60 and at most 99, and which contains a multiplicity of grooves through which the sawing wire is guided, the grooves each having a curved groove base with a radius of curvature which is 0.25-1.6 times the sawing wire diameter, and an aperture angle of 60-130°. A multiplicity of wafers are simultaneously sliced from a cylindrical workpiece by means of a wire saw using such wire guide rolls.
摘要翻译：用于线锯同时从圆筒形工件切片多个晶片的导丝辊设置有厚度至少为2mm且至多7.5mm的涂层，该涂层的肖氏A硬度至少为 60和至多99个，并且其包含多个槽，锯线通过该槽被引导，所述槽各自具有曲率半径为弯曲直径的0.25-1.6倍的弯曲槽基部，并且孔径角 60-130°。通过使用这种导线辊的线锯同时从圆柱形工件切片多个晶片。

4. 发明授权

US10245661B2 Wire guide roll for wire saw and method 有权
公开(公告)号：US10245661B2
公开(公告)日：2019-04-02
申请号：US12106428
申请日：2008-04-21
申请人： Anton Huber , Engelbert Auer , Manfred Schoenhofer , Helmut Seehofer , Peter Wiesner
发明人： Anton Huber , Engelbert Auer , Manfred Schoenhofer , Helmut Seehofer , Peter Wiesner
IPC分类号： B23D57/00 , B23D61/18 , B24B27/06 , B28D5/04 , B65H57/14
摘要： A wire guide roll for use in wire saws for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece is provided with a coating having a thickness of at least 2 mm and at most 7.5 mm of a material which has a Shore A hardness of at least 60 and at most 99, and which contains a multiplicity of grooves through which the sawing wire is guided, the grooves each having a curved groove base with a radius of curvature which is 0.25-1.6 times the sawing wire diameter, and an aperture angle of 60-130°. A multiplicity of wafers are simultaneously sliced from a cylindrical workpiece by a wire saw using such wire guide rolls.

5. 发明授权

US06861360B2 Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers 有权
标题翻译：用于制造多个硅半导体晶片的双面抛光工艺
公开(公告)号：US06861360B2
公开(公告)日：2005-03-01
申请号：US10294846
申请日：2002-11-14
申请人： Guido Wenski , Thomas Altmann , Anton Huber , Alexander Heilmaier
发明人： Guido Wenski , Thomas Altmann , Anton Huber , Alexander Heilmaier
IPC分类号： B24B37/04 , B24B49/16 , C30B29/06 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/042 , B24B37/08 , B24B49/16
摘要： A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRmax of less than or equal to 0.13 μm, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)max of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm. There is also a process for producing a multiplicity of silicon semiconductor wafers by simultaneous double-side polishing between in each case one lower polishing plate and one upper polishing plate, which rotate, are parallel to one another and to which polishing cloth has been adhesively bonded, while a polishing agent, which contains abrasives or colloids, is being supplied, with at least 2 μm of silicon being removed, wherein a predetermined proportion of the semiconductor wafers is at least partially polished using a lower polishing pressure, and a further proportion of the semiconductor wafers is polished using a higher polishing pressure.
摘要翻译：具有大于或等于200mm的直径的硅半导体晶片和抛光的前表面和抛光后表面以及小于或等于0.13μm的最大局部平坦度值SFQRmax，基于具有尺寸为26mm×8mm的前表面，其中，从理想平面的前表面的最大局部高度偏差P / V（10×10）max小于或等于70nm，基于尺寸为10mm×10mm的滑动子区域。还有一种通过在每种情况下同时进行双面抛光来生产多个硅半导体晶片的方法，其中一个下抛光板和一个上抛光板相互平行，并且抛光布已经被粘合到该抛光板上同时提供含有研磨剂或胶体的抛光剂，除去至少2个微米的硅，其中使用较低的抛光压力至少部分地抛光半导体晶片的预定比例，另外一部分使用更高的抛光压力来抛光半导体晶片。

6. 发明授权

US07108583B1 Method for removing material from a semiconductor wafer 有权
标题翻译：从半导体晶片去除材料的方法
公开(公告)号：US07108583B1
公开(公告)日：2006-09-19
申请号：US11377946
申请日：2006-03-16
申请人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
发明人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
IPC分类号： B24B13/00
CPC分类号： B24B37/042
摘要： The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03–0.5 μm during one revolution of the semiconductor wafer.
摘要翻译：本发明涉及通过机械加工从半导体晶片去除材料的方法，其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转，所述砂轮相对于半导体晶片并且以使得半导体晶片的轴向中心进入砂轮的工作范围的方式定位，砂轮以进给速度沿半导体晶片的方向移动，结果是研磨轮和半导体晶片彼此前进，同时半导体晶片和砂轮围绕平行轴线旋转，使得半导体晶片的表面被研磨，其中砂轮在定义量的材料之后以返回速率返回已经被除去，其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。在半导体晶片的一圈内的5um。

7. 发明申请

US20060211338A1 METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR WAFER 有权
标题翻译：从半导体滤波器中去除材料的方法
公开(公告)号：US20060211338A1
公开(公告)日：2006-09-21
申请号：US11377946
申请日：2006-03-16
申请人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
发明人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
IPC分类号： B24B51/00
CPC分类号： B24B37/042
摘要： The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03-0.5 μm during one revolution of the semiconductor wafer.
摘要翻译：本发明涉及通过机械加工从半导体晶片去除材料的方法，其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转，所述砂轮相对于半导体晶片并且以这样的方式定位，使得半导体晶片的轴向中心进入砂轮的工作范围，砂轮以进给速度沿半导体晶片的方向移动，结果是研磨轮和半导体晶片彼此前进，同时半导体晶片和砂轮围绕平行轴线旋转，使得半导体晶片的表面被研磨，其中砂轮在定义量的材料之后以返回速率返回已经被除去，其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。在半导体晶片的一圈内的5um。

8. 发明授权

US09073135B2 Method for slicing wafers from a workpiece 有权
标题翻译：从工件切片晶圆的方法
公开(公告)号：US09073135B2
公开(公告)日：2015-07-07
申请号：US13423350
申请日：2012-03-19
申请人： Anton Huber , Wolfgang Gmach , Robert Kreuzeder , Peter Wiesner
发明人： Anton Huber , Wolfgang Gmach , Robert Kreuzeder , Peter Wiesner
IPC分类号： B28D5/00 , B28D1/08 , B23D57/00 , B28D5/04
CPC分类号： B23D57/0053 , B28D5/0064 , B28D5/0076 , B28D5/045
摘要： A method for slicing wafers from a workpiece includes providing wire guide rolls that each have a grooved coating with a specific thickness, providing a fixed bearing respectively associated with each wire guide roll and providing a sawing wire including wire sections disposed in a parallel fashion. The wire sections are tensioned between the wire guide rolls and are moved relative to the workpiece so as to perform a sawing operation. The wire guide rolls cooled and the fixed bearings are cooled independently of the wire guide rolls.
摘要翻译：一种用于从工件切片晶片的方法包括提供每个具有特定厚度的带槽涂层的导丝辊，提供分别与每个线导向辊相关联的固定轴承，并提供包括以平行方式设置的线段的锯线。线段在线导向辊之间张紧并相对于工件移动，以进行锯切操作。导丝辊被冷却，固定的轴承独立于导线辊被冷却。

9. 发明授权

US08746227B2 Method for slicing wafers from a workpiece 有权
标题翻译：从工件切片晶圆的方法
公开(公告)号：US08746227B2
公开(公告)日：2014-06-10
申请号：US13415863
申请日：2012-03-09
申请人： Anton Huber , Wolfgang Gmach , Robert Kreuzeder , Peter Wiesner
发明人： Anton Huber , Wolfgang Gmach , Robert Kreuzeder , Peter Wiesner
IPC分类号： B23D61/18
CPC分类号： B28D5/045 , B23D57/0053 , B28D5/0076
摘要： A method for slicing wafers from a workpiece includes providing wire guide rolls each having a grooved coating with a specific thickness and providing rings at opposing ends of a first of the coatings of a respective wire guide roll. The rings are fixed exclusively to the first coating. A sawing wire including wire sections disposed in a parallel fashion is tensioned between the wire guide rolls. The wire sections of the sawing wire are moved relative to the workpiece so as to perform a sawing operation. A change in length of the first coating, brought about by a temperature change, is measured by measuring distances between sensors and the rings. The wire guide rolls are cooled in a manner dependent on the measured distances.
摘要翻译：用于从工件切片晶片的方法包括提供每个具有特定厚度的带槽涂层的导丝辊，并且在相应导丝辊的第一涂层的相对端处提供环。环固定在第一个涂层上。包括以平行方式设置的线段的锯线在线导向辊之间被张紧。锯线的线段相对于工件移动，以进行锯切操作。通过测量传感器和环之间的距离来测量由温度变化引起的第一涂层的长度变化。导线辊以取决于测量距离的方式冷却。

10. 发明授权

US07767470B2 Semiconductor wafers with highly precise edge profile and method for producing them 失效
标题翻译：具有高精度边缘轮廓的半导体晶片及其制造方法
公开(公告)号：US07767470B2
公开(公告)日：2010-08-03
申请号：US11828441
申请日：2007-07-26
申请人： Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
发明人： Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
IPC分类号： H01L21/00
CPC分类号： H01L21/02021 , B24B9/065
摘要： A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.
摘要翻译：半导体晶片具有沿着半导体晶片的圆周延伸并且连接具有限定的边缘轮廓的边缘的前侧和后侧的前侧，后侧和边缘，所述边缘轮廓基本上在半导体晶片的整个周长。制造这种晶片的方法允许生产多个半导体晶片，该边缘轮廓从半导体晶片到半导体晶片基本上是恒定的。

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