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    • 1. 发明授权
    • Method for removing material from a semiconductor wafer
    • 从半导体晶片去除材料的方法
    • US07108583B1
    • 2006-09-19
    • US11377946
    • 2006-03-16
    • Alexander HeilmaierRobert DrexlerAnton HuberRobert Weiss
    • Alexander HeilmaierRobert DrexlerAnton HuberRobert Weiss
    • B24B13/00
    • B24B37/042
    • The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03–0.5 μm during one revolution of the semiconductor wafer.
    • 本发明涉及通过机械加工从半导体晶片去除材料的方法,其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转,所述砂轮相对于 半导体晶片并且以使得半导体晶片的轴向中心进入砂轮的工作范围的方式定位,砂轮以进给速度沿半导体晶片的方向移动,结果是研磨 轮和半导体晶片彼此前进,同时半导体晶片和砂轮围绕平行轴线旋转,使得半导体晶片的表面被研磨,其中砂轮在定义量的材料之后以返回速率返回 已经被除去,其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。 在半导体晶片的一圈内的5um。
    • 2. 发明申请
    • METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR WAFER
    • 从半导体滤波器中去除材料的方法
    • US20060211338A1
    • 2006-09-21
    • US11377946
    • 2006-03-16
    • Alexander HeilmaierRobert DrexlerAnton HuberRobert Weiss
    • Alexander HeilmaierRobert DrexlerAnton HuberRobert Weiss
    • B24B51/00
    • B24B37/042
    • The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03-0.5 μm during one revolution of the semiconductor wafer.
    • 本发明涉及通过机械加工从半导体晶片去除材料的方法,其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转,所述砂轮相对于 半导体晶片并且以这样的方式定位,使得半导体晶片的轴向中心进入砂轮的工作范围,砂轮以进给速度沿半导体晶片的方向移动,结果是研磨 轮和半导体晶片彼此前进,同时半导体晶片和砂轮围绕平行轴线旋转,使得半导体晶片的表面被研磨,其中砂轮在定义量的材料之后以返回速率返回 已经被除去,其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。 在半导体晶片的一圈内的5um。