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    • 1. 发明授权
    • Uniformity control multiple tilt axes, rotating wafer and variable scan velocity
    • 均匀性控制多个倾斜轴,旋转晶片和可变扫描速度
    • US07166854B2
    • 2007-01-23
    • US11021420
    • 2004-12-23
    • Anthony RenauJoseph C. OlsonDonna L. SmatlakJun Lu
    • Anthony RenauJoseph C. OlsonDonna L. SmatlakJun Lu
    • H01J37/08
    • H01J37/3023H01J37/304H01J37/3171H01J2237/20214H01J2237/31703H01L21/265
    • A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
    • 公开了一种用于在离子注入期间增强剂量均匀性的系统,方法和程序产品。 本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向(扫描方向)来获得均匀的注入。 不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。 光束可以是任何尺寸,形状或调谐。 在扫描之后,保持晶片的压板旋转到新的期望的旋转固定取向,并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。 还包括用于进行均匀剂量离子注入的方法,系统和程序产品,其中靶相对于离子束旋转并且倾斜大于大于一个轴。
    • 2. 发明授权
    • Uniformity control using multiple fixed wafer orientations and variable scan velocity
    • 使用多个固定晶片取向和可变扫描速度的均匀性控制
    • US07161161B2
    • 2007-01-09
    • US11008764
    • 2004-12-08
    • Anthony RenauJoseph C. OlsonDonna L. SmatlakJun Lu
    • Anthony RenauJoseph C. OlsonDonna L. SmatlakJun Lu
    • G21K5/10
    • H01J37/3023H01J37/304H01J37/3171H01J2237/20214H01J2237/31703H01L21/265
    • A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
    • 公开了一种用于在离子注入期间增强剂量均匀性的系统,方法和程序产品。 本发明旨在允许使用至少部分未调谐的离子束通过以可变或不均匀的扫描速度以目标的多个旋转固定取向(扫描方向)扫描光束来获得均匀的注入。 不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。 光束可以是任何尺寸,形状或调谐。 在扫描之后,保持晶片的压板旋转到新的期望的旋转固定取向,并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。 该技术可以独立地使用或与其他均匀性方法结合使用以实现所需的均匀性水平。
    • 3. 发明申请
    • Uniformity control using multiple tilt axes, rotating wafer and variable scan velocity
    • 使用多个倾斜轴,旋转晶片和可变扫描速度的均匀性控制
    • US20050263721A1
    • 2005-12-01
    • US11021420
    • 2004-12-23
    • Anthony RenauJoseph OlsonDonna SmatlakJun Lu
    • Anthony RenauJoseph OlsonDonna SmatlakJun Lu
    • G21K5/10H01J37/08
    • H01J37/3023H01J37/304H01J37/3171H01J2237/20214H01J2237/31703H01L21/265
    • A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
    • 公开了一种用于在离子注入期间增强剂量均匀性的系统,方法和程序产品。 本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向(扫描方向)来获得均匀的注入。 不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。 光束可以是任何尺寸,形状或调谐。 在扫描之后,保持晶片的压板旋转到新的期望的旋转固定取向,并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。 还包括用于进行均匀剂量离子注入的方法,系统和程序产品,其中靶相对于离子束旋转并且倾斜大于大于一个轴。
    • 4. 发明申请
    • Uniformity control using multiple fixed wafer orientations and variable scan velocity
    • 使用多个固定晶片取向和可变扫描速度的均匀性控制
    • US20050258379A1
    • 2005-11-24
    • US11008764
    • 2004-12-08
    • Anthony RenauJoseph OlsonDonna SmatlakJun Lu
    • Anthony RenauJoseph OlsonDonna SmatlakJun Lu
    • G21K5/10H01J37/08
    • H01J37/3023H01J37/304H01J37/3171H01J2237/20214H01J2237/31703H01L21/265
    • A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
    • 公开了一种用于在离子注入期间增强剂量均匀性的系统,方法和程序产品。 本发明旨在允许使用至少部分未调谐的离子束通过以可变或不均匀的扫描速度以目标的多个旋转固定取向(扫描方向)扫描光束来获得均匀的注入。 不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。 光束可以是任何尺寸,形状或调谐。 在扫描之后,保持晶片的压板旋转到新的期望的旋转固定取向,并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。 该技术可以独立地使用或与其他均匀性方法结合使用以实现所需的均匀性水平。