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1. 发明授权

US4483196A Tubular transducer structures 失效
标题翻译：管状传感器结构
公开(公告)号：US4483196A
公开(公告)日：1984-11-20
申请号：US472851
申请日：1983-03-07
申请人： Anthony D. Kurtz , Joseph R. Mallon, Jr. , Timothy A. Nunn
发明人： Anthony D. Kurtz , Joseph R. Mallon, Jr. , Timothy A. Nunn
IPC分类号： G01L9/00 , G01L9/06
CPC分类号： G01L9/0052 , G01L9/0002
摘要： A pressure transducer employs a tubular glass structure of a "D" shaped cross section, with the arcuate section of the "D" shaped configuration being substantially thicker than the base section. A sensor array is positioned on the underside of the base section while a pressure conducting fluid is directed through the tubular member to provide deflection of the base to cause the sensor array to provide an output indicative of pressure variations in the fluid medium. The sensor array as positioned on the underside of the base is both electrically and mechanically isolated from the pressure conducting medium.
摘要翻译：压力传感器采用“D”形横截面的管状玻璃结构，“D”形构造的弓形部分基本上比基部部分厚。传感器阵列定位在基部的下侧，同时压力传导流体被引导通过管状构件以提供基部的偏转，以使传感器阵列提供指示流体介质中的压力变化的输出。位于基座下侧的传感器阵列与导电介质电气和机械隔离。

2. 发明授权

US4481497A Transducer structures employing ceramic substrates and diaphragms 失效
标题翻译：采用陶瓷基板和隔膜的传感器结构
公开(公告)号：US4481497A
公开(公告)日：1984-11-06
申请号：US437109
申请日：1982-10-27
申请人： Anthony D. Kurtz , Joseph R. Mallon, Jr. , Timothy A. Nunn
发明人： Anthony D. Kurtz , Joseph R. Mallon, Jr. , Timothy A. Nunn
IPC分类号： G01L1/22 , G01L9/00 , G01L9/06
CPC分类号： G01L19/148 , G01L9/0055 , Y10T29/49103
摘要： A hybrid transducer employing a ceramic substrate having on a surface a suitable geometry for defining an active or clamped area, a semiconductor strain gage is positioned on said substrate within said active area and connections are made to said gage by conductors printed on said substrate by thick or thin film techniques. Thick film printing techniques or thin film deposition techniques are employed to print the conductors, terminal areas, compensating resistors and stop members.
摘要翻译：一种采用陶瓷衬底的混合传感器，其在表面上具有用于限定有源或夹紧区域的合适几何形状，半导体应变计定位在所述有源区域内的所述衬底上，并且通过厚度印刷在所述衬底上的导体与所述量规连接或薄膜技术。使用厚膜印刷技术或薄膜沉积技术来印刷导体，端子区域，补偿电阻器和阻挡件。

3. 发明授权

US4814856A Integral transducer structures employing high conductivity surface features 失效
标题翻译：采用高导电性表面特征的积分换能器结构
公开(公告)号：US4814856A
公开(公告)日：1989-03-21
申请号：US860523
申请日：1986-05-07
申请人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
发明人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
IPC分类号： G01L9/00 , H01L27/20
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译：通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。载体晶片在顶表面上具有包括玻璃层的电介质层。在人造晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。这些区域表现出基本的换能器结构。通过利用选择性蚀刻，因此可以在牺牲晶片上形成通过静电键结合到载体晶片上的换能器结构。所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。

4. 发明授权

US4236137A Semiconductor transducers employing flexure frames 失效
标题翻译：采用挠性框架的半导体传感器
公开(公告)号：US4236137A
公开(公告)日：1980-11-25
申请号：US21960
申请日：1979-03-19
申请人： Anthony D. Kurtz , Joseph R. Mallon , Timothy A. Nunn
发明人： Anthony D. Kurtz , Joseph R. Mallon , Timothy A. Nunn
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L9/0054 , G01L9/0042
摘要： A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.
摘要翻译：压力传感器采用半导体膜片，其上表面具有由预定宽度的连续凹槽包围或“框起”的梯形横截面的中心凸台区域。压电传感器形成在所述隔膜的底表面上，第一传感器邻近所述槽的外边缘，另一个传感器平行于所述第一传感器并与所述槽的内边缘相邻，所述凹槽用作应力集中区域，以使所述传感器，以在向所述隔膜施加力时提供相对较大的线性输出。

5. 发明授权

US4516430A Economical transducer apparatus for use in the medical field 失效
标题翻译：用于医疗领域的经济传感器装置
公开(公告)号：US4516430A
公开(公告)日：1985-05-14
申请号：US558033
申请日：1983-12-05
申请人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： A61B5/0215 , A61B5/0428 , G01L9/00 , G01L1/22
CPC分类号： A61B5/04282 , A61B5/0215 , G01L9/0055
摘要： There is disclosed a medical transducer apparatus which employs composite planar members each of which is fabricated from a highly insulative material. The members are positioned in congruency and a first member which may be a composite member has a diaphragm area located on the surface thereof to which a piezoresistive gage is bonded. The gage is surrounded by an aperture in another member to enable leads from the gage to be directed to an interconnection and circuit board also fabricated from an insulator material. The structure provides isolation to the patient in regard to the biasing source used for the gage array and also provides isolation based on external voltage which serves to protect the transducer during operation.
摘要翻译：公开了一种医疗用换能器装置，其采用由高绝缘材料制成的复合平面构件。构件一致地定位，并且可以是复合构件的第一构件具有位于其压电压力表所粘合的表面上的隔膜区域。量具被另一个构件中的孔包围，以使得量具的引线被引导到也由绝缘体材料制成的互连和电路板。该结构提供了与用于量具阵列的偏置源相对于患者的隔离，并且还提供了基于外部电压的隔离，其用于在操作期间保护换能器。

6. 发明授权

US4510671A Dielectrically isolated transducer employing single crystal strain gages 失效
标题翻译：采用单晶应变计的电绝缘传感器
公开(公告)号：US4510671A
公开(公告)日：1985-04-16
申请号：US537100
申请日：1983-11-21
申请人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： G01L1/22 , G01L9/00 , H01L21/265 , H01L21/762 , H01L29/84
CPC分类号： H01L21/76243 , G01L1/2293 , G01L9/0055 , H01L21/26506 , H01L29/84 , Y10S148/159 , Y10S438/97 , Y10S438/977 , Y10T29/49103
摘要： A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top surface of the wafer to enable the etching or formation of a desired gage pattern.
摘要翻译：公开了一种换能器结构，其包括通过单晶计配置的二氧化硅层介电隔离的单晶半导体隔膜。所描述的方法使用高剂量氧，其被离子注入到单晶晶片中以形成二氧化硅的掩埋层，其中晶片的顶表面是单晶硅。在晶片的顶表面上外延生长另外的硅层，以便蚀刻或形成期望的量具图案。

7. 发明授权

US5002901A Method of making integral transducer structures employing high conductivity surface features 失效
标题翻译：使用高电导率表面特征制作积分传感器结构的方法
公开(公告)号：US5002901A
公开(公告)日：1991-03-26
申请号：US251816
申请日：1988-10-03
申请人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
发明人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
IPC分类号： G01L9/00 , H01L27/20
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20 , Y10S148/012 , Y10T29/42
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by mean of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译：通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。载体晶片在顶表面上具有包括玻璃层的电介质层。牺牲晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。这些区域表现出基本的换能器结构。通过利用选择性蚀刻，因此可以在牺牲晶片上形成换能器结构，其通过静电键结合到载体晶片。所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。

8. 发明授权

US4739298A High temperature transducers and methods of manufacturing 失效
标题翻译：高温传感器和制造方法
公开(公告)号：US4739298A
公开(公告)日：1988-04-19
申请号：US706889
申请日：1985-02-28
申请人： Anthony D. Kurtz , Richard A. Weber , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Richard A. Weber , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L9/0055 , Y10T29/49103
摘要： A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.
摘要翻译：高温换能器由具有单层硅基底层的第一部分组成，该层被氧化物涂覆。将高温玻璃的薄层溅射在基底层的氧化物层上。通过扩散N型硅晶片形成p +层来形成第二部分。第一和第二部分通过阳极结合在一起，其中p +层被固定到玻璃层以形成复合结构。然后去除N型材料并在p +层中形成压阻电流。该结构提供了一个在宽工作范围内表现出稳定运行参数的高温换能器。

9. 发明授权

US4406992A Semiconductor pressure transducer or other product employing layers of single crystal silicon 失效
标题翻译：半导体压力传感器或采用单晶硅层的其他产品
公开(公告)号：US4406992A
公开(公告)日：1983-09-27
申请号：US255461
申请日：1981-04-20
申请人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： G01L1/22 , G01L9/00
CPC分类号： G01L1/2293 , G01L9/0055
摘要： A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.
摘要翻译：单晶硅衬底在表面上形成由一系列平行凹槽表现的光栅图案，电介质层在所述表面上热生长以在所述电介质的相对表面上复制所述图案，并且沉积在所述相对面上的硅层所述电介质的表面是由所述光栅确定的单晶硅。所形成的结构使得能够选择性地处理沉积的单晶层以提供至少一个压阻感测元件，从而提供具有集电器或基板以及单晶硅的感测元件的换能器，并通过所述介电层介电隔离。

10. 发明授权

US5702619A Method for fabricating a high pressure piezoresistive transducer 失效
标题翻译：制造高压压阻式换能器的方法
公开(公告)号：US5702619A
公开(公告)日：1997-12-30
申请号：US723519
申请日：1996-09-30
申请人： Anthony D. Kurtz , Andrew V. Bemis , Timothy A. Nunn , Alexander A. Ned
发明人： Anthony D. Kurtz , Andrew V. Bemis , Timothy A. Nunn , Alexander A. Ned
IPC分类号： G01L9/00 , H01L21/00 , B44C1/22
CPC分类号： G01L9/0055
摘要： A method of fabricating a high pressure piezoresistive pressure transducer having a substantially linear pressure versus stress output over its full range of operation. The method involves bonding a carrier wafer having a dielectric isolating layer on one surface and a supporting member on the opposite surface, to a pattern wafer containing at least two single crystalline longitudinal piezoresistive sensing elements of a second conductivity. Both the pattern wafer and sections of the carrier wafer are etched leaving the piezoresistive sensing elements bonded directly to the dielectric isolating layer, and a diaphragm member having a deflecting portion and a non-deflecting portion. The diaphragm member is constructed to have an aspect ratio which is of the order of magnitude of one. The piezoresistive sensing elements have a large transverse piezoresistive coefficient normal to the plane of the diaphragm and both a large longitudinal piezoresistive coefficient and a small transverse piezoresistive coefficient in the plane of the diaphragm. One of the at least two piezoresistive sensing elements is positioned above the non-deflection portion of the diaphragm in an area of minimal longitudinal stress and the other is positioned above the deflecting portion of the diaphragm in an area of high compressive stress. The positioning of the second sensor over the deflecting portion of the diaphragm is selected so that there will be equal and opposite resistance changes registered from the sensors. The method results in an improved transducer design when compared to prior art devices.
摘要翻译：一种制造高压压阻式压力传感器的方法，该压力传感器在其全部操作范围内具有基本线性的压力与应力输出。该方法包括将具有介电隔离层的载体晶片和相对表面上的支撑构件结合到包含至少两个具有第二导电性的单晶纵向压阻式感测元件的图案晶片。蚀刻晶片和载体晶片的两个部分，留下直接结合到绝缘隔离层的压阻感测元件，以及具有偏转部分和非偏转部分的隔膜部件。隔膜构件被构造成具有一个数量级的纵横比。压阻感测元件具有垂直于隔膜平面的大的横向压阻系数，并且在隔膜平面中具有大的纵向压阻系数和小的横向压阻系数。至少两个压阻感测元件中的一个在最小纵向应力的区域中位于隔膜的非偏转部分上方，另一个位于隔膜的偏转部分的高压缩应力区域的上方。选择第二传感器在隔膜的偏转部分上的定位，使得从传感器注册相同和相反的阻力变化。与现有技术的装置相比，该方法导致改进的换能器设计。

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