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    • 6. 发明授权
    • Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
    • 抛光包括多晶硅和至少一种氧化硅和氮化硅的衬底的方法
    • US08492277B2
    • 2013-07-23
    • US12724721
    • 2010-03-16
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • C03C15/00C03C25/68H01L21/302H01L21/461
    • H01L21/31053C09G1/02
    • A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
    • 提供了一种用于基板的化学机械抛光的方法,包括:提供基板,其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物,其包含作为初始组分的水; 研磨剂 和无环有机磺酸化合物,其中所述无环有机磺酸化合物具有6至30个碳原子的无环疏水部分和具有10至300个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。
    • 10. 发明申请
    • Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
    • 用适于增强氧化硅去除的抛光组合物对衬底进行化学机械抛光的方法
    • US20110244685A1
    • 2011-10-06
    • US12750799
    • 2010-03-31
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • H01L21/306
    • H01L21/31053C09G1/02C09K3/1463
    • A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
    • 提供了一种用于基板的化学机械抛光的方法,包括:提供基板,其中所述基板包括氧化硅; 提供化学机械抛光组合物,其包含作为初始组分的水; 研磨剂 和根据式I的物质,其中R 1,R 2和R 3各自独立地选自C 1-4烷基; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中包括在化学机械抛光组合物中的根据式I的物质提供增强的氧化硅去除速率和改善的抛光缺陷性能; 并且其中所述氧化硅中的至少一些从所述衬底去除。