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1. 发明申请

US20120258598A1 Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光底物的方法
公开(公告)号：US20120258598A1
公开(公告)日：2012-10-11
申请号：US13494412
申请日：2012-06-12
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00 , H01L21/302 , B82Y30/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜20重量％的平均粒径为5〜50nm的研磨剂; 和0.001至1重量％的根据式（II）的金刚烷基物质：其中A选自N和P; 其中每个R 8独立地选自氢，饱和或不饱和的C 1-15烷基，C 6-15芳基，C 6-15芳烷基，C 6-15烷芳基; 并且其中式（II）中的阴离子可以是平衡式（II）中阳离子上的正电荷的任何阴离子。

2. 发明申请

US20110306211A1 Stabilized Chemical Mechanical Polishing Composition And Method Of Polishing A Substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光底物的方法
公开(公告)号：US20110306211A1
公开(公告)日：2011-12-15
申请号：US12815564
申请日：2010-06-15
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamarityl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜40重量％的平均粒径为5〜150nm的研磨剂; 0.001至1重量％的根据式（II）的金属物质; 0至1重量％的式（I）的二季物质; 和0〜1重量％的季铵化合物。此外，提供了使用化学机械抛光组合物的化学机械抛光的方法。

3. 发明申请

US20110230050A1 METHOD OF POLISHING A SUBSTRATE COMPRISING POLYSILICON AND AT LEAST ONE OF SILICON OXIDE AND SILICON NITRIDE 有权
标题翻译：抛光包含多晶硅和至少一种氧化硅和氮化硅的基材的方法
公开(公告)号：US20110230050A1
公开(公告)日：2011-09-22
申请号：US12724990
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸酯化合物，其中烷基芳基聚醚磺酸酯化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。

4. 发明授权

US08568610B2 Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate 有权
标题翻译：稳定的，可浓缩的化学机械抛光组合物和抛光基材的方法
公开(公告)号：US08568610B2
公开(公告)日：2013-10-29
申请号：US12885748
申请日：2010-09-20
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02
摘要： A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.
摘要翻译：提供了一种化学机械抛光组合物，其包括作为初始组分：水，研磨剂; 根据式（I）的二季物质; 根据式（II）的胍衍生物; 和任选的季铵盐。此外，提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括二氧化硅; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基底之间的界面处产生动态接触; 以及将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物的pH为2至6。

5. 发明授权

US08431490B2 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal 有权
标题翻译：用适于增强氧化硅去除的抛光组合物对衬底进行化学机械抛光的方法
公开(公告)号：US08431490B2
公开(公告)日：2013-04-30
申请号：US12750799
申请日：2010-03-31
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L31/31051
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括氧化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和根据式I的物质，其中R 1，R 2和R 3各自独立地选自C 1-4烷基; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中包括在化学机械抛光组合物中的根据式I的物质提供增强的氧化硅去除速率和改善的抛光缺陷性能; 并且其中所述氧化硅中的至少一些从所述衬底去除。

6. 发明申请

US20110230049A1 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅和至少一种氧化硅和氮化硅的衬底的方法
公开(公告)号：US20110230049A1
公开(公告)日：2011-09-22
申请号：US12724721
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和无环有机磺酸化合物，其中所述无环有机磺酸化合物具有6至30个碳原子的无环疏水部分和具有10至300个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。

7. 发明授权

US08790160B2 Chemical mechanical polishing composition and method for polishing phase change alloys 有权
标题翻译：化学机械抛光组合物和抛光相变合金的方法
公开(公告)号：US08790160B2
公开(公告)日：2014-07-29
申请号：US13096707
申请日：2011-04-28
申请人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： B24B1/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
摘要翻译：一种使用化学机械抛光组合物的包含锗 - 锑 - 碲硫族化物相变合金（GST）的基板的化学机械抛光的方法，其包含作为初始成分的水; 研磨剂邻苯二甲酸，邻苯二甲酸酐，邻苯二甲酸酯化合物和邻苯二甲酸衍生物中的至少一种; 螯合剂; 聚（丙烯酸 - 共 - 马来酸）; 和氧化剂; 其中化学机械抛光组合物有利于具有低缺陷性的高GST去除速率。

8. 发明授权

US08491808B2 Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅，氧化硅和氮化硅的衬底的方法
公开(公告)号：US08491808B2
公开(公告)日：2013-07-23
申请号：US12724685
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅，氧化硅和氮化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸盐化合物，其中烷基芳基聚醚磺酸盐化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 和根据式I的物质，其中R1，R2，R3，R4，R5，R6和R7中的每一个是具有式 - （CH 2）n - 的桥连基团，其中n是选自1至10的整数; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中从所述衬底去除所述氧化硅和氮化硅中的至少一些。

9. 发明授权

US08444728B2 Stabilized chemical mechanical polishing composition and method of polishing a substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光基材的方法
公开(公告)号：US08444728B2
公开(公告)日：2013-05-21
申请号：US13494412
申请日：2012-06-12
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜20重量％的平均粒径为5〜50nm的研磨剂; 和0.001至1重量％的根据式（II）的金刚烷基物质：其中A选自N和P; 其中每个R 8独立地选自氢，饱和或不饱和的C 1-15烷基，C 6-15芳基，C 6-15芳烷基，C 6-15烷芳基; 并且其中式（II）中的阴离子可以是平衡式（II）中阳离子上的正电荷的任何阴离子。

10. 发明授权

US08309468B1 Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys 有权
标题翻译：化学机械抛光组合物和抛光锗 - 锑 - 碲合金的方法
公开(公告)号：US08309468B1
公开(公告)日：2012-11-13
申请号：US13096740
申请日：2011-04-28
申请人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
摘要翻译：一种使用化学机械抛光组合物进行化学机械抛光的方法，其包括锗 - 锑 - 碲硫族化物相变合金（GST），所述化学机械抛光组合物基本上由以下组分组成：初始组分：水; 研磨剂选自乙二胺四乙酸及其盐的材料; 和氧化剂; 其中化学机械抛光组合物有利于具有低缺陷性的高GST去除速率。

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