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1. 发明授权

US08765493B2 Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics 有权
标题翻译：基于产品晶片特性来表征半导体发光器件的方法
公开(公告)号：US08765493B2
公开(公告)日：2014-07-01
申请号：US13681994
申请日：2012-11-20
申请人： Andrew M. Hawryluk , David Owen
发明人： Andrew M. Hawryluk , David Owen
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , G01B11/24 , H01L33/0095
摘要： Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.
摘要翻译：公开了基于产品晶片特性来表征半导体发光器件（LED）的方法。这些方法包括测量至少一个产品晶片特性，这种曲率或器件层应力。该方法还包括建立从产品晶片形成的LED管芯的至少一个特性与发射波长之间的关系。该关系允许预测在类似形成的产品晶片的器件层中形成的LED结构的发射波长。这又可以用于表征产品晶片，特别是其上形成的LED结构，并且在大容量LED制造中执行过程控制。

2. 发明申请

US20140141538A1 METHODS OF CHARACTERIZING SEMICONDUCTOR LIGHT-EMITTING DEVICES BASED ON PRODUCT WAFER CHARACTERISTICS 有权
标题翻译：基于产品波形特性的半导体发光器件表征方法
公开(公告)号：US20140141538A1
公开(公告)日：2014-05-22
申请号：US13681994
申请日：2012-11-20
申请人： Andrew M. Hawryluk , David Owen
发明人： Andrew M. Hawryluk , David Owen
IPC分类号： H01L33/00 , G01B11/24
CPC分类号： H01L33/005 , G01B11/24 , H01L33/0095
摘要： Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.
摘要翻译：公开了基于产品晶片特性来表征半导体发光器件（LED）的方法。这些方法包括测量至少一个产品晶片特性，这种曲率或器件层应力。该方法还包括建立从产品晶片形成的LED管芯的至少一个特性与发射波长之间的关系。该关系允许预测在类似形成的产品晶片的器件层中形成的LED结构的发射波长。这又可以用于表征产品晶片，特别是其上形成的LED结构，并且在大容量LED制造中执行过程控制。

3. 发明授权

US08845163B2 LED-based photolithographic illuminator with high collection efficiency 有权
标题翻译：基于LED的光刻照明器，收集效率高
公开(公告)号：US08845163B2
公开(公告)日：2014-09-30
申请号：US13588750
申请日：2012-08-17
申请人： David G. Stites , Andrew M. Hawryluk
发明人： David G. Stites , Andrew M. Hawryluk
IPC分类号： F21V5/04
CPC分类号： G03F7/201 , G03F7/70391 , H01L25/0753 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/−2%.
摘要翻译：公开了一种具有高收集效率的基于LED的光刻照明器。照明器利用一系列LED，其中每个LED具有LED管芯和散热器。将LED管芯成像到均质棒的输入端上，以基本上覆盖输入端，而不包括LED的非发光散热片部分。使用微透镜阵列对LED管芯进行成像。照明器的收集效率优于50％，光均质器输出端的照明均匀度在+/- 2％以内。

4. 发明授权

US08823921B2 Programmable illuminator for a photolithography system 有权
标题翻译：用于光刻系统的可编程照明器
公开(公告)号：US08823921B2
公开(公告)日：2014-09-02
申请号：US13199112
申请日：2011-08-19
申请人： Borislav Zlatanov , Andrew M. Hawryluk
发明人： Borislav Zlatanov , Andrew M. Hawryluk
IPC分类号： G03F7/20 , G02B26/08
CPC分类号： G03F7/70066 , G02B26/0833 , G03F7/70558
摘要： A programmable illuminator for a photolithography system includes a light source, a first optical system having a light uniformizing element, a programmable micro-mirror device, and a second optical system that forms an illumination field that illuminates a reticle. The programmable micro-mirror device can be configured to perform shutter and edge-exposure-blocking functions that have previously required relatively large mechanical devices. Methods of improving illumination field uniformity using the programmable illuminator are also disclosed.
摘要翻译：用于光刻系统的可编程照明器包括光源，具有光均化元件的第一光学系统，可编程微镜器件以及形成照明光栅的照明场的第二光学系统。可编程微镜装置可以被配置为执行先前需要相对大的机械装置的快门和边缘曝光阻挡功能。还公开了使用可编程照明器改善照明场均匀性的方法。

5. 发明授权

US08796151B2 Systems for and methods of laser-enhanced plasma processing of semiconductor materials 有权
标题翻译：半导体材料激光等离子体加工的系统和方法
公开(公告)号：US08796151B2
公开(公告)日：2014-08-05
申请号：US13438865
申请日：2012-04-04
申请人： Andrew M. Hawryluk , Arthur W. Zafiropoulo
发明人： Andrew M. Hawryluk , Arthur W. Zafiropoulo
IPC分类号： H01L21/302
CPC分类号： H01J37/32339 , H01J37/32082 , H01L21/02046 , H01L21/268 , H01L21/3065 , H01L21/67115
摘要： Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.
摘要翻译：公开了半导体材料的激光增强等离子体处理的系统和方法。该方法包括将半导体材料支撑在处理室内部并对半导体材料进行等离子体处理。该方法还包括通过处理室中的窗口同时用激光束加热晶片表面以增加等离子体处理的反应速率。其他方法包括在等离子体处理之前或之后对半导体材料进行激光加热，但半导体材料位于相同的室内。

6. 发明申请

US20140057457A1 Non-melt thin-wafer laser thermal annealing methods 有权
标题翻译：非熔化薄晶片激光热退火方法
公开(公告)号：US20140057457A1
公开(公告)日：2014-02-27
申请号：US13595873
申请日：2012-08-27
申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号： H01L21/268 , H01L21/02
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译：公开了薄半导体晶片的退火方法。该方法允许薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。该方法可用于活化掺杂剂或形成欧姆接触。

7. 发明申请

US20090114630A1 Minimization of surface reflectivity variations 审中-公开
标题翻译：最小化表面反射率变化
公开(公告)号：US20090114630A1
公开(公告)日：2009-05-07
申请号：US11982788
申请日：2007-11-05
申请人： Andrew M. Hawryluk
发明人： Andrew M. Hawryluk
IPC分类号： B23K26/08 , B23K26/02
CPC分类号： H01L21/268 , B23K26/0738 , B23K26/0853 , B23K26/352 , B23K26/354 , B23K2101/40 , H01L21/28044
摘要： Apparatuses and methods are provided for processing a surface of a substrate. The substrate may have a surface pattern that exhibits directionally and/or orientationally different reflectivities relative to radiation of a selected wavelength and polarization. The apparatus may include a radiation source that emits a photonic beam of the selected wavelength and polarization directed toward the surface at orientation angle and incidence angle selected to substantially minimize substrate surface reflectivity variations and/or minimize the maximum substrate surface reflectivity during scanning. Also provided are methods and apparatuses for selecting an optimal orientation and/or incidence angle for processing a surface of a substrate.
摘要翻译：提供了用于处理基底表面的装置和方法。衬底可以具有相对于所选波长和偏振的辐射呈现方向和/或取向不同的反射率的表面图案。该装置可以包括发射所选波长的光子束的辐射源，并且以定向角和入射角定位朝向表面的极化，其被选择为基本上最小化衬底表面反射率变化和/或最小化扫描期间的最大衬底表面反射率。还提供了用于选择用于处理衬底的表面的最佳取向和/或入射角的方法和装置。

8. 发明申请

US20080157802A1 DIRECT DETECT SENSOR FOR FLAT PANEL DISPLAYS 审中-公开
标题翻译：用于平板显示器的直接检测传感器
公开(公告)号：US20080157802A1
公开(公告)日：2008-07-03
申请号：US12047275
申请日：2008-03-12
申请人： David W. Gardner , Andrew M. Hawryluk
发明人： David W. Gardner , Andrew M. Hawryluk
IPC分类号： G01R31/312
CPC分类号： G02F1/1309 , G09G3/006
摘要： Each sensor of a linear array of sensors includes, in part, a sensing electrode and an associated feedback circuit. The sensing electrodes are adapted to be brought in proximity to a flat panel having formed thereon a multitude of pixel electrodes in order to capacitively measure the voltage of the pixel electrodes. Each feedback circuit is adapted to actively drive its associated electrode via a feedback signal so as to maintain the voltage of its associated electrode at a substantially fixed bias. Each feedback circuit may include an amplifier having a first input terminal coupled to the sensing electrode and a second input terminal coupled to receive a biasing voltage. The output signal of the amplification circuit is used to generate the feedback signal that actively drives the sensing electrode. The biasing voltage may be the ground potential.
摘要翻译：传感器的线性阵列的每个传感器部分地包括感测电极和相关联的反馈电路。感测电极适于接近其上形成有多个像素电极的平板，以便电容地测量像素电极的电压。每个反馈电路适于经由反馈信号主动驱动其相关联的电极，以便将其相关电极的电压维持在基本上固定的偏压。每个反馈电路可以包括具有耦合到感测电极的第一输入端和耦合以接收偏置电压的第二输入端的放大器。放大电路的输出信号用于产生主动驱动感测电极的反馈信号。偏置电压可能是地电位。

9. 发明授权

US06531681B1 Apparatus having line source of radiant energy for exposing a substrate 有权
标题翻译：具有用于暴露衬底的辐射能的线源的设备
公开(公告)号：US06531681B1
公开(公告)日：2003-03-11
申请号：US09536869
申请日：2000-03-27
申请人： David A. Markle , Andrew M. Hawryluk , Hwan J. Jeong
发明人： David A. Markle , Andrew M. Hawryluk , Hwan J. Jeong
IPC分类号： B23K2606
CPC分类号： G03F7/70558 , B23K26/0738 , G03F7/70225 , G03F7/70391 , H01L21/67115
摘要： Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.
摘要翻译：辐射能量线源（例如，激光二极管阵列）和变形继电器从其接收辐射能，并将能量引导到相对均匀的线图像中的衬底。相对于基板扫描线图像以进行处理。即使线源不均匀，也能提供良好的均匀性。可选地，定位在变形继电器焦平面中的孔径和随后的成像继电器可包括允许基板暴露在条带之间，其中在电路之间的划线内的相邻条带之间具有边界。可以使用具有预定图案的变形继电器焦平面掩模来限定待用基板的部分，并且掩模扫描运动彼此同步。源极输出的控制和基板的位置/速度相对于线图像，允许在衬底上均匀的剂量和所需的幅度。

10. 发明授权

US6002553A Giant magnetoresistive sensor 失效
标题翻译：巨型磁阻传感器
公开(公告)号：US6002553A
公开(公告)日：1999-12-14
申请号：US202991
申请日：1994-02-28
申请人： Daniel G. Stearns , Stephen P. Vernon , Natale M. Ceglio , Andrew M. Hawryluk
发明人： Daniel G. Stearns , Stephen P. Vernon , Natale M. Ceglio , Andrew M. Hawryluk
IPC分类号： G01R33/09 , G11B5/09 , G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/325 , H01F10/3281 , G11B2005/3996 , G11B5/09
摘要： A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.
摘要翻译：具有三维微架构的磁阻传感器元件能够显着改善磁场的灵敏度和高度局部化的测量。传感器由交替磁性和非磁性材料的多层膜形成。传感器在垂直于平面模式的电流中最佳运行。该传感器可用于磁读/写磁头，用于高密度磁信息存储和检索。

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