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    • 4. 发明申请
    • Method for fabricating a magnetic head for perpendicular recording using a CMP lift-off and resistant layer
    • 使用CMP剥离层和耐电层制造用于垂直记录的磁头的方法
    • US20070026537A1
    • 2007-02-01
    • US11184364
    • 2005-07-18
    • Ming JiangSue ZhangYi Zheng
    • Ming JiangSue ZhangYi Zheng
    • G11B5/33H01L21/00
    • G11B5/3163G11B5/1278
    • A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and a photoresist mask respectively. A multi-step reactive-ion etching (RIE) process is preferably used to sequentially remove the excess materials in the layer stack to ultimately define the multilayer mask for the pole piece. The excess pole piece material is then milled away. The wafer is then refilled with a nonmagnetic material such as alumina. A CMP liftoff is used to remove the resist hardmask. The material for the CMP resistant hardmask is selected to have a high resistance to the CMP liftoff process in comparison to the refill material. The CMP resistant hardmask is preferably then removed by a RIE process.
    • 描述了在制造用于磁头的极片的工艺中使用CMP耐磨硬掩模的方法。 作为用于研磨极片的掩模的一组层优选分别包括二氧化硅的CMP耐磨硬掩模,抗蚀剂硬掩模,上硬掩模和光致抗蚀剂掩模。 优选使用多步反应离子蚀刻(RIE)工艺来顺序地去除层叠中的多余材料以最终限定极片的多层掩模。 然后将多余的极片材料磨掉。 然后用非磁性材料如氧化铝再填充晶片。 CMP剥离用于去除抗蚀剂硬掩模。 选择用于CMP耐磨硬掩模的材料以与补充材料相比具有对CMP剥离工艺的高抗性。 然后优选通过RIE工艺去除CMP耐磨硬掩模。
    • 5. 发明申请
    • Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same
    • 磁头线圈系统和镶嵌/反应离子蚀刻方法制造相同
    • US20050152064A1
    • 2005-07-14
    • US11040387
    • 2005-01-20
    • Daniel BedellRichard HsiaoJames JarrattPatrick WebbSue Zhang
    • Daniel BedellRichard HsiaoJames JarrattPatrick WebbSue Zhang
    • G11B5/17G11B5/31G11B5/147
    • G11B5/313G11B5/3123G11B5/3163Y10T29/49021Y10T29/49032Y10T29/4906Y10T29/49064Y10T29/49073
    • A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.
    • 提供一种用于制造用于磁头的线圈结构的系统和方法。 首先,沉积有沉积在绝缘层上的光致抗蚀剂层的绝缘层。 此外,硅介电层作为硬掩模沉积在光致抗蚀剂层上。 然后掩蔽硅介电层。 随后使用反应离子蚀刻(即CF 4 / CH 3)3在硅介电层中形成多个通道。 然后将硅介电层用作硬掩模,以使用例如H 2/2 N 2 / CH的反应离子蚀刻将光致抗蚀剂层中的沟道图案转印 还原化学反应。 为了获得具有期望的高纵横比的最佳通道轮廓,通道形成包括限定第一角度的第一段和限定第二角度的第二段。 此后,导电种子层沉积在通道中,并且通道填充有导电材料以限定线圈结构。 然后可以使用化学机械抛光来平坦化导电材料。
    • 8. 发明申请
    • Methods for fabricating read sensor for magnetic heads with reduced read track width
    • 用于制造磁头读取传感器的方法,读取磁道宽度减小
    • US20050277299A1
    • 2005-12-15
    • US10856679
    • 2004-05-28
    • Quang LeSue Zhang
    • Quang LeSue Zhang
    • G11B5/31H01L21/311H01L21/314
    • C23C16/44G11B5/3163G11B5/3169H01L21/3146
    • The fabrication of the read head sensor components where chemical mechanical polishing (CMP) stop layer is deposited above the sensor layers, a first reactive ion etch (RIE) layer and a second RIE layer are deposited, where the second RIE layer is etchable with a different ion species than the first RIE layer. A stencil layer is then deposited and patterned to create an etching stencil having the desired magnetic read track width of the sensor. An RIE step is then conducted in which the second RIE layer is etched. An RIE step for the first RIE layer is then conducted with a different ion species. Thereafter, the sensor layers are milled where the remaining portions of the first and second RIE layers act as a milling mask. A CMP assisted liftoff step is then conducted in which the remaining portions of the ion milling mask are removed.
    • 沉积化学机械抛光(CMP)停止层沉积在传感器层上方,第一反应离子蚀刻(RIE)层和第二RIE层的读取头传感器部件的制造,其中第二RIE层可以用 不同的离子种类比第一个RIE层。 然后沉积和图案化模板层以产生具有传感器的期望磁读取磁道宽度的蚀刻模版。 然后进行RIE步骤,其中蚀刻第二RIE层。 然后用不同的离子种类进行第一RIE层的RIE步骤。 此后,将第一和第二RIE层的剩余部分用作铣削掩模的传感器层进行研磨。 然后进行CMP辅助剥离步骤,其中除去离子铣削掩模的剩余部分。
    • 9. 发明申请
    • Recessed SiO2 or Si3N4 overcoat for GMR head in magnetic disk drive
    • 用于磁盘驱动器中的GMR磁头的嵌入式SiO2或Si3N4外涂层
    • US20050264949A1
    • 2005-12-01
    • US10857036
    • 2004-05-28
    • Yunxiao GaoAron PentekAlan TamSue Zhang
    • Yunxiao GaoAron PentekAlan TamSue Zhang
    • G11B5/127G11B5/31G11B5/33
    • G11B5/3136G11B5/3106G11B5/3133G11B5/3163Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49048Y10T29/49052
    • A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom can be etched in the overcoat layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.
    • 巨磁阻(GMR)磁头包含由二氧化硅或氮化硅组成的外涂层。 这些材料的热膨胀系数(CTE)小于通常用于外涂层的氧化铝。 结果,当头部与通过的空气流的摩擦加热时,外涂层表现出较小的温度引起的突起。 形成头部的过程包括在外涂层中形成凹陷,其减小了磁极上的应力并提高了磁头的性能。 该方法包括在外涂层上沉积种子层,以准备对具有要形成凹部的开口镀金属掩模层,通过掩模层中的开口湿化学蚀刻晶种层并执行离子铣削加工 去除种子层的剩余痕迹。 随着种子层完全去除,可以通过反应离子蚀刻(RIE)工艺在覆盖层中蚀刻具有平滑侧壁和底部的沟槽。 用于分离晶片中的头元件的锯可以通过干净的沟槽而不与外涂层接触,从而避免由于使用二氧化硅或氮化硅外涂层而导致的切屑和裂纹。