会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • METHOD FOR EXAMINING A WAFER WITH REGARD TO A CONTAMINATION LIMIT AND EUV PROJECTION EXPOSURE SYSTEM
    • 用于检查污染物限制和EUV投影曝光系统的方法
    • US20100183962A1
    • 2010-07-22
    • US12690571
    • 2010-01-20
    • Andreas DORSELStefan Schmidt
    • Andreas DORSELStefan Schmidt
    • G03F7/20G03B27/42
    • G03F7/70916G03F7/70425G03F7/70608G03F7/7075G03F7/70808G03F7/70866G03F7/70925G03F7/70983
    • A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1). The method preferably includes: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. An EUV projection exposure system (1) for carrying out the method is also disclosed. By rejecting wafers having an especially high contamination risk, the contamination of optical elements in the projection exposure system (1) on wafer exposure may be distinctly reduced.
    • 关于污染极限检查至少一个晶片(13)的方法,其中关于抗污染物质(13a)的晶片(13)的抗蚀剂(13a)的污染潜力被检测为污染物质 晶片(13)在EUV投影曝光系统(1)中曝光之前的污染极限。 该方法优选地包括:将晶片(13)和/或涂覆有与晶片(13)的抗蚀剂(13a)相同的抗蚀剂(13a)的测试盘放置在真空室(19)中,抽真空室 19),并且测量从真空室(19)中的晶片(13)脱气的污染物质的污染潜力,并且还将晶片(13)的污染电位与污染极限进行比较。 还公开了一种用于执行该方法的EUV投影曝光系统(1)。 通过拒绝具有特别高的污染风险的晶片,可以明显减少投影曝光系统(1)中晶片曝光的光学元件的污染。
    • 2. 发明授权
    • Method for examining a wafer with regard to a contamination limit and EUV projection exposure system
    • 关于污染极限和EUV投影曝光系统检查晶片的方法
    • US08288064B2
    • 2012-10-16
    • US13153662
    • 2011-06-06
    • Andreas DorselStefan Schmidt
    • Andreas DorselStefan Schmidt
    • G03F9/00G03C5/00
    • G03F7/70916G03F7/70425G03F7/70608G03F7/7075G03F7/70808G03F7/70866G03F7/70925G03F7/70983
    • A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1). The method preferably includes: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. An EUV projection exposure system (1) for carrying out the method is also disclosed. By heating wafers having a high contamination risk, the contamination of optical elements in the projection exposure system (1) on wafer exposure may be distinctly reduced.
    • 关于污染极限检查至少一个晶片(13)的方法,其中关于抗污染物质(13a)的晶片(13)的抗蚀剂(13a)的污染潜力被检测为污染物质 晶片(13)在EUV投影曝光系统(1)中曝光之前的污染极限。 该方法优选地包括:将晶片(13)和/或涂覆有与晶片(13)的抗蚀剂(13a)相同的抗蚀剂(13a)的测试盘放置在真空室(19)中,抽真空室 19),并且测量从真空室(19)中的晶片(13)脱气的污染物质的污染潜力,并且还将晶片(13)的污染电位与污染极限进行比较。 还公开了一种用于执行该方法的EUV投影曝光系统(1)。 通过加热具有高污染风险的晶片,可以明显减少投影曝光系统(1)中的晶片曝光的光学元件的污染。
    • 3. 发明授权
    • Method for examining a wafer with regard to a contamination limit and EUV projection exposure system
    • 关于污染极限和EUV投影曝光系统检查晶片的方法
    • US07955767B2
    • 2011-06-07
    • US12690571
    • 2010-01-20
    • Andreas DorselStefan Schmidt
    • Andreas DorselStefan Schmidt
    • G03F9/00G03C5/00
    • G03F7/70916G03F7/70425G03F7/70608G03F7/7075G03F7/70808G03F7/70866G03F7/70925G03F7/70983
    • A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1). The method preferably includes: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. An EUV projection exposure system (1) for carrying out the method is also disclosed. By rejecting wafers having an especially high contamination risk, the contamination of optical elements in the projection exposure system (1) on wafer exposure may be distinctly reduced.
    • 关于污染极限检查至少一个晶片(13)的方法,其中关于抗污染物质(13a)的晶片(13)的抗蚀剂(13a)的污染潜力被检测为污染物质 晶片(13)在EUV投影曝光系统(1)中曝光之前的污染极限。 该方法优选地包括:将晶片(13)和/或涂覆有与晶片(13)的抗蚀剂(13a)相同的抗蚀剂(13a)的测试盘放置在真空室(19)中,抽真空室 19),并且测量从真空室(19)中的晶片(13)脱气的污染物质的污染潜力,并且还将晶片(13)的污染电位与污染极限进行比较。 还公开了一种用于执行该方法的EUV投影曝光系统(1)。 通过拒绝具有特别高的污染风险的晶片,可以明显减少投影曝光系统(1)中晶片曝光的光学元件的污染。
    • 5. 发明授权
    • Hydraulic drive
    • 液压驱动
    • US07370569B2
    • 2008-05-13
    • US10557023
    • 2004-05-14
    • Stefan SchmidtRolf Heidenfelder
    • Stefan SchmidtRolf Heidenfelder
    • F15B13/04F15B15/17
    • B30B15/16B30B15/161F03C1/007F15B11/022F15B11/024F15B11/028F15B11/036F15B2211/20592F15B2211/3133F15B2211/6653
    • What is disclosed is a hydraulic drive mechanism for a blanking or forming machine comprising a working cylinder having several pressure chambers, the piston of which acts directly or indirectly on a workpiece to be processed, wherein at least one pressure chamber of the working cylinder for retracting and extending the piston is adapted to be subjected to a tank pressure or a supply pressure via a continuously adjustable valve, and comprising a valve assembly arranged upstream of the continuously adjustable valve, whereby an inlet port of the continuously adjustable valve may be subjected to a higher or lower supply pressure, wherein the valve assembly comprises a switching valve adapted to be switched over between a basic position and a switching position in dependence on the load pressure at the working cylinder in order to tap the supply pressure from a low-pressure source or from a high-pressure source.
    • 所公开的是一种用于冲裁或成型机的液压驱动机构,其包括具有多个压力室的工作缸,该工作缸的活塞直接或间接地作用在待加工的工件上,其中用于回缩的工作缸的至少一个压力室 并且延伸的活塞适于经由连续可调节的阀进行罐压力或供给压力,并且包括设置在连续可调节阀的上游的阀组件,由此可连续调节的阀的入口可以经受 更高或更低的供应压力,其中阀组件包括适于根据工作气缸处的负载压力在基本位置和开关位置之间切换的切换阀,以便从低压源 或来自高压源。
    • 8. 发明授权
    • Optical sensor for measuring the distance and/or inclination of a surface
    • 用于测量表面的距离和/或倾斜度的光学传感器
    • US06856388B2
    • 2005-02-15
    • US10048334
    • 2001-05-10
    • Stefan Schmidt
    • Stefan Schmidt
    • G01B11/00G01B11/02G01B11/24G01B11/26
    • G01B11/24G01B11/026
    • An optical sensor for measuring the distance and/or inclination of a surface, particularly relative to a reference plane, or for detecting the distance and/or change in inclination of a surface, wherein a light spot is generated on a detector in that a light beam that is collimated in a first direction is focused in a direction perpendicular to the first direction, so that a line focus is effected along the first direction on the surface and the line focus is imaged on the detector in the second direction and, at the same time, the beam that is reflected at the surface and collimated in the first direction is focused on the detector, wherein the line focus is perpendicular to the reflection plane defined by the impinging, reflected beam.
    • 一种光学传感器,用于测量表面的距离和/或倾斜度,特别是相对于参考平面,或用于检测表面的距离和/或倾斜度的变化,其中在检测器上产生光斑,因为光 沿第一方向准直的光束在垂直于第一方向的方向上被聚焦,使得沿着表面上的第一方向实现线对焦,并且在第二方向上将线焦点成像在检测器上,并且在 同时,在表面反射并沿第一方向准直的光束聚焦在检测器上,其中线焦点垂直于由入射的反射光束限定的反射平面。
    • 9. 发明授权
    • Method and array for detecting the position of a plane scanned with a laser scanner
    • 用于检测用激光扫描器扫描的平面的位置的方法和阵列
    • US06594006B1
    • 2003-07-15
    • US09744122
    • 2001-03-16
    • Dirk MuehlhoffGuenther RudolphStefan SchmidtGerhard DoeringGuenter BerthelThomas Hartmann
    • Dirk MuehlhoffGuenther RudolphStefan SchmidtGerhard DoeringGuenter BerthelThomas Hartmann
    • G01B1126
    • G05B19/402G05B2219/37558G05B2219/37563G05B2219/50028G05B2219/50133G05D3/12
    • A method and an arrangement for detecting the position of the plane XY of an object, which plane XY is to be scanned, and for its positioning in the focal plane X′Y′ of a laser scanner, preferably for a laser scanning microscope. According to the disclosure, it is provided in a method of the type described above that, after a rough orientation of the object carried out by placing on an object holder, a laser beam is directed successively in time to at least three different points P1, P2 . . . Pn located in the scan plane XY of the object and, in doing so, each of the reflections proceeding from the points P1, P2 . . . Pn is imaged on a position-sensitive detector, an actual position value is determined at the detector for each reflection and is compared with a stored reference position value, adjustment commands for changing the inclination of the object holder are obtained from the deviations of the actual position values from the reference position values, and the inclination of the object holder is changed on the basis of these adjustment commands until points P1, P2 . . . Pn are located in the focal plane X′Y′ of the laser scanner.
    • 一种用于检测物体的平面XY的位置的方法和装置,该平面XY将被扫描平面XY,并且用于其定位在激光扫描仪的焦平面X'Y'中,优选地用于激光扫描显微镜。 根据本发明,提供了一种上述类型的方法,在通过放置在物体保持器上进行物体的粗略取向之后,将激光束在时间上连续地指向至少三个不同点P1, P2。 。 。 Pn位于物体的扫描平面XY中,并且在这样做时,每个反射从点P1,P2进行。 。 。 Pn在位置敏感检测器上成像,在检测器处为每次反射确定实际位置值,并与存储的参考位置值进行比较,从实际的偏差获得用于改变物体保持器的倾斜度的调节命令 基准位置值的位置值,并且基于这些调整指令改变对象保持器的倾斜直到点P1,P2。 。 。 Pn位于激光扫描器的焦平面X'Y'中。