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    • 7. 发明授权
    • Optically activated sub-nanosecond hybrid pulser
    • 光学激活的亚纳秒级混合脉冲发生器
    • US5155352A
    • 1992-10-13
    • US797595
    • 1991-11-25
    • Anderson H. KimMaurice WeinerRobert J. YoumansRobert J. ZetoLouis J. Jasper, Jr.
    • Anderson H. KimMaurice WeinerRobert J. YoumansRobert J. ZetoLouis J. Jasper, Jr.
    • H01T2/00H02M9/00
    • H01T2/00
    • The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor material while the energy storage device comprises a radio transmission line including a different material, i.e. a dielectric storage medium. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch. A variation comprises the upper and lower metallization layers being formed in the shape of a plurality of discrete straight line segments or strips which extend radially outward from the center and thus forms a quasi-radial structure.
    • 耦合到能量存储装置的光电导开关的组合,其中开关由光电导半导体材料组成,而能量存储装置包括包括不同材料的无线电传输线,即电介质存储介质。 光电导半导体砷化镓开关嵌入在电介质材料的圆盘中,其中连续径向金属化的上层和下层构造成位于其上的圆形图案。 金属化的上层包括邻近开关的一个表面的有孔网格,而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面 半导体开关。 一种变型包括上部和下部金属化层形成为从中心径向向外延伸并由此形成准径向结构的多个离散的直线段或条带的形状。