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    • 2. 发明授权
    • Optically activated sub-nanosecond hybrid pulser
    • 光学激活的亚纳秒级混合脉冲发生器
    • US5155352A
    • 1992-10-13
    • US797595
    • 1991-11-25
    • Anderson H. KimMaurice WeinerRobert J. YoumansRobert J. ZetoLouis J. Jasper, Jr.
    • Anderson H. KimMaurice WeinerRobert J. YoumansRobert J. ZetoLouis J. Jasper, Jr.
    • H01T2/00H02M9/00
    • H01T2/00
    • The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor material while the energy storage device comprises a radio transmission line including a different material, i.e. a dielectric storage medium. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch. A variation comprises the upper and lower metallization layers being formed in the shape of a plurality of discrete straight line segments or strips which extend radially outward from the center and thus forms a quasi-radial structure.
    • 耦合到能量存储装置的光电导开关的组合,其中开关由光电导半导体材料组成,而能量存储装置包括包括不同材料的无线电传输线,即电介质存储介质。 光电导半导体砷化镓开关嵌入在电介质材料的圆盘中,其中连续径向金属化的上层和下层构造成位于其上的圆形图案。 金属化的上层包括邻近开关的一个表面的有孔网格,而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面 半导体开关。 一种变型包括上部和下部金属化层形成为从中心径向向外延伸并由此形成准径向结构的多个离散的直线段或条带的形状。
    • 6. 发明授权
    • Active microwave cavity for electron paramagnetic resonance (EPR)
apparatus
    • 用于电子顺磁共振(EPR)装置的主动微波腔
    • US4674513A
    • 1987-06-23
    • US783992
    • 1985-10-04
    • Louis J. Jasper, Jr.
    • Louis J. Jasper, Jr.
    • A61B6/10G01R33/345G01R33/60A61B6/00
    • G01R33/60A61B6/107G01R33/345
    • This disclosure relates to a microwave amplifier (22) having an active X-Band microwave cavity (33) for use in electron paramagnetic resonance (EPR) measurements on large, lossy, irradiated, samples such as a human finger. The amplifier comprises an input section (31), a drift section (32) and an output section (33) which is the aforementioned active microwave cavity. An electron beam is used to input RF energy into the cavity. The input and output section have small helical couplers (34) for coupling RF energy onto and off of the electron beam. The RF wave is essentially "trapped" in the cavity because of the non-reciprocal nature of the electron beam medium and because the guide (i.e., drift section) at the input to the cavity has dimensions such that the frequency of the RF microwave energy is below the guides lower cut-off frequency. Also, a frequency "locking" effect occurs in the output cavity. The input frequency can be varied from 1-2% yet the output frequency does not change. The active microwave cavity has a cylindrically shaped window (41) located at the back-end of the cavity which extends inward towards the region of high RF fields inside the cavity. A large, lossy, irradiated sample such as a finger can be inserted into or behind this window and analyzed for radiation damage.
    • 本公开涉及具有用于在大的,有损耗的,照射的样品(例如人的手指)上进行电子顺磁共振(EPR)测量的有源X波段微波腔(33)的微波放大器(22)。 放大器包括作为上述有源微波空腔的输入部分(31),漂移部分(32)和输出部分(33)。 电子束用于将RF能量输入腔内。 输入和输出部分具有小的螺旋耦合器(34),用于将RF能量耦合到电子束和/或离开电子束。 由于电子束介质的不可逆性质,射频波基本上被“捕获”在空腔中,并且由于在空腔的输入端处的引导(即,漂移部分)具有使得RF微波能量的频率 低于导轨下限截止频率。 此外,在输出腔中产生频率“锁定”效应。 输入频率可以从1-2%变化,但输出频率不变。 有源微波腔具有位于空腔后端的圆柱形窗口(41),该窗口向内延伸到空腔内的高RF场区域内。 可以将大的有损耗的被照射的样品(例如手指)插入到该窗口中或后面,并分析其辐射损伤。
    • 7. 发明授权
    • Transverse field interaction multibeam amplifier
    • 横向场相互作用多波束放大器
    • US4621218A
    • 1986-11-04
    • US640184
    • 1984-07-02
    • Louis J. Jasper, Jr.Charles M. DeSantisJames F. Baxendale
    • Louis J. Jasper, Jr.Charles M. DeSantisJames F. Baxendale
    • H01J25/34
    • H01J25/34
    • A transverse field interaction multi-beam amplifier device comprising a structure having, for example, a plurality of discrete cathodes cylindrically located in succession along a central axis of RF propagation. In registration with the cathodes are a respective number of annular collectors located within an outer cylinder which also acts as the structure housing. Intermediate the cathodes and collectors are two additional coaxial cylinders, one having a relatively smaller diameter than the other, with the smaller diameter cylinder including respective number of discrete grids, while the larger cylinder comprises a structure preferably having a rippled or undulating slow wave wall surface and a respective number of annular slots formed therein. The cathodes emit radial beams of electrons which pass through and are bunched by the grids and then accelerated by the slots to the collectors while interacting with and being modulated by an input RF beam propagating along the central axis of the coaxial structure between a first pair of cylinder walls including the grids and cathodes and inducing an output beam in a second pair of cylinder walls including the slots in the slow wave wall surface and the grids.
    • 一种横向场相互作用多光束放大器装置,其包括具有例如多个离散阴极的结构,所述阴极圆柱形地位于沿着RF传播的中心轴的位置。 与阴极对准的是位于外筒内的相应数量的环形集料器,其也用作结构外壳。 中间阴极和集电器是两个额外的同轴圆柱体,一个具有相对较小直径的同轴圆柱体,较小直径的圆柱体包括相应数量的离散格栅,而较大圆柱体包括优选地具有波纹或波浪形的慢波壁表面的结构 以及形成在其中的相应数量的环形槽。 阴极发射通过的电子的径向束,并且被栅格聚束,然后由槽加速到集电器,同时与沿同轴结构的中心轴传播的输入RF光束相互作用并被第一对 包括栅极和阴极的气缸壁,并且在包括缓慢波壁表面和网格中的狭槽的第二对气缸壁中引出输出光束。
    • 8. 发明授权
    • Ultra-wideband photonic band gap crystal having selectable and
controllable bad gaps and methods for achieving photonic band gaps
    • 具有可选择和可控带隙的超宽带光子带隙晶体以及用于实现光子带隙的方法
    • US5739796A
    • 1998-04-14
    • US550040
    • 1995-10-30
    • Louis J. Jasper, Jr.Lawrence CarinK. Ming Leung
    • Louis J. Jasper, Jr.Lawrence CarinK. Ming Leung
    • H01Q3/44H01Q9/27H01Q15/00H01Q1/36
    • H01Q15/006H01Q3/44H01Q9/27
    • The present invention provides multidimensional stacked photonic band gap crystal structures improving the performance of current planar monolithic antennas and RF filters by forbidding radiation from coupling into the substrate thereby significantly enhancing radiation efficiency and bandwidth. This invention comprises a number of sub-crystals with each having at least two lattices disposed within a host material, each lattice having a plurality of dielectric pieces arranged and spaced from each other in a predetermined manner, the sub-crystals being stacked in a crystal structure to provide a photonic band gap forbidding electromagnetic radiation propagating over a specially designed frequency band gap, or stopband. Both two dimensional and multidimensional crystals are disclosed. The preferred embodiment is a three-dimensional photonic band gap crystal comprising two or more sub-crystals, with each sub-crystal having a diamond-patterned lattice constructed from a plurality of dielectric zigzag pieces orthogonally interconnected, disposed within a host material.
    • 本发明提供多维堆叠光子带隙晶体结构,通过禁止辐射耦合到衬底中,从而显着提高辐射效率和带宽,从而提高了当前平面单片天线和RF滤波器的性能。 本发明包括多个子晶体,每个子晶体具有设置在主体材料中的至少两个晶格,每个晶格具有以预定方式彼此排列并间隔开的多个电介质片,所述子晶体堆叠在晶体中 结构提供光子带隙,禁止在专门设计的频带或阻带上传播的电磁辐射。 公开了二维和多维晶体。 优选实施例是包括两个或更多个子晶体的三维光子带隙晶体,其中每个子晶体具有由多个正交互连的,设置在主体材料内的电介质锯齿形构造的菱形图案晶格。