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1. 发明授权

US5153442A High power, solid state RF pulse generators 失效
标题翻译：大功率，固态射频脉冲发生器
公开(公告)号：US5153442A
公开(公告)日：1992-10-06
申请号：US637384
申请日：1991-01-03
申请人： Lawrence J. Bovino , Maurice Weiner , Anderson H. Kim
发明人： Lawrence J. Bovino , Maurice Weiner , Anderson H. Kim
IPC分类号： H03K3/57 , H03K17/78
CPC分类号： H03K17/78 , H03K3/57
摘要： A high power, solid state burst generator for producing RF pulses includes a plurality of transmission lines, such as coaxial cables, having one end connected across a load via a plurality of photoconductive switches, one for each line. The other end of the transmission lines are terminated in open ends and connected to a charging DC voltage. One set of lines is connected to a positive DC voltage +V while other set is connected to a negative DC voltage -V. A laser is coupled to one end of a plurality of fiber optic lines, each having a different length, for simultaneously launching switch pulses thereon. The other ends of the fiber optic lines are each coupled to a different one of the photoconductive switches for closing and opening the switches in a sequential fashion such that the lines are sequentially discharged through the load to generate a cyclic series of pulses.
摘要翻译：用于产生RF脉冲的大功率固态脉冲串发生器包括多条传输线，例如同轴电缆，其一端通过多个光导开关连接在负载上，每条线一条。传输线的另一端在开路端终止并连接到充电DC电压。一组线路连接到正的直流电压+ V，而另一组线路连接到负的直流电压-V。激光器耦合到多个光纤线路的一端，每条光纤线路具有不同的长度，用于同时在其上发射开关脉冲。光纤线路的另一端各自耦合到不同的一个感光开关，用于以顺序的方式闭合和断开开关，使得线路顺序地通过负载放电以产生循环的脉冲串。

2. 依法登记的发明

USH843H High power RF generation with optically activated bulk GaAs devices 失效
标题翻译：具有光学激活的大容量GaAs器件的高功率RF产生
公开(公告)号：USH843H
公开(公告)日：1990-11-06
申请号：US374105
申请日：1989-05-26
申请人： Anderson H. Kim , Maurice Weiner , Lawrence J. Bovino , Robert J. Youmans
发明人： Anderson H. Kim , Maurice Weiner , Lawrence J. Bovino , Robert J. Youmans
IPC分类号： G02B6/42 , H03K3/57 , H03K17/78
CPC分类号： H03K17/78 , G02B6/4295 , H03K3/57
摘要： Utilizing sections of charged transmission line cables and optically-actied semiconductor switches, the direct generation of high power RF is demonstrated.

3. 依法登记的发明

USH695H High energy optically controlled kilovolt semiconductor switch 失效
标题翻译：高能量光控千伏半导体开关
公开(公告)号：USH695H
公开(公告)日：1989-10-03
申请号：US111746
申请日：1987-10-23
申请人： Maurice Weiner , Lawrence J. Bovino , Terence Burke , Anderson H. Kim
发明人： Maurice Weiner , Lawrence J. Bovino , Terence Burke , Anderson H. Kim
IPC分类号： H01L27/144
CPC分类号： H01L27/1443
摘要： A high energy, optically controlled kilovolt semiconductor switch is provd including a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.

4. 发明授权

US5515066A Photon-triggered RF radiator using bulk type switching 失效
标题翻译：光子触发射频辐射器采用批量类型切换
公开(公告)号：US5515066A
公开(公告)日：1996-05-07
申请号：US340917
申请日：1994-11-17
申请人： Anderson H. Kim , Leo D. Didomenico
发明人： Anderson H. Kim , Leo D. Didomenico
IPC分类号： H01Q1/36 , H01Q3/24
CPC分类号： H01Q1/36 , H01Q3/24
摘要： A photon triggered RF radiator that is composed of a photoconductive subste having a ground plane electrode on its bottom surface and a top surface electrode having separate sections to perform energy storage and energy radiation functions. The energy storage section has a bulk-type photoconductive switch position therein such that any energy stored in the energy storage section of the top surface electrode is instantaneously discharged through the substrate to the ground plane, thus causing a pulse of nanosecond pulsewidth dimension to radiate from the energy radiation section of the top surface electrode.
摘要翻译：光电触发RF辐射体，其由其底表面上具有接地平面电极的光电导基板和具有分开部分的顶表面电极组成，以执行能量储存和能量辐射功能。能量存储部分具有体积型光导开关位置，使得存储在顶表面电极的能量存储部分中的任何能量通过衬底被瞬时放电到接地平面，从而使纳秒脉冲宽度尺寸的脉冲从上表面电极的能量辐射部分。

5. 发明授权

US5491490A Photon-triggered RF radiator having discrete energy storage and energy radiation sections 失效
标题翻译：具有离散能量存储和能量辐射部分的光子触发RF辐射器
公开(公告)号：US5491490A
公开(公告)日：1996-02-13
申请号：US344801
申请日：1994-11-23
申请人： Anderson H. Kim , Robert J. Youmans , Stephen E. Saddow , Louis J. Jasper, Jr. , Maurice Weiner
发明人： Anderson H. Kim , Robert J. Youmans , Stephen E. Saddow , Louis J. Jasper, Jr. , Maurice Weiner
IPC分类号： H01Q1/36 , H01Q9/27
CPC分类号： H01Q1/36 , H01Q9/27
摘要： A photon triggered RF radiator having separate sections to perform the eny storage and the energy radiation functions. The energy storage function is performed by at least one charging electrode positioned on the upper surface of a photoconductive dielectric substrate, whereas the energy radiation function is performed by a charging electrode positioned adjacent to the charging electrode on the upper surface of the substrate. The charging electrode and the radiating electrode are separated by a predetermined gap distance that is large enough to insure there is no surface flashover between the electrodes and small enough to insure the efficiency of energy discharge from the charging pad to the spiral antenna is maximized.
摘要翻译：具有独立部分以执行能量存储和能量辐射功能的光子触发RF辐射器。能量存储功能由位于光电导介质基板的上表面上的至少一个充电电极执行，而能量辐射功能由位于基板上表面上与充电电极相邻的充电电极执行。充电电极和辐射电极分开一个足够大的预定间隙距离，以确保电极之间没有表面闪络，并且足够小以确保从充电垫到螺旋天线的能量放电的效率最大化。

6. 依法登记的发明

USH1443H Optically activated multi-frequency high power RF generation utilizing a wafer-scale Si-GaAs substrate 失效
标题翻译：采用晶圆级Si-GaAs衬底的光纤激光多频高功率射频发生器
公开(公告)号：USH1443H
公开(公告)日：1995-06-06
申请号：US822453
申请日：1992-01-17
申请人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Thomas E. Koscica , Robert J. Youmans
发明人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Thomas E. Koscica , Robert J. Youmans
IPC分类号： H01Q3/26 , F21V1/00 , H01Q11/10
CPC分类号： H01Q3/2676
摘要： A device for radiating pulses of radio frequency energy in response to pulses of laser light in which a metal layer is ohmically bonded to one side of a substrate of semiconductor material and an antenna is ohmically bonded to the other side of the substrate, there being at least one aperture in the metal layer for permitting laser light to reach the disk.

7. 发明授权

US5280168A Tapered radial transmission line for an optically activated hybrid pulser 失效
标题翻译：用于光学激活混合脉冲发生器的锥形径向传输线
公开(公告)号：US5280168A
公开(公告)日：1994-01-18
申请号：US797593
申请日：1991-11-25
申请人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans
发明人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans
IPC分类号： H03K3/57 , H03K17/78 , H01J40/14
CPC分类号： H03K17/78 , H03K3/57
摘要： The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor switch while the energy storage device comprises a tapered radio transmission line. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material having a thickness dimension which reduces linearly outward from the center, with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch.
摘要翻译：耦合到能量存储装置的光电开关的组合，其中开关由光电导半导体开关构成，而能量存储装置包括锥形无线电传输线。光电导半导体砷化镓开关嵌入电介质材料的圆盘中，其具有从中心线性向外减小的厚度尺寸，其中连续径向金属化的上层和下层构造成位于其上的圆形图案。金属化的上层包括邻近开关的一个表面的有孔网格，而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面半导体开关。

8. 发明授权

US5262657A Optically activated wafer-scale pulser with AlGaAs epitaxial layer 失效
标题翻译：具有AlGaAs外延层的光学激活晶片级脉冲发生器
公开(公告)号：US5262657A
公开(公告)日：1993-11-16
申请号：US825365
申请日：1992-01-24
申请人： Anderson H. Kim , Robert J. Youmans , Maurice Weiner , Robert J. Zeto , Louis J. Jasper, Jr.
发明人： Anderson H. Kim , Robert J. Youmans , Maurice Weiner , Robert J. Zeto , Louis J. Jasper, Jr.
IPC分类号： G02B6/42 , H01L31/08 , H01L33/00 , H01J40/14
CPC分类号： G02B6/4295 , H01L31/08
摘要： A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.
摘要翻译：一种用于响应于激光脉冲产生射频能量脉冲的装置，其中GaAs的圆形晶片通过外延GaAs层金属化地与晶片方向结合的环形层，以及AlGaAs的外延层在其中一个的中心激光将要被引导的环形外延层，在与AlGaAs外延层接触的金属化层中存在多个孔。此外，AlGaAs外延层可以形成为与第一AlGaAs层相对，并且使光纤与其接触，使得可以在晶片的两侧引入激光。

9. 发明授权

US5227621A Ultra-wideband high power photon triggered frequency independent radiator 失效
标题翻译：超宽带高功率光子触发频率独立散热器
公开(公告)号：US5227621A
公开(公告)日：1993-07-13
申请号：US946718
申请日：1992-09-18
申请人： Anderson H. Kim , Leo D. Didomenico , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans , Thomas E. Koscica
发明人： Anderson H. Kim , Leo D. Didomenico , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans , Thomas E. Koscica
IPC分类号： G01S7/282 , G01S13/02 , H03K3/57
CPC分类号： H03K3/57 , G01S13/0209 , G01S7/282
摘要： A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two quasi-radial transmission line including a different material, i.e. a dielectric storage medium. The photoconductive semiconductor gallium arsenide switch is electrically connected to two quasi-radial transmission lines formed in part by layers of metallization configured in a quasi-radially shaped pattern upon the energy storage device. A variation comprises a photoconductive semiconductor gallium arsenide wafer sandwiched between two quasi-radial transmission lines so that the semiconductor gallium arsenide wafer serves as substrate, energy storage medium, and photoconductive switch.
摘要翻译：耦合到能量存储装置的光电导开关，其中开关由光导半导体材料组成，而能量存储装置包括包括不同材料即电介质存储介质的两个准径向传输线。光电导半导体砷化镓开关电连接到在能量存储装置上以准径向成形图案构成的部分金属化层形成的两个准径向传输线。变型包括夹在两个准径向传输线之间的光导半导体砷化镓晶片，使得半导体砷化镓晶片用作衬底，能量存储介质和光电导开关。

10. 发明授权

US5148251A Photoconductive avalanche GaAs switch 失效
标题翻译：光电导雪崩GaAs开关
公开(公告)号：US5148251A
公开(公告)日：1992-09-15
申请号：US797592
申请日：1991-11-25
申请人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans
发明人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans
IPC分类号： H01L31/101 , H01L31/105 , H01L31/107 , H03K17/78
CPC分类号： H01L31/107 , H01L31/101 , H01L31/105 , H03K17/78
摘要： An optically activated avalanche GaAs switch having two opposing optical windows for receiving optical energy from an illumination source which may be, for example, a laser diode operating at a 1.06 micron wavelength. The switch is a semiconductor PIN structure including a substrate of intrinsic GaAs material within which is formed opposing highly doped deep recessed p+ and n+GaAs layers underlying a pair of ohmic contacts including outer annular layers of metallization which surround respective centrally located optical windows formed of AlGaAs. By illuminating the switch from opposite sides through the optical windows, electron-hole pairs are generated and a condition for an avalanche mode of operation is created in the center region of the device rendering it conductive.
摘要翻译：一种光学活化的雪崩GaAs开关，具有两个相对的光学窗口，用于从照明源接收光能，所述照明源可以是例如以1.06微米波长工作的激光二极管。该开关是包括本征GaAs材料的衬底的半导体PIN结构，其内部形成有相对于一对欧姆接触器下方的高掺杂深凹陷p +和n + GaAs层，其包括外部环形金属化层，该外部环形金属层环绕相应的位于中心的光学窗口， AlGaAs。通过从相对侧通过光学窗口照明开关，产生电子 - 空穴对，并且在器件的中心区域中产生雪崩模式操作的条件使其导电。

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