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1. 发明申请

US20120156124A1 Single Wall Carbon Nanotubes By Atmospheric Chemical Vapor Deposition 审中-公开
标题翻译：单壁碳纳米管通过大气化学气相沉积
公开(公告)号：US20120156124A1
公开(公告)日：2012-06-21
申请号：US12029856
申请日：2008-02-12
申请人： Amit Goyal , Iqbal Zafar
发明人： Amit Goyal , Iqbal Zafar
IPC分类号： D01F9/12 , B82B1/00 , B82B3/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/02
摘要： The present disclosure provides for systems and methods for producing carbon nanotubes. More particularly, the present disclosure provides for improved systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using a carbon source in the presence of a catalyst. In exemplary embodiments, the present disclosure provides for improved systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using carbon monoxide (CO) disproportionation in the presence of a catalyst composition on a catalyst support material. In one embodiment, the present disclosure provides for systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using carbon monoxide (CO) disproportionation with CO pressure from about 0.20 atm to about 1.0 atm in the presence of a cobalt/molybdenum catalyst composition on a magnesium oxide catalyst support.
摘要翻译：本公开提供了用于生产碳纳米管的系统和方法。更具体地，本公开提供了通过在催化剂存在下使用碳源的化学气相沉积（CVD）来制备单壁碳纳米管（SWNT）的改进的系统和方法。在示例性实施例中，本公开提供了在催化剂载体材料上的催化剂组合物存在下使用一氧化碳（CO）歧化，通过化学气相沉积（CVD）制备单壁碳纳米管（SWNT）的改进的系统和方法。在一个实施方案中，本公开提供了通过化学气相沉积（CVD）使用一氧化碳（CO）歧化制备单壁碳纳米管（SWNT）的系统和方法，其中CO压力为约0.20atm至约1.0atm，在氧化镁催化剂载体上的钴/钼催化剂组合物。

2. 发明申请

US20150087327A1 Contextually Aware Mobile Device 审中-公开
标题翻译：上下文感知移动设备
公开(公告)号：US20150087327A1
公开(公告)日：2015-03-26
申请号：US14033482
申请日：2013-09-22
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H04W4/02
CPC分类号： H04W12/08 , G01C21/36 , G01S19/34 , H04W4/027 , H04W64/006
摘要： A method for determining if a mobile device is in a vehicle includes monitoring an acceleration of the mobile device for a time interval during a period of time. The method also includes calculating one or more characteristics of the acceleration of the mobile device during the time interval and comparing the one or more characteristics of the acceleration to a set of threshold values. The method further includes determining the state of the mobile device based on the comparison of the one or more characteristics of the acceleration to the set of threshold values, wherein the state of the mobile device includes an in-vehicle state, a non-vehicle state.
摘要翻译：一种用于确定移动设备是否在车辆中的方法包括在一段时间内监视移动设备的加速度一段时间间隔。该方法还包括在时间间隔期间计算移动设备的加速度的一个或多个特性，并将加速度的一个或多个特性与一组阈值进行比较。该方法还包括基于加速度的一个或多个特征与阈值集合的比较来确定移动设备的状态，其中移动设备的状态包括车载状态，非车辆状态。

3. 发明授权

US08795854B2 Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates 有权
标题翻译：基于半导体的大面积，灵活的电子器件，在{110} <100>取向基板上
公开(公告)号：US08795854B2
公开(公告)日：2014-08-05
申请号：US12079068
申请日：2008-03-25
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H01L31/09 , H01L29/04 , B32B9/00 , B32B15/04 , H01L31/0392 , H01L31/036 , H01L21/02 , H01L31/0687 , B82Y10/00 , H01L31/18 , H01L29/786
CPC分类号： H01L21/02425 , B82Y10/00 , H01L21/02433 , H01L21/02439 , H01L21/02488 , H01L21/02491 , H01L21/0251 , H01L21/02521 , H01L21/02524 , H01L21/02538 , H01L29/78603 , H01L29/78681 , H01L29/7869 , H01L31/036 , H01L31/0392 , H01L31/03925 , H01L31/03928 , H01L31/0687 , H01L31/1872 , Y02E10/541 , Y02E10/544 , Y02P70/521
摘要： Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
摘要翻译：公开了制造相同的新型制品和方法，从而在{110} <100>有纹理的衬底上产生柔性的，取向的，基于半导体的电子器件。所得物品的潜在应用是在光伏器件，平板显示器，热光伏器件，铁电器件，发光二极管器件，计算机硬盘驱动器件，基于磁阻的器件，基于光致发光的器件，非易失性存储器件，介质器件，热电装置和量子点激光装置。

4. 发明申请

US20120309632A1 FACETED CERAMIC FIBERS, TAPES OR RIBBONS AND EPITAXIAL DEVICES THEREFROM 有权
标题翻译：表面陶瓷纤维，胶带或胶带及其外观设备
公开(公告)号：US20120309632A1
公开(公告)日：2012-12-06
申请号：US13529410
申请日：2012-06-21
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H01B12/08 , H01B12/06 , H01B12/00 , D01F9/08
CPC分类号： H01L39/2461 , C30B15/34 , C30B29/16 , C30B29/20 , C30B29/24 , C30B29/32 , C30B29/607 , C30B29/64 , H01L21/0242 , H01L21/02436 , H01L21/02521 , H01L39/2458 , Y10S505/701 , Y10S505/704 , Y10T428/2924 , Y10T428/2958 , Y10T428/2964 , Y10T428/2973
摘要： A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.
摘要翻译：结晶制品包括单晶陶瓷纤维，带或带。纤维，胶带或带子沿其长度具有至少一个晶面，其通常至少一米长。在蓝宝石的情况下，刻面是R平面，M平面，C平面或A平面。可以在纤维，带或带上形成包括超导物品在内的外延制品。

5. 发明申请

US20120264615A1 CHEMICAL SOLUTION SEED LAYER FOR RABITS TAPES 有权
标题翻译：化学解决方案用于RABITS TAPES的种子层
公开(公告)号：US20120264615A1
公开(公告)日：2012-10-18
申请号：US13088182
申请日：2011-04-15
申请人： Amit Goyal , Mariappan Parans Paranthaman , Sung Hun Wee
发明人： Amit Goyal , Mariappan Parans Paranthaman , Sung Hun Wee
IPC分类号： H01L39/24 , C30B19/00
CPC分类号： H01B12/00 , C30B5/00 , C30B29/22 , C30B29/225 , H01L39/126 , H01L39/24 , H01L39/2425 , H01L39/2461
摘要： A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.
摘要翻译：制造超导制品的方法包括提供双轴织构化基底的步骤。然后沉积种子层。种子层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的稀土或过渡金属阳离子。外延生长超导体层，使得超导体层由种子层支撑。

6. 发明授权

US08257566B2 Nanotube device and method of fabrication 有权
标题翻译：纳米管装置及其制造方法
公开(公告)号：US08257566B2
公开(公告)日：2012-09-04
申请号：US13162163
申请日：2011-06-16
申请人： Reginald C. Farrow , Zafar Iqbal , Amit Goyal , Sheng Liu
发明人： Reginald C. Farrow , Zafar Iqbal , Amit Goyal , Sheng Liu
IPC分类号： C25B7/00
CPC分类号： C25D13/04 , B82Y15/00 , B82Y30/00 , C25D13/20 , G01N27/4146 , Y10S977/72 , Y10S977/957 , Y10S977/958
摘要： A nanotube device and a method of depositing nanotubes for device fabrication are disclosed. The method relates to electrophoretic deposition of nanotubes, and allows a control of the number of deposited nanotubes and positioning within a defined region.
摘要翻译：公开了一种用于器件制造的纳米管器件和沉积纳米管的方法。该方法涉及纳米管的电泳沉积，并且允许控制沉积的纳米管的数量和在限定区域内的定位。

7. 发明授权

US08178221B2 {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices 有权
标题翻译：基于半导体，大面积，灵活的电子设备的{100} <100>或45°旋转{100} <100>
公开(公告)号：US08178221B2
公开(公告)日：2012-05-15
申请号：US12011450
申请日：2008-01-28
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H01L29/04 , H01L31/09 , B32B9/00
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02425 , H01L21/02433 , H01L21/02439 , H01L21/02463 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02516 , H01L21/02521 , H01L21/02543
摘要： Novel articles and methods to fabricate the same resulting in flexible, {100} or 45°-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
摘要翻译：公开了制造相同的新型制品和方法，产生了柔性的{100} <100>或45°旋转{100} <100>取向的基于半导体的电子器件。所得物品的潜在应用是在光伏器件，平板显示器，热光伏器件，铁电器件，发光二极管器件，计算机硬盘驱动器件，基于磁阻的器件，基于光致发光的器件，非易失性存储器件，介质器件，热电装置和量子点激光装置。

8. 发明授权

US07736979B2 Method of forming nanotube vertical field effect transistor 失效
标题翻译：形成纳米管垂直场效应晶体管的方法
公开(公告)号：US07736979B2
公开(公告)日：2010-06-15
申请号：US11765788
申请日：2007-06-20
申请人： Reginald Conway Farrow , Amit Goyal
发明人： Reginald Conway Farrow , Amit Goyal
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0048 , Y10S977/938
摘要： A nanotube field effect transistor and a method of fabrication are disclosed. The method includes electrophoretic deposition of a nanotube to contact a region of a conductive layer defined by an aperture. Embodiments of the present disclosure provide a method of depositing nanotubes in a region defined by an aperture, with control over the number of nanotubes to be deposited, as well as the pattern and spacing of nanotubes. For example, electrophoretic deposition, along with proper configuration of the aperture, allows at least one nanotube to be deposited in a target region with nanometer scale precision. Pre-sorting of nanotubes, e.g., according to their geometries or other properties, may be used in conjunction with embodiments of the present disclosure to facilitate fabrication of devices with specific performance requirements.
摘要翻译：公开了一种纳米管场效应晶体管及其制造方法。该方法包括电泳沉积纳米管以接触由孔限定的导电层的区域。本公开的实施例提供了一种在由孔限定的区域中沉积纳米管的方法，控制要沉积的纳米管的数量，以及纳米管的图案和间隔。例如，电泳沉积以及孔的适当构造允许至少一个纳米管以纳米级精度沉积在目标区域中。可以结合本公开的实施例使用例如根据其几何形状或其他性质对纳米管进行预分选，以便于制造具有特定性能要求的装置。

9. 发明申请

US20080217622A1 Novel, semiconductor-based, large-area, flexible, electronic devices 有权
标题翻译：新型，半导体，大面积，灵活的电子设备
公开(公告)号：US20080217622A1
公开(公告)日：2008-09-11
申请号：US11715047
申请日：2007-03-08
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H01L29/04
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02491 , H01L21/02521 , H01L21/02568 , H01L21/02609 , H01L31/036 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/03926 , Y02E10/541 , Y02P70/521
摘要： Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
摘要翻译：公开了制造相同产生柔性，大面积，三轴纹理化，单晶或单晶体，半导体的电子器件的新型制品和方法。所得物品的潜在应用是在光伏器件，平板显示器，热光伏器件，铁电器件，发光二极管器件，计算机硬盘驱动器件，基于磁阻的器件，基于光致发光的器件，非易失性存储器件，介质器件，热电装置和量子点激光装置。

10. 发明授权

US07258928B2 Doped Y2O3 buffer layers for laminated conductors 失效
公开(公告)号：US07258928B2
公开(公告)日：2007-08-21
申请号：US11192488
申请日：2005-07-29
申请人： Mariappan Parans Paranthaman , Urs Schoop , Amit Goyal , Cornelis Leo Hans Thieme , Darren T. Verebelyi , Martin W. Rupich
发明人： Mariappan Parans Paranthaman , Urs Schoop , Amit Goyal , Cornelis Leo Hans Thieme , Darren T. Verebelyi , Martin W. Rupich
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： C23C14/083 , H01L39/2461
摘要： A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y2O3 and a dopant for blocking cation diffusion through the Y2O3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

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