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1. 发明授权

US09837179B2 Electrically conductive thin films 有权
公开(公告)号：US09837179B2
公开(公告)日：2017-12-05
申请号：US14940223
申请日：2015-11-13
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kimoon Lee , Sang Il Kim , Se Yun Kim , Sung Woo Hwang , Woojin Lee , Hee Jung Park , Yoon Chul Son , Hyosug Lee , Doh Won Jung , Youngjin Cho , Jae-Young Choi
IPC分类号： H01B1/02 , H01B1/06 , C30B29/60 , C30B7/00 , C01B19/00 , C30B29/46 , H01L21/02
CPC分类号： H01B1/02 , C01B19/002 , C01B19/007 , C01P2002/20 , C01P2002/30 , C01P2002/90 , C30B7/00 , C30B29/46 , C30B29/60 , C30B29/605 , C30B29/607 , H01B1/06 , H01L21/02417 , H01L21/02573 , H01L21/02609
摘要： An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.

2. 发明授权

US09732435B2 Group 13 nitride crystal and group 13 nitride crystal substrate 有权
公开(公告)号：US09732435B2
公开(公告)日：2017-08-15
申请号：US13609077
申请日：2012-09-10
申请人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
发明人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
IPC分类号： C30B29/40 , C30B7/10 , C30B9/00 , C30B29/60
CPC分类号： C30B7/105 , C30B9/00 , C30B29/403 , C30B29/406 , C30B29/607
摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

3. 发明授权

US09481930B2 Fabrication of diamond shells 有权
标题翻译：钻石壳的制作
公开(公告)号：US09481930B2
公开(公告)日：2016-11-01
申请号：US11584205
申请日：2006-10-20
申请人： Alex V. Hamza , Juergen Biener , Christoph Wild , Eckhard Woerner
发明人： Alex V. Hamza , Juergen Biener , Christoph Wild , Eckhard Woerner
IPC分类号： F16C33/00 , C23C16/458 , B43K1/08 , C04B35/52 , C23C16/01 , C23C16/27 , C23C16/44 , C30B25/12 , C30B25/18 , C30B29/04 , C30B35/00 , C30B29/60 , G21B1/19 , G02B1/02
CPC分类号： C23C16/458 , B22F2998/00 , B43K1/082 , C04B35/52 , C04B2235/427 , C04B2235/6028 , C04B2235/94 , C04B2235/95 , C04B2235/963 , C04B2235/9661 , C23C16/01 , C23C16/271 , C23C16/272 , C23C16/274 , C23C16/4417 , C30B25/12 , C30B25/18 , C30B29/04 , C30B29/607 , C30B35/00 , G02B1/02 , G21B1/19 , Y02E30/16 , B22F1/0051 , B22F1/02 , B22F9/28
摘要： A novel method for fabricating diamond shells is introduced. The fabrication of such shells is a multi-step process, which involves diamond chemical vapor deposition on predetermined mandrels followed by polishing, microfabrication of holes, and removal of the mandrel by an etch process. The resultant shells of the present invention can be configured with a surface roughness at the nanometer level (e.g., on the order of down to about 10 nm RMS) on a mm length scale, and exhibit excellent hardness/strength, and good transparency in the both the infra-red and visible. Specifically, a novel process is disclosed herein, which allows coating of spherical substrates with optical-quality diamond films or nanocrystalline diamond films.
摘要翻译：介绍了一种制作金刚石壳的新方法。这种壳的制造是多步骤方法，其包括在预定心轴上进行金刚石化学气相沉积，随后抛光，微孔加工，以及通过蚀刻工艺去除心轴。本发明的所得壳可以以毫米长度尺度配置在纳米级的表面粗糙度（例如，大约低达10nm RMS），并且表现出优异的硬度/强度，并且在红外和可见。具体地，本文公开了一种新颖的方法，其允许用光学质量金刚石膜或纳米晶体金刚石膜涂覆球形基底。

4. 发明申请

US20150107508A1 Polycrystalline Silicon Rod 审中-公开
标题翻译：多晶硅棒
公开(公告)号：US20150107508A1
公开(公告)日：2015-04-23
申请号：US14383577
申请日：2013-02-27
申请人： Tokuyama Corporation
发明人： Haruyuki Ishida , Tetsuya Imura , Yasumasa Aimoto
IPC分类号： C30B29/66 , C30B15/00 , C30B11/02 , C30B29/06
CPC分类号： C30B29/66 , C01B33/035 , C30B11/02 , C30B15/00 , C30B29/06 , C30B29/607 , Y10T428/12674
摘要： A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 μm or greater is 20% or more of the crystal observed at the face, excluding the core line portion.
摘要翻译：多晶硅棒由径向环绕硅芯线的多晶硅形成，其特征在于，在相对于圆柱形棒的轴向方向为垂直切割的截面中，由粗糙度覆盖的表面积的比率直径为50μm以上的结晶粒子除了芯线部分以外，在面部观察到的结晶的20％以上。

5. 发明申请

US20090047538A1 Method for Production of a Bead Single Crystal 审中-公开
标题翻译：珠单晶的生产方法
公开(公告)号：US20090047538A1
公开(公告)日：2009-02-19
申请号：US11988521
申请日：2006-07-05
申请人： Bert Voigtlaender , Udo Linke , Helmut Stollwerk
发明人： Bert Voigtlaender , Udo Linke , Helmut Stollwerk
IPC分类号： C22C5/00 , C30B13/00
CPC分类号： C30B13/22 , C30B11/00 , C30B13/00 , C30B29/607 , C30B29/66 , Y10T428/12014
摘要： A method for production of a bead single crystal includes heating at least one wire using electron beam heating to form the bead single crystal. The bead single crystal is advantageously produced by the electron beam heating of the at least one wire in vacuo. Bead single crystals comprising Ag, Al, Cr, Cu, Ir, Mo, Nb, Ni, Pd, Pt, Re, Rh, Ru, Ta, W or metal alloys, in particular, Ag/Au, Pt/Rh or Pt/Re alloys are advantageously produced by the method. The bead single crystals are preferably used in surface research, thin layer technology and electrochemistry.
摘要翻译：珠粒单晶的制造方法包括使用电子束加热来加热至少一根线，以形成珠粒单晶。珠子单晶有利地通过真空中的至少一根丝线的电子束加热产生。包含Ag，Al，Cr，Cu，Ir，Mo，Nb，Ni，Pd，Pt，Re，Rh，Ru，Ta，W或金属合金的珠单晶，特别是Ag / Au，Pt / Rh或Pt / Re合金有利地通过该方法制备。珠粒单晶优选用于表面研究，薄层技术和电化学。

6. 发明申请

US20060213427A1 Method for manufacturing granular silicon crystal 失效
标题翻译：颗粒状硅晶体的制造方法
公开(公告)号：US20060213427A1
公开(公告)日：2006-09-28
申请号：US11387624
申请日：2006-03-22
申请人： Shin Sugawara , Eigo Takahashi , Nobuyuki Kitahara , Yoshio Miura , Hisao Arimune
发明人： Shin Sugawara , Eigo Takahashi , Nobuyuki Kitahara , Yoshio Miura , Hisao Arimune
IPC分类号： C30B11/00 , C30B17/00 , C30B9/00 , C30B21/02 , C30B28/06
CPC分类号： C30B11/00 , C30B29/06 , C30B29/36 , C30B29/38 , C30B29/607 , Y10T117/1056
摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
摘要翻译：在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。

7. 发明申请

US20060138276A1 Dome 失效
标题翻译：圆顶
公开(公告)号：US20060138276A1
公开(公告)日：2006-06-29
申请号：US11152578
申请日：2005-06-14
申请人： Dov Tibi , Tsafrir Ben-Ari , Igal Finkelstein
发明人： Dov Tibi , Tsafrir Ben-Ari , Igal Finkelstein
IPC分类号： F41G7/00
CPC分类号： F42B10/46 , C30B29/20 , C30B29/607 , H01Q1/281 , H01Q1/42 , Y10T117/10
摘要： The present invention relates to process for producing a transparent missile dome having a spanning angle larger than 180°, comprising the step of: (a) growing from single crystals of a ceramic material a first dome portion, said first dome portion being a portion of a sphere (b) growing from single crystals of a ceramic material a second dome portion, said second dome portion being a complementary sphere-portion for said first dome portion (c) attaching said complementary dome portion to said first dome portion and to the body of the missile, thereby forming a missile with a front dome having a spanning angle larger than 180°
摘要翻译：本发明涉及具有跨越角度大于180°的透明导弹圆顶的制造方法，包括以下步骤：（a）从陶瓷材料的单晶生长第一圆顶部分，所述第一圆顶部分是一种从陶瓷材料的单晶生长的第二穹顶部分的球体（b），所述第二穹顶部分是用于所述第一穹顶部分（c）的互补球形部分，所述第一穹顶部分（c）将所述互补圆顶部分附接到所述第一穹顶部分和所述主体的导弹，从而形成具有大于180°的跨度角的前拱顶的导弹

8. 发明申请

US20040164277A1 Long persistent phosphors and persistent energy transfer technique 有权
标题翻译：长持久荧光粉和持久能量转移技术
公开(公告)号：US20040164277A1
公开(公告)日：2004-08-26
申请号：US10374696
申请日：2003-02-25
发明人： William M. Yen , Dongdong Jia , Weiyi Jia , Xiao-Jun Wang
IPC分类号： C09K011/08
CPC分类号： C09K11/7721 , C04B35/195 , C04B35/20 , C04B35/44 , C04B2235/3208 , C04B2235/3213 , C04B2235/3225 , C04B2235/3229 , C04B2235/3262 , C04B2235/6582 , C09K11/7749 , C09K11/7774 , C09K11/7792 , C30B13/00 , C30B29/20 , C30B29/22 , C30B29/34 , C30B29/607
摘要： The invention provides long-persistent phosphors, methods for their manufacture and phosphorescent articles. The invention also provides a method for generating a long-persistent phosphorescence at a selected color. The phosphors of the invention may be alkaline earth aluminates, alkaline earth silicates, and alkaline earth aluminosilicates. The phosphors include those activated by cerium. The phosphors also include those in which persistent energy transfer occurs from a donor ion to an acceptor ion, producing persistent emission largely characteristic of the acceptor ion.
摘要翻译：本发明提供长持久性荧光体，其制造方法和磷光制品。本发明还提供了一种用于产生所选颜色的长持续磷光的方法。本发明的磷光体可以是碱土金属铝酸盐，碱土金属硅酸盐和碱土金属硅铝酸盐。荧光体包括由铈活化的荧光体。荧光体还包括其中持续能量转移从供体离子发生到受体离子的那些，产生主要是受体离子特征的持久性发射。

9. 发明授权

US09765445B2 Branched nanowires and method of fabrication 有权
公开(公告)号：US09765445B2
公开(公告)日：2017-09-19
申请号：US14092720
申请日：2013-11-27
申请人： The Governors of the University of Alberta
发明人： Ryan Thomas Tucker , Allan Leo Beaudry , Joshua Michael LaForge , Michael Thomas Taschuk , Michael Julian Brett
IPC分类号： C03B11/12 , C30B11/12 , C30B29/66 , C30B29/60
CPC分类号： C30B11/12 , C30B29/607 , C30B29/66 , Y10T428/2922
摘要： A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.

10. 发明授权

US09371231B2 Apatite crystal 有权
标题翻译：磷灰石水晶
公开(公告)号：US09371231B2
公开(公告)日：2016-06-21
申请号：US14497553
申请日：2014-09-26
申请人： Koito Manufacturing Co., Ltd.
发明人： Kiminori Enomoto , Hisayoshi Daicho , Yu Shinomiya
IPC分类号： C01B25/455 , C01B25/32 , C30B29/14 , C30B29/60 , C30B7/10 , C30B9/12 , C30B15/00
CPC分类号： C01B25/455 , C01B25/32 , C01B25/321 , C30B7/10 , C30B9/12 , C30B15/00 , C30B29/14 , C30B29/607 , Y10T428/2975
摘要： An apatite crystal is a single crystal expressed by a general formula (M2)5(PO4)3X. In this formula, M2 indicates at least one type of element selected from the group consisting of bivalent alkaline-earth metals and Eu, and X indicates at least one type of element or molecule selected from the group consisting of halogen elements and OH. And the single crystal is of a tubular shape. The outer shape of the apatite may be a hexagonal prism. The shape of an opening of a hole formed in the upper surface or lower surface of the hexagonal prism may be a hexagon.
摘要翻译：磷灰石晶体是由通式（M2）5（PO4）3X表示的单晶。在该式中，M2表示选自二价碱土金属和Eu中的至少一种元素，X表示选自卤素元素和OH的至少一种元素或分子。单晶是管状的。磷灰石的外形可以是六棱柱。形成在六边形棱镜的上表面或下表面中的孔的形状可以是六边形。

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