专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07248491B1 Circuit for and method of implementing a content addressable memory in a programmable logic device 有权
标题翻译：在可编程逻辑器件中实现内容可寻址存储器的电路和方法
公开(公告)号：US07248491B1
公开(公告)日：2007-07-24
申请号：US11044746
申请日：2005-01-26
申请人： Alvin Y. Ching , Raymond C. Pang , Steven P. Young , Thanh Pham
发明人： Alvin Y. Ching , Raymond C. Pang , Steven P. Young , Thanh Pham
IPC分类号： G11C15/00
CPC分类号： G11C15/04 , G11C7/1075
摘要： According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.
摘要翻译：根据本发明的一个方面，公开了一种用于访问存储器中的数据的电路。电路通常包括具有读逻辑电路的第一端口和从存储器产生数据的第一输出。第二端口具有读逻辑电路和写逻辑电路。第二输出耦合到第二端口，并且还从存储器产生数据。公开了用于单独选择存储器的端口（例如随机存取存储器）的读取和写入宽度的电路。最后，公开了在可编程逻辑器件中实现内容可寻址存储器的其它实施例。此外，公开了一种访问存储器中的数据的方法。

2. 发明授权

US07242633B1 Memory device and method of transferring data in memory device 有权
标题翻译：存储器件和在存储器件中传送数据的方法
公开(公告)号：US07242633B1
公开(公告)日：2007-07-10
申请号：US11044740
申请日：2005-01-26
申请人： Alvin Y. Ching , Raymond C. Pang , Steven P. Young , Thanh Pham
发明人： Alvin Y. Ching , Raymond C. Pang , Steven P. Young , Thanh Pham
IPC分类号： G11C8/00
CPC分类号： H03K19/1776 , G11C7/1075 , G11C8/10 , G11C8/16 , G11C11/412 , G11C11/413 , G11C15/00
摘要： According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.
摘要翻译：根据本发明的一个方面，公开了一种用于访问存储器中的数据的电路。电路通常包括具有读逻辑电路的第一端口和从存储器产生数据的第一输出。第二端口具有读逻辑电路和写逻辑电路。第二输出耦合到第二端口，并且还从存储器产生数据。公开了用于单独选择存储器的端口（例如随机存取存储器）的读取和写入宽度的电路。最后，公开了在可编程逻辑器件中实现内容可寻址存储器的其它实施例。此外，公开了一种访问存储器中的数据的方法。

3. 外观设计

USD887130S1 Handbag set 有权
公开(公告)号：USD887130S1
公开(公告)日：2020-06-16
申请号：US29668661
申请日：2018-10-31
申请人： Thanh Pham
设计人： Thanh Pham
摘要： FIG. 1 is a front perspective view of a handbag set;
FIG. 2 is a front view thereof;
FIG. 3 is a back view thereof;
FIG. 4 is a right view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof;
FIG. 8 is a top view of the handbag set in a partially open position;
FIG. 9 is a front view thereof showing the first compartment partially open;
FIG. 10 is a back view thereof showing the second compartment partially open; and,
FIG. 11 is a top perspective view of the second compartment in a fully open position showing a cover for a semi circle removable mirror in an open or close position.
Broken lines in FIGS. 1-2 and 8 represent stitching.

4. 发明授权

US06181927B2 Sponsored call and cell service 失效
标题翻译：赞助电话和小区业务
公开(公告)号：US06181927B2
公开(公告)日：2001-01-30
申请号：US09024985
申请日：1998-02-17
申请人： James Brian Welling, Jr. , Sima Chiniwala , Stewart Hodde Maxwell , Thanh Pham , Anatoly Vaserfirer
发明人： James Brian Welling, Jr. , Sima Chiniwala , Stewart Hodde Maxwell , Thanh Pham , Anatoly Vaserfirer
IPC分类号： H04M342
CPC分类号： H04W4/06 , H04L67/04 , H04L67/18 , H04M3/42348 , H04M3/487 , H04M3/4878 , H04M15/8083 , H04M2207/18 , H04M2215/0184 , H04M2215/0192 , H04M2215/32 , H04Q3/0029 , H04Q2213/13524 , H04Q2213/13532 , H04Q2213/13546 , H04W4/02 , H04W76/10
摘要： In a telecommunications system, a subscriber station invokes a sponsored-call application service program when the subscriber station originates a call. Based upon certain criteria, service logic determines whether the call is sponsored or not. If sponsored, additional service logic utilizes the location of the call origination (i.e., location of the subscriber station) and/or other attributes of the subscriber station to select an announcement from a plurality of announcements for transmission to the subscriber station. After the announcement is transmitted (i.e., played), the subscriber station is connected to the call's desired destination. If not sponsored, the call is handled as a normal call.
摘要翻译：在电信系统中，当用户站发起呼叫时，用户台调用赞助呼叫应用服务程序。根据某些标准，服务逻辑确定呼叫是否被赞助。如果被赞助，附加服务逻辑利用呼叫发起的位置（即，用户台的位置）和/或用户台的其他属性来从多个通告中选择通知以传送到用户台。在通知（即播放）之后，用户站连接到呼叫所需的目的地。如果不赞助，则呼叫作为正常呼叫处理。

5. 发明授权

US6012600A Pressure responsive clamp for a processing chamber 失效
标题翻译：用于处理室的压力响应夹
公开(公告)号：US6012600A
公开(公告)日：2000-01-11
申请号：US590030
申请日：1996-02-02
申请人： Thanh Pham , Eugene Fukshansky , David Wanamaker
发明人： Thanh Pham , Eugene Fukshansky , David Wanamaker
IPC分类号： B65D45/18 , H01L21/687
CPC分类号： B65D45/18 , H01L21/687
摘要： A method and apparatus is provided which secures the lid of a processing chamber in abutting engagement with the walls of the chamber to form an airtight processing environment and which provides for the release of pressure within the chamber in the event of a sudden change in pressure such as an over pressure excursion. The method and apparatus generally comprise a clamp member having a base portion for mounting the clamp to a first surface, a contact portion for contacting a second surface and maintaining a desired relationship between the first and second surfaces, and a deflecting portion which allows separation of the first and second surfaces to relieve pressure behind the first or second surface and return to the desired relationship between the first and second surfaces.
摘要翻译：提供了一种方法和装置，其将处理室的盖与室的壁邻接地接合以形成气密处理环境，并且在压力突然变化的情况下提供室内压力的释放作为过度压力的旅行。所述方法和装置通常包括具有用于将夹具安装到第一表面的基部的夹持构件，用于接触第二表面并保持第一和第二表面之间期望的关系的接触部分和允许将第二表面分离的偏转部分所述第一和第二表面以减轻所述第一或第二表面后面的压力并返回到所述第一和第二表面之间的所需关系。

6. 发明授权

US5866795A Liquid flow rate estimation and verification by direct liquid measurement 失效
标题翻译：液体流量估算和直接液体测量验证
公开(公告)号：US5866795A
公开(公告)日：1999-02-02
申请号：US819593
申请日：1997-03-17
申请人： Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
发明人： Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
IPC分类号： G01L25/00
CPC分类号： G01F25/0007 , C23C16/4481 , G01F1/007 , G01F1/708 , G01F25/003 , G01F25/0038
摘要： An apparatus for controlling the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a purge gas supply, a carrier gas supply, a liquid flow meter, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A purge line is connected between the purge gas supply and the liquid flow meter and is used to trap a known mass of liquid precursor. To calibrate the flow of the liquid precursor, the purge gas is used to push the trapped liquid precursor through the liquid flow meter at a steady rate. The elapsed time for evacuating the trapped liquid precursor from the purge line is measured. Calibration information is computed using the mass of the trapped liquid precursor and the measured elapsed time based on the direct liquid measurement approach. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.
摘要翻译：用于控制液体前体流入沉积室的装置包括具有连接到沉积室上游的室入口管的液体注入口的液体注入系统。液体注入系统包括液体前体供应源，吹扫气体供应源，载气供应器，液体流量计和控制液体前体和载体气体流到腔室的控制器。吹扫管线连接在净化气体供应源和液体流量计之间，用于捕集已知质量的液体前体。为了校准液体前体的流动，吹扫气体以稳定的速率推动被捕获的液体前体通过液体流量计。测量从清除管线排出被捕获的液体前体的经过时间。基于直接液体测量方法，使用捕获的液体前体的质量和测量的经过时间计算校准信息。校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

7. 发明申请

US20110249198A1 Method for Generating a Unique Service Set Identifier on a Wireless Projector 有权
标题翻译：在无线投影机上生成唯一服务集标识符的方法
公开(公告)号：US20110249198A1
公开(公告)日：2011-10-13
申请号：US12758222
申请日：2010-04-12
申请人： Samuel D'Alessio , Thanh Pham
发明人： Samuel D'Alessio , Thanh Pham
IPC分类号： H04N9/31 , H04N7/173 , G06F15/177
CPC分类号： H04N5/74 , H04W8/005
摘要： A projector includes a network interface card, a basic input output system, and a service set identifier module. The network interface card is configured to communicate with a computer. The basic input output system is in communication with the network interface card, and is configured to store a model number and identification data for the projector. The service set identifier module is in communication with the basic input output system, and is configured to retrieve the model number and the identification data, and to utilize the model number and the identification data to create a unique service set identifier for the projector.
摘要翻译：投影仪包括网络接口卡，基本输入输出系统和服务集识别器模块。网络接口卡被配置为与计算机通信。基本输入输出系统与网络接口卡通信，并配置为存储投影机的型号和识别数据。服务集标识符模块与基本输入输出系统通信，并被配置为检索型号和识别数据，并利用型号和识别数据为投影机创建唯一的服务集标识符。

8. 发明申请

US20070048446A1 GAS DELIVERY SYSTEM FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：用于半导体加工的气体输送系统
公开(公告)号：US20070048446A1
公开(公告)日：2007-03-01
申请号：US11552129
申请日：2006-10-23
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom Cho , Muhammad Rasheed , Hemant Mungekar , Thanh Pham , Zhong Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom Cho , Muhammad Rasheed , Hemant Mungekar , Thanh Pham , Zhong Hua
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
摘要翻译：本发明旨在改善半导体处理系统中的缺陷性能。在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

9. 发明申请

US20060166515A1 In-situ-etch-assisted HDP deposition 失效
标题翻译：原位蚀刻辅助HDP沉积
公开(公告)号：US20060166515A1
公开(公告)日：2006-07-27
申请号：US11388657
申请日：2006-03-24
申请人： M. Karim , DongQing Li , Jeong Byun , Thanh Pham
发明人： M. Karim , DongQing Li , Jeong Byun , Thanh Pham
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
摘要翻译：提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。从处理气体形成离子密度为至少10×10 6离子/ cm 3的等离子体。氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

10. 发明申请

US20050048801A1 In-situ-etch-assisted HDP deposition using SiF4 and hydrogen 有权
标题翻译：使用SiF4和氢进行原位蚀刻辅助的HDP沉积
公开(公告)号：US20050048801A1
公开(公告)日：2005-03-03
申请号：US10655230
申请日：2003-09-03
申请人： M. Karim , DongQing Li , Jeong Byun , Thanh Pham
发明人： M. Karim , DongQing Li , Jeong Byun , Thanh Pham
IPC分类号： C23C16/04 , C23C16/40 , C23C16/50 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF4，H2，硅源和氧化性气体反应物的工艺气体流入处理室。从工艺气体形成具有至少10 11 / cm 3离子密度的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。在这种沉积过程中，衬底的温度大于450℃

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式