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1. 发明申请

US20070048446A1 GAS DELIVERY SYSTEM FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：用于半导体加工的气体输送系统
公开(公告)号：US20070048446A1
公开(公告)日：2007-03-01
申请号：US11552129
申请日：2006-10-23
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom Cho , Muhammad Rasheed , Hemant Mungekar , Thanh Pham , Zhong Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom Cho , Muhammad Rasheed , Hemant Mungekar , Thanh Pham , Zhong Hua
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
摘要翻译：本发明旨在改善半导体处理系统中的缺陷性能。在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

2. 发明授权

US07141138B2 Gas delivery system for semiconductor processing 有权
公开(公告)号：US07141138B2
公开(公告)日：2006-11-28
申请号：US10630989
申请日：2003-07-28
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

3. 发明授权

US07498268B2 Gas delivery system for semiconductor processing 有权
标题翻译：用于半导体加工的气体输送系统
公开(公告)号：US07498268B2
公开(公告)日：2009-03-03
申请号：US11552129
申请日：2006-10-23
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
摘要翻译：本发明旨在改善半导体处理系统中的缺陷性能。在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

4. 发明申请

US20080041821A1 Gas Distribution System for Improved Transient Phase Deposition 审中-公开
标题翻译：用于改进瞬态相沉积的气体分配系统
公开(公告)号：US20080041821A1
公开(公告)日：2008-02-21
申请号：US11877502
申请日：2007-10-23
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana Gujer
IPC分类号： C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

5. 发明申请

US20060113038A1 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US20060113038A1
公开(公告)日：2006-06-01
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

6. 发明授权

US07722737B2 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US07722737B2
公开(公告)日：2010-05-25
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad M. Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana E. Gujer, legal representative
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad M. Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/326 , C23C16/505
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

7. 发明申请

US20060228886A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
标题翻译：用于电介质膜的沉积选择性蚀刻沉积工艺
公开(公告)号：US20060228886A1
公开(公告)日：2006-10-12
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

8. 发明申请

US20060286764A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
公开(公告)号：US20060286764A1
公开(公告)日：2006-12-21
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/76
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

9. 发明申请

US20050019494A1 Sequential gas flow oxide deposition technique 失效
标题翻译：顺序气流氧化沉积技术
公开(公告)号：US20050019494A1
公开(公告)日：2005-01-27
申请号：US10627228
申请日：2003-07-25
申请人： Farhad Moghadam , Michael Cox , Padmanabhan Krishnaraj , Thanh Pham
发明人： Farhad Moghadam , Michael Cox , Padmanabhan Krishnaraj , Thanh Pham
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/507
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译：一种在基板上沉积石英玻璃绝缘膜的方法。在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

10. 发明申请

US20050079715A1 Method for high aspect ratio HDP CVD gapfill 失效
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US20050079715A1
公开(公告)日：2005-04-14
申请号：US10956469
申请日：2004-10-01
申请人： Zhong Hua , Dong Li , Zhengquan Tan , Zhuang Li , Michael Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Hua , Dong Li , Zhengquan Tan , Zhuang Li , Michael Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： C23C16/04 , C23C16/40 , C23C16/507 , H01L21/316 , H01L21/762 , H01L21/302 , H01L21/31 , H01L21/461 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

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