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1. 发明授权

US09171613B2 Memristors with asymmetric electrodes 有权
标题翻译：带不对称电极的忆阻器
公开(公告)号：US09171613B2
公开(公告)日：2015-10-27
申请号：US13322291
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Jianhua Yang , Shih-Yuan Wang , Michael Stuke
发明人： Alexandre M. Bratkovski , Jianhua Yang , Shih-Yuan Wang , Michael Stuke
IPC分类号： H01L29/04 , H01L47/00 , G11C13/00 , G11C16/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
摘要翻译：本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。在一个实施例中，忆阻器件包括有源区域，设置在有源区域的第一表面上的第一电极和设置在有源区域的第二表面上的第二电极，第二表面与第一表面相对。第一电极被配置为在第一方向上具有比有源区域更小的宽度，并且第二电极被配置为在第二方向上具有比有源区域更大的宽度。向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域的电场。

2. 发明授权

US08283649B2 Memristor with a non-planar substrate 有权
标题翻译：带非平面基片的忆阻器
公开(公告)号：US08283649B2
公开(公告)日：2012-10-09
申请号：US12510753
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Shih Yuan Wang , Jianhua Yang , Michael Stuke
发明人： Alexandre M. Bratkovski , Shih Yuan Wang , Jianhua Yang , Michael Stuke
IPC分类号： H01L29/04
CPC分类号： G11C13/0009 , G11C17/16 , G11C17/165 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode.
摘要翻译：忆阻器包括具有多个突起的基板，其中多个突起中的每一个在第一方向上延伸，第一电极设置在多个突起中的至少一个上，其中第一电极符合至少的形状一个突起，使得第一电极具有峰顶，开关材料定位在第一电极上; 以及位于所述开关材料上的第二电极，使得所述第二电极的一部分沿着所述第一方向与所述第一电极的峰基本上一致，其中所述开关材料中的有源区可操作地形成在所述第一电极的顶部之间，所述第一电极和所述第二电极的与所述第一电极的峰基本上一致的部分。

3. 发明申请

US20110024710A1 MEMRISTOR WITH A NON-PLANAR SUBSTRATE 有权
标题翻译：具有非平面基板的电容器
公开(公告)号：US20110024710A1
公开(公告)日：2011-02-03
申请号：US12510753
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Shih Yuan Wang , Jianhua Yang , Michael Stuke
发明人： Alexandre M. Bratkovski , Shih Yuan Wang , Jianhua Yang , Michael Stuke
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/0009 , G11C17/16 , G11C17/165 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode.
摘要翻译：忆阻器包括具有多个突起的基板，其中多个突起中的每一个在第一方向上延伸，第一电极设置在多个突起中的至少一个上，其中第一电极符合至少的形状一个突起，使得第一电极具有峰顶，开关材料定位在第一电极上; 以及位于所述开关材料上的第二电极，使得所述第二电极的一部分沿着所述第一方向与所述第一电极的峰基本上一致，其中所述开关材料中的有源区可操作地形成在所述第一电极的顶部之间，所述第一电极和所述第二电极的与所述第一电极的峰基本上一致的部分。

4. 发明申请

US20120132880A1 Memristors with Asymmetric Electrodes 有权
标题翻译：具有不对称电极的忆阻器
公开(公告)号：US20120132880A1
公开(公告)日：2012-05-31
申请号：US13322291
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Jianhua Yang , Shih-Yuan Wang , Michael Stuke
发明人： Alexandre M. Bratkovski , Jianhua Yang , Shih-Yuan Wang , Michael Stuke
IPC分类号： H01L45/00
CPC分类号： H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.
摘要翻译：本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。在一个实施例中，忆阻器装置（100）包括有源区（102），设置在有源区的第一表面上的第一电极（104）和设置在有源区的第二表面上的第二电极，与第一表面相对的第二表面。第一电极被构造成在第一方向上具有比有效区域更大的宽度，并且第二电极被配置为在第二方向上具有比有效区域更大的宽度。向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域（108）的电场。

5. 发明授权

US09323217B2 Metamaterial and dynamically reconfigurable hologram employing same 有权
标题翻译：超材料和使用相同的动态可重构全息图
公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/08 , G03H1/02 , G03H1/22 , G02B1/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译：负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。第一层中的纳米线在第二层中与纳米线的取向近似垂直。第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。横杆还包括在各层之间的纳米线交叉处的共振元件。每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。

6. 发明申请

US20140036262A1 ELECTRONIC AND PLASMONIC ENHANCEMENT FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：表面增强拉曼光谱的电子和等离子体增强
公开(公告)号：US20140036262A1
公开(公告)日：2014-02-06
申请号：US13562567
申请日：2012-07-31
申请人： Shih-Yuan Wang , Gary Gibson , Zhiyong Li , Alexandre M. Bratkovski , Huei Pei Kuo , Zhang-Lin Zhou , R Stanley Williams
发明人： Shih-Yuan Wang , Gary Gibson , Zhiyong Li , Alexandre M. Bratkovski , Huei Pei Kuo , Zhang-Lin Zhou , R Stanley Williams
IPC分类号： G01J3/44
CPC分类号： G01N21/658
摘要： An apparatus for surface enhanced Raman spectroscopy includes a substrate, a nanostructure and a plasmonic material. The nanostructure and the plasmonic material are integrated together to provide electronic and plasmonic enhancement to a Raman signal produced by electromagnetic radiation scattering from an analyte.
摘要翻译：用于表面增强拉曼光谱的装置包括底物，纳米结构和等离子体激元材料。将纳米结构和等离子体激元材料集成在一起，以对由分析物的电磁辐射散射产生的拉曼信号提供电子和等离子体增强。

7. 发明申请

US20140029002A1 ADJUSTABLE INTERSURFACE SPACING FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：表面增强拉曼光谱的可调节的表面间距
公开(公告)号：US20140029002A1
公开(公告)日：2014-01-30
申请号：US13561561
申请日：2012-07-30
申请人： Shih-Yuan Wang , Zhiyong Li , Alexandre M. Bratkovski , Gary Gibson , Huei Pei Kuo , Zhang-Lin Zhou , Steven J. Barcelo , Ansoon Kim , R Stanley Williams
发明人： Shih-Yuan Wang , Zhiyong Li , Alexandre M. Bratkovski , Gary Gibson , Huei Pei Kuo , Zhang-Lin Zhou , Steven J. Barcelo , Ansoon Kim , R Stanley Williams
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y15/00
摘要： A sensor for surface enhanced Raman spectroscopy (SERS) sensor includes surfaces and an actuator to adjust an intersurface spacing between the surfaces to contain an analyte and allow the analyte to be released from containment.
摘要翻译：用于表面增强拉曼光谱（SERS）传感器的传感器包括表面和致动器，以调节表面之间的表面间隔，以包含分析物并允许分析物从容纳物释放。

8. 发明授权

US08559003B2 Electrically driven devices for surface enhanced raman spectroscopy 有权
标题翻译：用于表面增强拉曼光谱的电驱动装置
公开(公告)号：US08559003B2
公开(公告)日：2013-10-15
申请号：US13384456
申请日：2009-09-17
申请人： Huei Pei Kuo , Shih-Yuan Wang , Min Hu , Zhiyong Li , Alexandre M. Bratkovski
发明人： Huei Pei Kuo , Shih-Yuan Wang , Min Hu , Zhiyong Li , Alexandre M. Bratkovski
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y15/00 , B82Y30/00
摘要： An electrically driven device for surface enhanced Raman spectroscopy includes a first electrode, a substrate positioned proximate to the first electrode, a plurality of cone shaped protrusions formed integrally with or on a substrate surface, a Raman signal-enhancing material coated on each protrusion, and a second electrode positioned relative to the first electrode at a predetermined distance. Each of the protrusions has a tip with a radius of curvature ranging from about 0.1 nm to about 100 nm. The second electrode is positioned relative to the first electrode such that the electrodes together produce an electric field when a voltage bias is applied therebetween. The electric field has a field distribution that creates a stronger field gradient at a region proximate to the tips than at other portions of the substrate.
摘要翻译：用于表面增强拉曼光谱的电驱动装置包括第一电极，靠近第一电极定位的基板，与基底表面一体地形成的多个锥形突起，涂覆在每个突起上的拉曼信号增强材料，以及相对于第一电极以预定距离定位的第二电极。每个突起具有具有约0.1nm至约100nm范围的曲率半径的尖端。第二电极相对于第一电极定位，使得当在其之间施加电压偏置时，电极一起产生电场。电场具有场分布，其在靠近尖端的区域处产生比在衬底的其它部分更强的场梯度。

9. 发明授权

US08208137B2 Molecule detection using Raman light detection 失效
标题翻译：使用拉曼光检测的分子检测
公开(公告)号：US08208137B2
公开(公告)日：2012-06-26
申请号：US12696853
申请日：2010-01-29
申请人： Min Hu , Alexandre M. Bratkovski , Jingjing Li , Huei Pei Kuo , Zhiyong Li , Fung Suong Ou , Michael Josef Stuke , Michael Renne Ty Tan , Shih-Yuan Wang , Wei Wu
发明人： Min Hu , Alexandre M. Bratkovski , Jingjing Li , Huei Pei Kuo , Zhiyong Li , Fung Suong Ou , Michael Josef Stuke , Michael Renne Ty Tan , Shih-Yuan Wang , Wei Wu
IPC分类号： G01J3/44
CPC分类号： G01J3/44
摘要： An apparatus for detecting at least one molecule using Raman light detection includes a substrate for supporting a sample containing the at least one molecule, a laser source for emitting a laser beam to cause Raman light emission from the at least one molecule, a modulating element for modulating a spatial relationship between the laser beam and the substrate at an identified frequency to cause the Raman light to be emitted from the at least one molecule at the identified frequency, at least one detector for detecting the Raman light emitted from the at least one molecule, and a post-signal processing unit configured to process the detected Raman light emission at the identified frequency to detect the at least one molecule.
摘要翻译：用于使用拉曼光检测检测至少一个分子的装置包括用于支撑含有至少一个分子的样品的基底，用于发射激光束以产生来自至少一个分子的拉曼光发射的激光源，以识别的频率调制激光束和衬底之间的空间关系，以使所述拉曼光以所识别的频率从所述至少一个分子发射;至少一个检测器，用于检测从所述至少一个分子发射的拉曼光以及后信号处理单元，被配置为处理所识别的频率处的所检测的拉曼光发射以检测所述至少一个分子。

10. 发明申请

US20110273756A1 DYNAMICALLY RECONFIGURABLE HOLOGRAMS WITH CHALCOGENIDE INTERMEDIATE LAYERS 审中-公开
标题翻译：具有氯化铝中间层的动态可重构的HOLOGRAMS
公开(公告)号：US20110273756A1
公开(公告)日：2011-11-10
申请号：US13142482
申请日：2008-12-29
申请人： Shih-Yuan Wang , Lars Helge Thylen , Alexandre M. Bratkovski , Jingjing Li , Wei Wu
发明人： Shih-Yuan Wang , Lars Helge Thylen , Alexandre M. Bratkovski , Jingjing Li , Wei Wu
IPC分类号： G03H1/22
CPC分类号： G03H1/22 , B82Y20/00 , G02F1/1333 , G02F1/134336 , G02F1/19 , G02F2201/12 , G02F2201/44 , G02F2201/52 , G02F2202/30 , G02F2202/36 , G02F2203/12 , G02F2203/30 , G02F2203/50 , G03H1/02 , G03H1/2294 , G03H2001/0224 , G03H2225/22 , G03H2225/32 , G03H2225/33 , G03H2240/24
摘要： Various embodiments of the present invention relate to dynamically reconfigurable hologram comprising a phase-modulation layer and an intensity-control layer. The phase modulation layer comprises an electronically programmable erasable negative index material crossbar. The crossbar includes a first layer of approximately parallel nanowires (502) and a second layer of approximately parallel nanowires (504) that overlay the nanowires in the first layer. The nanowires in the first and second layers have substantially regularly spaced fingers. The crossbar also includes resonant elements (812) comprising a chalcogenide-based layer (1000) sandwiched between the nanowire in the first layer and the nanowire in the second layer.
摘要翻译：本发明的各种实施例涉及包括相位调制层和强度控制层的动态可重构全息图。相位调制层包括电子可编程可擦除负指数材料交叉开关。交叉开关包括大致平行的纳米线（502）的第一层和覆盖第一层中的纳米线的近似平行的纳米线（504）的第二层。第一层和第二层中的纳米线具有大致规则间隔的指状物。横杆还包括谐振元件（812），其包括夹在第一层中的纳米线和第二层中的纳米线之间的基于硫族化物的层（1000）。

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