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    • 8. 发明授权
    • Method for planarization etch with in-situ monitoring by interferometry prior to recess etch
    • 在凹陷蚀刻之前用干涉测量法进行原位监测的平面蚀刻方法
    • US07204934B1
    • 2007-04-17
    • US10002676
    • 2001-10-31
    • Linda BralyVahid VahediErik EdelbergAlan Miller
    • Linda BralyVahid VahediErik EdelbergAlan Miller
    • H01L21/66G01L21/30
    • H01L21/7684H01L21/32115H01L21/32137H01L21/763
    • A method for processing recess etch operations in substrates is provided including forming a hard mask over the substrate and etching a trench in the substrate using the hard mask, and forming a dielectric layer over the hard mask and in the trench, where the dielectric layer lines the trench. A conductive material is then applied over the dielectric layer such that a blanket of the conductive material lies over the hard mask and fills the trench, and the conductive material is etched to substantially planarize the conductive material. The etching of the conductive material triggers an endpoint just before all of the conductive material is removed from over the dielectric layer that overlies the bard mask. The conductive material is recess etched to remove the conductive material over the dielectric layer that overlies the hard mask and removes at least part of the conductive material from within the trench.
    • 提供了一种用于在衬底中处理凹陷蚀刻操作的方法,包括在衬底上形成硬掩模并使用硬掩模蚀刻衬底中的沟槽,以及在硬掩模和沟槽中形成电介质层,其中电介质层线 沟渠。 然后将导电材料施加在介电层上,使得导电材料的覆盖层位于硬掩模上方并填充沟槽,并且蚀刻导电材料以使导电材料基本上平坦化。 导电材料的蚀刻恰好在所有的导电材料从覆盖在吟诵掩模上的电介质层上除去之前触发端点。 导电材料被凹入蚀刻以去除覆盖在硬掩模上的电介质层上的导电材料,并从沟槽内去除至少一部分导电材料。