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    • 7. 发明授权
    • Method and apparatus for sensing the state of floating gate memory cells
by applying a variable gate voltage
    • 通过施加可变栅极电压来感测浮置栅极存储单元的状态的方法和装置
    • US5508958A
    • 1996-04-16
    • US315292
    • 1994-09-29
    • Albert FazioGregory E. AtwoodMark E. Bauer
    • Albert FazioGregory E. AtwoodMark E. Bauer
    • G11C16/06G11C11/56G11C16/02G11C27/00G11C7/00
    • G11C11/5621G11C11/5642G11C27/005G11C2211/5634G11C2211/5642G11C2211/5644G11C7/16
    • A method and apparatus for sensing the state of floating gate memory cells in a memory array. Because of its stability and accuracy, the sensing apparatus may be used for sensing the state of multi-bit floating gate memory cells. The state of a memory cell is sensed by applying a variable gate voltage to the top gate of the floating gate memory cell and comparing the cell current to a fixed reference current. A circuit detects when the cell current is equal to the reference current. When the currents are equal, the value of the variable gate voltage indicates the state of the memory cell. For one embodiment, an analog-to-digital converter converts the variable gate voltage to a digital value that is latched when the currents are equal. The latched digital value indicates the state of the memory cell. For this embodiment, a ramp voltage or other suitable variable voltage may be used as the variable gate voltage. For another embodiment, a digital-to-analog converter is used to generate the variable gate voltage. A counter generates digital values to step the variable gate voltage. When the cell current equals the fixed reference current, the digital counter value is latched to indicate the state of the memory cell.
    • 一种用于感测存储器阵列中的浮动栅极存储器单元的状态的方法和装置。 由于其稳定性和精度,感测装置可以用于感测多位浮动栅极存储单元的状态。 通过向浮动栅极存储单元的顶栅施加可变栅极电压并将单元电流与固定参考电流进行比较来感测存储单元的状态。 电路检测电池电流何时等于参考电流。 当电流相等时,可变栅极电压的值表示存储单元的状态。 对于一个实施例,模数转换器将可变栅极电压转换成当电流相等时被锁存的数字值。 锁存的数字值表示存储单元的状态。 对于该实施例,可以使用斜坡电压或其它合适的可变电压作为可变栅极电压。 对于另一个实施例,使用数模转换器来产生可变栅极电压。 一个计数器产生数字值,以步进可变栅极电压。 当单元电流等于固定参考电流时,数字计数器值被锁存以指示存储单元的状态。
    • 8. 发明授权
    • Floating gate non-volatile memory with blocks and memory refresh
    • 浮动门非易失性存储器与块和内存刷新
    • US5239505A
    • 1993-08-24
    • US635308
    • 1990-12-28
    • Albert FazioGregory E. AtwoodNeal R. Mielke
    • Albert FazioGregory E. AtwoodNeal R. Mielke
    • G11C16/28G11C16/34
    • G11C16/3431G11C16/28G11C16/3418
    • A non-volatile memory device is described. The memory device includes a first block and a second block. The first block includes a first memory cell having a drain region, a source region, a floating gate, and a control gate. A first word line is coupled to the control gate of the first memory cell. The second block includes a second memory cell having a drain region, a source region, a floating gate, and a control gate. A second word line is coupled to the control gate of the second memory cell. A bit line is coupled to the drain region of the first and the second memory cell. A refresh control means performs a refresh operation on one of the first and second memory cell. A sensing means is coupled to the bit line, and has a first reference potential and a second reference potential for detecting a voltage state of the first and second memory cell during the refresh operation. When the voltage state is detected to fall between the first reference potential and the second reference potential, the sensing means generates a refresh signal to the refresh control means. When the refresh control means receives the refresh signal from the sensing means, the voltage state is raised above the second reference potential. A method of refreshing the non-volatile device is also described.
    • 描述非易失性存储器件。 存储器件包括第一块和第二块。 第一块包括具有漏极区域,源极区域,浮动栅极和控制栅极的第一存储单元。 第一字线耦合到第一存储器单元的控制栅极。 第二块包括具有漏极区域,源极区域,浮动栅极和控制栅极的第二存储单元。 第二字线耦合到第二存储单元的控制栅极。 位线耦合到第一和第二存储单元的漏极区域。 刷新控制装置对第一和第二存储单元之一执行刷新操作。 感测装置耦合到位线,并且具有用于在刷新操作期间检测第一和第二存储器单元的电压状态的第一参考电位和第二参考电位。 当检测到电压状态落在第一参考电位和第二参考电位之间时,感测装置向刷新控制装置产生刷新信号。 当刷新控制装置从感测装置接收到刷新信号时,电压状态升高到高于第二参考电位。 还描述了刷新非易失性设备的方法。