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1. 发明申请

US20110233691A1 HF-MEMS SWITCH 有权
标题翻译： HF-MEMS开关
公开(公告)号：US20110233691A1
公开(公告)日：2011-09-29
申请号：US13052699
申请日：2011-03-21
申请人： Volker Ziegler , Bernhard Schönlinner , Ulrich Prechtel , Armin Stehle
发明人： Volker Ziegler , Bernhard Schönlinner , Ulrich Prechtel , Armin Stehle
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , B81B2203/0118 , H01G5/16 , H01H59/0009
摘要： A high frequency-MEMS switch with a bendable switching element, whose one end is placed on a high resistivity substrate provided with an insulator, furthermore with a contact electrode to supply charge carriers to the substrate, wherein an electrical field can be produced to create an electrostatic bending force on the switching element between the switching element and the substrate, wherein at least one implantation zone is formed in the substrate, essentially directly beneath the insulator, the implantation zone is contacted with the contact electrode, which is located above the insulator, through an opening in the insulator, and also has ohmic contact with the substrate.
摘要翻译：一种具有可弯曲开关元件的高频MEMS开关，其一端放置在设置有绝缘体的高电阻率基板上，此外具有接触电极以向基板提供电荷载流子，其中可以产生电场以产生电场在开关元件和衬底之间的开关元件上的静电弯曲力，其中至少一个注入区基本上在绝缘体的正下方形成，所述注入区与位于绝缘体上方的接触电极接触，通过绝缘体中的开口，并且还与基板欧姆接触。

2. 发明授权

US08742516B2 HF-MEMS switch 有权
标题翻译： HF-MEMS开关
公开(公告)号：US08742516B2
公开(公告)日：2014-06-03
申请号：US13052699
申请日：2011-03-21
申请人： Volker Ziegler , Bernhard Schönlinner , Ulrich Prechtel , Armin Stehle
发明人： Volker Ziegler , Bernhard Schönlinner , Ulrich Prechtel , Armin Stehle
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , B81B2203/0118 , H01G5/16 , H01H59/0009
摘要： A high frequency-MEMS switch with a bendable switching element, whose one end is placed on a high resistivity substrate provided with an insulator, furthermore with a contact electrode to supply charge carriers to the substrate, wherein an electrical field can be produced to create an electrostatic bending force on the switching element between the switching element and the substrate, wherein at least one implantation zone is formed in the substrate, essentially directly beneath the insulator, the implantation zone is contacted with the contact electrode, which is located above the insulator, through an opening in the insulator, and also has ohmic contact with the substrate.
摘要翻译：一种具有可弯曲开关元件的高频MEMS开关，其一端放置在设置有绝缘体的高电阻率基板上，此外具有接触电极以向基板提供电荷载流子，其中可以产生电场以产生电场在开关元件和衬底之间的开关元件上的静电弯曲力，其中至少一个注入区基本上在绝缘体的正下方形成，所述注入区与位于绝缘体上方的接触电极接触，通过绝缘体中的开口，并且还与基板欧姆接触。

3. 发明授权

US08736403B2 Resonance filter having low loss 有权
标题翻译：共振滤波器具有低损耗
公开(公告)号：US08736403B2
公开(公告)日：2014-05-27
申请号：US12937049
申请日：2009-04-07
申请人： Bernhard Schönlinner , William Gautier
发明人： Bernhard Schönlinner , William Gautier
IPC分类号： H01P1/208 , H01P7/06
CPC分类号： H01P1/2088 , H01P7/065 , H01P11/002 , H01P11/008
摘要： The present disclosure provides example resonance filters and methods for making the same. The resonance filter includes a first layer having n adjacent resonance cavities, n being at least 2 and said cavities each being separated from one another by a partition wall. The resonance filter also includes a second layer having at least n−1 coupling cavities. The cavities in the first layer are formed as resonance cavities and those in the second layer are formed as (a) coupling cavity/cavities and are open on one side. The second layer is arranged on the first layer in such a way that the resonance cavities in the first layer are interconnected by the coupling cavity/cavities in the second layer. Further, the resonance filter is configured as a monolithic component.
摘要翻译：本公开提供了示例性谐振滤波器及其制造方法。谐振滤波器包括具有n个相邻谐振腔的第一层，n至少为2，并且所述空腔各自通过分隔壁彼此分离。谐振滤波器还包括具有至少n-1个耦合腔的第二层。第一层中的空腔形成为共振腔，第二层中的空腔形成为（a）耦合腔/空腔，并且在一侧开放。第二层被布置在第一层上，使得第一层中的谐振腔通过第二层中的耦合空腔/空腔相互连接。此外，谐振滤波器被配置为单片元件。

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