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1. 发明授权

US5010388A Connection structure between components for semiconductor apparatus 失效
标题翻译：半导体器件组件之间的连接结构
公开(公告)号：US5010388A
公开(公告)日：1991-04-23
申请号：US212944
申请日：1988-06-28
申请人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio , Hitoshi Akazawa
发明人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio , Hitoshi Akazawa
IPC分类号： H01L21/48 , H01L23/10 , H01L23/495 , H01L23/498 , H05K1/03 , H05K3/24 , H05K3/34
CPC分类号： H05K3/3405 , H01L21/4853 , H01L23/10 , H01L23/49582 , H01L23/49811 , H01L2224/48091 , H01L24/48 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/12033 , H01L2924/12042 , H05K1/0306 , H05K2201/0347 , H05K2201/1025 , H05K2201/1034 , H05K2201/10909 , H05K2201/10916 , H05K3/246 , H05K3/3421 , Y10T428/12576
摘要： A connection structure between lead frames and a base plate of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, has a base plate made of a sintered body of aluminum nitride on which a semiconductor device is to be mounted. The lead frames are made of iron alloy containing nickel in 29 wt. % and cobalt in 17 wt. %. A silver solder is used for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is clad with a stress relief layer of oxygen-free copper of a high plastic deformability to relieve, by its plastic deformation, a thermal stress caused by a difference between a thermal expansion coefficient of the aluminum nitride base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame to be joined to the base plate comprises an inner layer of an iron alloy containing 29 wt. % of nickel and 17 wt. % of cobalt, and an outer layer portion of oxygen-free copper.

2. 发明授权

US4886709A Member for semiconductor apparatus 失效
标题翻译：半导体设备会员
公开(公告)号：US4886709A
公开(公告)日：1989-12-12
申请号：US214508
申请日：1988-07-01
申请人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio
发明人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio
IPC分类号： H01L23/15 , H01L23/373
CPC分类号： H01L23/15 , H01L23/3735 , H01L2224/48227 , Y10T428/12056 , Y10T428/12528 , Y10T428/12576 , Y10T428/12882 , Y10T428/1291
摘要： A member for a semiconductor apparatus for carrying or holding a semiconductor device, obtained by joining an aluminum nitride substrate and a radiating substrate, comprises an insulating member formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device, a radiating member to be joined to the insulating member, which radiating member is mainly formed of a copper-tungsten alloy or a copper-molybdenum alloy, a stress relieving member interposed between the insulating member and the radiating member and a silver solder member for joining the insulating member, the stress relieving member and the radiating member with each other. The stress relieving member is prepared by copper or a copper alloy, implementing a soft metal or a soft alloy having high plastic deformability, in order to relax, by its own plastic deformation, thermal stress caused by difference in thermal expansion coefficient between the insulating member and the radiating member in a cooling step upon soldering.

3. 发明申请

US20130109874A1 POLYNUCLEOTIDE ENCODING PPAT DERIVED FROM JATROPHA AND USE THEREOF 有权
标题翻译：编码从JATROPHA衍生的PPAT的多核苷酸及其用途
公开(公告)号：US20130109874A1
公开(公告)日：2013-05-02
申请号：US13643396
申请日：2011-10-25
申请人： Kiichi Fukui , Joyce Cartagena , Naoki Wada , Tsutomu Kohinata , Yasuhisa Yushio , Naoki Ikeguchi , Satoshi Tabata
发明人： Kiichi Fukui , Joyce Cartagena , Naoki Wada , Tsutomu Kohinata , Yasuhisa Yushio , Naoki Ikeguchi , Satoshi Tabata
IPC分类号： C12N15/82
CPC分类号： C12N15/8247 , C12N9/1241 , C12N15/8243 , C12N15/8271 , C12N15/8273 , C12Y207/07003
摘要： A PPAT polypeptide of SEQ ID NO: 1 derived from Jatropha, a PPAT polynucleotide of SEQ ID NO: 2 and so on were found. By transforming Jatropha with these PPAT polynucleotides, it is possible to overexpress the PPAT polypeptide in comparison with a wild type, and biosynthesis of coenzyme A is promoted by these polypeptides, the metabolic function and viability of the transformed Jatropha are enhanced, and for example, stress resistance can be significantly improved.
摘要翻译：发现衍生自麻疯树的SEQ ID NO：1的PPAT多肽，SEQ ID NO：2的PPAT多核苷酸等。通过用这些PPAT多核苷酸转化麻疯树，可以与野生型相比过表达PPAT多肽，并且这些多肽促进了辅酶A的生物合成，增强了转化的麻疯树的代谢功能和活力，例如，耐应力可显着提高。

4. 发明授权

US06271163B1 Aluminum nitride sintered body and method of preparing the same 有权
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US06271163B1
公开(公告)日：2001-08-07
申请号：US09357600
申请日：1999-07-20
申请人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
发明人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
IPC分类号： C04B35581
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： An aluminum nitride sintered body has excellent thermal shock resistance and strength, and is applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. The aluminum nitride sintered body contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, respectively as sintering aids, and a residual amount of carbon in a range from 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
摘要翻译：氮化铝烧结体具有优异的耐热冲击性和强度，并且适用于在严格的热循环下使用的用于功率模块的辐射基板或用于半导体设备的夹具。氮化铝烧结体分别含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀土元素化合物，以氧化物计，作为烧结助剂，残留量在0.005〜0.1重量％的范围内，从而抑制晶粒生长，提高耐热冲击性和烧结体的强度。

5. 发明授权

US09255278B2 Polynucleotide encoding PPAT derived from jatropha and use thereof 有权
标题翻译：编码来自麻疯树的PPAT的多核苷酸及其用途
公开(公告)号：US09255278B2
公开(公告)日：2016-02-09
申请号：US13643396
申请日：2011-10-25
申请人： Kiichi Fukui , Joyce Cartagena , Naoki Wada , Tsutomu Kohinata , Yasuhisa Yushio , Naoki Ikeguchi , Satoshi Tabata
发明人： Kiichi Fukui , Joyce Cartagena , Naoki Wada , Tsutomu Kohinata , Yasuhisa Yushio , Naoki Ikeguchi , Satoshi Tabata
IPC分类号： A01H5/00 , A01H5/10 , C12N15/82 , C12N9/06 , C12N15/53 , C12N9/12
CPC分类号： C12N15/8247 , C12N9/1241 , C12N15/8243 , C12N15/8271 , C12N15/8273 , C12Y207/07003
摘要： A PPAT polypeptide of SEQ ID NO: 1 derived from Jatropha, a PPAT polynucleotide of SEQ ID NO: 2 and so on were found. By transforming Jatropha with these PPAT polynucleotides, it is possible to overexpress the PPAT polypeptide in comparison with a wild type, and biosynthesis of coenzyme A is promoted by these polypeptides, the metabolic function and viability of the transformed Jatropha are enhanced, and for example, stress resistance can be significantly improved.
摘要翻译：发现衍生自麻疯树的SEQ ID NO：1的PPAT多肽，SEQ ID NO：2的PPAT多核苷酸等。通过用这些PPAT多核苷酸转化麻疯树，可以与野生型相比过表达PPAT多肽，并且这些多肽促进了辅酶A的生物合成，增强了转化的麻疯树的代谢功能和活力，例如，耐应力可显着提高。

6. 发明授权

US06294275B1 Aluminum-nitride sintered body, method for fabricating the same, and semiconductor substrate comprising the same 有权
标题翻译：氮化铝烧结体及其制造方法以及包含该氮化物的半导体衬底
公开(公告)号：US06294275B1
公开(公告)日：2001-09-25
申请号：US09304531
申请日：1999-05-04
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio , Motoyuki Tanaka , Shunji Nagao , Akira Shinkoda , Kazutaka Sasaki
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio , Motoyuki Tanaka , Shunji Nagao , Akira Shinkoda , Kazutaka Sasaki
IPC分类号： B32B900
CPC分类号： C04B41/009 , C04B35/581 , C04B41/51 , C04B41/88 , C04B2111/00844 , H01L23/15 , H01L2924/0002 , H05K1/0306 , Y10T428/24917 , H01L2924/00
摘要： An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A material powder is prepared by mixing an aluminum-nitride powder, constituting 1 to 95 wt. %, having an average particle diameter of 1.0 &mgr;m or less obtained by chemical vapor deposition, with another type or types of aluminum-nitride powders constituting the remaining part. The material powder is sintered in a non-oxidizing atmosphere to obtain a sintered body having an average grain diameter of 2 &mgr;m or less and a half width of the diffraction peak on the (302) plane, obtained by X-ray diffraction, of 0.24 deg. or less. Formation of a metallized layer on the sintered body yields a semiconductor substrate.
摘要翻译：具有高导热性和高机械强度的氮化铝烧结体及其制造方法以及包含该氮化物烧结体的半导体衬底。通过混合构成1〜95重量％的氮化铝粉末，％，通过化学气相沉积获得的平均粒径为1.0μm以下的其他类型的氮化铝粉末构成剩余部分。将该材料粉末在非氧化性气氛中烧结，得到平均粒径为2μm以下的通过X射线衍射得到的（302）面衍射峰的半值宽度为0.24的烧结体度或更少。在烧结体上形成金属化层产生半导体衬底。

7. 发明授权

US6078027A Ceramic fixing heater containing silicon nitride 失效
标题翻译：含氮化硅的陶瓷固定加热器
公开(公告)号：US6078027A
公开(公告)日：2000-06-20
申请号：US153789
申请日：1998-09-15
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Yasuhisa Yushio
IPC分类号： G03G15/20 , H05B3/14 , H05B3/16 , H05B1/00
CPC分类号： H05B3/141 , G03G15/2053 , G03G15/2064
摘要： A heater for fixing a toner image suffers no cracking of the ceramics substrate, thereof has a high connection reliability between an electrode and a connector thereof, and capable of attaining an improved fixing speed and a size increase of a transfer material. The heater, which is adapted to heat and fix a toner image on a transfer material, comprises a ceramics substrate containing silicon nitride and a heat generator formed on the ceramics substrate. The thermal conductivity and the transverse rupture strength of the silicon nitride forming the ceramics substrate are preferably at least 40 W/mK and at least 50 kg/mm.sup.2 respectively, and the thickness of the ceramics substrate can be reduced to 0.1 to 0.5 mm.
摘要翻译：用于固定调色剂图像的加热器不会破坏陶瓷基板，而是在电极及其连接器之间具有高的连接可靠性，并且能够获得改进的定影速度和转印材料的尺寸增加。适于将调色剂图像加热并固定在转印材料上的加热器包括形成在陶瓷基板上的含有氮化硅的陶瓷基板和发热体。形成陶瓷基板的氮化硅的导热率和横向断裂强度分别优选为40W / mK以上且50kg / mm2以上，陶瓷基板的厚度可以降低至0.1〜0.5mm。

8. 发明申请

US20050173523A1 Emission amount report device, system for charge for exhaust gas from vehicle, management unit and inspection device making up the system 审中-公开
标题翻译：排放量报告装置，车辆废气收集系统，管理单位和构成系统的检验装置
公开(公告)号：US20050173523A1
公开(公告)日：2005-08-11
申请号：US10516495
申请日：2003-09-29
申请人： Yasuhisa Yushio , Shingo Ohashi
发明人： Yasuhisa Yushio , Shingo Ohashi
IPC分类号： F01N11/00 , G07C5/00 , G07C5/08 , G07B15/02
CPC分类号： G06Q40/02 , F01N11/00 , F01N2550/00 , G06Q10/10 , G07C5/008 , G07C5/085 , Y02T10/47
摘要： For improving driver's awareness about emissions and promoting environmental protection, an emission amount notifying device is provided. When such a taxation system becomes effective that a tax is imposed in accordance with an amount of one or more kinds of harmful substances, which include a carbon dioxide, nitrogen oxides, sulphur oxides and hydrocarbons emitted from a vehicle, a sensor determines the emission amounts of respective harmful substances, and a CPU obtains the amount of tax corresponding to the determined emission amounts from a ROM storing tax information related to the tax amounts corresponding to respective displacements, and displays the obtained tax amount on a display device. Further, the CPU sends the information relating to the determined emission amount to a server of authorities from a communication unit for performing tax payment procedures.
摘要翻译：为提高司机对排放的意识和促进环境保护，提供排放量通知装置。当这样的税收制度变得有效时，根据一种或多种包括二氧化碳，氮氧化物，硫氧化物和从车辆排出的碳氢化合物的有害物质的量来实施税收时，传感器确定排放量并且CPU从存储与各个位移对应的税额相关的税收信息的ROM中获得与确定的排放量相对应的税额，并将获得的税额显示在显示装置上。此外，CPU将用于确定的排放量的信息从用于执行纳税程序的通信单元发送到当局的服务器。

9. 发明授权

US06770379B2 Susceptor for semiconductor manufacturing equipment and process for producing the same 失效
标题翻译：半导体制造设备的受害者及其生产过程
公开(公告)号：US06770379B2
公开(公告)日：2004-08-03
申请号：US10166778
申请日：2002-06-12
申请人： Yasuhisa Yushio , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Yasuhisa Yushio , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： B21D3900
CPC分类号： C04B35/581 , B32B37/12 , B32B2315/02 , C04B35/111 , C04B35/6263 , C04B35/62655 , C04B35/62695 , C04B35/6342 , C04B35/638 , C04B37/005 , C04B37/006 , C04B41/009 , C04B41/5001 , C04B41/85 , C04B2235/3206 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3418 , C04B2235/36 , C04B2235/3865 , C04B2235/3895 , C04B2235/449 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/602 , C04B2235/6021 , C04B2235/6025 , C04B2235/604 , C04B2235/608 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/94 , C04B2235/9607 , C04B2235/9615 , C04B2235/963 , C04B2235/9638 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/343 , C04B2237/366 , C04B2237/66 , C04B2237/72 , C23C16/4581 , C30B25/12 , C30B31/14 , Y10S428/901 , Y10T428/12542 , Y10T428/12549 , Y10T428/24926 , Y10T428/252 , Y10T428/30 , C04B41/4531 , C04B41/53 , B32B18/00
摘要： A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AlN), in which the average particle size of an AlN crystal is from 2 to 5 &mgr;m. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000° C. and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700° and finishing the fired laminate.
摘要翻译：通过层叠多个具有高熔点金属层和粘合剂层的氮化铝（AlN）陶瓷基板，特别是氮化铝（AlN）陶瓷基板而获得的用于半导体制造设备的感受体包含第3a族元素的化合物 0.01〜1重量％，余量基本上由氮化铝（AlN）组成，其中AlN晶体的平均粒径为2-5μm。通过以下步骤从材料粉末的混合物中获得基材来制备感受体，所述方法是在1600-2000℃的非氧化性气氛中进行成型，烧结并形成所需的基材形状，然后层压多个得到的基材具有高熔点金属层和粘合剂层，插入在基板之间，在非氧化性气氛中烧结层压体为1500〜1700°，并对烧成的层叠体进行精加工。

10. 发明授权

US06500052B2 Method of polishing a ceramic substrate 有权
标题翻译：抛光陶瓷基板的方法
公开(公告)号：US06500052B2
公开(公告)日：2002-12-31
申请号：US09964997
申请日：2001-09-26
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
IPC分类号： B24B100
CPC分类号： B24B29/00 , B24B7/22 , G03G15/2053 , Y10T428/24355 , Y10T428/24413 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/266 , Y10T428/268
摘要： The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle &thgr; formed between the polishing direction D0 of the ceramic substrate and the rotating direction D1, of the rotating body is set in the range from 10° to 80° for the polishing step. Alternatively, the polishing process is divided into at least two steps. and the average grain size of abrasive grains is reduced stepwise in the successive steps of the polishing process. According to this method, the surface of a large-area and thin ceramic substrate can be polished without damage, and a smooth polished ceramic surface can be provided. This method is particularly suitable for polishing a ceramic substrate having a thickness of at most 2.0 mm, and the resulting polished ceramic substrate is suitable for a ceramic heater in a thermal fixation device for fixing a toner image.
摘要翻译：含有磨粒的韧性旋转体的圆周边缘部分用于抛光陶瓷基体的表面。在研磨步骤中，将陶瓷基板的研磨方向D0与旋转体的旋转方向D1之间形成的角度θ设定在10°〜80°的范围内。或者，将抛光处理分为至少两个步骤。在研磨过程的连续步骤中，磨粒的平均粒径逐步降低。根据该方法，可以在不损坏的情况下抛光大面积且薄的陶瓷基板的表面，并且可以提供光滑的抛光陶瓷表面。该方法特别适合于研磨厚度至多为2.0mm的陶瓷基板，所得到的抛光陶瓷基板适用于用于定影调色剂图像的热固定装置中的陶瓷加热器。

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