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1. 发明授权

US5010388A Connection structure between components for semiconductor apparatus 失效
标题翻译：半导体器件组件之间的连接结构
公开(公告)号：US5010388A
公开(公告)日：1991-04-23
申请号：US212944
申请日：1988-06-28
申请人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio , Hitoshi Akazawa
发明人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio , Hitoshi Akazawa
IPC分类号： H01L21/48 , H01L23/10 , H01L23/495 , H01L23/498 , H05K1/03 , H05K3/24 , H05K3/34
CPC分类号： H05K3/3405 , H01L21/4853 , H01L23/10 , H01L23/49582 , H01L23/49811 , H01L2224/48091 , H01L24/48 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/12033 , H01L2924/12042 , H05K1/0306 , H05K2201/0347 , H05K2201/1025 , H05K2201/1034 , H05K2201/10909 , H05K2201/10916 , H05K3/246 , H05K3/3421 , Y10T428/12576
摘要： A connection structure between lead frames and a base plate of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, has a base plate made of a sintered body of aluminum nitride on which a semiconductor device is to be mounted. The lead frames are made of iron alloy containing nickel in 29 wt. % and cobalt in 17 wt. %. A silver solder is used for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is clad with a stress relief layer of oxygen-free copper of a high plastic deformability to relieve, by its plastic deformation, a thermal stress caused by a difference between a thermal expansion coefficient of the aluminum nitride base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame to be joined to the base plate comprises an inner layer of an iron alloy containing 29 wt. % of nickel and 17 wt. % of cobalt, and an outer layer portion of oxygen-free copper.

2. 发明授权

US4886709A Member for semiconductor apparatus 失效
标题翻译：半导体设备会员
公开(公告)号：US4886709A
公开(公告)日：1989-12-12
申请号：US214508
申请日：1988-07-01
申请人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio
发明人： Akira Sasame , Hitoyuki Sakanoue , Hisao Takeuchi , Masaya Miyake , Akira Yamakawa , Yasuhisa Yushio
IPC分类号： H01L23/15 , H01L23/373
CPC分类号： H01L23/15 , H01L23/3735 , H01L2224/48227 , Y10T428/12056 , Y10T428/12528 , Y10T428/12576 , Y10T428/12882 , Y10T428/1291
摘要： A member for a semiconductor apparatus for carrying or holding a semiconductor device, obtained by joining an aluminum nitride substrate and a radiating substrate, comprises an insulating member formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device, a radiating member to be joined to the insulating member, which radiating member is mainly formed of a copper-tungsten alloy or a copper-molybdenum alloy, a stress relieving member interposed between the insulating member and the radiating member and a silver solder member for joining the insulating member, the stress relieving member and the radiating member with each other. The stress relieving member is prepared by copper or a copper alloy, implementing a soft metal or a soft alloy having high plastic deformability, in order to relax, by its own plastic deformation, thermal stress caused by difference in thermal expansion coefficient between the insulating member and the radiating member in a cooling step upon soldering.

3. 发明授权

US5085923A Heat-conductive aluminum nitride sintered body and method of manufacturing the same 失效
标题翻译：热传导性氮化铝烧结体及其制造方法
公开(公告)号：US5085923A
公开(公告)日：1992-02-04
申请号：US686658
申请日：1991-04-17
申请人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Hisao Takeuchi , Koichi Sogabe , Akira Sasame
发明人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Hisao Takeuchi , Koichi Sogabe , Akira Sasame
IPC分类号： C04B35/58 , C04B35/581 , H01L21/48 , H01L23/15 , H05K1/03
CPC分类号： H01L23/15 , C04B35/581 , C04B35/64 , C04B37/026 , H01L21/4807 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3865 , C04B2235/3895 , C04B2235/449 , C04B2235/5445 , C04B2235/6567 , C04B2235/6583 , C04B2235/721 , C04B2235/723 , C04B2235/761 , C04B2235/77 , C04B2235/85 , C04B2235/9607 , C04B2235/963 , C04B2237/122 , C04B2237/123 , C04B2237/366 , C04B2237/403 , C04B2237/407 , C04B2237/55 , C04B2237/72 , H01L2224/48091 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01039 , H01L2924/01046 , H01L2924/01057 , H01L2924/01063 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H05K1/0306 , Y10S428/901 , Y10T428/24917
摘要： An aluminum nitride sintered body is mainly composed of aluminum nitride, contains 0.01 to 1.0 percent by weight of a rare earth element and 0.001 to 0.5 percent by weight of oxygen, and has thermal conductivity of at least 180 W/mK. According to a method of manufacturing such an aluminum nitride sintered body, aluminum nitride powder (201) is first prepared. At least one compound (203) containing a rare earth element is added to the aluminum nitride powder (201) to contain 0.01 to 1.0 percent by weight, in rare earth element conversion, of the compound, to be homogeneously mixed with each other. A formed body obtained by forming such mixed powder is sintered in a non-oxidizing atmosphere containing nitrogen at a temperature of 1500 to 2200.degree. C.

4. 发明授权

US5034357A Heat-conductive aluminum nitride sintered body and method of manufacturing the same 失效
标题翻译：导热氮化铝烧结体及其制造方法
公开(公告)号：US5034357A
公开(公告)日：1991-07-23
申请号：US303284
申请日：1989-01-26
申请人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Hisao Takeuchi , Koichi Sogabe , Akira Sasame
发明人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Hisao Takeuchi , Koichi Sogabe , Akira Sasame
IPC分类号： C04B35/58 , C04B35/581 , H01L21/48 , H01L23/15 , H05K1/03
CPC分类号： H01L23/15 , C04B35/581 , C04B35/64 , C04B37/026 , H01L21/4807 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3865 , C04B2235/3895 , C04B2235/449 , C04B2235/5445 , C04B2235/6567 , C04B2235/6583 , C04B2235/721 , C04B2235/723 , C04B2235/761 , C04B2235/77 , C04B2235/85 , C04B2235/9607 , C04B2235/963 , C04B2237/122 , C04B2237/123 , C04B2237/366 , C04B2237/403 , C04B2237/407 , C04B2237/55 , C04B2237/72 , H01L2224/48091 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01039 , H01L2924/01046 , H01L2924/01057 , H01L2924/01063 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H05K1/0306 , Y10S428/901 , Y10T428/24917
摘要： An aluminum nitride sintered body mainly composed of aluminum nitride, contains 0.01 to 1.0 percent by weight of a rare earth element and 0.001 to 0.5 percent by weight of oxygen. Such a body has a thermal conductivity of at least 180 W/mK. For manufacturing such an aluminum nitride sintered body, aluminum nitride powder (201) is first prepared. At least one compound (203) containing a rare earth element is added to the aluminum nitride powder (201) to contain 0.01 to 1.0 percent by weight, in rare earth element conversion, of the compound. The ingredients are homogeneously mixed with each other. A green body is formed of the mixed powder and sintered at a temperature of 1500.degree. to 2200.degree. C. in a non-oxidizing atmosphere containing nitrogen.

5. 发明授权

US4965659A Member for a semiconductor structure 失效
标题翻译：半导体结构成员
公开(公告)号：US4965659A
公开(公告)日：1990-10-23
申请号：US212950
申请日：1988-06-28
申请人： Akira Sasame , Hitoyuki Sakanoue , Masaya Miyake , Akira Yamakawa
发明人： Akira Sasame , Hitoyuki Sakanoue , Masaya Miyake , Akira Yamakawa
IPC分类号： H01L23/15 , H01L23/373
CPC分类号： H01L23/15 , H01L23/3735 , H01L2224/48091 , H01L2224/48227 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/12033 , H01L2924/12041 , H01L2924/12042 , H01L2924/13055
摘要： A member for a semiconductor structure is constructed, for example, as a mounting, or as a cover, or as a heat sink. Such a component is obtained by joining an aluminum nitride insulating substrate and a radiating element. The metal material for forming the radiating member has a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0.times.10.sup.-6 /K.sup.-1. Preferably the material forming the radiating element is made of a tungsten alloy containing copper by not more than 5 percent by weight.

6. 发明授权

US5264388A Sintered body of aluminum nitride 失效
标题翻译：氮化铝烧结体
公开(公告)号：US5264388A
公开(公告)日：1993-11-23
申请号：US824746
申请日：1992-01-17
申请人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
发明人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
IPC分类号： C04B35/581 , H01L23/15 , H05K1/03 , C04B35/58
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H05K1/0306 , Y10S428/901
摘要： The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti, and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.
摘要翻译：本发明提供一种氮化铝烧结体，其包含（i）氮化铝作为主要成分，和（ii）选自Zr，Hf，V，Nb，Ta，Cr，Mo，W， Fe，Co，Ni，Nd，Ho，Ti及其化合物的总量不大于1.0wt。％且不小于0.01wt。基于烧结体的元素的％，烧结体着色并具有至少150W / mK的导热率。该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。

7. 发明授权

US5219803A Sintered body of aluminum nitride 失效
标题翻译：氮化铝烧结体
公开(公告)号：US5219803A
公开(公告)日：1993-06-15
申请号：US803117
申请日：1991-12-05
申请人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
发明人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
IPC分类号： C04B35/581 , H01L23/15 , H05K1/03
CPC分类号： H01L23/15 , C04B35/581 , H01L2924/0002 , H05K1/0306
摘要： The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti and compounds thereof in the total amounts of not greater than 1.0 wt.% and not less than 0.01 wt.% in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.
摘要翻译：本发明提供一种氮化铝烧结体，其包含（i）氮化铝作为主要成分，和（ii）选自Zr，Hf，V，Nb，Ta，Cr，Mo，W， Fe，Co，Ni，Nd，Ho，Ti及其化合物的总量不大于1.0重量％且不小于0.01重量％，基于烧结体的元素，烧结体是着色的并具有至少150W / mK的热导率。该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。

8. 发明授权

US5293509A Sintered body of aluminum nitride 失效
标题翻译：氮化铝烧结体
公开(公告)号：US5293509A
公开(公告)日：1994-03-08
申请号：US87927
申请日：1993-07-06
申请人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
发明人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
IPC分类号： C04B35/581 , H01L23/15 , H05K1/03 , H01L23/02
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H05K1/0306 , Y10S428/901
摘要： The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.
摘要翻译：本发明提供一种氮化铝烧结体，其包含（i）氮化铝作为主要成分，和（ii）选自Zr，Hf，V，Nb，Ta，Cr，Mo，W， Fe，Co，Ni，Nd，Ho，Ti及其化合物的总量不大于1.0wt。％且不小于0.01wt。基于烧结体的元素的％，烧结体着色并具有至少150W / mK的导热率。该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。

9. 发明授权

US5603788A Method of manufacturing a ceramics-type vacuum vessel 失效
标题翻译：制造陶瓷型真空容器的方法
公开(公告)号：US5603788A
公开(公告)日：1997-02-18
申请号：US457013
申请日：1995-06-01
申请人： Tetsuya Abe , Yoshio Murakami , Hisao Takeuchi , Akira Yamakawa , Masaya Miyake
发明人： Tetsuya Abe , Yoshio Murakami , Hisao Takeuchi , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B37/00 , F16J12/00 , H05H7/14 , B32B31/12 , B32B31/26
CPC分类号： H05H7/14
摘要： A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.
摘要翻译：提供一种真空容器，其中包括环形壁部分（1）和板壁部分（2）的容器壁的大部分由诸如氮化硅的陶瓷材料形成。为了将多个壁构件结合在一起，在其上制备具有不大于1μm的表面平坦度的接合面，然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面并进行加热。因为从陶瓷容器的壁产生气体，例如氢气，所以可以在真空容器的内部产生极高的真空度并维持真空。此外，由于真空容器的壁相对于磁场和电场具有高磁导率，所以真空容器可以用作粒子加速器中的容器，其允许通过以下方式对带电粒子进行高精度控制：电磁场。

10. 发明授权

US4659508A Electrically-conductive sintered compact of silicon nitride machinable by electrical discharge machining and process of producing the same 失效
标题翻译：通过放电加工可加工的氮化硅导电性烧结体及其制造方法
公开(公告)号：US4659508A
公开(公告)日：1987-04-21
申请号：US794675
申请日：1985-11-04
申请人： Matsuo Higuchi , Masaya Miyake , Hisao Takeuchi , Eiji Kamijo
发明人： Matsuo Higuchi , Masaya Miyake , Hisao Takeuchi , Eiji Kamijo
IPC分类号： C04B35/584 , C04B35/593 , C04B35/58 , C04B35/56
CPC分类号： C04B35/584 , C04B35/593
摘要： An electrically-conductive sintered compact of silicon nitride which is machinable by electrical discharge machining and a process to produce the same. TiN and/or TiC powder is added to a powder of silicon nitride in an amount 15-40% by volume to act as a conductivity-supplying agent while 0.01-3.0% by volume MgO and/or Al.sub.2 O.sub.3 powder is added as a sintering assistant. The mixed powders are then preformed in a desired shape and sintered in a nonoxidizing environment at 1,600.degree. C.-2,000.degree. C. to obtain a compact of silicon-nitride machinable by electrical discharge machining due to its electrical conductivity being at least 1 S.multidot.cm.sup.-1.
摘要翻译：可通过放电加工机加工的氮化硅导电烧结体及其制造方法。将TiN和/或TiC粉末加入15-40体积％的氮化硅粉末中，作为导电性供给剂，同时添加0.01-3.0体积％的MgO和/或Al 2 O 3粉末作为烧结助剂。然后将混合粉末预成形为所需形状，并在1600℃-2000℃的非氧化环境中烧结，得到可通过放电加工机加工的氮化硅致密体，因为其导电率至少为1Sxcm- 1。

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