会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • In-process film thickness monitoring system
    • 在线膜厚监测系统
    • US5684574A
    • 1997-11-04
    • US550853
    • 1995-10-31
    • Akira ShiokawaHideaki YasuiKoichi KoteraYuuji MukaiHiroyoshi TanakaTakashi Hirao
    • Akira ShiokawaHideaki YasuiKoichi KoteraYuuji MukaiHiroyoshi TanakaTakashi Hirao
    • C23C14/54G01N21/31G01B11/06
    • G01N21/314C23C14/544
    • A beam emitted from a light source including the characteristic wavelength of flown particles in a film forming system is interrupted by a beam chopper in a predetermined cycle, and is then divided into a probing beam and a reference beam by a beam divider. The probing beam passes through a particle flight area and is then injected into a photo detector through an optical filter, and a probing signal is outputted. A reference signal is obtained from the reference beam in the same manner. A data processor detects the phase and level of both signals, so that an absorbance, i.e., a film forming rate for the flown particles is estimated. The film forming rate is integrated with time so that a film thickness is estimated. Thus, the range of the applicable film forming rate is wide. In addition, it is possible to perform continuous monitoring with high precision also in an atmosphere where a large amount of light having the same wavelength as the characteristic wavelength of the flown particles is generated, as in sputtering systems.
    • 从包含成膜系统中的流动粒子的特征波长的光源发射的光束以预定的周期由光束斩波器中断,然后由分束器分割成探测光束和参考光束。 探测光束通过粒子飞行区域,然后通过滤光片注入光电检测器,并输出探测信号。 以相同的方式从参考光束获得参考信号。 数据处理器检测两个信号的相位和电平,从而估计用于飞行粒子的吸光度,即成膜速率。 成膜速度与时间相结合,从而估计膜厚度。 因此,适用的成膜速率的范围很宽。 此外,如在溅射系统中那样,在具有与流动粒子的特征波长相同波长的大量的光的气氛中也可以高精度地进行连续监视。
    • 6. 发明授权
    • Silicon structure, method for producing the same, and solar battery using the silicon structure
    • 硅结构体及其制造方法以及使用硅结构的太阳能电池
    • US06518494B1
    • 2003-02-11
    • US08701292
    • 1996-08-22
    • Munehiro ShibuyaMasatoshi KitagawaYuuji MukaiAkihisa Yoshida
    • Munehiro ShibuyaMasatoshi KitagawaYuuji MukaiAkihisa Yoshida
    • H01L3100
    • H01L31/0547H01L31/02363H01L31/035227Y02E10/52
    • A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.
    • 具有太阳光反射少的硅结构,适用于太阳能电池。 在石英衬底的整个表面上,以约51μm的厚度沉积Mo以形成下电极。 在下电极的整个表面上,通过使用Si 2 Cl 6混合的主要包含硅的膜,形成厚度为30至40μm的包含多个主要由硅构成并具有随机取向的多个柱状硅构件的聚集体的ap型硅结构 与BCl3。 在p型硅结构的表面上,P通过使用POCl 3的热扩散法扩散,在柱状硅构件的周围形成n型区域。 在p型硅结构的整个表面上,形成厚度为30〜40μm的氧化铟锡的透明电极,在透明电极上形成厚度约为1μm的包含Al的上部电极。