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1. 发明申请

US20130075771A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130075771A1
公开(公告)日：2013-03-28
申请号：US13412044
申请日：2012-03-05
申请人： Akira FUJIMOTO , Tsutomu NAKANISHI , Ryota KITAGAWA , Kenji NAKAMURA , Shinji NUNOTANI , Takanobu KAMAKURA
发明人： Akira FUJIMOTO , Tsutomu NAKANISHI , Ryota KITAGAWA , Kenji NAKAMURA , Shinji NUNOTANI , Takanobu KAMAKURA
IPC分类号： H01L33/10
CPC分类号： H01L33/30 , H01L33/10 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。第一电极层具有具有通孔的金属部分。第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。发光层设置在第一和第二半导体层之间。第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

2. 发明申请

US20130075778A1 LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE 有权
标题翻译：光发射金属电极，电子装置和发光装置
公开(公告)号：US20130075778A1
公开(公告)日：2013-03-28
申请号：US13407291
申请日：2012-02-28
申请人： Tsutomu NAKANISHI , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Koji ASAKAWA , Shinji NUNOTANI , Takanobu KAMAKURA
发明人： Tsutomu NAKANISHI , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Koji ASAKAWA , Shinji NUNOTANI , Takanobu KAMAKURA
IPC分类号： H01L33/40 , H01B5/00 , B82Y99/00
CPC分类号： B82Y20/00 , B82Y40/00 , H01L33/42 , H01L51/5209
摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.
摘要翻译：根据一个实施例，透光金属电极包括金属层。金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

3. 发明申请

US20120228654A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120228654A1
公开(公告)日：2012-09-13
申请号：US13221326
申请日：2011-08-30
申请人： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji Asakawa , Takanobu KAMAKURA , Shinji NUNOTANI
发明人： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji Asakawa , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

4. 发明申请

US20130081683A1 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：光电转换元件及其制造方法
公开(公告)号：US20130081683A1
公开(公告)日：2013-04-04
申请号：US13628738
申请日：2012-09-27
申请人： Kumi MASUNAGA , Akira FUJIMOTO , Eishi TSUTSUMI , Koji ASAKAWA , Tsutomu NAKANISHI , Hideyuki NISHIZAWA , Ryota KITAGAWA
发明人： Kumi MASUNAGA , Akira FUJIMOTO , Eishi TSUTSUMI , Koji ASAKAWA , Tsutomu NAKANISHI , Hideyuki NISHIZAWA , Ryota KITAGAWA
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/06 , H01L31/03529 , H01L31/0384 , H01L31/073 , H01L31/0735 , H01L31/18 , Y02E10/543 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.
摘要翻译：本发明提供一种通过使用增强的电场在传播载流子激发中具有高效率的光电转换元件。光电转换元件包括光电转换层，该光电转换层包括放置在两个电极层之间的两个或多个层叠半导体层，其特征在于，在光电转换层中的半导体层之间具有电场增强层。电场增强层设置有金属微细结构，微细结构例如为多孔膜或一组纳米物体，例如非常小的球体。

5. 发明申请

US20100236620A1 THIN FILM SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20100236620A1
公开(公告)日：2010-09-23
申请号：US12706338
申请日：2010-02-16
申请人： Tsutomu NAKANISHI , Eishi Tsutsumi , Akira Fujimoto , Kumi Masunaga , Ryota Kitagawa , Koji Asakawa , Hideyuki Nishizawa
发明人： Tsutomu NAKANISHI , Eishi Tsutsumi , Akira Fujimoto , Kumi Masunaga , Ryota Kitagawa , Koji Asakawa , Hideyuki Nishizawa
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022433 , H01L31/075 , Y02E10/548
摘要： According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 μm2. The opening ratio is in the range of 10% to 66%.
摘要翻译：根据本发明的一个方面，提供了一种薄膜太阳能电池，其包括基板，形成在所述基板上的光电转换层，所述光电转换层的厚度为1μm以下，所述光电转换层包括 p型半导体层，n型半导体层，并且是位于所述p型半导体层和所述n型半导体层之间的i型半导体层，形成在光入射表面上的光入射侧电极层的所述光电转换层和形成在与所述光入射表面相对的表面上的对电极层。所述光入射侧电极层具有贯穿所述层的多个开口，其厚度在10nm至200nm的范围内。每个所述开口占据80nm 2至0.8μm2的面积。开口率在10％至66％的范围内。

6. 发明申请

US20090176015A1 ANTIREFLECTION STRUCTURE FORMATION METHOD AND ANTIREFLECTION STRUCTURE 有权
标题翻译：抗逆结构形成方法与抗逆结构
公开(公告)号：US20090176015A1
公开(公告)日：2009-07-09
申请号：US12347187
申请日：2008-12-31
申请人： Tsutomu NAKANISHI , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
发明人： Tsutomu NAKANISHI , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
IPC分类号： B05D5/02 , B05C19/00 , G02B1/11
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译：本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。此外，本发明还提供了通过该方法形成的抗反射结构。在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。也可以通过使用压模的纳米压印方法制造抗反射结构。通过使用根据上述形成方法制造的母版形成压模。

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