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    • 4. 发明授权
    • Phase difference element and method for manufacturing the same
    • 相位差元件及其制造方法
    • US08842365B2
    • 2014-09-23
    • US13473100
    • 2012-05-16
    • Nobuyuki KoikeMasatoshi SasakiNaoki HanashimaAkio TakadaTakatoshi Yamada
    • Nobuyuki KoikeMasatoshi SasakiNaoki HanashimaAkio TakadaTakatoshi Yamada
    • G02B1/10G02B1/11
    • G02B1/115
    • A phase difference element capable of reducing reflection of incident light and a manufacturing method for the phase difference element are disclosed. The phase difference element includes a transparent substrate 11, an interface anti-reflection film group 12 and an obliquely vapor deposited film 13. The interface anti-reflection film group is composed by one or more of alternately high and low refractive index films, with the film thicknesses of the respectively films being equal to or less than the wavelength of light in use. The obliquely vapor deposited film is formed by a plurality of layers of a dielectric material. These layers are alternately obliquely vapor deposited from two directions differing by 180° from each other. The refractive index of the interface anti-reflection film group 12 is higher than the refractive index of the transparent substrate 11 and lesser than that of the obliquely vapor deposited film 13.
    • 公开了能够减少入射光反射的相位差元件和相位差元件的制造方法。 相位差元件包括透明基板11,界面防反射膜组12和倾斜气相沉积膜13.界面抗反射膜组由交替高和低折射率膜中的一个或多个组成,其中 各膜的膜厚度等于或小于使用的光的波长。 倾斜蒸镀膜由多层电介质材料形成。 这些层从彼此相差180°的两个方向交替倾斜蒸镀。 界面抗反射膜组12的折射率高于透明基板11的折射率,并且小于倾斜气相沉积膜13的折射率。
    • 5. 发明申请
    • PHASE DIFFERENCE ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    • 相差元件及其制造方法
    • US20120293732A1
    • 2012-11-22
    • US13473100
    • 2012-05-16
    • Nobuyuki KoikeMasatoshi SasakiNaoki HanashimaAkio TakadaTakatoshi Yamada
    • Nobuyuki KoikeMasatoshi SasakiNaoki HanashimaAkio TakadaTakatoshi Yamada
    • G02F1/1335B05D5/06G02B1/11
    • G02B1/115
    • A phase difference element capable of reducing reflection of incident light and a manufacturing method for the phase difference element are disclosed. The phase difference element includes a transparent substrate 11, an interface anti-reflection film group 12 and an obliquely vapor deposited film 13. The interface anti-reflection film group is composed by one or more of alternately high and low refractive index films, with the film thicknesses of the respectively films being equal to or less than the wavelength of light in use. The obliquely vapor deposited film is formed by a plurality of layers of a dielectric material. These layers are alternately obliquely vapor deposited from two directions differing by 180° from each other. The refractive index of the interface anti-reflection film group 12 is higher than the refractive index of the transparent substrate 11 and lesser than that of the obliquely vapor deposited film 13 (FIG. 1).
    • 公开了能够减少入射光反射的相位差元件和相位差元件的制造方法。 相位差元件包括透明基板11,界面防反射膜组12和倾斜气相沉积膜13.界面抗反射膜组由交替高和低折射率膜中的一个或多个组成,其中 各膜的膜厚度等于或小于使用的光的波长。 倾斜蒸镀膜由多层电介质材料形成。 这些层从彼此相差180°的两个方向交替倾斜蒸镀。 界面抗反射膜组12的折射率高于透明基板11的折射率,并且小于倾斜气相沉积膜13(图1)的折射率。
    • 9. 发明申请
    • PHOSPHORUS-DOPED DIAMOND FILM ALLOWING SIGNIFICANTLY REDUCED ELECTRON EMISSION VOLTAGE, METHOD FOR PRODUCING THE SAME, AND ELECTRON SOURCE USING THE SAME
    • 具有显着降低电子发射电压的磷光体金刚石膜,其制造方法和使用该电极的电子源
    • US20090167139A1
    • 2009-07-02
    • US12066976
    • 2006-08-28
    • Takatoshi YamadaShinichi Shikata
    • Takatoshi YamadaShinichi Shikata
    • H01J19/02C30B23/02H01B1/00
    • H01J9/025C23C16/274C23C16/278H01J1/304H01J2201/30457
    • According to the present invention, a phosphorus-doped diamond film allowing a significantly reduced electron emission voltage, a method for producing the same, and a diamond electron source using the same, such diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage, are provided. Also, a method for producing a phosphorus-doped diamond film, comprising growing a diamond film on a diamond substrate by a microwave CVD method in an atmosphere containing gases (methane and hydrogen) and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorous, such diamond film containing phosphorus at a concentration of 1015 cm−3 or more, having a resistivity of 107 Ωcm or less, and allowing a voltage for initiation of electron emission to be 30 V or less, and a diamond electron source using the same are provided. In such diamond film, the electron emission voltage is significantly reduced.
    • 根据本发明,能够显着降低电子发射电压的磷掺杂金刚石薄膜,其制造方法和使用该方法的金刚石电子源,具有稳定和优异的电子发射特性的金刚石电子源,其可以 用于可低压操作的冷阴极表面结构。 另外,一种磷掺杂金刚石膜的制造方法,其特征在于,在含有气体(甲烷和氢)和磷的气氛中,通过微波CVD法在金刚石基板上生长金刚石膜,使用叔丁基磷作为 加入磷,这种金刚石膜含有浓度为1015cm-3或更高的磷,具有107Ω·米或更小的电阻率,并允许电子发射的电压为30V或更小,金刚石电子源 提供使用它们。 在这种金刚石膜中,电子发射电压显着降低。