专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4954855A Thin film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US4954855A
公开(公告)日：1990-09-04
申请号：US113360
申请日：1987-10-28
申请人： Akio Mimura , Yoshikazu Hosokawa , Takaya Suzuki , Takashi Aoyama , Nobutake Konishi , Yutaka Misawa , Kenji Miyata
发明人： Akio Mimura , Yoshikazu Hosokawa , Takaya Suzuki , Takashi Aoyama , Nobutake Konishi , Yutaka Misawa , Kenji Miyata
IPC分类号： H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/456 , H01L29/458 , H01L29/4908 , H01L29/7866 , H01L29/78675
摘要： A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.
摘要翻译：公开了一种形成在绝缘硅片上的薄膜晶体管，其中金属硅化物层形成在由单晶，多晶或非晶半导体材料制成的薄膜中，用作源极和漏极区域，并且还包括一个栅电极金属硅化物层。

2. 发明授权

US5153702A Thin film semiconductor device and method for fabricating the same 失效
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US5153702A
公开(公告)日：1992-10-06
申请号：US203935
申请日：1988-06-08
申请人： Takashi Aoyama , Nobutake Konishi , Takaya Suzuki , Kenji Miyata , Saburo Oikawa , Yoshiaki Okajima , Genshiro Kawachi , Eimi Adachi
发明人： Takashi Aoyama , Nobutake Konishi , Takaya Suzuki , Kenji Miyata , Saburo Oikawa , Yoshiaki Okajima , Genshiro Kawachi , Eimi Adachi
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/04 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/1229 , H01L29/045 , H01L29/78675 , G02F1/1368 , G02F2202/104
摘要： This invention relates to a thin film semiconductor device and a method for fabricating it, and more particularly a thin film semiconductor device suitably applicable to a display device in an active matrix system and a method for fabricating it. In this invention, the structure of a thin film semiconductor device for improving the characteristic thereof and particularly the structure relative to the dominant orientation of a poly-Si film as an active layer of a thin film transistor (TFT) is disclosed. A method for fabricating a thin film semiconductor device which is capable of forming a poly-Si film at a relatively low process temperature is disclosed. Further, a display device in an active matrix system which provided high performance and high image quality is disclosed. The poly-Si film having a dominant orientation of (111) is formed by forming a poly-Si film on the semiconductor substrate at a temperature up to 570.degree. C. and annealing the substrate at a temperature up to 640.degree. C.
摘要翻译：本发明涉及一种薄膜半导体器件及其制造方法，更具体地说，涉及适用于有源矩阵系统中的显示装置的薄膜半导体器件及其制造方法。在本发明中，公开了用于改善其特性的薄膜半导体器件的结构，特别是关于作为薄膜晶体管（TFT）的有源层的多晶硅膜的主导方向的结构。公开了一种能够在较低处理温度下形成多晶硅薄膜的薄膜半导体器件的制造方法。此外，公开了提供高性能和高图像质量的有源矩阵系统中的显示装置。通过在半导体衬底上在高达570℃的温度下形成多晶硅膜，并在高达640℃的温度下对衬底进行退火，形成具有（111）主导取向性的多晶硅膜。

3. 发明授权

US5367171A Electron microscope specimen holder 失效
标题翻译：电子显微镜样品架
公开(公告)号：US5367171A
公开(公告)日：1994-11-22
申请号：US965423
申请日：1992-10-23
申请人： Takashi Aoyama , Kishu Hosoi , Yutaka Misawa , Koji Kimoto , Shigeto Isakozawa , Kazuhiro Ueda
发明人： Takashi Aoyama , Kishu Hosoi , Yutaka Misawa , Koji Kimoto , Shigeto Isakozawa , Kazuhiro Ueda
IPC分类号： H01J37/20
CPC分类号： H01J37/20
摘要： A specimen cartridge fashioned of a good thermal conductor, with an outer frame being fashioned of heat insulating material, and with a connecting rod being fashioned of a poor thermal conductor. A temperature distribution of the specimen is uniform and a temperature drift is reduced, with a thermal expansion of a specimen cartridge tilting rod not affecting the tilting angle, thereby making it possible to perform various highly accurate observations and measurements with an electron microscope.
摘要翻译：由良好的热导体形成的样品盒，外框由绝热材料制成，并且连接杆由不良的导热体构成。样品盒的温度分布是均匀的并且温度漂移降低，而样品盒倾斜杆的热膨胀不影响倾斜角度，从而可以用电子显微镜进行各种高精度的观测和测量。

4. 发明授权

US5350921A Analytical electron microscope and a method of operating such an electron microscope 失效
标题翻译：分析电子显微镜和操作这种电子显微镜的方法
公开(公告)号：US5350921A
公开(公告)日：1994-09-27
申请号：US94955
申请日：1993-07-23
申请人： Takashi Aoyama , Yutaka Misawa
发明人： Takashi Aoyama , Yutaka Misawa
IPC分类号： H01J37/252 , H01J37/26 , H01J37/295 , H01J49/26 , G01N23/00
CPC分类号： H01J37/252 , H01J37/265
摘要： An analytical electron microscope automatically identifies objects in a sample on the basis of shape of the object, change of thickness of the object and/or change of element (such as change of element type or concentration). Therefore, the operator of the analytical electron microscope can specify a desired object, and an example or examples of that object in a sample can be identified automatically. The characteristics need to identify the object are determined by detecting the effect of the sample on the electron beam of the analytical electron microscope, using, for example, an energy dispersive type X-ray analyzer and an electron energy loss spectrometer. Once an example of the object has been identified, it may be analyzed further. The analytical electron microscope may also analyze a sample to identify and classify the objects present.
摘要翻译：分析电子显微镜根据物体的形状，物体的厚度变化和/或元素的变化（例如元件类型或浓度的变化）自动识别样品中的物体。因此，分析电子显微镜的操作者可以指定期望的对象，并且可以自动识别样品中的该对象的示例或示例。通过使用例如能量色散型X射线分析仪和电子能量损失光谱仪，通过检测样品对分析电子显微镜的电子束的影响来确定对象的特征。一旦已经识别出对象的示例，则可以进一步分析该对象的示例。分析电子显微镜还可以分析样品以鉴别和分类存在的物体。

5. 发明授权

US4388342A Method for chemical vapor deposition 失效
标题翻译：化学气相沉积方法
公开(公告)号：US4388342A
公开(公告)日：1983-06-14
申请号：US154025
申请日：1980-05-28
申请人： Takaya Suzuki , Yosuke Inoue , Takashi Aoyama
发明人： Takaya Suzuki , Yosuke Inoue , Takashi Aoyama
IPC分类号： C30B25/16 , C23C16/455 , C23C16/52 , H01L21/205 , H01L21/31 , B05D5/12
CPC分类号： H01L21/02532 , C23C16/455 , C23C16/52 , H01L21/02381 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10T436/12
摘要： A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.
摘要翻译：通过CVD技术在支撑在反应室内的多个基板的表面上形成具有良好均匀性和再现性的材料层的方法。本发明的特征是含有反应气体的气体混合物以预定的控制方式从反应室的入口和设置在入口和排气口之间的辅助气体喷嘴供入反应室。此外，反应室内的气体混合物的一部分从气流中取样以测量反应气体的浓度，并且从测量结果确定来自辅助气体喷嘴的气体供应速率。

6. 发明申请

US20110076580A1 FUEL CELL SYSTEM, AND METHOD OF STOPPING FUEL CELL SYSTEM 有权
标题翻译：燃料电池系统和燃料电池系统的停止方法
公开(公告)号：US20110076580A1
公开(公告)日：2011-03-31
申请号：US12996532
申请日：2009-06-04
申请人： Ryoichi Shimoi , Hayato Chikugo , Mitsunori Kumada , Takashi Aoyama
发明人： Ryoichi Shimoi , Hayato Chikugo , Mitsunori Kumada , Takashi Aoyama
IPC分类号： H01M8/04
CPC分类号： H01M8/04783 , H01M8/04197 , H01M8/04223 , H01M8/04225 , H01M8/04228 , H01M8/04302 , H01M8/04303 , H01M8/04328 , H01M8/04335 , H01M8/04388 , H01M8/04395 , H01M8/04425 , H01M8/04455 , H01M8/0447 , H01M8/04559 , H01M8/04589 , H01M8/04798 , H01M8/04805 , H01M8/04955 , H01M8/04992 , H01M8/0662 , H01M2008/1095 , Y02E60/50
摘要： For implementing a stop control which extracts a current from a fuel cell and consumes a cathode side oxygen at a system stop, the current extraction from the fuel cell is ended in a state that a certain quantity of oxygen smaller than when the current extraction is started remains on a cathode side of the fuel cell. With this, the hydrogen movement to the cathode side after the system stop can be effectively suppressed and thereby a cathode internal hydrogen concentration at the system start can be kept low, thus making it possible to properly process the cathode side hydrogen at the system start.
摘要翻译：为了实现从燃料电池提取电流并在系统停止时消耗阴极侧氧气的停止控制，在燃料电池的电流提取在比当前提取开始时少一定量的氧气的状态下结束保留在燃料电池的阴极侧。由此，可以有效地抑制系统停止后的向阴极侧的氢运动，从而可以将系统起动时的阴极内部氢浓度保持为低，从而可以在系统启动时适当地处理阴极侧氢。

7. 发明授权

US07348245B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07348245B2
公开(公告)日：2008-03-25
申请号：US11443257
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L21/8234
CPC分类号： H01L27/11568 , G11C11/005 , G11C16/0466 , H01L27/105 , H01L27/11573 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Manufacturing method of a semiconductor device for forming a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, including forming a gate insulating film over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the gate electrode associated with each of the first through third field effect transistors. The sidewall spacers of at least the first field effect transistor have a different width than that of at least the second field effect transistor, the gate electrode of the third field effect transistor has a different length than that of at least the first field effect transistor for memory and the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor.
摘要翻译：一种半导体器件的制造方法，用于形成包括用于存储器的第一场效应晶体管的可重写非易失性存储单元，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，包括在半导体衬底上形成栅极绝缘膜栅极绝缘膜上的栅电极和与第一至第三场效应晶体管中的每一个相关联的栅电极的侧壁上的侧壁隔离物。至少第一场效应晶体管的侧壁间隔物具有与至少第二场效应晶体管不同的宽度，第三场效应晶体管的栅电极具有与至少第一场效应晶体管不同的长度，存储器和第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的厚度。

8. 发明申请

US20060214256A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060214256A1
公开(公告)日：2006-09-28
申请号：US11443252
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L29/00
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor device having a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, the transistors each including a gate insulating film formed over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the corresponding gate electrode. Sidewall spacers of the first field effect transistor are different from those of at least the second field effect transistors. Also, the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor and the gate electrode of the third field effect transistor has a length different from that of either the first field effect transistor or second field effect transistor. The sidewall spacers of the first field effect transistor include a first silicon oxide film, a first silicon nitride film over the first silicon oxide film and a second silicon oxide film over the first silicon nitride film.
摘要翻译：一种半导体器件，具有可重写非易失性存储单元，其包括用于存储的第一场效应晶体管，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，所述晶体管包括形成在半导体衬底上的栅极绝缘膜，在栅极绝缘膜上方的栅电极和相应栅电极的侧壁上的侧壁间隔物。第一场效应晶体管的侧壁间隔物与至少第二场效应晶体管的侧壁间隔物不同。此外，第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的栅极绝缘膜，第三场效应晶体管的栅电极的长度与第一场效应晶体管或第二场效应晶体管的长度不同效应晶体管。第一场效应晶体管的侧壁间隔物包括第一氧化硅膜，第一氧化硅膜上的第一氮化硅膜和位于第一氮化硅膜上的第二氧化硅膜。

9. 发明授权

US06933501B2 Ultimate analyzer, scanning transmission electron microscope and ultimate analysis method 有权
标题翻译：终极分析仪，扫描透射电子显微镜和最终分析方法
公开(公告)号：US06933501B2
公开(公告)日：2005-08-23
申请号：US10798306
申请日：2004-03-12
申请人： Kazutoshi Kaji , Takashi Aoyama , Shunroku Taya , Hiroyuki Tanaka , Shigeto Isakozawa
发明人： Kazutoshi Kaji , Takashi Aoyama , Shunroku Taya , Hiroyuki Tanaka , Shigeto Isakozawa
IPC分类号： G01N23/04 , G01N23/20 , H01J37/256 , H01J37/26 , H11J37/153
CPC分类号： G01N23/04 , G01N23/20 , H01J37/05 , H01J37/244 , H01J37/256 , H01J37/265 , H01J37/28 , H01J2237/057 , H01J2237/24475 , H01J2237/24485 , H01J2237/24495 , H01J2237/2522 , H01J2237/2802 , H01J2237/2804 , H01J2237/2809
摘要： The present invention provides an ultimate analyzer which displays an element distribution image of an object with high contrast and high accuracy. A scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer is also provided. The ultimate analyzer comprises a scattered electron beam detector for detecting an electron beam scattered by an object; an electron spectrometer for energy dispersing an electron beam transmitted through the object; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector.
摘要翻译：本发明提供了一种显示具有高对比度和高精度的对象的元素分布图像的终极分析器。还提供扫描透射电子显微镜和使用极限分析仪分析元件的方法。最终分析仪包括用于检测被物体散射的电子束的散射电子束检测器; 用于能量分散透过物体的电子束的电子能谱仪; 用于检测所述分散的电子束的电子束检测器; 以及用于基于由电子束检测器检测的电子束的输出信号和由散射电子束检测器检测的电子束的输出信号来分析元件的控制单元。

10. 发明授权

US06898507B2 Vehicle speed control system 失效
标题翻译：车速控制系统
公开(公告)号：US06898507B2
公开(公告)日：2005-05-24
申请号：US10406277
申请日：2003-04-04
申请人： Takashi Aoyama , Shigeki Fukushima , Ryoji Kato
发明人： Takashi Aoyama , Shigeki Fukushima , Ryoji Kato
IPC分类号： B60K31/00 , B60K31/04 , B60W50/00 , F02D29/02 , F02D31/00 , F02D41/04 , F02D41/24 , F02D41/26 , B60K41/00 , F02M51/00
CPC分类号： F02D41/266 , B60K31/047 , B60W2050/0005 , B60W2050/0044 , B60W2710/0605 , B60W2710/0616 , F02D31/001 , F02D41/1402 , F02D41/2451 , F02D2041/1409 , F02D2041/1422
摘要： A vehicle speed control system includes a first electronic control unit for transmitting a difference between actual and target vehicle speeds and control constants that vary depending on the vehicle speed difference when it determines fulfillment of vehicle speed control conditions, and a second electronic control unit for performing the vehicle speed control based on the vehicle speed difference and control constants received through a communication line. Change of the control constants for adjustment of a vehicle speed control function of the system can be easily carried out by changing the control constants stored in the first electronic control unit.
摘要翻译：一种车辆速度控制系统，包括：第一电子控制单元，用于当确定实现车速控制条件时，发送实际车速与实际车速之间的差异以及根据车速差而变化的控制常数;以及第二电子控制单元，用于执行基于通过通信线路接收的车速差和控制常数的车速控制。可以通过改变存储在第一电子控制单元中的控制常数来容易地执行用于调整系统的车速控制功能的控制常数的变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式