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1. 发明申请

US20100006836A1 EPITAXIAL GROWTH METHOD, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE 有权
标题翻译：外延生长方法，外延晶体结构，外延晶体生长装置和半导体器件
公开(公告)号：US20100006836A1
公开(公告)日：2010-01-14
申请号：US12493765
申请日：2009-06-29
申请人： Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
发明人： Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
IPC分类号： H01L29/12 , H01L21/04 , C30B25/02 , C23C16/06
CPC分类号： C23C16/407 , C23C16/0272 , C30B25/183 , C30B25/20 , C30B29/16 , H01L21/0237 , H01L21/0242 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/0262 , H01L21/02634 , H01L29/22
摘要： It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate. It is provided a ZnO based semiconductor, a fabrication method for a ZnO based semiconductor, and an apparatus for fabricating a ZnO based semiconductor, and the method includes introducing reactant gas mixing halogenated group II metallic gas including zinc and oxygen containing gas on one of a substrate and a semiconductor layer; and introducing hydride gas of group V as p type impurity material gas on one of the substrate and the semiconductor layer, wherein crystal growth of the zinc oxide based semiconductor layer doped with a p type impurity is performed on one of the substrate and the semiconductor layer, preventing mixing of the impurity which is not aimed and doping a p type impurity enough also at high temperature.
摘要翻译：提供了异质外延生长方法，异质外延晶体结构，异质外延生长装置和半导体器件，该方法包括形成由氧化物的取向膜形成的缓冲层或在异质外延生长方法上的氮化物取向膜基质; 并且使用卤化II族金属和氧材料在缓冲层上进行氧化锌基半导体层的晶体生长。提供同质外延生长方法，同质外延晶体结构，同质外延生长装置和半导体器件，同质外延生长方法包括将含有锌的气体和含氧气体的反应气体引入到氧化锌衬底上; 并且在氧化锌衬底上进行氧化锌基半导体层的晶体生长。提供了一种ZnO基半导体，一种用于ZnO基半导体的制造方法和一种用于制造ZnO基半导体的装置，该方法包括将包含锌和含氧气体的卤化II族金属气体混合在一起的反应气体衬底和半导体层; 并且在基板和半导体层之一上引入第V族氢化物气体作为p型杂质材料气体，其中在衬底和半导体层之一上进行掺杂有p型杂质的氧化锌基半导体层的晶体生长，防止在高温下混入不是目标的杂质和掺杂的p型杂质。

2. 发明授权

US08822263B2 Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device 有权
标题翻译：氧化锌基半导体层的外延生长方法，外延晶体结构，外延晶体生长装置和半导体器件
公开(公告)号：US08822263B2
公开(公告)日：2014-09-02
申请号：US12493765
申请日：2009-06-29
申请人： Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
发明人： Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
IPC分类号： H04L21/00
CPC分类号： C23C16/407 , C23C16/0272 , C30B25/183 , C30B25/20 , C30B29/16 , H01L21/0237 , H01L21/0242 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/0262 , H01L21/02634 , H01L29/22
摘要： It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.
摘要翻译：提供了异质外延生长方法，异质外延晶体结构，异质外延生长装置和半导体器件，该方法包括形成由氧化物的取向膜形成的缓冲层或在异质外延生长方法上的氮化物取向膜基质; 并且使用卤化II族金属和氧材料在缓冲层上进行氧化锌基半导体层的晶体生长。提供同质外延生长方法，同质外延晶体结构，同质外延生长装置和半导体器件，同质外延生长方法包括将含有锌的气体和含氧气体的反应气体引入到氧化锌衬底上; 并且在氧化锌衬底上进行氧化锌基半导体层的晶体生长。

3. 发明授权

US07645340B2 Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor 有权
标题翻译：含Al的III-V族化合物半导体的气相生长方法，以及制造含有Al的III-V族化合物半导体的方法和装置
公开(公告)号：US07645340B2
公开(公告)日：2010-01-12
申请号：US10509177
申请日：2003-04-07
申请人： Akinori Koukitu , Yoshinao Kumagai , Tomohiro Marui
发明人： Akinori Koukitu , Yoshinao Kumagai , Tomohiro Marui
IPC分类号： C30B25/00
CPC分类号： C30B25/02 , C23C16/303 , C30B25/14 , C30B29/403 , Y10T117/10 , Y10T117/1016
摘要： A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.
摘要翻译：通过常规HVPE法生长含Al III-V族化合物半导体的晶体的方法，其特征在于它包括在700℃或更低的温度下使Al与卤化氢反应形成卤化物的步骤的Al 该方法允许抑制氯化铝（AlCl）或溴化铝（AlBr）的形成，其与作为用于生长的反应容器的材料的石英剧烈反应，导致实现Al的气相生长含有III-V族化合物半导体，其速率为100微米/小时或更高，这导致大量生产基板和具有令人满意的耐恶劣环境的半导体元件。

4. 发明授权

US08926752B2 Method of producing a group III nitride crystal 有权
标题翻译：制造III族氮化物晶体的方法
公开(公告)号：US08926752B2
公开(公告)日：2015-01-06
申请号：US12526685
申请日：2008-02-27
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： C30B25/00 , C30B29/40 , C30B25/10 , C30B25/18
CPC分类号： C30B29/403 , C30B25/10 , C30B25/18
摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
摘要翻译：提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

5. 发明申请

US20110094438A1 LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：层压体及其生产方法
公开(公告)号：US20110094438A1
公开(公告)日：2011-04-28
申请号：US12812872
申请日：2009-01-09
申请人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
发明人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
IPC分类号： C30B25/10
CPC分类号： C30B25/18 , C30B25/183 , C30B29/403
摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.
摘要翻译：本发明提供一种自支撑基板，其通过以下步骤获得：在由无机物的单晶制成的基底基板上形成厚度在3〜200nm范围内的Al系III族氮化物薄层在惰性气体气氛中在800℃下基本上不分解的物质，当与800-1600℃的温度范围内的还原气体例如蓝宝石接触时，其通过分解产生挥发物; 通过在800-1600℃的温度范围内在含有氨的还原气体气氛中热处理层压基板，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙加油站; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其中晶体具有大的曲率半径。

6. 发明申请

US20110018104A1 METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产具有基于Al的III族氮化物单晶层的层压体的方法，通过该方法生产的层压体，生产使用层合体的基于Al的III族氮化物单晶基板的方法和氮化钛单晶基板
公开(公告)号：US20110018104A1
公开(公告)日：2011-01-27
申请号：US12812885
申请日：2008-12-16
申请人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
发明人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
IPC分类号： H01L29/20 , C30B23/02 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 μm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.
摘要翻译：本发明是一种层叠体的制造方法，其特征在于，包括以下工序：（1）制作具有与构成所述Al系III族氮化物单晶层的材料不同的单晶的表面的基底基板要形成（2）在所制备的基板的单晶面上形成厚度为10nm〜1.5μm的Al系III族氮化物单晶层; （3）在Al系III族氮化物单晶层上形成比Al系III族氮化物单晶层厚100倍以上的非单晶层，而不会破坏先前获得的Al基团 -III氮化物单晶层; 和（4）去除基底。该方法提供了可以适合用作用于制造Al基III族氮化物单晶自支撑衬底的基底的衬底，其表面由Al基III族氮化物的单晶形成，并且没有开裂和翘曲。

7. 发明授权

US07843040B2 Gallium nitride baseplate and epitaxial substrate 有权
标题翻译：氮化镓基板和外延基板
公开(公告)号：US07843040B2
公开(公告)日：2010-11-30
申请号：US12326108
申请日：2008-12-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将诸如（0001）切割蓝宝石衬底的衬底（1）放置在金属有机氯化物气相装置（11）的基座上。接下来，使来自氯化氢源（15）的铁化合物源（13）和来自氯化氢源（15）的氯化氢气体G1HCl的气态铁化合物GFe在混合容器（16）中彼此反应，生成气体GFeComp的含铁反应产物，如氯化铁（FeCl2）。与该产生相关，含铁反应产物GFeComp，含有氮源（17）的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa被供给到反应管（21）中，在衬底（1）上的掺杂氮化镓（23）。

8. 发明申请

US20070215982A1 Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Forming Gallium Nitride 失效
标题翻译：氮化镓基板，外延基板和形成氮化镓的方法
公开(公告)号：US20070215982A1
公开(公告)日：2007-09-20
申请号：US11276966
申请日：2006-03-20
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将具有（0001）面的蓝宝石衬底等基板1放置在金属有机氯化物气相装置11的基座上。接下来，使来自氯化氢源15的铁化合物诸如二茂铁和氯化氢气体的来源13的气态铁化合物G 1 Fe < 彼此混合在混合容器16中以产生含铁反应产物如氯化铁（FeCl 2）的气体G FeCl 2。与该产生相关联，来自氮源17的含铁反应产物G FeCO 2，含有元素氮的第一物质气体G N N和第二物质气体G

9. 发明申请

US20150247260A1 HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND DEVICES MADE THEREFROM 有权
标题翻译：高透明度的氮化铝单晶层及其制造的器件
公开(公告)号：US20150247260A1
公开(公告)日：2015-09-03
申请号：US14422888
申请日：2012-08-23
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Toru Kinoshita , Yuki Kubota , Rafael F. Dalmau , Jinqiao Xie , Baxter F. Moody , RAOUL Schlesser , Zlatko Sitar
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Toru Kinoshita , Yuki Kubota , Rafael F. Dalmau , Jinqiao Xie , Baxter F. Moody , RAOUL Schlesser , Zlatko Sitar
IPC分类号： C30B25/20 , C30B29/40 , H01L33/00 , H01L33/32 , H01L33/18 , C30B25/14 , C01B21/072
CPC分类号： C30B25/20 , C01B21/072 , C01P2006/60 , C30B25/14 , C30B25/165 , C30B29/403 , H01L33/0075 , H01L33/02 , H01L33/18 , H01L33/32 , Y10T428/26
摘要： The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
摘要翻译：本发明提供了高透明度的单晶AlN层作为用于发光二极管的器件衬底，以便改善发光器件的输出和操作劣化。高透明度的单晶AlN层在波长265nm下的a轴方向的折射率在2.250〜2.400的范围内，吸收系数小于或等于15cm -1。本发明还提供一种生长高度透明的单晶AlN层的方法，所述方法包括以下步骤：将在反应器流道中形成的壁沉积物中所含的Al的量保持在低于或等于30％供给到反应器中的铝的总量，以及将流动通道中的壁温保持在小于或等于1200℃。

10. 发明申请

US20140346638A1 Single-Crystalline Aluminum Nitride Substrate and a Manufacturing Method Thereof 有权
标题翻译：单晶氮化铝基板及其制造方法
公开(公告)号：US20140346638A1
公开(公告)日：2014-11-27
申请号：US14366020
申请日：2011-12-22
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Yuki Hiraren
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Yuki Hiraren
IPC分类号： H01L33/34 , H01L33/00
CPC分类号： H01L33/343 , C30B23/00 , C30B25/02 , C30B25/08 , C30B29/403 , H01L21/0254 , H01L33/0054
摘要： The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm−1 or less.
摘要翻译：本发明涉及碳浓度为1×1014原子/ cm3以上且小于3×1017原子/ cm3，氯浓度为1×1014〜1×1017原子/ cm3的单晶氮化铝，以及在265nm波长处的吸收系数为40cm -1以下。

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