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1. 发明申请

US20100215987A1 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
标题翻译：氮化铝单晶膜，氮化铝单晶多层基板及其制造方法
公开(公告)号：US20100215987A1
公开(公告)日：2010-08-26
申请号：US11989841
申请日：2006-08-01
申请人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
IPC分类号： B32B9/04 , C30B25/10 , C01B21/072
CPC分类号： C30B29/403 , C30B1/10 , C30B25/02
摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
摘要翻译：在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

2. 发明授权

US07528462B2 Aluminum nitride single-crystal multi-layered substrate 失效
标题翻译：氮化铝单晶多层基板
公开(公告)号：US07528462B2
公开(公告)日：2009-05-05
申请号：US11347236
申请日：2006-02-06
申请人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
IPC分类号： H01L31/032 , H01L31/0368
CPC分类号： C30B25/183 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.
摘要翻译：一种氮化铝单晶多层基板，其包括通过直接还原氮化在单晶α-氧化铝基板如蓝宝石基板和厚度为10nm的边缘型位错层上形成的氮化铝单晶层或更小的两个晶体之间的界面附近。在表面存在的氮化铝单晶层中很少存在穿透位错。作为半导体器件基板是有用的。

3. 发明申请

US20060175619A1 Aluminum nitride single-crystal multi-layered substrate 失效
公开(公告)号：US20060175619A1
公开(公告)日：2006-08-10
申请号：US11347236
申请日：2006-02-06
申请人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Shinya Kusunoki , Katsuhito Nakamura , Kazuya Takada , Akira Hakomori
IPC分类号： H01L33/00
CPC分类号： C30B25/183 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.

4. 发明授权

US07338555B2 Highly crystalline aluminum nitride multi-layered substrate and production process thereof 失效
标题翻译：高结晶氮化铝多层基板及其制造方法
公开(公告)号：US07338555B2
公开(公告)日：2008-03-04
申请号：US10937344
申请日：2004-09-10
申请人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
IPC分类号： C30B25/00
CPC分类号： C23C8/28 , C23C8/24 , C30B29/20 , C30B29/38 , C30B33/00
摘要： A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.
摘要翻译：包含按照上述顺序形成的单晶α-氧化铝基板，氮氧化铝层和高结晶氮化铝膜作为最外层的高结晶氮化铝多层基板，其中，氮氧化铝层具有螺纹位错密度为6.3×10 7 / cm 2以下，由其摇摆曲线的半值宽度表示的晶体取向为4,320arcsec以下; 及其制造方法。

5. 发明申请

US20050059257A1 Highly crystalline aluminum nitride multi-layered substrate and production process thereof 失效
标题翻译：高结晶氮化铝多层基板及其制造方法
公开(公告)号：US20050059257A1
公开(公告)日：2005-03-17
申请号：US10937344
申请日：2004-09-10
申请人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Wataru Nakao , Shinya Kusunoki , Kazuya Takada , Akira Hakomori
IPC分类号： C23C8/24 , C23C8/28 , C23C28/04 , C30B29/20 , C30B29/38 , C30B33/00 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/84
CPC分类号： C23C8/28 , C23C8/24 , C30B29/20 , C30B29/38 , C30B33/00
摘要： A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.
摘要翻译：包含按照上述顺序形成的单晶α-氧化铝基板，氮氧化铝层和高结晶氮化铝膜作为最外层的高结晶氮化铝多层基板，其中，氮氧化铝层具有螺纹位错密度为6.3×10 7 / cm 2以下，由其摇摆曲线的半值宽度表示的晶体取向为4,320arcsec以下; 及其制造方法。

6. 发明授权

US08137825B2 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
标题翻译：氮化铝单晶膜，氮化铝单晶多层基板及其制造方法
公开(公告)号：US08137825B2
公开(公告)日：2012-03-20
申请号：US11989841
申请日：2006-08-01
申请人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
IPC分类号： B32B9/00
CPC分类号： C30B29/403 , C30B1/10 , C30B25/02
摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
摘要翻译：在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

7. 发明申请

US20110094438A1 LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：层压体及其生产方法
公开(公告)号：US20110094438A1
公开(公告)日：2011-04-28
申请号：US12812872
申请日：2009-01-09
申请人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
发明人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
IPC分类号： C30B25/10
CPC分类号： C30B25/18 , C30B25/183 , C30B29/403
摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.
摘要翻译：本发明提供一种自支撑基板，其通过以下步骤获得：在由无机物的单晶制成的基底基板上形成厚度在3〜200nm范围内的Al系III族氮化物薄层在惰性气体气氛中在800℃下基本上不分解的物质，当与800-1600℃的温度范围内的还原气体例如蓝宝石接触时，其通过分解产生挥发物; 通过在800-1600℃的温度范围内在含有氨的还原气体气氛中热处理层压基板，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙加油站; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其中晶体具有大的曲率半径。

8. 发明申请

US20110018104A1 METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产具有基于Al的III族氮化物单晶层的层压体的方法，通过该方法生产的层压体，生产使用层合体的基于Al的III族氮化物单晶基板的方法和氮化钛单晶基板
公开(公告)号：US20110018104A1
公开(公告)日：2011-01-27
申请号：US12812885
申请日：2008-12-16
申请人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
发明人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
IPC分类号： H01L29/20 , C30B23/02 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 μm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.
摘要翻译：本发明是一种层叠体的制造方法，其特征在于，包括以下工序：（1）制作具有与构成所述Al系III族氮化物单晶层的材料不同的单晶的表面的基底基板要形成（2）在所制备的基板的单晶面上形成厚度为10nm〜1.5μm的Al系III族氮化物单晶层; （3）在Al系III族氮化物单晶层上形成比Al系III族氮化物单晶层厚100倍以上的非单晶层，而不会破坏先前获得的Al基团 -III氮化物单晶层; 和（4）去除基底。该方法提供了可以适合用作用于制造Al基III族氮化物单晶自支撑衬底的基底的衬底，其表面由Al基III族氮化物的单晶形成，并且没有开裂和翘曲。

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