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1. 发明授权

US4514512A Method for the production of solid titanium trichloride catalyst 失效
标题翻译：固体三氯化钛催化剂的生产方法
公开(公告)号：US4514512A
公开(公告)日：1985-04-30
申请号：US480648
申请日：1983-03-31
申请人： Akinobu Shiga , Yukio Naito , Toshio Sasaki , Junpei Kojima , Hiroshi Yoshioka , Akira Nunose
发明人： Akinobu Shiga , Yukio Naito , Toshio Sasaki , Junpei Kojima , Hiroshi Yoshioka , Akira Nunose
IPC分类号： C08F4/00 , C08F4/60 , C08F4/64 , C08F10/00
CPC分类号： C08F10/00
摘要： A method for the production of a solid titanium trichloride catalyst by the steps of preparing a titanium trichloride composition comprising a solid reduction product obtained by reducing titanium tetrachloride with an organoaluminum compound represented by the formula, R.sup.1.sub.n AlY.sub.3-n (wherein R.sup.1 is a hydrocarbon group having 1 to 18 carbon atoms; Y is a halogen atom or a hydrogen atom; and n is a number satisfying the equation, 1
摘要翻译：一种制备固体三氯化钛催化剂的方法，该方法包括制备三氯化钛组合物，该三氯化钛组合物包含通过用式R1nAlY3-n表示的有机铝化合物还原四氯化钛获得的固体还原产物（其中R1是具有 1至18个碳原子; Y是卤素原子或氢原子; n是满足式1的数，1

2. 发明授权

US4412049A Process for producing highly stereoregular .alpha.-olefin polymers 失效
标题翻译：制备高度立构规则的α-烯烃聚合物的方法
公开(公告)号：US4412049A
公开(公告)日：1983-10-25
申请号：US456560
申请日：1983-01-10
申请人： Akinobu Shiga , Yukio Naito , Toshio Sasaki , Junpei Kojima , Hiroshi Yoshioka
发明人： Akinobu Shiga , Yukio Naito , Toshio Sasaki , Junpei Kojima , Hiroshi Yoshioka
IPC分类号： C08F4/64 , C08F10/00 , C08F4/02 , C08F10/06
CPC分类号： C08F10/00
摘要： A process for producing highly stereoregular .alpha.-olefin polymers which comprises polymerizing .alpha.-olefins in the presence of a catalyst system comprising:(A) a solid catalyst obtained by contact reaction between(a) a solid product prepared by reacting an organo-magnesium compound with at least one of halogenated silicon compound (I) and halogenated aluminum compound (II) in a solvent and(b) a titanium compound having both titanium-aryloxy and titanium-halogen linkages, and(B) an organo-aluminum compound as an activating agent.
摘要翻译：一种制备高度立构规整的α-烯烃聚合物的方法，其包括在催化剂体系存在下聚合α-烯烃，该催化剂体系包含：（A）通过以下步骤获得的固体催化剂：（a）通过使有机镁化合物与卤化硅化合物（I）和卤化铝化合物（II）中的至少一种在溶剂中反应，和（b）具有钛 - 芳氧基和钛 - 卤素键的钛化合物，和（B）有机铝化合物活化剂。

3. 发明授权

US4254237A Process for producing propylene-ethylene block copolymers 失效
标题翻译：制备丙烯 - 乙烯嵌段共聚物的方法
公开(公告)号：US4254237A
公开(公告)日：1981-03-03
申请号：US30523
申请日：1979-04-16
申请人： Akinobu Shiga , Masahiro Kakugo , Hajime Sadatoshi , Kazuki Wakamatsu , Hiroshi Yoshioka
发明人： Akinobu Shiga , Masahiro Kakugo , Hajime Sadatoshi , Kazuki Wakamatsu , Hiroshi Yoshioka
IPC分类号： C08F297/00 , C08F297/08
CPC分类号： C08F297/086
摘要： A process for producing propylene-ethylene block copolymers by a three-step polymerization technique using a stereoregular catalyst, characterized in that the first-step polymerization is carried out by supplying propylene alone or a propylene/ethylene mixture so that the ethylene/propylene reaction ratio is 6/94 or less, thereby polymerizing 60 to 95% by weight of the total polymerization amount, the second-step polymerization is carried out by supplying a propylene/ethylene mixture so that the ethylene/propylene reaction ratio is 15/85 to 79/21, thereby polymerizing 1 to 20% by weight of the total polymerization amount, and the third-step polymerization is carried out by supplying a propylene/ethylene mixture so that the ethylene/propylene reaction ratio is 50/50 to 89/11, thereby polymerizing 4 to 35% by weight of the total polymerization amount, with the ethylene/propylene reaction ratio in the third step made larger than that in the second step. Said process can give propylene-ethylene block copolymers markedly well balanced in impact strength, stiffness, transparency and impact blushing.
摘要翻译：一种通过使用立体规则催化剂的三步聚合技术制备丙烯 - 乙烯嵌段共聚物的方法，其特征在于第一步聚合是通过仅供应丙烯或丙烯/乙烯混合物进行的，以使乙烯/丙烯反应比为6/94以下，由此聚合60〜95重量％的总聚合量，第二步聚合是通过供给丙烯/乙烯混合物进行的，以使乙烯/丙烯反应比为15/85〜79 / 21，由此聚合1至20重量％的总聚合量，第三步聚合通过供应丙烯/乙烯混合物进行，使得乙烯/丙烯反应比为50/50至89/11，从而聚合4〜35重量％的总聚合量，第3步骤中的乙烯/丙烯反应比例大于第2步骤。所述方法可以使丙烯 - 乙烯嵌段共聚物在冲击强度，刚度，透明度和冲击冲刷中显着地平衡。

4. 发明授权

US4337326A Process for producing propylene-ethylene block copolymers 失效
标题翻译：制备丙烯 - 乙烯嵌段共聚物的方法
公开(公告)号：US4337326A
公开(公告)日：1982-06-29
申请号：US194954
申请日：1980-10-08
申请人： Akinobu Shiga , Masahiro Kakugo , Hajime Sadatoshi , Kazuki Wakamatsu , Hiroshi Yoshioka
发明人： Akinobu Shiga , Masahiro Kakugo , Hajime Sadatoshi , Kazuki Wakamatsu , Hiroshi Yoshioka
IPC分类号： C08F2/00 , C08F297/00 , C08F297/08
CPC分类号： C08F297/086
摘要： A process for producing a propylene-ethylene block copolymer by subjecting propylene and ethylene to three-step polymerization using a stereoregular polymerization catalyst, which comprises in the first step polymerizing propylene alone or a propylene/ethylene mixture so that the average ethylene/propylene reaction ratio is 6/94 or less, thereby polymerizing 60 to 95% by weight of the total polymerization amount, in the second step polymerizing a propylene/ethylene mixture so that the average ethylene/propylene reaction ratio is 25/75 to 67/33, thereby polymerizing 1 to 20% by weight of the total polymerization amount, and in the third step polymerizing a propylene/ethylene mixture so that the average ethylene/propylene reaction ratio is 76/24 to 89/11, thereby polymerizing 4 to 35% by weight of the total polymerization amount, wherein in the second and third steps, ethylene alone is supplied thereby gradually decreasing the amount of propylene in the polymerization system from the first step to the succeeding steps.
摘要翻译：丙烯 - 乙烯嵌段共聚物的制备方法是使用立体规则聚合催化剂对丙烯和乙烯进行三步聚合，其中包括在第一步中聚合单独的丙烯或丙烯/乙烯混合物，使得平均乙烯/丙烯反应比为6/94以下，由此聚合60〜95重量％的总聚合量，在丙烯/乙烯混合物的聚合中，平均乙烯/丙烯的反应比为25/75〜67/33，聚合1至20重量％的总聚合量，并且在第三步中聚合丙烯/乙烯混合物使得平均乙烯/丙烯反应比为76/24至89/11，从而聚合4至35重量％的总聚合量，其中在第二和第三步骤中，仅供应乙烯，从而逐渐降低聚合体系中丙烯的量迈向后续步骤。

5. 发明授权

US4259461A Process for producing propylene-ethylene block copolymers 失效
标题翻译：制备丙烯 - 乙烯嵌段共聚物的方法
公开(公告)号：US4259461A
公开(公告)日：1981-03-31
申请号：US041462
申请日：1979-05-22
申请人： Akinobu Shiga , Masahiro Kakugo , Yoshiharu Fukui , Koji Yamada , Hajime Sadatoshi , Kazuki Wakamatsu , Hiroshi Yoshioka
发明人： Akinobu Shiga , Masahiro Kakugo , Yoshiharu Fukui , Koji Yamada , Hajime Sadatoshi , Kazuki Wakamatsu , Hiroshi Yoshioka
IPC分类号： C08F297/08
CPC分类号： C08F297/083
摘要： An improved process for producing propylene-ethylene block copolymer is disclosed utilizing a catalyst system comprising (A) a titanium trichloride solid catalyst obtained by reducing titanium tetrachloride with an organoaluminum compound and activating, (B) an organoaluminum compound, and optionally, (C) an electron donor.
摘要翻译：公开了一种用于生产丙烯 - 乙烯嵌段共聚物的改进方法，该催化剂体系包含（A）通过用有机铝化合物还原四氯化钛并活化（B）有机铝化合物和任选的（C）电子供体。

6. 发明授权

US08716113B2 Crystalline semiconductor film manufacturing method and crystalline semiconductor film manufacturing apparatus 有权
标题翻译：晶体半导体膜制造方法和结晶半导体膜制造装置
公开(公告)号：US08716113B2
公开(公告)日：2014-05-06
申请号：US13295317
申请日：2011-11-14
申请人： Toru Saito , Hiroshi Yoshioka , Sadayoshi Hotta
发明人： Toru Saito , Hiroshi Yoshioka , Sadayoshi Hotta
IPC分类号： H01L21/20 , H01L21/36 , H01L21/02
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.
摘要翻译：半导体膜制造方法包括：在基板上形成金属层; 通过图案化金属层在每个像素中形成栅电极; 在栅电极上形成栅绝缘体; 在栅极绝缘膜上形成非晶半导体膜; 并且通过用激光束照射非晶半导体膜来结晶非晶半导体膜，并且激光束的激光照射宽度对应于每个像素的宽度的n倍（n为2以上的整数），激光能量强度在激光照射宽度的一个端部比在另一端部高，并且在结晶中，激光束的激光能量强度以n个像素为增量反转，交替地在激光照射的一个端部之间激光束的宽度和另一端部。

7. 发明申请

US20140083735A1 ELECTRONIC COMPONENT PACKAGE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PACKAGE MANUFACTURING METHOD 有权
标题翻译：电子元件封装，电子元件和电子元件封装制造方法
公开(公告)号：US20140083735A1
公开(公告)日：2014-03-27
申请号：US13635024
申请日：2012-03-16
申请人： Naoki Kohda , Hiroshi Yoshioka
发明人： Naoki Kohda , Hiroshi Yoshioka
IPC分类号： H05K5/06 , H05K13/00
CPC分类号： H05K5/066 , H01L23/055 , H01L23/10 , H01L2924/0002 , H01L2924/16315 , H03H9/1021 , H03H9/21 , H05K13/00 , H01L2924/00
摘要： An electronic component package has a first sealing member main surface with mounted electronic element, and a second sealing member. An outer circumference portion of a second sealing member is molded into a tapered shape, providing a tapered area in at least part of the outer circumference. A flat area adjacent to the tapered area is provided in at least part of a flat portion inward of the outer circumference portion of the surface of the second sealing member. A first area corresponding to the tapered area and a second area corresponding to the flat area are provided adjacent to each other on a first main surface of the first sealing member with mounted electronic component element. A width W2 of the second area is 0.66 to 1.2 times a width W4 of the flat area. First and second bonding layers are formed and bonded with each other by heating.
摘要翻译：电子部件封装具有安装有电子元件的第一密封构件主表面和第二密封构件。第二密封构件的外周部分模制成锥形，在外周的至少一部分中提供锥形区域。与第二密封构件的表面的外周部的内侧的平坦部的至少一部分设置有与锥形区域相邻的平坦区域。相对于锥形区域的第一区域和对应于平坦区域的第二区域在具有安装的电子元件的第一密封构件的第一主表面上彼此相邻地设置。第二区域的宽度W2为平坦区域的宽度W4的0.66〜1.2倍。通过加热形成第一和第二接合层并彼此接合。

8. 发明授权

US08410569B2 Solid-state imaging device and method for producing the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08410569B2
公开(公告)日：2013-04-02
申请号：US12842583
申请日：2010-07-23
申请人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Mayoshi Aonuma , Hiroshi Yoshioka
发明人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Mayoshi Aonuma , Hiroshi Yoshioka
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要翻译：固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

9. 发明申请

US20110024858A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110024858A1
公开(公告)日：2011-02-03
申请号：US12842583
申请日：2010-07-23
申请人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Masayoshi Aonuma , Hiroshi Yoshioka
发明人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Masayoshi Aonuma , Hiroshi Yoshioka
IPC分类号： H01L31/0232 , H01L31/02 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要翻译：固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

10. 发明授权

US07527442B2 Process for forming resist pattern, and resist coating and developing apparatus 有权
标题翻译：用于形成抗蚀剂图案的方法，以及抗蚀涂层和显影装置
公开(公告)号：US07527442B2
公开(公告)日：2009-05-05
申请号：US11872055
申请日：2007-10-15
申请人： Hiroshi Yoshioka
发明人： Hiroshi Yoshioka
IPC分类号： G03D5/00 , G03C5/00 , H01L21/00
CPC分类号： G03F7/70933 , G03F7/38 , G03F7/40
摘要： A process for forming a resist pattern according to the invention is a process for forming a resist pattern in which a photoresist is coated on a first substrate, the coated photoresist is exposed to light of a predetermined pattern, and afterwards developing is performed, wherein in at least one of the processes of coating, exposing, and developing, whenever lots to which the first substrate belongs change, the atmosphere residing in the lot is changed.
摘要翻译：根据本发明的形成抗蚀剂图案的方法是形成抗蚀剂图案的方法，其中将光致抗蚀剂涂覆在第一基底上，将涂覆的光致抗蚀剂暴露于预定图案的光，然后进行显影涂布，曝光和显影的过程中的至少一个，无论第一底材所属的地点何处，改变了批次中存在的气氛。

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