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1. 发明授权

US08318587B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08318587B2
公开(公告)日：2012-11-27
申请号：US12872213
申请日：2010-08-31
申请人： Akihisa Shimomura , Masaki Koyama , Toru Hasegawa
发明人： Akihisa Shimomura , Masaki Koyama , Toru Hasegawa
IPC分类号： H01L21/46 , H01L21/30 , H01L21/36 , H01L21/763
CPC分类号： H01L21/76254 , H01L21/02686 , H01L21/84
摘要： It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed.
摘要翻译：本发明的目的是提供一种制造SOI衬底的方法，其中抑制杂质扩散到半导体膜中的产率降低。通过热氧化半导体衬底的表面形成设置有氧化膜的半导体衬底。在含有氮原子的气体的气氛下产生等离子体，在部分氧化膜上进行等离子体氮化，得到在氧化物膜上形成有氮原子的绝缘膜的半导体衬底。在将含有氮原子的绝缘膜和玻璃基板彼此接合之后，半导体衬底被分离，由此形成其中包含氮原子的绝缘膜，氧化物膜，薄半导体膜依次层叠的SOI衬底。

2. 发明授权

US09496138B2 Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device 有权
标题翻译：氧化物半导体膜的制造方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US09496138B2
公开(公告)日：2016-11-15
申请号：US13535523
申请日：2012-06-28
申请人： Masaki Koyama , Kosei Nei , Akihisa Shimomura , Suguru Hondo , Toru Hasegawa
发明人： Masaki Koyama , Kosei Nei , Akihisa Shimomura , Suguru Hondo , Toru Hasegawa
IPC分类号： H01L21/36 , H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02631 , H01L21/02686 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/7869
摘要： In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.
摘要翻译：在形成在绝缘表面上的氧化物半导体膜中，非晶区保持在与基极的界面附近，这被认为是导致晶体管等的特性的变化。接触氧化物半导体膜的基底表面或膜由熔点高于用于氧化物半导体膜的材料的熔点形成。因此，与接触氧化物半导体膜的基面或膜的界面附近存在结晶区域。绝缘金属氧化物用于接触氧化物半导体膜的基底表面或膜。这里使用的金属氧化物是与氧化物半导体膜的材料相同的材料的氧化铝，氧化镓等。

3. 发明授权

US07932164B2 Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers 有权
标题翻译：通过使用监视器基板来获得用于单晶半导体层的激光照射的最佳能量密度的半导体衬底的制造方法
公开(公告)号：US07932164B2
公开(公告)日：2011-04-26
申请号：US12402518
申请日：2009-03-12
申请人： Akihisa Shimomura , Masaki Koyama , Motoki Nakashima
发明人： Akihisa Shimomura , Masaki Koyama , Motoki Nakashima
IPC分类号： H01L21/30 , H01L21/301 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.
摘要翻译：提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合，通过热处理将单晶半导体基板沿着脆化层分离，将单晶半导体层固定在基板上基质。接下来，在能量密度不同的条件下，用激光照射监视器基板的多个区域，并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布测光。激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层，由此制造半导体衬底。

4. 发明申请

US20070195837A1 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20070195837A1
公开(公告)日：2007-08-23
申请号：US11730973
申请日：2007-04-05
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
IPC分类号： H01S3/00 , H01S3/22
CPC分类号： B23K26/08 , B23K26/704 , H01S3/005 , H01S3/225 , Y10S117/904
摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.
摘要翻译：本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器，用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束激光束的能量。

5. 发明授权

US07223306B2 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
公开(公告)号：US07223306B2
公开(公告)日：2007-05-29
申请号：US10663671
申请日：2003-09-17
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： B23K26/08 , B23K26/704 , H01S3/005 , H01S3/225 , Y10S117/904
摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

6. 发明授权

US08772128B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772128B2
公开(公告)日：2014-07-08
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
发明人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

7. 发明授权

US07247527B2 Method for manufacturing semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体装置的制造方法以及激光照射装置
公开(公告)号：US07247527B2
公开(公告)日：2007-07-24
申请号：US10900463
申请日：2004-07-28
申请人： Akihisa Shimomura , Masaki Koyama , Hironobu Shoji
发明人： Akihisa Shimomura , Masaki Koyama , Hironobu Shoji
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , C30B13/24 , H01L21/02686 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/78675
摘要： It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the laser once to form a crystalline semiconductor film having a small crystal grain arranged in a grid pattern at a regular interval.In the present invention made in view of the above object, a ridge forms a grid pattern on a surface of the crystalline semiconductor film in such a way that a crystalline semiconductor film is formed by adding the metal element for promoting the crystallization to the amorphous semiconductor film and the pulsed laser whose polarization direction is controlled is irradiated thereto. As the means for controlling the polarization direction, a half-wave plate or a mirror is used.
摘要翻译：本发明的目的是提供一种用于制造结晶半导体膜的方法，包括以下步骤：利用金属元素结晶以促进结晶以控制取向并照射激光一次以形成具有以规则的间隔布置成网格图案的小晶粒。在鉴于上述目的的本发明中，脊在结晶半导体膜的表面上形成栅格图案，使得通过将用于促进结晶的金属元素添加到非晶半导体中而形成结晶半导体膜照射其偏振方向被控制的脉冲激光。作为用于控制偏振方向的装置，使用半波片或反射镜。

8. 发明授权

US08871610B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08871610B2
公开(公告)日：2014-10-28
申请号：US12568768
申请日：2009-09-29
申请人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
发明人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
IPC分类号： H01L21/30 , H01L21/762
CPC分类号： H01L21/76254
摘要： To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.
摘要翻译：为了增加单晶半导体层与基底基板之间的粘合力并减小它们之间的接合缺陷。在半导体衬底的表面进行自由基处理，以在半导体衬底上形成第一绝缘膜; 通过第一绝缘膜照射具有加速离子的半导体衬底，以在半导体衬底中形成脆化区域; 在第一绝缘膜上形成第二绝缘膜; 在接合第二绝缘膜的表面和基底表面之后进行热处理，以沿着脆化区域进行分离，使得在第一和第二绝缘膜之间形成在基底基板上的半导体层; 蚀刻半导体层; 并用激光束照射进行了蚀刻的半导体层。

9. 发明授权

US08314018B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08314018B2
公开(公告)日：2012-11-20
申请号：US12901005
申请日：2010-10-08
申请人： Akihisa Shimomura , Naoki Okuno , Masaki Koyama , Yasuhiro Jinbo
发明人： Akihisa Shimomura , Naoki Okuno , Masaki Koyama , Yasuhiro Jinbo
IPC分类号： H01L21/425 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1229 , H01L27/1251 , H01L27/1262 , H01L27/1266 , H01L29/66772
摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
摘要翻译：通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

10. 发明授权

US07881350B2 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US07881350B2
公开(公告)日：2011-02-01
申请号：US11730973
申请日：2007-04-05
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
IPC分类号： H01S3/10
CPC分类号： B23K26/08 , B23K26/704 , H01S3/005 , H01S3/225 , Y10S117/904
摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.
摘要翻译：本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器，用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束激光束的能量。

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