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1. 发明授权

US08981379B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08981379B2
公开(公告)日：2015-03-17
申请号：US13239853
申请日：2011-09-22
申请人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
发明人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
IPC分类号： H01L29/04 , H01L21/20 , H01L27/12 , H01L29/786
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来，用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

2. 发明申请

US20080020555A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080020555A1
公开(公告)日：2008-01-24
申请号：US11826228
申请日：2007-07-13
申请人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
发明人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10 -7 /℃至38×10 -7 /℃，优选6×10 -7 / ℃至31.8×10 -7 /℃。接下来，用激光束照射包含半导体膜的层，以使半导体膜结晶，从而形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

3. 发明授权

US08034724B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08034724B2
公开(公告)日：2011-10-11
申请号：US11826228
申请日：2007-07-13
申请人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
发明人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
IPC分类号： H01L21/31
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来，用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

4. 发明授权

US07767547B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07767547B2
公开(公告)日：2010-08-03
申请号：US12360419
申请日：2009-01-27
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

5. 发明申请

US20090117716A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：制造半导体器件的方法和半导体器件和电子器件
公开(公告)号：US20090117716A1
公开(公告)日：2009-05-07
申请号：US12259241
申请日：2008-10-27
申请人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
发明人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
IPC分类号： H01L21/62
CPC分类号： H01L21/76254
摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.
摘要翻译：为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。因此，可以提供高性能半导体器件而不进行机械抛光。此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。因此，可以大大提高半导体器件的性能。此外，可以提供优良的电子装置。

6. 发明申请

US20090046757A1 Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device 审中-公开
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20090046757A1
公开(公告)日：2009-02-19
申请号：US12222258
申请日：2008-08-06
申请人： Hidekazu Miyairi , Junpei Momo , Fumito Isaka
发明人： Hidekazu Miyairi , Junpei Momo , Fumito Isaka
IPC分类号： H01S3/108 , G21G5/00
CPC分类号： G03F7/70383 , H01L21/02672 , H01L21/02678
摘要： An object is to provide a laser irradiation apparatus and a laser irradiation method with which positions of crystal grain boundaries generated at the time of laser crystallization can be controlled. Laser light emitted from a laser 101 is modulated into laser light having intensity distribution along a long-axis direction through a phase shift mask 103 and is transferred to an amorphous semiconductor film provided over an insulating substrate by a cylindrical lens 104 and a lens 105. The amorphous semiconductor film is crystallized by being scanned with the laser light.
摘要翻译：目的在于提供一种能够控制激光结晶时产生的晶界的位置的激光照射装置和激光照射方法。从激光器101发射的激光通过相移掩模103被调制成具有沿长轴方向的强度分布的激光，并且通过柱面透镜104和透镜105被转印到设置在绝缘基板上的非晶半导体膜。通过用激光扫描使非晶半导体膜结晶化。

7. 发明授权

US08772128B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772128B2
公开(公告)日：2014-07-08
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
发明人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

8. 发明授权

US08043935B2 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device 有权
标题翻译：半导体基板的制造方法及半导体装置的制造方法
公开(公告)号：US08043935B2
公开(公告)日：2011-10-25
申请号：US12621541
申请日：2009-11-19
申请人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

9. 发明授权

US07939426B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07939426B2
公开(公告)日：2011-05-10
申请号：US12844856
申请日：2010-07-28
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

10. 发明授权

US07842584B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07842584B2
公开(公告)日：2010-11-30
申请号：US12339413
申请日：2008-12-19
申请人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
发明人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
IPC分类号： H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

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